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The negatively charged boron vacancy ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation, well-characterized atomic structure, and optical polarizability at room temperature. We investigate the latter through extensive measurements probing both the ground and excited state polarization dynamics. We develop a semiclassical model based on these measurements that predicts a near-unity degree of spin polarization, surpassing other solid-state spin defects under ambient conditions. Building upon our model, we include the presence of nuclear spin degrees of freedom adjacent to the $\mathrm{V}_{\mathrm{B}}^-$ and perform a comprehensive set of Lindbladian numerics to investigate the hyperfine-induced polarization of the nuclear spins. Our simulations predict a number of important features that emerge as a function of magnetic field which are borne out by experiment.

Many factors in perovskite X-ray detectors, such as crystal lattice and carrier dynamics, determine the final device performance (e.g., sensitivity and detection limit). However, the relationship between these factors remains unknown due to the complexity of the material. In this study, we employ machine learning to reveal the relationship between 15 intrinsic properties of halide perovskite materials and their device performance. We construct a database of X-ray detectors for the training of machine learning. The results show that the band gap is mainly influenced by the atomic number of the B-site metal, and the lattice length parameter b has the greatest impact on the carrier mobility-lifetime product ({\mu}{\tau}). An X-ray detector (m-F-PEA)2PbI4 were generated in the experiment and it further verified the accuracy of our ML models. We suggest further study on random forest regression for X-ray detector applications., Comment: 20 pages

The negatively charged boron-vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has recently emerged as a highly promising quantum sensor. Compared to the nitrogen-vacancy (NV) center in diamond, the change with temperature of the spin transition energy of $\mathrm{V}_{\mathrm{B}}^-$ is more than an order of magnitude larger, making it a potential nanoscale thermometer with superior sensitivity. However, the underlying mechanism of the observed large temperature dependence remains an open question. In this work, using isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$, we systematically characterize the zero-field splitting, hyperfine interaction, and spin relaxation time of $\mathrm{V}_{\mathrm{B}}^-$ from 10 to 350$~$K. We carry out first-principle calculations of the $\mathrm{V}_{\mathrm{B}}^-$ spin-phonon interaction and show that a second-order effect from finite-temperature phonon excitations is responsible for the observed changes in experiments. By fitting our experimental results to a physically motivated model, we extract the dominant phonon mode which agrees well with our simulations. Finally, we investigate the dynamic nuclear spin polarization process at cryogenic temperatures. Our results provide key insights in $\mathrm{V}_{\mathrm{B}}^-$ centers and their utilization as nanoscale thermometers and phonon sensors., Comment: 7 pages, 4 figures and 1 table in main. 9 pages and 5 figures in supplementary

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials., Comment: 8+5+12 pages, 4+5+8 figures