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28 results on '"Duan, Ningyuan"'

8. An adaptive feedforward method in active vibration control for the propulsion shafting system.

Author

Duan, Ningyuan, Ni, Zhen, Zhang, Zhenguo, and Hua, Hongxing

Subjects
*ACTIVE noise & vibration control, *PROPULSION systems, *ELECTRIC propulsion, *ADAPTIVE control systems, *SMART structures
Abstract

This paper proposes a new adaptive feedforward control method for the rejection of multiple periodic disturbances in the propulsion shafting system. The active vibration control scheme of the propulsion shafting system is established by employing the equivalent-input-disturbance principle which reduces the complexity of the control system in applications. The adaptive control algorithm is designed by taking the scale transformation procedure and the frequency-tracking technique into consideration. The scale transformation normalizes the iso-surface of the optimization function by the frequency response characteristics of the control channel, which immensely improves the convergence rate of the control algorithm for multi-harmonic disturbance. Moreover, the adaptive controller tracks the fluctuating frequencies in a direct method, enhancing the efficiency and robustness of the algorithm for eliminating time-varying disturbances. Finally, numerical simulation and experimental validation are carried out to show that the proposed method has good performance on the application of the active vibration control of the propulsion shafting system. [ABSTRACT FROM AUTHOR]

Published
2023
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13. Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

Author

Mao, Shujuan, primary, Wang, Guilei, additional, Xu, Jing, additional, Luo, Xue, additional, Zhang, Dan, additional, Duan, Ningyuan, additional, Liu, Shi, additional, Wang, Wenwu, additional, Chen, Dapeng, additional, Li, Junfeng, additional, Zhao, Chao, additional, Ye, Tianchun, additional, and Luo, Jun, additional

Published
2018
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16. On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSix and the specific contact resistivity in TiSix/n-Si contacts for sub-16/14 nm nodes and beyond

Author

Luo, Jun, primary, Mao, Shujuan, additional, Xu, Jing, additional, Wang, Guilei, additional, Zhang, Dan, additional, Luo, Xue, additional, Duan, Ningyuan, additional, Liu, Shi, additional, Wang, Wenwu, additional, Chen, Dapeng, additional, Li, Junfeng, additional, Zhao, Chao, additional, and Ye, Tianchun, additional

Published
2018
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18. Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Author

Duan, Ningyuan, primary, Luo, Jun, additional, Wang, Guilei, additional, Liu, Jinbiao, additional, Simoen, Eddy, additional, Mao, Shujuan, additional, Radamson, Henry, additional, Wang, Xiaolei, additional, Li, Junfeng, additional, Wang, Wenwu, additional, Zhao, Chao, additional, and Ye, Tianchun, additional

Published
2016
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19. Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Author

Duan, Ningyuan, Luo, Jun, Wang, Guilei, Liu, Jinbiao, Simoen, Eddy, Mao, Shujuan, Radamson, Henry, Wang, Xiaolei, Li, Junfeng, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Duan, Ningyuan, Luo, Jun, Wang, Guilei, Liu, Jinbiao, Simoen, Eddy, Mao, Shujuan, Radamson, Henry, Wang, Xiaolei, Li, Junfeng, Wang, Wenwu, Zhao, Chao, and Ye, Tianchun

Abstract

This brief explores the specific contact resistivity (rho(c)) of NiGe/n- and p-Ge contacts with and without carbon pregermanidation implantation. It is found that in the presence of carbon, not only the thermal stability of NiGe films is improved, but also the rho(c) of the NiGe/n- and p-Ge contacts is reduced remarkably due to enhanced phosphorus (P) and boron (B) dopant segregation (DS) at the NiGe/Ge interface after nickel germanidation. At 500 degrees C germanidation temperature, the.c values are reduced from 1.1 x 10(-4) Omega-cm(2) and 2.9 x 10(-5) Omega-cm(2) for NiGe/n- and p-Ge contacts without carbon to 7.3 x 10(-5) Omega-cm(2) and 1.4 x 10(-5) Omega-cm(2) for their counterparts with carbon, respectively., QC 20170116

Published
2016
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20. Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

Author

Wang, Guilei, primary, Qin, Changliang, additional, Yin, Huaxiang, additional, Luo, Jun, additional, Duan, Ningyuan, additional, Yang, Ping, additional, Gao, Xingyu, additional, Yang, Tao, additional, Li, Junfeng, additional, Yan, Jiang, additional, Zhu, Huilong, additional, Wang, Wenwu, additional, Chen, Dapeng, additional, Ye, Tianchun, additional, Zhao, Chao, additional, and Radamson, Henry H., additional

Published
2016
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21. (Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping

Author

Luo, Jun, primary, Liu, Jinbiao, additional, Simoen, Eddy, additional, Wang, Guilei, additional, Mao, Shujuan, additional, Radamson, Henry H, additional, Duan, Ningyuan, additional, Li, Junfeng, additional, Wang, Wenwu, additional, Chen, Dapeng, additional, Zhao, Chao, additional, and Ye, Tianchun, additional

Published
2016
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22. Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

Author

Liu, Qingbo, Wang, Guilei, Duan, Ningyuan, Radamson, Henry, Liu, Hong, Zhao, Chao, Luo, Jun, Liu, Qingbo, Wang, Guilei, Duan, Ningyuan, Radamson, Henry, Liu, Hong, Zhao, Chao, and Luo, Jun

Abstract

In this work, the effects of carbon pre-geramanidation implantation on the thermal stability of NiGe and dopant segregation on both ntype and p-type Ge substrate were investigated systematically. As-prepared NiGe films with carbon pre-germanidation implantation to different doses were characterized by means of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscope (X-TEM) and secondary ion mass spectroscopy (SIMS). The presence of carbon is proved to improve the thermal stability of NiGe formed on both n-and p-type Ge significantly, as well as to lead to dopant segregation (DS) of P and B at the NiGe/Ge interface. The homogeneous distribution of C within NiGe films and stuffing of C atoms at the NiGe/Ge interface is responsible for the enhanced thermal stability of NiGe and DS of P and B during germanidation process. (C) The Author(s) 2015. Published by ECS. All rights reserved., QC 20150512

Published
2015
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23. Impact of Ge pre-amorphization implantation on forming ultrathin TiGex on both n- and p-Ge substrate.

Author

Luo, Xue, Wang, Guilei, Xu, Jing, Duan, Ningyuan, Mao, Shujuan, Liu, Shi, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Zhao, Chao, Ye, Tianchun, and Luo, Jun

Abstract

In this work, the effects of Ge pre-amorphization implantation (PAI) on forming ultrathin TiGex films at 350–600 °C are explored. It is found that the Ge PAI indeed enhances the formation of TiGex at relatively low temperature, as confirmed by the lower sheet resistance and thicker TiGex films compared to the case without Ge PAI. The energy dispersive X-ray spectroscopy (EDX) reveals that the composition of as-formed TiGex across its thickness is rather graded than constant. Characterizations using advanced autocorrelation function (ACF) in transmission electron microscopy (TEM) demonstrate that numerous Ti6Ge5 and Ti5Ge3 nanocrystals are embedded in as-formed amorphous TiGex film. [ABSTRACT FROM AUTHOR]

Published
2018
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