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We investigate the phenomenon of transition to synchronization in Sakaguchi-Kuramoto model in the presence of higher-order interactions and global order parameter adaptation. The investigation is done by performing extensive numerical simulations and low dimensional modeling of the system. Numerical simulations of the full system show both continuous (second order) as well as discontinuous transitions. The discontinuous transitions can either be associated with explosive (first order) or with tiered synchronization states depending on the choice of parameters. To develop an in depth understanding of the transition scenario in the parameter space we derive a reduced order model (ROM) using the Ott-Antonsen ansatz, the results of which closely matches with that of the numerical simulations of the full system. The simplicity and analytical accessibility of the ROM helps to conveniently unfold the transition scenario in the system having complex dependence on the parameters. Simultaneous analysis of the full system and the ROM clearly identifies the regions of the parameter space exhibiting different types of transitions. It is observed that the second order continuous transition is connected with a supercritical pitchfork bifurcation (PB) of the ROM. On the other hand, the discontinuous teired transition is associated with multiple saddle-node (SN) bifurcations along with a supercritical PB and the first order explosive transition involves a subcritical PB alongside a SN bifurcation., Comment: 11 pages, 11 figures

The study of first order transition (explosive synchronization) in an ensemble (network) of coupled oscillators has been the topic of paramount interest among the researchers for more than onedecade. Several frameworks have been proposed to induce explosive synchronization in a network and it has been reported that phase frustration in a network usually suppresses first order transition in the presence of pairwise interactions among the oscillators. However, on the contrary, by considering networks of phase frustrated coupled oscillators in the presence of higher order interactions (upto 2-simplexes) we show here under certain conditions, phase frustration can promote explosive synchronization in a network. A reduced order model of the network in the thermodynamic limit is derived using the Ott-Antonsen ansatz to explain this surprising result. Analytical treatment of the reduced order model including bifurcation analysis explains the apparent counter intuitive result quite clearly., Comment: 8 pages, 4 figures

We propose a framework for achieving perfect synchronization in complex networks of Sakaguchi-Kuramoto oscillators in presence of higher order interactions (simplicial complexes) at a targeted point in the parameter space. It is achieved by using an analytically derived frequency set from the governing equations. The frequency set not only provides stable perfect synchronization in the network at a desired point, but also proves to be very effective in achieving high level of synchronization around it compared to the choice of any other frequency sets (Uniform, Normal etc.). The proposed framework has been verified using scale-free, random and small world networks. In all the cases, stable perfect synchronization is achieved at a targeted point for wide ranges of the coupling parameters and phase-frustration. Both first and second order transitions to synchronizations are observed in the system depending on the type of the network and phase frustration. The stability of perfect synchronization state is checked using the low dimensional reduction approach. The robustness of the perfect synchronization state obtained in the system using the derived frequency set is checked by introducing a Gaussian noise around it., Comment: 9 figures

Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$/$Hf_{0.5}Zr_{0.5}O_{2}$/$La_{0.67}Sr_{0.33}MnO_{3}$ ferroelectric capacitors is investigated, via the sensitivity offered by nanobeam X-ray diffraction experiments during application of electrical bias. It is shown that the pristine rhombohedral phase exhibits a negative linear piezoelectric effect with piezoelectric coefficient ($d_{33}$) ~ -0.5 to -0.8 pm$V^{-1}$. First-principles calculations support an intrinsic negative piezoresponse. In addition, it is found that the piezoelectric response is suppressed above the coercive voltage. For higher voltages, and with the onset of DC conductivity throughout the capacitor, a second-order effect is observed. The electromechanical response observed in this work is clearly different from that of normal ferroelectrics, again underlining the unconventional nature of polarization switching in the samples.

Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material., Comment: 11 pages, 9 figures

Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance field-effect transistors. The origin of this FE state remains a mystery, though, as none of the proposed mechanisms for its stabilization -- from surface and size effects to formation kinetics -- is fully convincing. Interestingly, it is known that doping HfO2 with various cations favors the occurrence of the FE polymorph; however, existing first-principles works suggest that doping by itself is not sufficient to stabilize the polar phase over the usual non-polar monoclinic ground state. Here we use first-principles methods to reexamine this question. We consider two representative isovalent substitutional dopants, Si and Zr, and study their preferred arrangement within the HfO2 lattice. Our results reveal that small atoms like Si can adopt very stable configurations (forming layers within specific crystallographic planes) in the FE orthorhombic phase of HfO2, but comparatively less so in the non-polar monoclinic one. Further, we find that, at low concentrations, such a dopant ordering yields a FE ground state, the usual paraelectric phase becoming a higher-energy metastable polymorph. We discuss the implications of our findings, which constitute a definite step forward towards understanding ferroelectricity in HfO2., Comment: 6 pages, 4 figures