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Millisecond Flash anneal (MFLA) is demonstrated on a matured DRAM product for gate-induced drain leakage (GIDL) improvement, while examining the device impact and junction defects. Bright field and weak-beam dark-field TEM images has showed perfect dislocation loops and fault dislocation loops staying in the {113} plane and these defects might be the one of the leakage sources for a defect-assisted trap charge, leading to trap-assisted tunneling.

A band-offset-based unified-RAM (URAM) cell fabricated on a Si/[Si.sub.1-y][C.sub.y] substrate is used for the fusion of a nonvolatile memory (NVM) and a capacitorless 1T-DRAM. The band-engineered URAM has yielded a cost-effective process that is compatible with a conventional body-tied FinFET SONOS and the URAM has shown highly reliable NVM and high-speed 1T-DRAM operations in a single memory cell.

We describe proton induced bulk damage observed in 90 nm process SDRAM. The degradation of the data retention ability was evaluated. The effect due to the difference of process technology and memory cell structure was discussed. The result indicates that the value of the capacitance of the storage capacitor and the volume of the depletion region are key parameters concerning the failures caused by bulk damage. Index Terms--Bulk damage, 90 nm, protons, retention time, SDRAM.

The burn-in (BI) mechanism in connection with the dynamic operation stress (DOS) is investigated to examine the real impact on dynamic random access memory (DRAM) reliability. The findings show that retention time degradation by BI stress in DRAM with potentially lethal defects is mainly attributed to DOS-induced hot carrier (HC) degradation of DRAM cell.

We present ground test and space flight data describing a single event anomaly that affects multiple bytes in a stacked DRAM module. A 12 Gbit solid state recorder containing 1,440 DRAM die experiences the anomalous events at a rate requiring testing of a large sample set of these modules.