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Your search keyword '"Du, Cheng‐Zhuo"' showing total 9 results
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9 results on '"Du, Cheng‐Zhuo"'

2. Growth optimization and device integration of narrow-bandgap graphene nanoribbons

Author

Barin, Gabriela Borin, Sun, Qiang, Di Giovannantonio, Marco, Du, Cheng-Zhuo, Wang, Xiao-Ye, Llinas, Juan Pablo, Mutlu, Zafer, Lin, Yuxuan, Wilhelm, Jan, Overbeck, Jan, Daniels, Colin, Lamparski, Michael, Sahabudeen, Hafeesudeen, Perrin, Mickael L., Urgel, José I., Mishra, Shantanu, Kinikar, Amogh, Widmer, Roland, Stolz, Samuel, Bommert, Max, Pignedoli, Carlo, Feng, Xinliang, Calame, Michel, Müllen, Klaus, Narita, Akimitsu, Meunier, Vincent, Bokor, Jeffrey, Fasel, Roman, and Ruffieux, Pascal

Subjects
Condensed Matter - Materials Science
Abstract

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

Published
2022
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6. Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons (Small 31/2022)

Author

Borin Barin, Gabriela, primary, Sun, Qiang, additional, Di Giovannantonio, Marco, additional, Du, Cheng‐Zhuo, additional, Wang, Xiao‐Ye, additional, Llinas, Juan Pablo, additional, Mutlu, Zafer, additional, Lin, Yuxuan, additional, Wilhelm, Jan, additional, Overbeck, Jan, additional, Daniels, Colin, additional, Lamparski, Michael, additional, Sahabudeen, Hafeesudeen, additional, Perrin, Mickael L., additional, Urgel, José I., additional, Mishra, Shantanu, additional, Kinikar, Amogh, additional, Widmer, Roland, additional, Stolz, Samuel, additional, Bommert, Max, additional, Pignedoli, Carlo, additional, Feng, Xinliang, additional, Calame, Michel, additional, Müllen, Klaus, additional, Narita, Akimitsu, additional, Meunier, Vincent, additional, Bokor, Jeffrey, additional, Fasel, Roman, additional, and Ruffieux, Pascal, additional

Published
2022
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9. BN-Anthracene for High-Mobility Organic Optoelectronic Materials through Periphery Engineering.

Author

Li W, Du CZ, Chen XY, Fu L, Gao RR, Yao ZF, Wang JY, Hu W, Pei J, and Wang XY

Abstract

Despite the remarkable synthetic accomplishments in creating diverse polycyclic aromatic hydrocarbons with B-N bonds (BN-PAHs), their optoelectronic applications have been less exploited. Herein, we report the achievement of high-mobility organic semiconductors based on existing BN-PAHs through a "periphery engineering" strategy. Tetraphenyl- and diphenyl-substituted BN-anthracenes (TPBNA and DPBNA, respectively) are designed and synthesized. DPBNA exhibits the highest hole mobility of 1.3 cm 2  V -1  s -1 in organic field-effect transistors, significantly outperforming TPBNA and all the reported BN-PAHs. Remarkably, this is the first BN-PAH with mobility over 1 cm 2  V -1  s -1 , which is a benchmark value for practical applications as compared with amorphous silicon. Furthermore, high-performance phototransistors based on DPBNA are also demonstrated, implying the high potential of BN-PAHs for optoelectronic applications when the "periphery engineering" strategy is implemented., (© 2022 Wiley-VCH GmbH.)

Published
2022
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