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105 results on '"Dusseau, Laurent"'

1. The CELESTA CubeSat In-Flight Radiation Measurements and their Comparison with Ground Facilities Predictions

Author

Coronetti, Andrea, primary, Zimmaro, Alessandro, additional, Alía, Rubén García, additional, Danzeca, Salvatore, additional, Masi, Alessandro, additional, Slipukhin, Ivan, additional, Amodio, Alessio, additional, Dijks, Jasper, additional, Peronnard, Paul, additional, Secondo, Raffaello, additional, Brugger, Markus, additional, Chesta, Enrico, additional, Bernard, Muriel, additional, Dusseau, Laurent, additional, Allain, Tristan, additional, Duarte, Rafael Mendes, additional, Vaillé, Jean-Roch, additional, Saigné, Frédéric, additional, Boch, Jerome, additional, and Dilillo, Luigi, additional

Published
2024
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2. Monitoring of heparinization in cardiac surgery with ACT: accreditation of the point-of-care test in the Bordeaux University Hospital Centre

Author

Landrieu, Valentin, additional, Beauvieux, Marie Christine, additional, Vidal, Thomas, additional, Mouton, Christine, additional, Castaing-Mouhica, Gladys, additional, Dusseau, Laurent, additional, Stanciu, Eugen, additional, Domingorena, Julien, additional, Roux, David, additional, Catel, Julien, additional, Moreno, Valerie, additional, Berthon, Nathalie, additional, Bachellerie, Delphine, additional, Poisvert, Sandy, additional, and Delassasseigne, Céline, additional

Published
2023
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5. Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation

Author

Velo, Y. Gonzales, Boch, Jerome, Roche, Nicolas Jean-Henri, Perez, Stephanie, Vaille, Jean-Roch, Dusseau, Laurent, Saigne, frederic, Lorfevre, Eric, Schrimpf, Ronald D., Chatry, Christian, and Canals, Anna

Subjects
Radiation dosimetry -- Methods, Accelerated life testing -- Methods, Bipolar integrated circuits -- Testing, Semiconductor industry -- Research, Semiconductor industry, Business, Electronics, Electronics and electrical industries
Published
2010

6. The use of a dose-rate switching technique to characterize bipolar devices

Author

Boch, Jerome, Velo, Yago Gonzalez, Saigne, Frederic, Roche, Nicolas J.-H., Schrimpf, Ronald D., Vaille, Jean-Roch, Dusseau, Laurent, Chatry, Christian, Lorfevre, Eric, Ecoffet, Robert, and Touboul, Antoine D.

Subjects
Semiconductor chips -- Testing, BiCMOS -- Testing, Extraterrestrial radiation -- Control, Integrated circuits -- Testing, Standard IC, Business, Electronics, Electronics and electrical industries
Published
2009

7. Accelerated irradiation method to study synergy effects in bipolar integrated circuits

Author

Roche, Nicolas Jean-Henri, Velo, Yago Gonzalez, Dusseau, Laurent, Boch, Jereme, Vaille, Jean-Roch, Saigne, Frederic, Azais, Bruno, Auriel, Gerard, Lorfevre, Eric, Pouget, Vincent, Buchner, Stephen P., David, Jean-Pierre, Marec, Ronan, and Calvel, Philippe

Subjects
Integrated circuits -- Methods, Semiconductor chips -- Methods, Standard IC, Business, Electronics, Electronics and electrical industries
Published
2009

9. Feasibility of fibered monitoring system for pulsed dose-rate facilities based on radioluminescence of SrS:Ce,Sm phosphor

Author

Benoit, David, Vaille, Jean-Roch, Lautissier, Jerome, Matias-Vaille, Severine, Isturiz, Jose, Garcia, Pierre, Brichard, Benoit, and Dusseau, Laurent

Subjects
Emissions (Pollution) -- Environmental aspects, Electrons -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The possibility to monitor pulsed dose-rate facilities by means of real-time fibered dosimetry is investigated. A system based on the luminescence of the SrS:Ce,Sm is used to monitor pulses from a medical accelerator with four different dose-rates. The RL signal is characterized using a dedicated acquisition system. The RL recorded is linear with dose-rate and dose. The stem effect due to both Cerenkov emission and photoluminescence in the fiber was also investigated with 18 MV photons and 12 MeV electrons. Index Terms--Optical fiber, optically stimulated luminescence (OSL), radiation dosimetry, radioluminescence (RL), real-time dosimetry, stem effect.

Published
2008

10. The effects of low dose-rate ionizing radiation on the shapes of transients in the LM 124 operational amplifier

Author

Buchner, Stephen, McMorrow, Dale, Roche, Nicholas, Dusseau, Laurent, and Pease, Ron L.

Subjects
Transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Standard IC, Business, Electronics, Electronics and electrical industries
Abstract

Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs. Index Terms--Single event transients, total dose effects.

Published
2008

11. Origin of high total dose sensitivity on the OP400 bipolar operational amplifier

Author

Bernard, Muriel F., Dusseau, Laurent, Moindjie, Soilihi, and Bouchet, Thierry

Subjects
Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Bipolar transistors -- Analysis, Standard IC, Business, Electronics, Electronics and electrical industries
Abstract

The OP400 bipolar operational amplifier is widely used in space applications due to its performance and its low power consumption. However experimental results exhibit high total dose sensitivity. Circuit analysis is used to understand mechanisms at play and to find appropriate worst case test methods and solutions for design application. Index Terms--Bipolar transistor, integrated circuits (ICs), slew-rate, total dose.

Published
2008

12. Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits

Author

Dusseau, Laurent, Bernard, Muriel, Boch, Jerome, Velo, Yago Gonzalez, Roche, Nicolas, Lorfevre, Eric, Bezerra, Francoise, Calvel, Philippe, Marec, Ronan, and Saigne, Frederic

Subjects
Bipolar transistors -- Testing, Bipolar transistors -- Electric properties, Nuclear chemistry -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

It is shown that the variety of shapes of the input current versus dose curve observed in several ICs is due to circuit effects, depending on the architecture, the value of the currents and the bias conditions. When stages are cascaded, the degradation of the second stage may add or subtract current to the collector current of the input transistor. The variations of the collector currents can be evaluated using the variations of the supply current. It is then possible to model the compensation effects using basic equations and study the impact of irradiation conditions. In some cases, the effect of biasing the circuit during irradiation is to reduce the compensation mechanism leading to an stronger increase in the input current. When a peak shaped degradation curve is recorded, annealing may either induce an additional degradation or a recovery depending on which side of the peak irradiation has brought the circuit. Index Terms--Annealing, bipolar transistors, circuit effects, dose rate, integrated circuits (ICs), total dose.

Published
2008

13. Comparison between point defect generation by [gamma]-rays in bulk and fibre samples of high purity amorphous Si[O.sub.2]

Author

Brichard, Benoit, Agnello, Simonpietro, Nuccio, Laura, and Dusseau, Laurent

Subjects
Gamma rays -- Analysis, Silicon -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

We compare the E', H(I) and Si-ODC(II) contents in a low-OH high-purity a-Si[O.sub.2] both in bulk and fibre forms. The investigation includes the effects of hydrogen loading of the fibre. We found that the H(I) centre appears during irradiation and that its concentration tends to increase with the dose in fibers impregnated with molecular hydrogen. For the hydrogen-treated fibers, no experimental repeatability could be found in the measurements of E' and Si-ODC(II) although an acceptable agreement was still found in non-hydrogenated samples. This result suggests a possible complex reaction mechanisms under gamma radiation when the glass has a hydrogen excess. Index Terms--Fibre, gamma, hydrogen, point defects, silica.

Published
2008

14. Total dose effects on error rates in linear bipolar systems

Author

Buchner, Stephen, McMorrow, Dale, Bernard, Muriel, Roche, Nicolas, and Dusseau, Laurent

Subjects
Bipolar integrated circuits -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect the Single Event Transient (SET) system error rates in a radiation environment. If the transients are broadened by total ionizing dose (TID) exposure, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance. Index Terms--Bipolar circuit, error rate, single event transient, total dose.

Published
2008

15. Study of the thermal behavior of the OSL integrated sensor response

Author

Garcia, Pierre, Vaille, Jean-Roch, Benoit, David, Ravotti, Federico, Artola, Laurent, Sagnes, Bruno, Lorfevre, Eric, Bezerra, Francoise, and Dusseau, Laurent

Subjects
Dosimeters -- Evaluation, Luminescence -- Observations, Nuclear physics -- Equipment and supplies, Business, Electronics, Electronics and electrical industries
Abstract

Temperature irradiation is shown to cause the fading of the OSL signal. The temperature dependence is modeled using an Arrhenius law. A simple method is proposed to correct this effect a posteriori. Index Terms--Dosimetry, fading, optically stimulated luminescence (OSL), temperature.

Published
2007

16. Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Author

Buchner, Stephen, McMorrow, Dale, Bernard, Muriel, Roche, Nicholas, and Dusseau, Laurent

Subjects
Solid-State Physics
Abstract

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Published
2008

17. The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier

Author

Buchner, Stephen, McMorrow, Dale, Roche, Nicholas, Dusseau, Laurent, and Pease, Ron L

Subjects
Space Radiation
Abstract

Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.

Published
2008

18. Total Dose Effects on Error Rates in Linear Bipolar Systems

Author

Buchner, Stephen, McMorrow, Dale, Bernard, Muriel, Roche, Nicholas, and Dusseau, Laurent

Subjects
Electronics And Electrical Engineering
Abstract

The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect SET system error rates in a radiation environment. If the transients are broadened by TID, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.

Published
2007

19. NanoStar University Network: Hands-on higher Aerospace Education through Nanosatellite Student Challenges

Author

Merino, M., Garcia-Souto, Jose Antonio, Pradels, G., Daveran, Fabien, Ghiotto, Anthony, Kerherve, Eric, Escudier, B., Gateau, Thibault, Roche, Nicolas, Bernard, Muriel, Dusseau, Laurent, Fontán, Eugenio, Alonso, Gustavo, Guerman, Anna, Charrua-Santos, Fernando, Braga da Costa Campos, Luis, Pham, Jean Marie, Centre National d'Études Spatiales [Toulouse] (CNES), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Toulouse], and ONERA

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2018

20. Verification of Enhanced Low Dose Rate Sensitivity (ELDRS) Accelerated Test Method

Author

Poizat, Marc, Wind, Michael, Beck, Peter, Latocha, Marcin, Dusseau, Laurent, Boch, Jerome, Saigne, Frederic, and Zadeh, Ali

Abstract

Low dose rate testing was performed at AIT using the accelerated switching test method developed at Universite de Montpellier 2. Experiments were aiming at trying to validate the accelerated low dose rate test method for the selected parts., 形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: AA0061889037, レポート番号: JAXA-SP-12-008E

Published
2013

21. MTCube project: COTS memory SEE ground-test results and in-orbit error rate prediction

Author

Gupta, Viyas, Bosser, Alexandre Louis, Wrobel, Frédéric, Saigné, Frédéric, Dusseau, Laurent, Mohammadzadeh, Ali, Dilillo, Luigi, TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), Université de Montpellier (UM), Centre national d'études spatiales (CNES), and European Space Agency (ESA)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Radiation, Cube-satellite, Memories
Abstract

International audience; In this paper, the advancements related to the MTCube 1U CubeSat project are presented. The objectives of MTCube are:-to assess the in-orbit radiation sensitivity of various state-of-the-art memory devices;-to compare ground-level Radiation Test results with in-flight radiation data;-to develop and provide a technology test bed for novel memory devices.

Published
2016

22. Robusta 1B : First Feedback from in-flight telemetry on the power system

Author

Giamarchi, Frédéric, Gervois, Gerard, Vaillé, Jean-Roch, Julien, Christine, Dusseau, Laurent, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Génétique Physiologie et Systèmes d'Elevage (GenPhySE ), École nationale supérieure agronomique de Toulouse [ENSAT]-Institut National de la Recherche Agronomique (INRA)-Ecole Nationale Vétérinaire de Toulouse (ENVT), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, Centre Spatial Universitaire de Montpellier-Nîmes (CSU), and Université de Montpellier (UM)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

23. The CELESTA CubeSat Radiation Monitoring Mission

Author

Merlenghi, Anne-Sophie, Brugger, Markus, Chesta, Enrico, Danzeca, Salvatore, García Alía, Rubén, Masi, Alessandro, Peronnard, Paul, Secondo, Raffaello, Bernard, Muriel, Dusseau, Laurent, CERN [Genève], European Organization for Nuclear Research (CERN), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), Université de Montpellier (UM), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

24. Light solar panel design for CubeSats

Author

Muravyev, Vasily, Dusseau, Laurent, Balague, Melissa, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), and Université de Montpellier (UM)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

25. Seven VEGA maiden flight CubeSats lifetime duration and reentry analysis based on orbital parameters time evolution

Author

Bernard, Muriel, Dusseau, Laurent, Muravyev, Vasily, Jarrix, Sylvie, Dudeck, Michel, Andrieu, Charlotte, Gourdin, Anthony, Centre Spatial Universitaire de Montpellier-Nîmes (CSU), Université de Montpellier (UM), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut Jean le Rond d'Alembert (DALEMBERT), and Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2016

28. Presentation of the MTCube CubeSat Project

Author

Gupta, Viyas, Dilillo, Luigi, Wrobel, Frédéric, Mohammadzadeh, Ali, Tsiligiannis, Georgios, Bernard, Muriel, Dusseau, Laurent, TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Conception et Test de Systèmes MICroélectroniques (SysMIC), Radiations et composants (RADIAC), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), Université de Montpellier (UM), European Space Agency (ESA), and Centre National d'Etudes Spatiales (CNES)

Subjects
memories, radiation, [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], 3D memories, Cube-satellite
Abstract

International audience; In this paper, we will present the MTCube project, with a focus on the preliminary considerations regarding the payload which will consist in flying different types of state-of-the-art COTS (Commercial Off the Self) memories. The objective of the mission is to assess their sensitivity with respect to SEEs (Single Event Effects) in the space environment in order to compare ground based tests results with in-flight data.

Published
2014

29. Combined effects of CO60 Dose and High Frequency Interferences on a Discrete Bipolar Transistors

Author

Doridant, Adrien, Raoult, Jérémy, Jarrix, Sylvie, Amable, Blain, Chatry, Nathalie, Calvel, Philippe, Hoffmann, Patrick, Dusseau, Laurent, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Thales Alenia Space (TAS), THALES, Centre d'étude de Gramat (CEG), Délégation Générale pour l'Armement, Centre Spatial Universitaire de Montpellier-Nîmes (CSU), and Université de Montpellier (UM)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2012

30. Electromagnetic Susceptibility of low frequency bipolar transistors subject to the total ionizing dose effect

Author

Doridant, Adrien, Raoult, Jérémy, Blain, Amable, Jarrix, Sylvie, Dusseau, Laurent, Chatry, Nathalie, Hoffmann, Patrick, Calvel, Philippe, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), Université de Montpellier (UM), Centre d'étude de Gramat (CEG), Délégation Générale pour l'Armement, Thales Alenia Space (TAS), and THALES

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2011

31. Preliminary studies of the impact of dose radiation on the electromagnetic susceptibility of comparators

Author

Jarrix, Sylvie, Dusseau, Laurent, Doridant, Adrien, Dubois, Tristan, Amable, Blain, Raoult, Jérémy, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Raoult, Jérémy

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2010

33. Susceptibilité électromagnétique en champ proche de transistors bipolaires discrets : étape vers une méthode d'étude des effets combinés dose – compatibilité électromagnétique

Author

Doridant, Adrien, Amable, Blain, Raoult, Jérémy, Dusseau, Laurent, Jarrix, Sylvie, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2010

34. First In-flight Data Analysis of Displacement Damages on the OSL Sensor Onboard CARMEN-2

Author

Deneau, C., Vaillé, Jean-Roch, Dusseau, Laurent, Mekki, J., Garcia, P., Bezerra, D. Boscher, Lorfèvre, E., Ecoffet, R., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), European Organization for Nuclear Research (CERN), Centro de Astrofísica da Universidade do Porto (CAUP), Universidade do Porto, and Centre National d'Études Spatiales [Toulouse] (CNES)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2010

35. Enhanced-Low-Dose-Rate Sensitivity of Erbium Doped Silica Optical Fiber

Author

TROUSSELLIER, Laurent, Myara, Mikhaël, Dusseau, Laurent, Signoret, Philippe, Gilard, Olivier, Sotom, Michel, David, Jean-Pierre, Eric, Dauverchain, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Centre National d'Études Spatiales [Toulouse] (CNES), IRT Saint Exupéry - Institut de Recherche Technologique, Communication Langagière et Interaction Personne-Système (CLIPS - IMAG), and Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2008

36. Fibered Monitoring Device for Pulsed Dose-Rate Facilities Based on Radioluminescence of SrS:Ce, Sm Phosphor

Author

Benoit, David, Vaillé, Jean-Roch, Garcia, Pierre, Dusseau, Laurent, Lautissier, Jérôme, Isturiz, José, Brichard, Benoit, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Procédés, Matériaux et Energie Solaire (PROMES), Université de Perpignan Via Domitia (UPVD)-Centre National de la Recherche Scientifique (CNRS), Centre d'Etude de l'Energie Nucléaire (SCK-CEN), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2008

37. The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124Operational Amplifier

Author

Buchner, Stephen, McMorrow, Dale, Roche, Nicolas, Dusseau, Laurent, NASA Goddard Space Flight Center (GSFC), Naval Research Laboratory (NRL), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2008

38. Origin of High Total Dose Sensitivity on the OP400 Bipolar Operational Amplifier

Author

Bernard, Muriel, Bouchet, Thierry, Dusseau, Laurent, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ADIS Innovation, and ADIS

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2008

39. Dose rate effect on Aluminium- codoped Erbium Fibers

Author

Troussellier, Laurent, Chluda, Cédric, Myara, Mikhaël, Boch, Jérôme, Dusseau, Laurent, Signoret, Philippe, Gilard, Olivier, Sotom, Michel, David, Jean-Pierre, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Centre National d'Études Spatiales [Toulouse] (CNES), IRT Saint Exupéry - Institut de Recherche Technologique, Communication Langagière et Interaction Personne-Système (CLIPS - IMAG), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2007

40. Isochronous Annealing Experiment Applied To Erbium Doped Fiber For Spatial Application

Author

TROUSSELLIER, Laurent, CHLUDA, Cédric, Myara, Mikhaël, Dusseau, Laurent, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Radiations et composants (RADIAC)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2007

41. Erbium Doped Fiber Assessment and Selection for Optical Amplifiers in Radiative Environment

Author

TROUSSELLIER, Laurent, CHLUDA, Cédric, Myara, Mikhaël, Dusseau, Laurent, Signoret, Philippe, Gilard, Olivier, Sotom, Michel, David, Jean-Pierre, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), IRT Saint Exupéry - Institut de Recherche Technologique, Communication Langagière et Interaction Personne-Système (CLIPS - IMAG), and Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2006

43. Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors

Author

Gonzalez-Velo, Yago, primary, Boch, Jérôme, additional, Saigne, Frédéric, additional, Roche, Nicolas J.-H., additional, Perez, Stephanie, additional, Vaille, Jean-Roch, additional, Deneau, Christelle, additional, Dusseau, Laurent, additional, Lorfevre, Eric, additional, Schrimpf, Ronald D., additional, Chatry, Christian, additional, Legoulven, Enoal, additional, and Platteter, Dale G., additional

Published
2011
Full Text
View/download PDF

44. Study of Synergism Effect Between TID and ATREE on the Response of the LM124 Operational Amplifier

Author

Roche, Nicolas J.-H., primary, Perez, Stephanie, additional, Mekki, Julien, additional, Gonzalez Velo, Y., additional, Dusseau, Laurent, additional, Boch, Jérôme, additional, Vaille, Jean-Roch, additional, Saigne, Frédéric, additional, Marec, Ronan, additional, Calvel, Philippe, additional, Bezerra, Francoise, additional, Auriel, Gérard, additional, Azais, Bruno, additional, and Buchner, Stephen P., additional

Published
2011
Full Text
View/download PDF

45. Impact of Switched Dose-Rate Irradiation on the Response of the LM124 Operational Amplifier to Pulsed X-Rays

Author

Roche, Nicolas J.-H., primary, Dusseau, Laurent, additional, Mekki, Julien, additional, Perez, Stephanie, additional, Vaille, Jean-Roch, additional, Gonzalez Velo, Yago, additional, Boch, Jérome, additional, Saigne, Frédéric, additional, Marec, Ronan, additional, Calvel, Philippe, additional, Bezerra, Francoise, additional, Auriel, Gérard, additional, Azais, Bruno, additional, and Buchner, Stephen P., additional

Published
2011
Full Text
View/download PDF

47. Robusta : un satellite pédagogique

Author

Jarrix, Sylvie, primary, Gervois, Gérard, additional, Boch, Jérôme, additional, Vaillé, Jean-Roch, additional, Nouvel, Philippe, additional, Penarier, Annick, additional, and Dusseau, Laurent, additional

Published
2009
Full Text
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