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Presents information on a study which measured the dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants in silicon. Experimental details; Results and discussion.

Presents a study that investigated extended defects induced in silicon by high energy implantation. Analysis of defects by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements; Effects of preexisting impurities, implantation dose and annealing conditions on the formation and density of the dislocations; Background on high energy ion implantation into silicon.

Presents information on a study that reviewed low-temperature molecular-beam epitaxy (MBE) in semiconductors, with a focus on limited thickness epitaxy (LTE). Basic models for LTE; Description on hydrogen and other impurity segregation models; Discussion and conclusions.

Presents a study which investigated the effect of hydrogen on silicon molecular beam epitaxy. Impact of hydrogen on the epitaxial thickness of silicon; Discussion on limited-thickness epitaxy; Effect of background hydrogen adsorption on previous experiments on silicon steps.

Presents a demonstration of Si/NiSi[sub2]/Si(100) structures by a combination of molecular-beam epitaxy (MBE) and high-temperature annealing. Evolution of the interface morphology of the double-heteroepitaxial structures in terms of thermodynamics; Description of a silicon template technique for ensuring the epitaxial orientation of the silicon overlayer; Effect of the silicon template on the quality of MBE-grown silicon in NiSi[sub2].

Presents a study which examined the structural faults and domain boundaries in congruent lithium niobate using a transmission electron microscope. Discussion on the development of optical-wave-guide devices; Experimental details; Analysis of the extended defects of titanium-diffused congruent lithium niobate.

Investigates the energetics of the CoSi[sub2]-Si interface and the CoSi[sub2] surface, through the analysis of the equilibrium shapes of isolated silicide precipitates. Factors that cause the limited applications of CoSi[sub2] films; Functions of interfacial and surface energetics; Steps in the growth process of CoSi[sub2] films.

Presents a study which investigated the use of a low oxidation state titanium compound as a potential source for TiN and titanium in plasma enhanced chemical vapor deposition processes. Features of the films; Description of effective diffusion barriers between aluminum and silicon; Use of TiN; Motive for the deposition of a thin film of titanium prior to the TiN.

Presents a study which examined the implantation of MeV erbium ions into micron-thick silica and phosphosilicate glass films and silicon nitride films with the aim of incorporating the rare-earth dopant on an optically active site in the network. Photoluminescence spectrum showed in implanted films; Range of fluorescence lifetime for the silica-based glasses; Annealing characteristics of the materials.

Presents information on a study which defined the processing parameters which will optimize the photoluminescence intensity of erbium implanted in silicon. Methods; Results; Discussion.

Presents information on a study which examined the electrical and defect properties of ion-implanted erbium in silicon. Methods; Results; Discussion.

Investigates cause of surface roughening during low temperature using reflection high energy electron diffraction (RHEED). Experimental procedures; Comparison of RHEED and transmission electron microscopy (TEM) analysis; Effect of temperature on roughening rate; Factors which affect size and shape of RHEED diffraction features.

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. © 1997 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5 × 10[sup 12] to 1 &times 10[sup 14]/cm² evolves into a distribution of {311} interstitial agglomerates during the initial annealing stages at 670815 °C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess interstitials drive substitutional B into electrically inactive, metastable clusters of presumably two or three B atoms at concentrations below the solid solubility, thus explaining the generally observed immobile B peak during TED of ion-implanted B. Injected interstitials undergo retarded diffusion in the MBE-grown Si with an effective migration energy of ∼3.5 eV, which arises from trapping at substitutional C. The concept of trap-limited diffusion provides a stepping stone for understanding the enormous disparity among published values for the interstitial diffusivity in Si. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ∼10[sup 19]/cm³ prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation. The present insights have been implemented into a process simulator, allowing fo... [ABSTRACT FROM AUTHOR]

Provides information on a study which investigated the gettering mechanisms of iron in silicon. Details of gettering layers into iron-contaminated silicon wafers by means of high-energy ion implantation; Methodology of the study; Results and discussion.

Examines interfacial defects and the mechanisms of growth twinning in epitaxial growth of silicides. Techniques used to examine the samples; Evidences needed for the identification of the coreless defect as a microtwin; Factors influencing twin-related defects in silicide thin films; Morphology of the defects.