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Based on ab initio calculations, we demonstrate that a Mott insulator LaTiO$_3$ (LTO), not inspected previously as an altermagnetic material, shows the characteristic features of altermagnets, i.e., (i) fully compensated antiferromagnetism and (ii) $\mathbf{k}$-dependent spin-split electron bands in the absence of spin-orbit coupling. The altermagnetic ground state of LTO is protected by the crystal symmetry and specifically ordered $d$-orbitals of Ti ions with the orbital momentum $l=2.$ The altermagnetism occurs when sites of Ti pair in the unit cell are occupied by single electrons with $m=-1,s_{z}=+1/2$ and $m=+1,s_{z}=-1/2$ per site, with $m$ and $s_{z}-$ being the $z-$ component of the orbital momentum and spin, respectively. By further simulating orbital disorder within the Green's function method, we disclose its damaging character on the spin splitting and the resulting altermagnetism. When the single-electron spin-polarized state at each Ti site is contributed almost equally by two or three $t_{2g}$ orbitals, LTO becomes antiferromagnetic. The effect of the spin-orbit coupling, which can cause orbital disorder and suppress altermagnetism, is discussed., Comment: 6 pages, 7 figures

Altermagnetism became very popular because of unique features, namely coupling between magnetic properties and momentum of itinerant electrons. The particular model of the altermagnetic system of our interest has already been studied in recent publications in a different context: Phys. Rev. B \textbf{108}, L140408 (2023). Here, we study the scattering process of an itinerant electron from the altermagnetic system on the electron localized in a quantum dot. We found a spatially inhomogeneous distribution of quantum entanglement in the post-scattering state. An interesting observation is the controlled rotation of entanglement achieved by means of spin-orbital coupling constant in altermagnetic. We also studied Reny entropy and the effect of disorder in the system leading to randomness in the spin-orbit constant. Our main finding is that due to the unique properties of an altermagnetic system, tuning the applied external magnetic field allows tailoring of the desired entangled state. Thus, the scattering process, in essence, mimics the Hadamard-CNOT Gate transformation, converting the initial disentangled state into the entangled state of Bell's state. In particular, we achieved more than 70 percent fidelity between the post-scattering and Bell's states., Comment: arXiv admin note: text overlap with arXiv:2212.11026

We consider longitudinal electronic transport in a graphene monolayer with an external in-plane magnetic field and with extrinsic spin-orbit Rashba interaction. Our main interest is in the in-plane magnetoresistance, observed experimentally. We show, that scattering on Rashba spin-orbit fluctuations leads to a negative magnetoresistance, in agreement with experimental observations. To calculate transport properties we assume an effective model valid for low energy states around the Dirac points, and use the Green function method to derive the electron scattering rate and longitudinal conductivity., Comment: 10 pages, 7 figures

Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wide band insulators. Here the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO$_{3}$ and LaTiO$_{3}$ which, due to a small gap in the LaTiO$_{3}$ results in its sensitivity to the crystal structure, yields metalization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO$_{3}$/KTaO$_{3}$~(110) where the ''polar`` arguments are not applicable and on the emergence of superconductivity in these structures.

Measurements done on the quantum systems are too specific. Contrary to their classical counterparts, quantum measurements can be invasive and destroy the state of interest. Besides, quantumness limits the accuracy of measurements done on quantum systems. Uncertainty relations define the universal accuracy limit of the quantum measurements. Relatively recently, it was discovered that quantum correlations and quantum memory might reduce the uncertainty of quantum measurements. In the present work, we study two different types of measurements done on the topological system. Namely, we discuss measurements done on the spin operators and the canonical pair of operators: momentum and coordinate. We quantify the spin operator's measurements through the entropic measures of uncertainty and exploit the concept of quantum memory. While for the momentum and coordinate operators, we exploit the improved uncertainty relations. We discovered that quantum memory reduces the uncertainties of spin measurements. On the hand, we proved that the uncertainties in the measurements of the coordinate and momentum operators depend on the value of the momentum and are substantially enhanced at small distances between itinerant and localized electrons (the large momentum limit). We note that the topological nature of the system leads to the spin-momentum locking. The momentum of the electron depends on the spin and vice versa. Therefore, we suggest the indirect measurement scheme for the momentum and coordinate operators through the spin operator. Due to the factor of quantum memory, such indirect measurements in topological insulators have smaller uncertainties rather than direct measurements.

We study the superconducting Josephson junction diode operating via the magnetic field of skyrmions. Inspired by the near-field optical microscopy, we propose to partially screen the magnetic field and analyze part-by-part the magnetic texture of the skyrmion. The detected asymmetric supercurrent is influenced by the skyrmionic magnetic field and magnetic texture. This enables the Josephson junction diode to function as a hyperfine sensor and to read out the information about the morphology of the complex magnetic textures. The proposed setup opens a new avenue in magnetometry and represents an alternative to the technologies based on the nitrogen-vacancy centers.

Simultaneous manipulation of charge and spin density distributions in materials is the key element required in spintronics applications. Here we study the formation of coupled spin and charge densities arising in scattering of electrons by domains of local magnetization producing a position-dependent Zeeman field in the presence of the spin-momentum locking typical for topological insulators. Analytically and numerically calculated scattering pattern is determined by the electron energy, domain magnetization, and size. The spin-momentum locking produces strong differences with respect to the spin-diagonal scattering and leads to the scattering asymmetry with nonzero mean scattering angle as determined by only two parameters characterizing the system. To extend the variety of possible patterns, we study scattering by diffraction gratings and propose to design them in modern nanostructures based on topological insulators to produce desired distributions of the charge and spin densities. These results can be useful for engineering of magnetic patterns for electron optics to control coupled charge and spin evolution., Comment: 9 page, 5 figures

Design of epitaxial interfaces is a pivotal way to engineer artificial structures where new electronic phases can emerge. Here we report a systematic emergence of interfacial superconducting state in epitaxial heterostructures of LaTiO3 and KTaO3. The superconductivity transition temperature increases with decreasing the thickness of LaTiO3. Such behavior is observed for both (110) and (111) crystal oriented structures. For thick samples, the finite resistance developing below the superconducting transition temperature increases with increasing LaTiO3 thickness. Consistent with previous reports, the (001) oriented heterointerface features high electron mobility of 250 cm2/Vs and shows no superconducting transition down to 40 mK. Our results imply a non-trivial impact of LaTiO3 on the superconducting state and indicate how superconducting KTaO3 interfaces can be integrated with other oxide materials., Comment: accepted in APL Materials

Vortex magnetic structure in artificial honeycomb lattice provides a unique platform to explore emergent properties due to the additional Berry phase curvature imparted by chiral magnetization to circulating electrons via direct interaction. We argue that while the perpendicularly-aligned magnetic component leads to the quantized flux of monopole at the center of the Berry sphere, the in-plane vortex circulation of magnetization gives rise to unexpected non-trivial topological Berry phase due to the gauge field transformation. The unprecedented effect signifies the importance of vector potential in multiply-connected geometrical systems. Experimental confirmations to proposed hypotheses are obtained from Hall resistance measurements on permalloy honeycomb lattice. Investigation of the topological gauge transformation due to the in-plane chirality reveals anomalous quasi-oscillatory behavior in Hall resistance $R_{xy}$ as function of perpendicular field. The oscillatory nature of $R_{xy}$ is owed to the fluctuation in equilibrium current as a function of Fermi wave-vector $k_F$, envisaged under the proposed new formulation in this article. Our synergistic approach suggests that artificially tunable nanostructured material provides new vista to the exploration of topological phenomena of strong fundamental importance.

Envisaging antiferromagnetic spintronics pivots on two key criteria of high transition temperature and tuning of underlying magnetic order using straightforward application of magnetic field or electric current. Here, we show that NiSi metal can provide suitable new platform in this quest. First, our study unveils high temperature antiferromagnetism in single crystal NiSi with $T_{N} \geq 700$ K. Antiferromagnetic order in NiSi is accompanied by the non-centrosymmetric magnetic character with small ferromagnetic component in a-c plane. Second, we find that NiSi manifests distinct magnetic and electronic hysteresis responses to field applications due to the disparity in two moment directions. While magnetic hysteresis is characterized by one-step switching between ferromagnetic states of uncompensated moment, electronic behavior is ascribed to metamagnetic switching phenomena between non-collinear spin configurations. Importantly, the switching behaviors persist to high temperature. The properties underscore the importance of NiSi in the pursuit of antiferromagnetic spintronics., Comment: 8 pages, 6 figures

Tools for controlling electrically the motion of magnetic skyrmions are important elements towards their use in spintronic devices. Here, we propose and demonstrate the transport of skyrmions via GHz and THz electric pulses. The method relies on using polarization textured pulses such that the skyrmion experiences (via its inherent magnetoelectricity) the out-of-plane and in-plane components of the pulse electric field. It is shown how the electric field drags efficiently the skyrmion. The control of the skyrmion motion depends solely on the amplitude of electric fields, frequency, polarization, or phase in case two pulses are applied. Micromagnetic calculations supported by analytic modeling and analysis indicate the experimental feasibility of the control scheme., Comment: 5 pages, 5 figures

The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged R\'enyi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder., Comment: 12 pages, 8 figures

We consider helical rotation of skyrmions confined in the potentials formed by nano-disks. Based on numerical and analytical calculations we propose the skyrmion echo phenomenon. The physical mechanism of the skyrmion echo formation is also proposed. Due to the distortion of the lattice, impurities, or pinning effect, confined skyrmions experience slightly different local fields, which leads to dephasing of the initial signal. The interaction between skyrmions also can contribute to the dephasing process. However, switching the magnetization direction in the nanodiscs (e.g. by spin transfer torque) also switches the helical rotation of the skyrmions from clockwise to anticlockwise (or vice-versa), and this restores the initial signal (which is the essence of skyrmion echo)., Comment: 9 pages, 11 figures, accepted in Phys. Rev. Lett

Thin ferromagnetic films can possess unconventional magnetic properties, opening a new road for using them in spintronic technologies. In the present work exploiting three different methods, we comprehensively analyze phason excitations of a skyrmion lattice in synthetic antiferromagnets. To analyze phason excitations of the skyrmion lattice, we have constructed an analytical model based on three coupled helices and found a linear gapless mode. Micromagnetic simulations also support this result. Moreover, a similar result has been achieved within the rigid skyrmion lattice model based on the coupled Thiele's equations, when the coupling between skyrmions in different layers of the synthetic antiferromagnetic is comparable to or larger than the intralayer coupling. In addition, we also consider the orbital angular momentum and spin pumping current associated with phason excitations. Due to the gapless excitations in the case of skyrmion lattice, the pumping current is nonzero for the arbitrary frequency of pumping microwaves. In the case of individual skyrmions, no current is pumped when microwave frequency is inside the gap of the spectrum of individual skyrmions., Comment: 12 pages, 8 figures, accepted in Phys. Rev. B

In the absence of an external magnetic field and a spin-polarized charge current, an antiferromagnetic system supports two degenerate magnon modes. An applied thermal bias activates the magnetic dynamics, leading to a magnon flow from the hot to the cold edge (magnonic spin Seebeck current). Both degenerate bands contribute to the magnon current but the orientations of the magnetic moments underlying the magnons are opposite in different bands. Therefore, while the magnon current is nonzero, the net spin current is zero., Comment: Phys. Rev. B 106, 014417 (2022)

Electron states localized at a magnetic domain wall in a graphene caplayer with Rashba spin-orbit interaction and coupled to a magnetic overlayer are studied theoretically. It is shown that two one-dimensional bands of edge modes propagating along the domain wall emerge in the energy gap for each Dirac point, and the modes associated with different Dirac points K and K' are the same. The coefficients describing decay of the corresponding wavefunctions with distance from the domain wall contain generally real and imaginary terms. Numerical results on the local spin density and on the total spin expected in the edge states characterized by the wavenumber $k_y$ are presented and discussed. The Chern number for a single magnetic domain on graphene indicates that the system is in the quantum anomalous Hall phase, with two chiral modes at the edges. In turn, the number of modes localized at the domain wall is determined by the difference in Chern numbers on both sides of the wall. These numbers are equal to 2 and -2, respectively, so there are four modes localized at the domain wall.

Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density., Comment: Main Text (4 Figures), Supplementary notes (4 Figures)

The magnonic spin Seebeck effect is a key element of spin caloritronic, a field that exploits thermal effects for spintronic applications. Early studies were focused on investigating the steady-state nonequilibrium magnonic spin Seebeck current, and the underlying physics of the magnonic spin Seebeck effect is now relatively well established. However, the initial steps of the formation of the spin Seebeck current are in the scope of recent interest. To address this dynamical aspect theoretically we propose here a new approach to the time-resolved spin Seebeck effect. Our method exploits the supersymmetric theory of stochastics and Ito - Stratonovich integration scheme. We found that in the early step the spin Seebeck current has both nonzero transversal and longitudinal components. As the magnetization dynamics approaches the steady-state, the transversal components decay through dephasing over the dipole-dipole reservoir. The time scale for this process is typically in the sub-nanoseconds pointing thus to the potential of an ultrafast control of the dynamical spin Seebeck during its buildup., Comment: to appear in Phys. Rev. B

Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis.

In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall., Comment: 6 pages, 4 figures

Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction., Comment: 6 pages, 2 figures

We study the spin transport theoretically in heterostructures consisting of a ferromagnetic metallic thin film sandwiched between heavy-metal and oxide layers. The spin current in the heavy metal layer is generated via the spin Hall effect, while the oxide layer induces at the interface with the ferromagnetic layer a spin-orbital coupling of the Rashba type. Impact of the spin Hall effect and Rashba spin-orbit coupling on the spin Seebeck current is explored with a particular emphasis on nonlinear effects. Technically, we employ the Fokker-Planck approach and contrast the analytical expressions with full numerical micromagnetic simulations. We show that when an external magnetic field is aligned parallel (antiparallel) to the Rashba field, the spin-orbit coupling enhances (reduces) the spin pumping current. In turn, the spin Hall effect and the Dzyaloshinskii-Moriya interaction are shown to increase the spin pumping current., Comment: to appear in Phys. Rev. B

The quantum spin continuum and classical spin freezing, associated with a glassy state, represent two opposite extremes of a correlated electronic material. Here, we report the coexistence of a quantum spin continuum with a weak spin glass order in Co-doped CaRuO$_{3}$ perovskite near the chemical doping dependent metal-insulator transition boundary. Inelastic neutron measurements on Ca(Co$_{0.15}$Ru$_{0.85}$)O$_{3}$ at low temperature, $T$ = 1.5 K, reveal a continuum spectrum in the $Q-E$ space due to uncorrelated spin fluctuations. This persists across the glass transition at $T_G \simeq$23 K. Furthermore, scaling of the dynamic susceptibility yields a very small scaling coefficient $\alpha$ $\simeq$ 0.1, suggesting extreme locality of the dynamic properties. The experimental results indicate the realization of a narrow regime where the distinction between continuum dynamic behavior and glass-like regimes is reduced., Comment: 6 pages, 4 figures

We calculate the transport relaxation time $\tau _{\rm tr}$ and spin transport relaxation time $\tau _{s,{\rm tr}}$ for a two-dimensional electron gas with spatially fluctuating Rashba spin-orbit interaction. These relaxation times determine the electrical and spin conductivity of the two-dimensional system, respectively. It is shown that the transport relaxation time $\tau _{\rm tr}$ is a nonmonotonic function of electron energy $\varepsilon $, whereas the spin transport relaxation time $\tau _{s,{\rm tr}}$ decreases with increasing $\varepsilon $, similarly to the conventional electron relaxation time $\tau$ that characterizes the decay of an electron state corresponding to certain values of the momentum and spin. Such a behavior of the relaxation times leads to unusual temperature dependence of the electrical and spin conductivity., Comment: 7 pages, 4 figures

Quantum magnetic properties in a geometrically frustrated lattice of spin-1/2 magnet, such as quantum spin liquid or solid and the associated spin fractionalization, are considered key in developing a new phase of matter. The feasibility of observing the quantum magnetic properties, usually found in geometrically frustrated lattice of spin-1/2 magnet, in a perovskite material with controlled disorder is demonstrated. It is found that the controlled chemical disorder, due to the chemical substitution of Ru ions by Co-ions, in a simple perovskite CaRuO3 creates a random prototype configuration of artificial spin-1/2 that forms dimer pairs between the nearest and further away ions. The localization of the Co impurity in the Ru matrix is analyzed using the Anderson localization formulation. The dimers of artificial spin-1/2, due to the localization of Co impurities, exhibit singlet-to-triplet excitation at low temperature without any ordered spin correlation. The localized gapped excitation evolves into a gapless quasi-continuum as dimer pairs break and create freely fluctuating fractionalized spins at high temperature. Together, these properties hint at a new quantum magnetic state with strong resemblance to the resonance valence bond system., Comment: 8 pages, 6 figures

Spin polarization induced by a temperature gradient (heat-current) in a magnetized two-dimensional electron gas (2DEG) with Rashba spin-orbit interaction is considered theoretically within the linear response theory. Using the Matsubara Green function formalism we calculate the temperature dependence of the spin polarization for arbitrary orientation of the exchange field. The limit of a nonmagnetic 2DEG (zero exchange field) is also considered. The physical mechanisms of the spin polarization within our scheme are discussed., Comment: 9 pages, 3 figures

Current-induced spin polarization in a two-dimensional electron gas with Rashba spin-orbit interaction is considered theoretically in terms of the Matsubara Green functions. This formalism allows to describe temperature dependence of the induced spin polarization. The electron gas is assumed to be coupled to a magnetic substrate via exchange interaction. Analytical and numerical results on the temperature dependence of spin polarization have been obtained in the linear response regime. The spin polarization has been presented as a sum of two terms - one proportional to the relaxation time and the other related to the Berry phase corresponding to the electronic bands of the magnetized Rashba gas. The spin-orbit torque due to Rashba interaction is also discussed. Such a torque appears as a result of the exchange coupling between the non-equilibrium spin polarization and magnetic moment of the underlayer., Comment: 13 pages, 6 figures

We discuss the effect of a magnetic thin-film ribbon at the surface of a topological insulator on the charge and spin transport due to surface electrons.\\ If the magnetization in the magnetic ribbon is perpendicular to the surface of a topological insulator, it leads to a gap in the energy spectrum of surface electrons. As a result, the ribbon is a barrier for electrons, which leads to electrical resistance.\\ We have calculated conductance of such a structure. The conductance reveal some oscillations with the length of the magnetized region due to the interference of transmitted and reflected waves. We have also calculated the Seebeck coefficient when electron flux is due to a temperature gradient., Comment: 7 pages, 7 figure

We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin-dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to the super-Poissonian statistics, and also depend on relative orientation of the electrodes' magnetic moments. We have also calculated the corresponding spin shot noise, which is associated with fluctuations of spin current.

A key feature of topological insulators is the robustness of the electron energy spectrum. At a surface of a topological insulator, Dirac point is protected by the characteristic symmetry of the system. The breaking of the symmetry opens a gap in the energy spectrum. Therefore, topological insulators are very sensitive to magnetic fields, which can open a gap in the electronic spectrum. Concerning "internal" magnetic effects, for example the situation with doped magnetic impurities, is not trivial. A single magnetic impurity is not enough to open the band gap, while in the case of a ferromagnetic chain of deposited magnetic impurities the Dirac point is lifted. However, a much more interesting case is when localized magnetic impurities form a chiral spin order. Our first principle density functional theory calculations have shown that this is the case for Fe deposited on the surface of Bi2Se3 topological insulator. But not only magnetic impurities can form a chiral helicoidal spin texture. An alternative way is to use chiral multiferroics (prototype material is LiCu2O2) that induce a proximity effect. The theoretical approach we present here is valid for both cases. We observed that opposite to a ferromagnetically ordered case, a chiral spin order does not destroy the Dirac point. We also observed that the energy gap appears at the edges of the new Brillouin zone. Another interesting result concerns the spin dynamics. We derived an equation for the spin density dynamics with a spin current and relaxation terms. We have shown that the motion of the conductance electron generates a magnetic torque and exerts a certain force on the helicoidal texture., Comment: 10 pages, 10 figures, accepted for publication in Phys. Rev. B

We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formalism. To account for the spin-resolved orbital magnetization a spin-dependent vector potential has been introduced. The spin currents which appear in thermal nonequilibrium due to the spin-resolved orbital magnetization play an important role in the spin Nernst effect, and have to be included in order to correctly describe the low-temperature spin Nernst conductivity., Comment: 9 pages, 2 figures

Thermally activated domain wall (DW) motion in magnetic insulators has been considered theoretically, with a particular focus on the role of Dzyaloshinskii-Moriya Interaction (DMI) and thermomagnonic torques. The thermally assisted DW motion is a consequence of the magnonic spin current due to the applied thermal bias. In addition to the exchange magnonic spin current and the exchange adiabatic and the entropic spin transfer torques, we also consider the DMI-induced magnonic spin current, thermomagnonic DMI field-like torque and the DMI entropic torque. Analytical estimations are supported by numerical calculations. We found that the DMI has a substantial influence on the size and the geometry of DWs, and that the DWs become oriented parallel to the long axis of the nanostrip. Increasing the temperature smoothes the DWs. Moreover, the thermallyinduced magnonic current generates a torque on the DWs, which is responsible for their motion. From our analysis it follows that for a large enough DMI the influence of DMI-induced field-like torque is much stronger than that of the DMI and the exchange entropic torques. By manipulating the strength of the DMI constant, one can control the speed of the DW motion, and the direction of the DW motion can be switched, as well. We also found that DMI not only contributes to the total magnonic current, but also it modifies the exchange magnonic spin current, and this modification depends on the orientation of the steady state magnetization. The observed phenomenon can be utilized in spin caloritronics devices, for example in the DMI based thermal diodes. By switching the magnetization direction, one can rectify the total magnonic spin current., Comment: 12 pages, 9 figures, accepted for publication in Phys. Rev. B

We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to semiconductor heterojunctions and is based on drift-diffusion equations. The solution of these equations allows to obtain the positions of band edges as a function of distances from the interface. We show that for the 2D metallic conductivity to appear at the interface, the constituting substances should have the same type (either electronic or hole) of conductivity; in the opposite case the possible transition to metallic phase has a three-dimensional character. The results of our model calculations are in agreement with available experimental data., Comment: 7 pages, 2 figures

We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hopping term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps of the constituting materials (LAO and STO). Moreover, our description predicts a {\it valve effect} at a certain critical potential strength, $U_{0cr}$, when the interface potential works as a valve suppressing the interfacial conductivity. In other words, the interfacial electrons become dispersionless at $U_0= U_{0cr}$, and thus cannot propagate. This critical value separates the {\it quasielectron} ($U_0<$ $U_{0cr}$) and {\it quasihole} ($U_0>$ $U_{0cr}$) regimes of the interfacial conductivity., Comment: 8 pages, 4 figures

Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity in the zero-temperature limit. Analytical formulas for the spin Hall and spin Nernst conductivities are derived in some specific situations. Using the Ioffe-Regel localization criterion, we have also estimated the range of parameters where the calculated results for the spin Hall and spin Nernst conductivities are applicable. Analytical results show that the vertex correction totally suppresses the spin Hall conductivity at arbitrary temperature. The spin Nernst conductivity, in turn, vanishes at $T=0$ when the orbital contribution is taken into account, but generally is nonzero at finite temperatures., Comment: 15 pages, 4 figures

The influence of an asymmetric in-plane magnetic anisotropy on the thermally activated spin current is studied theoretically for two different systems; (i) the system consisting of a ferromagnetic insulator in a direct contact with a nonmagnetic metal, and the sandwich structure consisting of a ferromagnetic insulating part sandwiched between two nonmagnetic metals. It is shown that when the difference between the temperatures of the two nonmagnetic metals in a structure is not large, the spin pumping currents from the magnetic part to the nonmagnetic ones are equal in amplitude and have opposite directions, so only the spin torque current contributes to the total spin current. The spin current flows then from the nonmagnetic metal with the higher temperature to the nonmagnetic metal having a lower temperature. Its amplitude varies linearly with the difference in temperatures. In addition, we have found that if the magnetic anisotropy is in the layer plane, then the spin current increases with the magnon temperature, while in the case of an out-of-plane magnetic anisotropy the spin current decreases when the magnon temperature enhances. Enlarging the difference between the temperatures of the nonmagnetic metals, the linear response becomes important, as confirmed by analytical expressions inferred from the Fokker-Planck approach and by the results obtained upon a full numerical integration of the stochastic Landau-Lifshitz-Gilbert equation., Comment: 11 pages, 9 figures

We consider theoretically a wide graphene ribbon, that on both ends is attached to electronic reservoirs which generally have different temperatures. The graphene ribbon is assumed to be deposited on a substrate, that leads to a spin-orbit coupling of Rashba type. We calculate the thermally induced charge current in the ballistic transport regime as well as the thermoelectric voltage (Seebeck effect). Apart from this, we also consider thermally induced spin current and spin polarization of the graphene ribbon. The spin currents are shown to have generally two components; one parallel to the temperature gradient and the other one perpendicular to this gradient. The latter corresponds to the spin current due to the spin Nernst effect. Additionally, we also consider the heat current between the reservoirs due to transfer of electrons.

We analyze theoretically optical generation of a spin-polarized charge current (photogalvanic effect) and spin polarization in graphene with Rashba spin-orbit coupling. An external magnetic field is applied in the graphene plane, which plays a crucial role in the mechanism of current generation. We predict a highly efficient resonant-like photogalvanic effect in a narrow frequency range which is determined by the magnetic field. A relatively less efficient photogalvanic effect appears in a broader frequency range, determined by the electron concentration and spin-orbit coupling strength.

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor., Comment: 3 pages, 5 figures, presented on The European Conference Physics of Magnetism 2014 (PM'14), June 23-27, 2014 Pozna\'n, POLAND

Thermoelectric effects in graphene are considered theoretically with particular attention paid to the role of impurities. Using the T -matrix method we calculate the impurity resonant states and the momentum relaxation time due to scattering on impurities. The Boltzmann kinetic equation is used to determine the thermoelectric coefficients. It is shown that the resonant impurity states near the Fermi level give rise to a resonant enhancement of the Seebeck coefficient and of the figure of merit $ZT$ . The Wiedemann-Franz ratio deviates from that known for ordinary metals, where this ratio is constant and equal to the Lorentz number. This deviation appears for small chemical potentials and in the vicinity of the resonant states. In the limit of a constant relaxation time, this ratio has been calculated analytically for $\mu=0$.

We discuss the role of spin-flip scattering of electrons from the magnetized edges in graphene nanoribbons. The spin-flip scattering is associated with strong fluctuations of the magnetic moments at the edge. Using the Boltzmann equation approach, which is valid for not too narrow nanoribbons, we calculate the spin relaxation time in the case of Berry-Mondragon and zigzag graphene edges. We also consider the case of ballistic nanoribbons characterized by very long momentum relaxation time in the bulk, when the main source of momentum and spin relaxation is the spin-dependent scattering at the edges. We found that in the case of zigzag edges, an anomalous spin diffusion is possible, which is related to very weak spin-flip scattering of electrons gliding along the nanoribbon edge., Comment: 9 pages, 7 figures

We calculate the efficiency of infrared optical spin injection in single-layer graphene with Rashba spin-orbit coupling and for in-plane magnetic field. The injection rate in the photon frequency range corresponding to the Rashba splitting is shown to be proportional to the ratio of the Zeeman and Rashba splittings. As a result, large spin polarization can be controllably achieved for experimentally available values of the spin-orbit coupling and in magnetic fields below 10 Tesla., Comment: 5 pages, 3 figures

Following the theoretical approach by Xiao et al [Phys. Rev. B 81, 214418 (2010)] to the spin Seebeck effect, we calculate the mean value of the total spin current flowing through a normalmetal/ ferromagnet interface. The spin current emitted from the ferromagnet to the normal metal is evaluated in the framework of the Fokker-Planck approach for the stochastic Landau-Lifshitz-Gilbert equation. We show that the total spin current depends not only on the temperature difference between the electron and the magnon baths, but also on the external magnetic field and magnetic anisotropy. Apart from this, the spin current is shown to saturate with increasing magnon temperature, and the saturation temperature increases with increasing magnetic field and/or magnetic anisotropy., Comment: 7 pages, 3 figures

We study the role of thermal fluctuations on the spin dynamics of a thin permalloy film with a focus on the behavior of spin torque and find that the thermally assisted spin torque results in new aspects of the magnetization dynamics. In particular, we uncover the formation of a finite, spin torque-induced, in-plane magnetization component. The orientation of the in-plane magnetization vector depends on the temperature and the spin-torque coupling. We investigate and illustrate that the variation of the temperature leads to a thermally-induced rotation of the in-plane magnetization., Comment: 9 pages, 12 figures