34 results on '"Ebrish, Mona"'
Search Results
2. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
3. Process Optimization for Selective Area Doping of GaN by Ion Implantation
4. Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
5. Capacitive Sensing of Intercalated H2O Molecules Using Graphene
6. Study of anode doping and avalanche in foundry compatible 1.2kV vertical GaN PiN diodes
7. Graphene-based quantum capacitance wireless vapor sensors
8. (Invited) Optical Characterization of Bulk GaN Substrates and Homoepitaxial Films
9. A Simple Edge Termination Design for Vertical GaN P-N Diodes
10. Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
11. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
12. Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination
13. Characterization and Modeling of a 1.3 kV Vertical GaN Diode
14. 12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
15. Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes
16. (Invited) Understanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs
17. (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics
18. Using Long Range Optical Techniques to Predict Vertical GaN Diode Performance.
19. Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
20. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
21. High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications
22. (Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices
23. A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes
24. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
25. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates.
26. Simulation of 3D Doping by Plasma Immersion Ion Implantation for FinFET or deep Trench Doping Applications. Effect of main Process Parameters and Study of Wall Doping Non-Uniformity as Function of Form Factor and Device Scaling
27. Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes
28. Capacitive Sensing of Intercalated H2O Molecules Using Graphene
29. Effect of Noncovalent Basal Plane Functionalization on the Quantum Capacitance in Graphene
30. All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate
31. Graphene-Based Quantum Capacitance Wireless Vapor Sensors
32. SnSe2 field-effect transistors with high drive current
33. Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics
34. Graphene Quantum Capacitance Varactors
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.