311 results on '"Dussaigne, A"'
Search Results
2. Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy
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Richter, Carsten, Kaganer, Vladimir M., Even, Armelle, Dussaigne, Amélie, Ferret, Pierre, Barbier, Frédéric, Vaillant, Yves-Matthieu Le, and Schülli, Tobias U.
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Condensed Matter - Materials Science - Abstract
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this work, we demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy. We develope a formalism to extract all components of strain and orientation from a set of scanning diffraction measurements and apply the technique to a patterned In$_x$Ga$_{1-x}$N double layer to study strain relaxation and indium incorporation phenomena. The contributions due to varying indium content and threading dislocations are separated and analyzed.
- Published
- 2022
3. Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
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Fedichkin, F., Andreakou, P., Jouault, B., Vladimirova, M., Guillet, T., Brimont, C., Valvin, P., Bretagnon, T., Dussaigne, A., Grandjean, N., and Lefebvre, P.
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Condensed Matter - Quantum Gases ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination., Comment: 11 pages, 8 figures
- Published
- 2015
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4. Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters.
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Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, and Raynaud, Christine
- Abstract
Aluminum nitride (AlN)-based acoustic filters are key devices of radio-frequency communications. However, the performance of electroacoustic resonators remains limited by the crystalline quality of the piezoelectric AlN material. An innovative material strategy that combines different types of materials (2D and 3D materials) and growth techniques is presented here to enhance the crystalline quality of thick AlN films grown on silicon-based substrates. Building upon previous works showing the efficacy of 2D MoS
2 in sputtered-AlN texturing, this paper demonstrates how an in situ thermochemical treatment of the sputtered-AlN/MoS2 seed layers succeeded by a metal organic vapor phase epitaxy (MOVPE) AlN regrowth significantly enhances the crystalline quality of the AlN layer and avoids the detrimental stack delamination at the weak AlN/MoS2 interface. This paper shows that a delicate balance in the thickness of the sputtered-AlN film should be found to facilitate species diffusion toward the underlying MoS2 without compromising its texturizing properties for the subsequent MOVPE AlN regrowth. The sputtered-AlN/MoS2 seed layers involve a nanometric AlN film of less than 5 nm deposited onto three monolayers of MoS2 . The heat treatment induces an unexpected chemical and structural nanometric reorganization at the interface, converting the initial lamellar MoS2 film into a discontinuous covalently bonded MoNx Oy film, followed by the appearance of metallic Mo nanoparticles at an elevated temperature. Subsequent MOVPE AlN regrowth on the annealed seed layer stacks enables the growth of thick AlN films of up to 600 nm with a mosaicity of less than 0.3° without delamination or cracks. This approach not only facilitates the integration of thick AlN films on Si-based wafers but also opens avenues for growing III–N or other 3D materials on Si through the intercalation of 2D materials. [ABSTRACT FROM AUTHOR]- Published
- 2024
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5. Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors
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Mrad, Mrad, Licitra, Christophe, Dussaigne, Amélie, Yon, Victor, Richy, Jérôme, Lafossas, Matthieu, Kanyandekwe, Joel, Feuillet, Guy, and Charles, Matthew
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- 2020
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6. Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
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Dussaigne, A., Barbier, F., Samuel, B., Even, A., Templier, R., Lévy, F., Ledoux, O., Rozhavskaia, M., and Sotta, D.
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- 2020
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7. Native InGaN red-green-blue micro-LEDs for full color micro-displays
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Dussaigne, Amélie, primary, Barbier, Frederic, additional, Haas, Helge, additional, Pillet, Jean-Christophe, additional, Samuel, Benjamin, additional, Veux, Guillaume, additional, and Le Maitre, Patrick, additional
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- 2023
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8. Native InGaN red-green-blue micro-LEDs for full color micro-displays
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Amélie Dussaigne, Frederic Barbier, Helge Haas, Jean-Christophe Pillet, Benjamin Samuel, Guillaume Veux, and Patrick Le Maitre
- Published
- 2023
9. Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells.
- Author
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Samuel, B., Cooper, D., Rochat, N., Mavel, A., Barbier, F., and Dussaigne, A.
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PHOSPHORS ,QUANTUM wells ,SCANNING transmission electron microscopy ,FOCUSED ion beams ,QUANTUM efficiency - Abstract
The origin of the nanoscale emission inhomogeneities of red emitting InGaN/InGaN quantum wells (QWs) grown directly on a GaN template and on an InGaN on sapphire (InGaNOS) substrate is investigated. InGaNOS is a partly relaxed InGaN pseudo-substrate fabricated by Soitec. As the latter approach provides an interesting optical internal quantum efficiency of 6.5% at 624 nm at 290 K, a deeper study, at the microstructure level, was conducted. The emission inhomogeneities on InGaNOS were highlighted by cathodoluminescence wavelength mappings where three areas were chosen: one emitting at a shorter wavelength, i.e., 588 nm, and two at a longer wavelength, i.e., 607 and 611 nm. Specimens from these zones were extracted by focused ion beam milling to perform cross-sectional characterization techniques. High-angle annular dark field scanning transmission electron microscopy images demonstrated that, while red emitting areas present homogeneous QWs, shorter wavelength areas exhibit non-uniform QWs, in terms of thickness and In composition. Complementary deformation mappings in the growth direction obtained by geometrical phase analysis show that longer emission wavelengths are originating from homogeneous QWs with an InN mole fraction evaluated at 39.0 ± 1.5%. This result demonstrates the possibility of achieving red emission with a coherent (In,Ga)N alloy when using an adapted substrate. A comparison of identical QWs grown on a GaN template is also given. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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10. In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption
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Gerthsen, D, primary, Hahn, E, additional, Potin, V, additional, Rosenauer, A, additional, Kuhn, B, additional, Off, J, additional, Scholz, F, additional, Dussaigne, A, additional, and Grandjean, N, additional
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- 2018
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11. Nanoscale Mapping of the Full Strain Tensor, Rotation, and Composition in Partially Relaxed InxGa1−xN Layers by Scanning X-ray Diffraction Microscopy
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Richter, Carsten, primary, Kaganer, Vladimir M., additional, Even, Armelle, additional, Dussaigne, Amélie, additional, Ferret, Pierre, additional, Barbier, Frédéric, additional, Le Vaillant, Yves-Matthieu, additional, and Schülli, Tobias U., additional
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- 2022
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12. Nanoscale Mapping of the Full Strain Tensor, Rotation, and Composition in Partially Relaxed InxGa1−xN Layers by Scanning X-ray Diffraction Microscopy
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Carsten Richter, Vladimir M. Kaganer, Armelle Even, Amélie Dussaigne, Pierre Ferret, Frédéric Barbier, Yves-Matthieu Le Vaillant, and Tobias U. Schülli
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General Physics and Astronomy - Published
- 2022
13. Full InGaN red light emitting diodes.
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Dussaigne, A., Barbier, F., Damilano, B., Chenot, S., Grenier, A., Papon, A. M., Samuel, B., Ben Bakir, B., Vaufrey, D., Pillet, J. C., Gasse, A., Ledoux, O., Rozhavskaya, M., and Sotta, D.
- Subjects
- *
LIGHT emitting diodes , *INDIUM gallium nitride , *NITROGEN , *QUANTUM efficiency , *QUANTUM wells , *BUFFER layers , *DELAYED fluorescence - Abstract
The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec, namely, InGaNOS, a n-doped buffer layer formed by a set of InxGa1−xN/GaN superlattices, thin InyGa1−yN/InxGa1−xN multiple quantum wells, and a p doped InxGa1−xN area. p-doped InGaN layers are first studied to determine the optimal Mg concentration. In the case of an In content of 2%, an acceptor concentration of 1 × 1019/cm3 was measured for a Mg concentration of 2 × 1019/cm3. Red electroluminescence was then demonstrated for two generations of LEDs, including chip sizes of 300 × 300 μm2 and 50 × 50 μm2. The differences between these two LED generations are detailed. For both devices, red emission with a peak wavelength at 620 nm was observed for a pumping current density of 12 A/cm2. Red light-emission is maintained over the entire tested current range. From the first to the second LED generation, the maximum external quantum efficiency, obtained in the range of 17–40 A/cm2, was increased by almost one order of magnitude (a factor of 9), thanks to the different optimizations. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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14. Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography.
- Author
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Amichi, Lynda, Mouton, Isabelle, Di Russo, Enrico, Boureau, Victor, Barbier, Frédéric, Dussaigne, Amélie, Grenier, Adeline, Jouneau, Pierre-Henri, Bougerol, Catherine, and Cooper, David
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ATOM-probe tomography ,ELECTRON holography ,METAL organic chemical vapor deposition ,MAGNESIUM ions ,ELECTRIC potential ,GALLIUM nitride - Abstract
The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 × 10
19 cm−3 . Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 × 1020 cm−3 , despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential. [ABSTRACT FROM AUTHOR]- Published
- 2020
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15. Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
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Salomon, Damien, Dussaigne, Amelie, Lafossas, Matthieu, Durand, Christophe, Bougerol, Catherine, Ferret, Pierre, and Eymery, Joel
- Published
- 2013
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16. Selective area growth of AlGaN nanopyramids by conventional and pulsed MOVPE
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Brigitte Martin, Constantin Matei, Bernard Gil, Amélie Dussaigne, Roselyne Templier, Sofia Boughaleb, Névine Rochat, Łukasz Borowik, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), S2QT, and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
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Materials science ,Bioengineering ,02 engineering and technology ,Substrate (electronics) ,010402 general chemistry ,Epitaxy ,selective area growth ,01 natural sciences ,law.invention ,pulsed growth mode ,MOVPE ,law ,General Materials Science ,Metalorganic vapour phase epitaxy ,Electrical and Electronic Engineering ,Deposition (law) ,Pyramid (geometry) ,business.industry ,Mechanical Engineering ,Doping ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,AlGaN pyramids ,AlGaN alloy ,Mechanics of Materials ,UV LEDs ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,Optoelectronics ,Dislocation ,0210 nano-technology ,business ,Light-emitting diode - Abstract
Planar UV-C light emitting diodes still suffer from low efficiency, mainly due to substrate crystalline quality, p doped conductivity and extraction efficiency. One possible way to overcome partly these issues is to realize the whole UV structure on AlGaN pyramids by selective area growth in order to benefit from the advantages of such structures, i.e. the dislocation filtering and the semi polar planes. We present here a detailed study about the epitaxy of AlGaN nano-sized pyramids by metal organic vapor phase epitaxy on patterned templates presenting different holes apertures and pitches as 1.5 μm and 4 μm or 100 nm and 250 nm respectively. While increasing the Al content, their height decreases while the thickness of the deposition on the mask increases whatever the design of the mask. Those changes of the pyramid shapes and deposition are directly linked to the properties of Al adatoms, i.e. low Al diffusion length. Using the conventional growth mode for the epitaxy of those pyramids did not permit the incorporation of Al from the base of the pyramids to their truncated apex. Its presence was concentrated on the edges and top of the pyramids. On the contrary, a pulsed growth mode, coupled with a strongly reduced pitch, allowed an incorporation of Al since the base of the nanopyramid, and a decrease of the deposition height on the mask. These results can be explained by the desorption of Ga species, due to the presence of H2 in the reactor chamber during the step without the metal precursors, leading to a higher Al/Ga ratio. It is even enhanced inside the holes by the reduced pitch.
- Published
- 2021
17. Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
- Author
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Dussaigne, Amelie, primary, Le Maitre, Patrick, additional, Haas, Helge, additional, Pillet, Jean-Christophe, additional, Barbier, Frederic, additional, Grenier, Adeline, additional, Michit, Nicolas, additional, Jannaud, Audrey, additional, Templier, Roselyne, additional, Vaufrey, David, additional, Rol, Fabian, additional, Ledoux, Olivier, additional, and Sotta, David, additional
- Published
- 2021
- Full Text
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18. GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy
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Dussaigne, A., Malinverni, M., Martin, D., Castiglia, A., and Grandjean, N.
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- 2009
- Full Text
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19. Full InGaN red micro light emitting diodes: How to enhance the InN mole fraction
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Amélie Dussaigne
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Materials science ,business.industry ,Alloy ,Substrate (electronics) ,engineering.material ,Mole fraction ,Dot pitch ,law.invention ,law ,engineering ,Optoelectronics ,Quantum efficiency ,business ,Quantum well ,Diode ,Light-emitting diode - Abstract
Micro-displays with pixel pitch smaller than 10 µm are required for augmented reality. The three primary colors can then be achieved with the same material: the InxGa1-xN alloy. However, when strained on GaN, its InN mole fraction x is limited to 25%. By using a full InGaN structure grown on a relaxed InGaN pseudo-substrate, such as the InGaNOS substrate from Soitec, the In incorporation rate is enhanced. An internal quantum efficiency higher than 10% at 640 nm an In content higher than 25% in InxGa1-xN/InyGa1-yN quantum wells will be shown. 10x10 µm² red micro-light emitting diodes will be also presented.
- Published
- 2021
20. Dynamics of AlGaN based detectors in the deep-UV
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Mazzeo, G., Reverchon, J.-L., Conte, G., Dussaigne, A., and Duboz, J.-Y.
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- 2008
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21. Full InGaN red micro light emitting diodes: How to enhance the InN mole fraction
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Dussaigne, Amélie, primary
- Published
- 2021
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22. Selective area growth of AlGaN nanopyramids by conventional and pulsed MOVPE
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Boughaleb, Sofia, primary, Martin, Brigitte, additional, Matei, Constantin, additional, Templier, Roselyne, additional, Borowik, Łukasz, additional, Rochat, Nevine, additional, Gil, Bernard, additional, and Dussaigne, Amélie, additional
- Published
- 2021
- Full Text
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23. Gallium pollution in an AIXTRON close coupled showerhead reactor and its serious effect on the growth process stability of InGaN layers for optoelectronic applications (Conference Presentation)
- Author
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Guy Feuillet, Jérôme Richy, Matthew Charles, Amelie Dussaigne, Victor Yon, Mrad Mrad, Christophe Licitra, Matthieu Lafossas, and Joël Kanyandekwe
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Pollution ,Materials science ,chemistry ,business.industry ,Scientific method ,media_common.quotation_subject ,Optoelectronics ,chemistry.chemical_element ,Limiting ,Gallium ,business ,Indium ,media_common - Abstract
InGaN-based devices have attracted a lot of attention, thanks to versatile optoelectronic applications. We show that the growth of these layers in an AIXTRON Close Coupled Showerhead is complicated due to the presence of gallium pollution in the chamber after the growth of GaN buffer layers. This pollution reacts with the TMIn precursor in the growth chamber to give thicker InGaN layers with reduced indium incorporation. We overcame this problem by limiting the presence of the metallic gallium in the growth chamber, resulting in more stable and predictable growth of InGaN layers.
- Published
- 2020
24. Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
- Author
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F. Barbier, Amélie Dussaigne, F. Levy, B. Samuel, Olivier Ledoux, Roselyne Templier, David Sotta, Armelle Even, M. Rozhavskaia, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SOITEC Bernin, France, and SOITEC
- Subjects
B3. red LED ,Photoluminescence ,Materials science ,Superlattice ,02 engineering and technology ,Substrate (electronics) ,01 natural sciences ,Inorganic Chemistry ,Laser linewidth ,A1. V pit ,0103 physical sciences ,Materials Chemistry ,Surface roughness ,010302 applied physics ,[PHYS]Physics [physics] ,A3. superlattice ,business.industry ,B1. InGaN ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,B3. micro-display ,Sapphire ,A3. MOVPE ,Optoelectronics ,Quantum efficiency ,0210 nano-technology ,business ,Layer (electronics) - Abstract
International audience; The InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance the In incorporation rate in In$_y$Ga$_{1-y}$N/In$_x$Ga$_{1-x}$N multiple quantum wells (MQWs) to get red emission for micro-display applications. However, the starting material for the InGaNOS fabrication is a nonoptimized In0.08Ga0.92N layer grown on GaN on sapphire substrate which exhibits V shaped defects (V pits). Such V pits remain afterwards in the final InGaNOS substrate. We demonstrate here that In$_x$Ga$_{1-x}$N/GaN superlattice has the potential to cover or fill the native V pits while maintaining a pseudomorphic growth. A combination of a thin GaN interlayer and an InGaN layer in a slight tensile strain state for each pair of the superlattice is necessary to achieve this goal. In addition, it is shown that the presence of GaN interlayers improves the material quality and the surface roughness. (002) X-ray diffraction rocking curve linewidth reduces to 780 arcsec compared to 3000 arcsec for the substrate. Finally, In$_y$Ga$_{1-y}$N/In$_x$Ga$_{1-x}$N multiple quantum wells grown on In$_x$Ga$_{1-x}$N/GaN superlattice buffer layer on InGaNOS 3.205Ȧ substrate shows a central emission wavelength, measured by photoluminescence, of 624 nm at 290K with an optical internal quantum efficiency value of 6.5%.
- Published
- 2020
25. Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
- Author
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Amélie Dussaigne, Enrico Di Russo, Adeline Grenier, L. Amichi, Pierre-Henri Jouneau, David Cooper, Catherine Bougerol, Isabelle Mouton, Victor Boureau, F. Barbier, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Nanophysique et Semiconducteurs (NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and Nanophysique et Semiconducteurs (NEEL - NPSC)
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010302 applied physics ,Materials science ,Dopant ,Doping ,Analytical chemistry ,General Physics and Astronomy ,Gallium nitride ,02 engineering and technology ,Atom probe ,Chemical vapor deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electron holography ,law.invention ,Metal ,chemistry.chemical_compound ,chemistry ,law ,visual_art ,0103 physical sciences ,visual_art.visual_art_medium ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,0210 nano-technology ,Saturation (magnetic) - Abstract
International audience; The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 x 10 19 cm-3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 x 10 20 cm-3 , despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential.
- Published
- 2020
26. InGaN islands and thin films grown on epitaxial graphene
- Author
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Benjamin Damilano, Bérangère Hyot, Adrien Michon, Stéphane Vézian, C Matei, Amélie Dussaigne, C Paillet, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
- Subjects
Materials science ,Alloy ,Nucleation ,Bioengineering ,02 engineering and technology ,engineering.material ,010402 general chemistry ,Epitaxy ,01 natural sciences ,law.invention ,symbols.namesake ,law ,General Materials Science ,Electrical and Electronic Engineering ,Thin film ,Graphene ,business.industry ,Mechanical Engineering ,General Chemistry ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Mechanics of Materials ,symbols ,engineering ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business ,Raman scattering ,Molecular beam epitaxy - Abstract
International audience; In this work is studied the growth of InGaN on epitaxial graphene by molecular beam epitaxy. The nucleation of the alloy follows a three-dimensional (3D) growth mode, in the explored temperature range of 515-765°C, leading to the formation of dendrite-like islands. Careful Raman scattering experiments show that the graphene underneath is not degraded by the InGaN growth. Moreover, lateral displacement of the nuclei during an atomic force microscopy scan demonstrate weak bonding interactions between InGaN and graphene. Finally, a longer growth time of the alloy gives rise to a compact thin film in partial epitaxial relationship with the SiC underneath the graphene.
- Published
- 2020
27. Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
- Author
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Adeline Grenier, Le Maitre Patrick, Amélie Dussaigne, Roselyne Templier, F. Barbier, David Sotta, Fabian Rol, A. Jannaud, Helge Haas, Olivier Ledoux, Nicolas Michit, David Vaufrey, and Jean-Christophe Pillet
- Subjects
Materials science ,business.industry ,General Engineering ,General Physics and Astronomy ,Optoelectronics ,Substrate (chemistry) ,business - Published
- 2021
28. Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography
- Author
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Cooper, D, primary, Boureau, V, additional, Even, A, additional, Barbier, F, additional, and Dussaigne, A, additional
- Published
- 2020
- Full Text
- View/download PDF
29. InGaN islands and thin films grown on epitaxial graphene
- Author
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Paillet, C, primary, Vézian, S, additional, Matei, C, additional, Michon, A, additional, Damilano, B, additional, Dussaigne, A, additional, and Hyot, B, additional
- Published
- 2020
- Full Text
- View/download PDF
30. Gallium pollution in an AIXTRON close coupled showerhead reactor and its serious effect on the growth process stability of InGaN layers for optoelectronic applications (Conference Presentation)
- Author
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Mrad, Mrad, primary, Licitra, Christophe, additional, Dussaigne, Amelie, additional, Yon, Victor, additional, Richy, Jerome, additional, Lafossas, Matthieu, additional, Kanyandekwe, Joel, additional, Feuillet, Guy, additional, and Charles, Matthew, additional
- Published
- 2020
- Full Text
- View/download PDF
31. Origins of nanoscale emission inhomogeneities of high content red emitting InGaN/InGaN quantum wells
- Author
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F. Barbier, A. Mavel, B. Samuel, David Cooper, Amélie Dussaigne, and Névine Rochat
- Subjects
010302 applied physics ,Materials science ,business.industry ,General Physics and Astronomy ,Cathodoluminescence ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,01 natural sciences ,Focused ion beam ,Dark field microscopy ,Wavelength ,0103 physical sciences ,Sapphire ,Optoelectronics ,Quantum efficiency ,0210 nano-technology ,business ,Quantum well - Abstract
The origin of the nanoscale emission inhomogeneities of red emitting InGaN/InGaN quantum wells (QWs) grown directly on a GaN template and on an InGaN on sapphire (InGaNOS) substrate is investigated. InGaNOS is a partly relaxed InGaN pseudo-substrate fabricated by Soitec. As the latter approach provides an interesting optical internal quantum efficiency of 6.5% at 624 nm at 290 K, a deeper study, at the microstructure level, was conducted. The emission inhomogeneities on InGaNOS were highlighted by cathodoluminescence wavelength mappings where three areas were chosen: one emitting at a shorter wavelength, i.e., 588 nm, and two at a longer wavelength, i.e., 607 and 611 nm. Specimens from these zones were extracted by focused ion beam milling to perform cross-sectional characterization techniques. High-angle annular dark field scanning transmission electron microscopy images demonstrated that, while red emitting areas present homogeneous QWs, shorter wavelength areas exhibit non-uniform QWs, in terms of thickness and In composition. Complementary deformation mappings in the growth direction obtained by geometrical phase analysis show that longer emission wavelengths are originating from homogeneous QWs with an InN mole fraction evaluated at 39.0 ± 1.5%. This result demonstrates the possibility of achieving red emission with a coherent (In,Ga)N alloy when using an adapted substrate. A comparison of identical QWs grown on a GaN template is also given.
- Published
- 2021
32. Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy
- Author
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C. Bougerol, L. Amichi, A. Dussaigne, A. Grenier, P.H. Jouneau, E. Monroy, E. Robin, Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
- Subjects
[PHYS]Physics [physics] ,[SPI]Engineering Sciences [physics] ,Materials science ,law ,Doping ,Physical chemistry ,Atom probe ,Nitride ,Spectroscopy ,law.invention - Abstract
International audience; Atom Probe Tomography (APT) has emerged as a reliable chemical analysis technique as it provides access to the chemical composition of the analyzed material together with the 3D distribution of the atoms in a tip-shaped specimen with hundred-nanometer diameter. Moreover, combining APT with EDX enables first to overcome some artefacts inherent to APT to get quantitative data but also permits to investigate nanostructures from nano-to micro-scale. We have successfully applied these techniques for studying both n-type (Ge) and p-type (Mg) doping of AlGaN layers.
- Published
- 2019
33. Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nm
- Author
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Benjamin Damilano, Amélie Dussaigne, Melanie Lagrange, David Sotta, Sébastien Chenot, Eric Guiot, Guillaume Lavaitte, and Olivier Ledoux
- Subjects
Materials science ,business.industry ,Substrate (electronics) ,Epitaxy ,law.invention ,Full width at half maximum ,Lattice constant ,law ,Content (measure theory) ,Optoelectronics ,Wafer ,Metalorganic vapour phase epitaxy ,business ,Light-emitting diode - Abstract
Micro displays targeting virtual and augmented reality applications require pixel size in the range of $10\times 10\mu \mathrm{m}$ or below. Having InGaN based LEDs to emit directly over the full red-green-blue (RGB) spectrum would enable a cost effective transfer and integration. Green and red InGaN based LEDs initially suffer from low internal quantum efficiencies (IQE) and external quantum efficiencies (EQE) as compared to blue LEDs. One solution could be to reduce the strain in the overall structure thanks to an InGaN pseudo-substrate. The Smart Cut™technology enables the layer transfer and strain relaxation of patterned InGaN films. Pattern size can extend from $10\mu \mathrm{m}$ up to 1mm. This process is today available on 100mm and is being transferred to 150mm wafers. According to the In content of the donor InGaN layer, the a (in-plane) lattice parameter can be tuned up to 3.219A. Full InGaN LED containing InGaN/InGaN multiple quantum wells structures are grown by metalorganic vapor phase epitaxy (MOVPE) on this engineered substrate with a lattice parameter of 3.205A. Long wavelengths have been reached, up to 630nm with FWHM of 48nm at 0.8 A/cm2, thanks to the reduced strain in the overall structure which enables a higher In incorporation during the growth.
- Published
- 2019
34. About some optical properties of Al xGa 1− xN /GaN quantum wells grown by molecular beam epitaxy
- Author
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Leroux, M., Semond, F., Natali, F., Byrne, D., Cadoret, F., Damilano, B., Dussaigne, A., Grandjean, N., Le Louarn, A., Vézian, S., and Massies, J.
- Published
- 2004
- Full Text
- View/download PDF
35. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
- Author
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Potin, V., Hahn, E., Rosenauer, A., Gerthsen, D., Kuhn, B., Scholz, F., Dussaigne, A., Damilano, B., and Grandjean, N.
- Published
- 2004
- Full Text
- View/download PDF
36. In surface segregation in InGaN/GaN quantum wells
- Author
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Dussaigne, A., Damilano, B., Grandjean, N., and Massies, J.
- Published
- 2003
- Full Text
- View/download PDF
37. Control of the polarity of GaN films using an Mg adsorption layer
- Author
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Grandjean, N., Dussaigne, A., Pezzagna, S., and Vennéguès, P.
- Published
- 2003
- Full Text
- View/download PDF
38. Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography
- Author
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David Cooper, Armelle Even, Amélie Dussaigne, F. Barbier, and Victor Boureau
- Subjects
differential phase-contrast ,Materials science ,inganos ,Energy-dispersive X-ray spectroscopy ,chemistry.chemical_element ,Bioengineering ,02 engineering and technology ,010402 general chemistry ,Epitaxy ,01 natural sciences ,gan ,Electron holography ,law.invention ,strain ,law ,leds ,Precession electron diffraction ,General Materials Science ,piezoelectric potentials ,Electrical and Electronic Engineering ,semiconductor specimens ,Quantum well ,business.industry ,Mechanical Engineering ,off-axis electron holography ,resolution ,General Chemistry ,021001 nanoscience & nanotechnology ,field ,0104 chemical sciences ,precession electron diffraction ,energy dispersive x-ray spectroscopy ,x-ray diffraction ,chemistry ,Mechanics of Materials ,Transmission electron microscopy ,Optoelectronics ,0210 nano-technology ,business ,Indium ,Light-emitting diode - Abstract
Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green emission has been demonstrated at wavelengths of 500 nm for the GaN template and 525 and 549 nm for the InGaNOS substrates, respectively. The structure, deformation, indium concentration and piezoelectric potentials have been measured with nm-scale spatial resolution in the same specimens by transmission electron microscopy. We show by off-axis electron holography that the piezoelectric potential and information about the indium concentration from the mean inner potential are obtained simultaneously. By separating the components using a model, we show that for higher concentrations of indium in the quantum wells (QWs) grown on InGaNOS substrates, the piezoelectric potentials are reduced. The measurements of the indium concentrations by electron holography have been verified by combining energy dispersive x-ray spectrometry, x-ray diffraction and from the tensile deformation made by precession electron diffraction. A discussion of the limitations of these advanced aberration-corrected transmission electron microscopy techniques when applied to nm-scale QW structures is given.
- Published
- 2020
39. Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors
- Author
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Matthieu Lafossas, Amélie Dussaigne, Christophe Licitra, Matthew Charles, Jérôme Richy, Victor Yon, Guy Feuillet, Joël Kanyandekwe, and Mrad Mrad
- Subjects
Pollution ,Chemical substance ,Materials science ,media_common.quotation_subject ,chemistry.chemical_element ,02 engineering and technology ,Epitaxy ,01 natural sciences ,Inorganic Chemistry ,Metal ,0103 physical sciences ,Materials Chemistry ,Metalorganic vapour phase epitaxy ,Gallium ,media_common ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,chemistry ,visual_art ,visual_art.visual_art_medium ,Optoelectronics ,0210 nano-technology ,Science, technology and society ,business ,Indium - Abstract
We show that gallium pollution in an AIXTRON Close Coupled Showerhead (CCS) Metal-Organic Vapor Phase Epitaxy (MOVPE) reactor can strongly affect the growth process stability of InGaN layers. By comparing growth with and without gallium pollution from the showerhead, we find a decrease in the indium incorporation and an increase in layer thickness of up to three times when the pollution is present. This phenomenon varies with the quantity of gallium on the showerhead, with increased gallium due to thicker GaN growth causing a stronger effect. Higher TMIn flows also give a more pronounced effect. These data support our previous hypothesis of TMIn reacting with metallic gallium present on the showerhead surface to release TMGa, which is then incorporated as Ga into the grown layers. This study of the effect of gallium contamination on InGaN layers in CCS MOVPE reactors leads us to suggest that the growth in CCS reactors should be performed free from gallium pollution to give more stable and comprehensible results.
- Published
- 2020
40. Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy
- Author
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Bougerol, C., primary, Amichi, L., additional, Dussaigne, A., additional, Grenier, A., additional, Jouneau, P.H., additional, Monroy, E., additional, and Robin, E., additional
- Published
- 2019
- Full Text
- View/download PDF
41. Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nm
- Author
-
Guiot, Eric, primary, Sotta, David, additional, Ledoux, Olivier, additional, Lagrange, Melanie, additional, Lavaitte, Guillaume, additional, Dussaigne, Amelie, additional, Chenot, Sebastien, additional, and Damilano, Benjamin, additional
- Published
- 2019
- Full Text
- View/download PDF
42. Long wavelength emission on relaxed InGaN substrates (Conference Presentation)
- Author
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Pierre Ferret, Ivan-Christophe Robin, Gautier Laval, Amélie Dussaigne, F. Levy, Olivier Ledoux, David Sotta, Armelle Even, and Eric Guiot
- Subjects
Blue laser ,Materials science ,Photoluminescence ,business.industry ,Quantum-confined Stark effect ,Gallium nitride ,Indium gallium nitride ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Quantum efficiency ,business ,Quantum well ,Light-emitting diode - Abstract
InGaN based LEDs are known to be very efficient in the blue range. However, although InGaN can theoretically cover all visible range, quantum efficiency drops when emission wavelength emission is increased due to quantum confined Stark effect. Furthermore, indium incorporation is hindered by compressive strain induced by lattice mismatch between InGaN and GaN. To tackle the lattice mismatch problem, a full InGaN structure on a relaxed InGaN substrate is proposed. The structure consisting of five InxGa1-xN / InyGa1-yN multi quantum wells on top of an InyGa1-yN buffer layer is grown by MOVPE on an InGaNOs substrate from Soitec company. Three InGaNOs substrates of lattice parameters of 3.190, 3.200 and 3.205 Angstroms were co-loaded in order to compare their ability to incorporate indium for the same growth conditions. For reference, a sample grown on GaN template will allow us to compare the wavelength red-shift resulting of the use of InGaNOs template. The samples were characterized by photoluminescence at room temperature using 375 nm and 405 nm laser diodes. It is shown that long wavelengths can be reached thanks to the use of InGaNOs substrates. For same active region growth conditions as reference sample, a red-shift up to 65 nm (from 445 to 510 nm) is observed, demonstrating InGaNOs potential for easier In incorporation. Using different growth conditions, wavelengths up to 600 nm have been reached. First internal quantum efficiency measurements demonstrate a good quality material. InGaNOs seems promising for emission in the “green gap”and beyond.
- Published
- 2017
43. Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
- Author
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Amélie Dussaigne, Raphaël Butté, L. Lahourcade, Catherine Bougerol, Nicolas Grandjean, Gwénolé Jacopin, Georg Rossbach, Benoit Deveaud, Wei Liu, Mehran Shahmohammadi, Ecole Polytechnique Fédérale de Lausanne (EPFL), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Nanophysique et Semiconducteurs (NPSC)
- Subjects
010302 applied physics ,Physics ,Photoluminescence ,Auger effect ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Polarization (waves) ,01 natural sciences ,Auger ,symbols.namesake ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,symbols ,Optoelectronics ,Voltage droop ,0210 nano-technology ,Spectroscopy ,business ,ComputingMilieux_MISCELLANEOUS ,Quantum well ,Excitation - Abstract
The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW carrier density. In a first set of experiments, it is shown that a polar InGaN/GaN QW under nonresonant high optical excitation shows clear signatures of Auger loss mechanism and thus behaves quite differently compared to its binary based GaN/AlGaN QW counterpart, where no Auger signature is observed. In order to get rid of the impact of the built-in polarization field and illustrate the dominant role of carrier localization, similar experiments have been conducted on two m-plane In GaN/GaN QWs with similar In composition but a different degree of disorder. We demonstrate that carrier localization strongly enhances the Auger recombination process in nonpolar In GaN/GaN QWs. We also show that this effect may be further amplified by the presence of polarization fields on polar QWs. The relaxation of the k-selection rule during the Auger recombination process, resulting from QW potential disorder, can account for the enhancement of the efficiency droop in In GaN/GaN QWs.
- Published
- 2017
44. Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
- Author
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Olivier Ledoux, Ivan-Christophe Robin, G. Laval, Pierre Ferret, A. Even, Amelie Dussaigne, Eric Guiot, Francois Levy, David Sotta, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SOITEC SA, and French State through the 'Investissements d'Avenir' BRIGHT program
- Subjects
010302 applied physics ,Materials science ,Photoluminescence ,Physics and Astronomy (miscellaneous) ,business.industry ,Multiple quantum ,chemistry.chemical_element ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Redshift ,[SPI]Engineering Sciences [physics] ,Lattice constant ,chemistry ,Lattice (order) ,0103 physical sciences ,Sapphire ,Optoelectronics ,0210 nano-technology ,business ,Indium - Abstract
International audience; The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with different a lattice parameters ranging from 3.190 to 3.205 angstrom, that is to say, greater than that of a GaN template on sapphire. Samples were loaded together in the growth chamber in order to apply exactly the same growth conditions. The effect of the photoluminescence (PL) emission redshift was observed on InyGa1-yN buffer layers and also on InxGa1-xN/InyGa1-yN multiple quantum wells (MQWs). It was found that these pseudosubstrates have the ability to improve the indium incorporation rate, with an increasing effect as the a lattice parameter increases. A strong PL emission redshift was observed in InxGa1-xN/InyGa1-yN MQWs as a function of the increasing a lattice parameter of the InGaN pseudosubstrate, compared to a reference grown on a GaN template. It has been shown that green and amber emissions can be easily reached. A redshift of up to 42 nm was detected between various InGaN pseudosubstrate samples and up to 62 nm compared to a conventional structure emerged from a GaN buffer on the sapphire substrate. The average QW width less than 3 nm indicates a higher In content. The reduced compressive strain originating from the relaxed InGaN substrate allows the reduction in the compositional pulling effect and consequently enables an enhanced In incorporation rate.
- Published
- 2017
45. Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN.
- Author
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Corfdir, P., Dussaigne, A., Teisseyre, H., Suski, T., Grzegory, I., Lefebvre, P., Giraud, E., Ganière, J.-D., Grandjean, N., and Deveaud-Plédran, B.
- Subjects
- *
PHOTOLUMINESCENCE , *GALLIUM nitride , *MOLECULAR beam epitaxy , *EXCITON theory , *CHARGE carrier capture , *ALUMINUM - Abstract
We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons τ increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing τ depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs. [ABSTRACT FROM AUTHOR]
- Published
- 2012
- Full Text
- View/download PDF
46. Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.
- Author
-
Corfdir, P., Lefebvre, P., Balet, L., Sonderegger, S., Dussaigne, A., Zhu, T., Martin, D., Ganière, J.-D., Grandjean, N., and Deveaud-Plédran, B.
- Subjects
EXCITON theory ,RECOMBINATION in semiconductors ,CATHODOLUMINESCENCE ,PHOTOLUMINESCENCE ,QUANTUM wells ,NANOWIRES - Abstract
We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons localized on basal stacking faults (BSFs) crossing the QW plane, forming quantum wires (QWRs) at the intersection. We show that the dynamics of QW excitons is dominated by their capture on QWRs, with characteristic decay times ranging from 50 to 350 ps, depending on whether the local density of BSFs is large or small. We therefore relate the multiexponential behavior generally observed by time-resolved photoluminescence in non-polar (Al,Ga)/GaN QW to the spatial dependence of QW exciton dynamics on the local BSF density. QWR exciton decay time is independent of the local density in BSFs and its temperature evolution exhibits a zero-dimensional behavior below 60 K. We propose that QWR exciton localization along the wire axis is induced by well-width fluctuation, reproducing in a one-dimensional system the localization processes usually observed in QWs. [ABSTRACT FROM AUTHOR]
- Published
- 2010
- Full Text
- View/download PDF
47. Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions.
- Author
-
Teisseyre, H., Kaminska, A., Franssen, G., Dussaigne, A., Grandjean, N., Grzegory, I., Łucznik, B., and Suski, T.
- Subjects
GALLIUM nitride ,ALUMINUM ,QUANTUM wells ,MOLECULAR beam epitaxy ,AMMONIA ,STARK effect ,ELECTRIC fields ,REDSHIFT - Abstract
High quality GaN/AlGaN multiquantum well (QW) structures were grown by ammonia molecular beam epitaxy along the (0001) polar and [formula] nonpolar directions. Each sample contains three QWs with thicknesses of 2, 3, and 4 nm as well as 10 nm Al
0.30 Ga0.70 N barriers. The measured photoluminescence (PL) spectrum consists of three peaks originating from the radiative recombination of excitons in individual QWs. In the nonpolar sample, the energy positions (EPL ) of the observed peaks are separated because of the quantum confinement effect, whereas in the polar sample an additional redshift is induced by the quantum confined Stark effect. The dependence of EPL on QW width was used to estimate the built-in electric field magnitude in the latter sample to be about 2 MV/cm. Hydrostatic pressure studies of the PL in both samples gave qualitatively different results. In the polar sample, the pressure shift of EPL , dEPL /dp decreases significantly with QW width. The important finding is derived from the observation of a QW width independent dEPL /dp in the nonpolar sample. It shows that for GaN/Al0.30 Ga0.70 N, the quantum confinement remains practically independent of the applied hydrostatic pressure. This result reveals that in the polar sample, the variation in dEPL /dp with the QW width is due to the pressure-induced increase in the built-in electric field Fint . Thus, a more quantitative analysis of the latter effect becomes justified. We found that the Fint increases with pressure with a rate of about 80 kV(cm GPa)-1 . [ABSTRACT FROM AUTHOR]- Published
- 2009
- Full Text
- View/download PDF
48. Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy.
- Author
-
Corfdir, P., Lefebvre, P., Levrat, J., Dussaigne, A., Ganière, J.-D., Martin, D, Ristic, J., Zhu, T., Grandjean, N., and Deveaud-Plédran, B.
- Subjects
EXCITON theory ,HYDRIDES ,GALLIUM nitride ,EPITAXY ,LUMINESCENCE ,CATHODOLUMINESCENCE ,PHOTOLUMINESCENCE - Abstract
We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonly encountered extended defect of a-plane GaN: I
1 basal stacking fault. Cathodoluminescence measurements show that these stacking faults are essentially located in the windows and the N-face wings of the ELO-GaN and that they can appear isolated as well as organized into bundles. Time-integrated and time-resolved photoluminescence, supported by a qualitative model, evidence not only the efficient trapping of free excitons (FXs) by basal plane stacking faults but also some localization inside I1 stacking faults themselves. Measurements at room temperature show that FXs recombine efficiently with rather long luminescence decay times (360 ps), comparable to those encountered in high-quality GaN epilayers. We discuss the possible role of I1 stacking faults in the overall recombination mechanism of excitons. [ABSTRACT FROM AUTHOR]- Published
- 2009
- Full Text
- View/download PDF
49. High doping level in Mg-doped GaN layers grown at low temperature.
- Author
-
Dussaigne, A., Damilano, B., Brault, J., Massies, J., Feltin, E., and Grandjean, N.
- Subjects
- *
MOLECULAR beam epitaxy , *CRYSTAL growth , *MOLECULAR dynamics , *LIGHT emitting diodes , *QUANTUM wells , *LOW temperatures , *EPITAXY , *NITROGEN compounds - Abstract
We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p-type GaN growth conditions. It is shown that the electrical characteristics strongly depend on the Mg flux and the growth temperature. As a result, the junction characteristics have been drastically improved and state of the art MBE-grown p-type layers have been obtained: the hole concentration, the mobility, and the resistivity are 1×1018 cm-3, 9 cm2/V s, and 0.75 Ω cm, respectively. These characteristics lead to an increase of the homojunction light emitting diode (LED) optical output power by two orders of magnitude. To further assess the quality of these MBE-grown p-type layers, we have prepared a hybrid LED which consists of an InGaN/GaN quantum well active structure grown by metal organic vapor phase epitaxy followed by a p-type region grown by MBE. An optical power in the milliwatt range at 20 mA is demonstrated confirming thereby the quality of low temperature MBE-grown p-type layers. [ABSTRACT FROM AUTHOR]
- Published
- 2008
- Full Text
- View/download PDF
50. Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.
- Author
-
Kalliakos, S., Bretagnon, T., Lefebvre, P., Taliercio, T., Gil, B., Grandjean, N., Damilano, B., Dussaigne, A., and Massies, J.
- Subjects
PHOTOLUMINESCENCE ,GALLIUM nitride ,QUANTUM dots ,SEMICONDUCTORS ,ELECTRIC fields ,FIELD theory (Physics) - Abstract
We analyze the room temperature photoluminescence properties of several multilayer stackings of GaN/AlN quantum dots. We report drastic differences of emission energies and linewidths between continuous wave and time-resolved photoluminescence experiments. In continuous wave experiments, the screening of internal electric fields by accumulation of e-h pairs in quantum dot planes induces a blue-shift as well as an unexpected narrowing of the emission line, when the laser intensity is increased. Under intense, pulsed excitation, in time-resolved photoluminescence, a substantial blue-shift is induced, due to the partial cancelation of the quantum confined Stark effect. When the system is again free to relax, we observe a time-dependent red-shift of the line, which maintains a fairly constant width. We attribute the observed behavior of energies and linewidths to the intricate contributions of the in-plane distribution of dot sizes and of the depth-dependent decrease of the degree of excitation of the different planes. We support our interpretations by the use of a model based on a self-consistent solution of the Schrödinger and Poisson equations within the envelope function approximation. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2004
- Full Text
- View/download PDF
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