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Collective spin excitations in magnetically ordered crystals, called magnons or spin waves, can serve as carriers in novel spintronic devices with ultralow energy consumption. The generation of well-detectable spin flows requires long lifetimes of high-frequency magnons. In general, the lifetime of spin waves in a metal is substantially reduced due to a strong coupling of magnons to the Stoner continuum. This makes metals unattractive for use as components for magnonic devices. Here, we present the metallic antiferromagnet CeCo2P2, which exhibits long-living magnons even in the terahertz (THz) regime. For CeCo2P2, our first-principle calculations predict a suppression of low-energy spin-flip Stoner excitations, which is verified by resonant inelastic X-ray scattering measurements. By comparison to the isostructural compound LaCo2P2, we show how small structural changes can dramatically alter the electronic structure around the Fermi level leading to the classical picture of the strongly damped magnons intrinsic to metallic systems. Our results not only demonstrate that long-lived magnons in the THz regime can exist in bulk metallic systems, but they also open a path for an efficient search for metallic magnetic systems in which undamped THz magnons can be excited.

Electron–phonon interaction in a single-layer Tl–Pb compound on Si(111) is investigated within the density-functional theory and linear-response approach in the mixed-basis pseudopotential representation. It is found that phonon-induced scattering of electrons at the Fermi level is primarily determined by surface electronic states responsible for bonding at the interface and by low-energy, predominantly shear-vertical vibrations of adatoms. The contribution of substrate-localized vibrations involved in the electron–phonon scattering turns out to be small. We have also estimated the superconducting transition temperature Tc by solving the linearized gap equation of the Eliashberg theory. An analysis of phonon-mediated transitions for a number of electronic states in the Tl–Pb surface bands showed that the strength of the coupling varies with the binding energy, increasing as it approaches the Fermi level, and significantly depends on the surface band to which the state belongs.

We examine the photoemission cross sections and Wigner time delays from MoS2 core-level orbitals Mo4s, Mo4p, S3s. We employ a cluster approach and study the photoemission process for progressively larger model clusters, in order to assess the scattering effects by neighboring atoms. First we explore how the fully differential cross section (FDCS) from the localized orbitals evolves as we increase the cluster size. In order to establish the underlying scattering mechanics that are mapped into the FDCS and Wigner time delays, we jointly analyze them in terms of the polar emission angle and photoemission energy for fixed azimuthal angles. The Wigner-time-delay scale goes from a few tens up into the hundreds of attoseconds when increasingly large clusters are considered, indicating the presence of high order scattering processes and interference. We find that, for the largest clusters, some internal propagation pathways start taking shape, which in an infinite system would amount to band structure positive energy states. We conclude that second- or higher-order neighbors around the main emitter strongly affect the photoelectron propagation and yield, therefore supporting their importance for models that aim for quantitative descriptions.

Methods of attosecond science originally developed to investigate systems in the gas phase are currently being adapted to obtain temporal information on the electron dynamics that takes place in condensed-matter systems. In particular, streaking measurements have recently been performed to determine photoemission time delays from the WSe2 dichalcogenide. In this work we present a fully atomistic description of the photoemission process in WSe2 and provide angularly resolved photoemission cross sections and time delays from the W 4f, Se 3d and Se 4s core states of the system. Since these states are spatially localized, we propose a cluster approach in which we build up from smaller to larger clusters, so that we can assess the importance of scattering effects by each new layer of neighboring atoms. We use a static-exchange density functional theory method with B-spline functions, where a one-center angular-momentum expansion is supplemented by off-center expansions with fewer partial waves. This enhances convergence in comparison with a one-center expansion, which would require very high angular momenta to characterize the localized fast oscillations near each off-center atomic core. We find that the photoemission delays and fully differential cross sections are strongly affected by scattering events that take place off the neighboring atoms, implying the need to consider their effects for quantitative descriptions of the photoemission process.

Using density functional theory, we propose the (MnSb2Te4)·(Sb2Te3)n family of stoichiometric van der Waals compounds that harbor multiple topologically nontrivial magnetic phases. In the ground state, the first three members of the family (n = 0, 1, 2) are 3D antiferromagnetic topological insulators, while for n ≥ 3 a special phase is formed, in which a nontrivial topological order coexists with a partial magnetic disorder in the system of the decoupled 2D ferromagnets, whose magnetizations point randomly along the third direction. Furthermore, due to a weak interlayer exchange coupling, these materials can be field-driven into the FM Weyl semimetal (n = 0) or FM axion insulator states (n ≥ 1). Finally, in two dimensions, we reveal these systems to show intrinsic quantum anomalous Hall and AFM axion insulator states, as well as quantum Hall state, achieved under external magnetic field. Our results demonstrate that MnSb2Te4 is not topologically trivial as was previously believed that opens possibilities of realization of a wealth of topologically nontrivial states in the (MnSb2Te4)·(Sb2Te3)n family.

Closed-shell atoms scattered from a metal surface exchange energy and momentum with surface phonons mostly via the interposed surface valence electrons, i.e., via the creation of virtual electron-hole pairs. The latter can then decay into surface phonons via electron-phonon interaction, as well as into acoustic surface plasmons (ASPs). While the first channel is the basis of the current inelastic atom scattering (IAS) surface-phonon spectroscopy, no attempt to observe ASPs with IAS has been made so far. In this study we provide evidence of ASP in Ni(111) with both Ne atom scattering and He atom scattering. While the former measurements confirm and extend so far unexplained data, the latter illustrate the coupling of ASP with phonons inside the surface-projected phonon continuum, leading to a substantial reduction of the ASP velocity and possibly to avoided crossing with the optical surface phonon branches. The analysis is substantiated by a self-consistent calculation of the surface response function to atom collisions and of the first-principle surface-phonon dynamics of Ni(111). It is shown that in Ni(111) ASP originate from the majority-spin Shockley surface state and are therefore collective oscillation of surface electrons with the same spin, i.e. it represents a new kind of collective quasiparticle: a Spin Acoustic Surface Plasmon (SASP).

Feasibility of many emergent phenomena that intrinsic magnetic topological insulators (TIs) may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi2Te4)(Bi2Te3)m with m = 0, ⋯, 6. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the m value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m = 0) to MnBi4Te7 (m = 1) and MnBi6Te10 (m = 2). Further increase in m leads to change of the overall magnetic behavior to ferromagnetic (FM) one for (m = 3), while the interlayer coupling almost disappears. In this way, the AFM and FM TI states are, respectively, realized in the m = 0, 1, 2 and m = 3 cases. For large m numbers a hitherto-unknown topologically nontrivial phase can be created, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the MnBi2Te4 building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi2Te4)(Bi2Te3)m allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.

The spectrum of electromagnetic collective excitations in Dirac semimetals placed in a quantizing magnetic field is considered. We have found the Landau damping regions using the energy and momentum conservation law for allowed transitions between one-particle states of electron excitations. Analysis of dispersion equations for longitudinal and transverse waves near the window boundaries in the Landau damping regions reveals different types of collective excitations. We also indicate the features of universal broadening of cyclotron absorption for a magnetic field variation in systems with linear dispersion of the electron spectrum. The use of the obtained spectrum also allows us to predict a number of oscillation and resonance effects in the field of magneto-optical phenomena.

Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.

The surface excitation spectra of the B-terminated and Mg-terminated MgB(0001) surfaces are studied in the ab initio time-dependent density functional theory approach. The band structure of both these surfaces is fully included into evaluation of the surface response function using a linear response approach. We find that different surface electronic structures for these surface terminations result in very different surface collective electronic excitations. Due to a number of surface states and peculiarity of the MgB dielectric properties several surface plasmons, such as surface plasmon, interband surface plasmon, acoustic surface plasmon, and others have been found. We trace their evolution with momentum transfer change on both surfaces. Whereas at vanishing momentum transfers the plasmons in both systems can be understood considering the bulk MgB dielectric function, upon momentum increase the collective excitations present very different behavior. We relay such behavior to the differences in the surface electronic structure of the studied terminations.

The effect of spin-orbit coupling on the electron-phonon interaction in a (4/3)-monolayer of Pb on Si(111) is investigated within the density-functional theory and linear-response approach in the mixed-basis pseudopotential representation. We show that the spin-orbit interaction produces a large weakening of the electron-phonon coupling strength, which appears to be strongly overestimated in the scalar relativistic calculations. The effect of spin-orbit interaction is largely determined by the induced modification of Pb electronic bands and a stiffening of the low-energy part of phonon spectrum, which favor a weakening of the electron-phonon coupling strength. The state-dependent strength of the electron-phonon interaction in occupied Pb electronic bands varies depending on binding energy rather than electronic momentum. It is markedly larger than the value averaged over electron momentum because substrate electronic bands make a small contribution to the phonon-mediated scattering and agrees well with the experimental data.

The surface phonon dispersion curves of ultrathin (3–6 ML) Pb layers grown on Si(111) and Ge(111) substrates, measured with inelastic He atom scattering, reveal shallow Kohn anomalies in the surface acoustic branches. Ab-initio calculations based on density functional perturbation theory for the 3–6 monolayers of Pb on a rigid substrate, besides reproducing well the observed dispersion curves, allow for the assignment of the anomalies to well defined flat segments of the Fermi contours. Unlike Pb films grown on Cu(111), where both the optical surface and the interface phonon branches above the bulk frequency maximum are observed, for Si(111) and Ge (111) only the surface-localized branch is observed, indicating the comparatively weaker film-substrate interaction. Consistently with the observation of superconductivity in ultrathin Pb films on Si(111) down to one monolayer (wetting layer), the mass-enhancement factor derived from the specular scattering intensity dependence on the film thickness is found for both substrates in the range of unity, however with slightly larger values for the Ge(111) substrate.

Surface electronic spectra, surface and bulk properties as well as the underlying chemical bonding characteristics in topological insulators with complex bonding patterns are considered for the example of cubic, polar intermetallics KNaBi, KBi and RbBi (with the general formula ABi, A-alkali metal). Chemical bonding in ABi has a delocalized, polar character as elucidated by the Bader charge analysis in bulk and at the surface, by real-space bonding indicators and by the maximally localized-Wannier-function technique. We underpin emergent surface features in the electronic spectra that are driven by chemical bonding. The organization of these trivial and topological surface states is juxtaposed with the trends in the Bader charges at the surface and surface contributions to the on-site matrix elements of the ab initio Hamiltonian in the localized basis. The surface states are essentially affected by a large positive or negative on-site contribution induced near the vacuum boundary, where the sign of the contribution depends on the surface termination. Based on our findings, the experimentally observed surface features in the related NaBi compound can be correctly interpreted. The listed aspects distinguish the title compounds from the HgX (X-chalcogen) series with the same fingerprint bulk-band dispersion near the Fermi level and similar symmetries, but with covalent bonding character. Surface effects investigated for ABi also can be expected for a wide range of compounds of various topological classes with a similar bonding type, and will define their surface reactivity.

Thin topological insulator (TI) films support optical and acoustic plasmonic modes characterized by effective net charge or net spin density, respectively. We combine many-body and electromagnetic calculations to study how these modes can be selectively excited at films and nanodisks at infrared and THz frequencies. We first discuss the excitation of propagating plasmons in a thin film by a point dipolar source. We emphasize how changing the distance between the dipolar source and the film allows us to control the relative strength of the acoustic and optical plasmons and thus to excite net-spin or net-charge waves on demand. The acoustic and optical modes in a nanodisk structure can be efficiently tuned by changing the size of the disk or by applying electrostatic gating. Furthermore, these modes can be confined to regions of dimensions much smaller than the wavelength. The control of the excitation of acoustic and optical modes indicates that thin topological insulators are a promising system to manipulate the spin and charge properties of the plasmonic response, with potential applications in fast, compact, and electrically-controlled spintronic devices.

We report an ab initio study of the effect of pressure on vibrational and electronic properties of K3Bi and Rb3Bi in the cubic Fm3m structure. It is shown that the high-temperature cubic phase of K3Bi and Rb3Bi is dynamically unstable at T=0 but can be stabilized by pressure. The electronic spectra of alkali bismuthides are found to possess the bulk band touching at the Brillouin zone center and an inverted spin-orbit bulk band structure. Upon hydrostatic compression the compounds transform from the topologically nontrivial semimetal (K3Bi)/metal (Rb3Bi) into a trivial semiconductor (metal) with a conical Dirac-type dispersion of electronic bands at the point of the topological transition. In K3Bi the dynamical stabilization occurs before the system undergoes the topological phase transition.

The electronic structure of the Pt/Au(111) heterostructures with a number of Pt monolayers n ranging from one to three is studied in the density-functional-theory framework. The calculations demonstrate that the deposition of the Pt atomic thin films on gold substrate results in strong modifications of the electronic structure at the surface. In particular, the Au(111) s-p-type Shockley surface state becomes completely unoccupied at deposition of any number of Pt monolayers. The Pt adlayer generates numerous quantum-well states in various energy gaps of Au(111) with strong spatial confinement at the surface. As a result, strong enhancement in the local density of state at the surface Pt atomic layer in comparison with clean Pt surface is obtained. The excess in the density of states has maximal magnitude in the case of one monolayer Pt adlayer and gradually reduces with increasing number of Pt atomic layers. The spin-orbit coupling produces strong modification of the energy dispersion of the electronic states generated by the Pt adlayer and gives rise to certain quantum states with a characteristic Dirac-cone shape.

The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break-through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that quantum spin Hall insulators can be realized in ultra-thin films constructed from a trivial band insulator with strong spin-orbit coupling. The thinnest film with an inverted gap large enough for practical applications is a centrosymmetric sextuple layer built out of two inversely stacked non-centrosymmetric BiTeI trilayers. This nontrivial sextuple layer turns out to be the structure element of an artificially designed strong three-dimensional topological insulator Bi 2 Te 2 I 2. We reveal general principles of how a topological insulator can be composed from the structure elements of the BiTeX family (X = I, Br, Cl), which opens new perspectives towards engineering of topological phases.

Attosecond time-resolved photoemission spectroscopy reveals that photoemission from solids is not yet fully understood. The relative emission delays between four photoemission channels measured for the van der Waals crystal tungsten diselenide (WSe) can only be explained by accounting for both propagation and intra-atomic delays. The intra-atomic delay depends on the angular momentum of the initial localized state and is determined by intra-atomic interactions. For the studied case of WSe, the photoemission events are time ordered with rising initial-state angular momentum. Including intra-atomic electron-electron interaction and angular momentum of the initial localized state yields excellent agreement between theory and experiment. This has required a revision of existing models for solid-state photoemission, and thus, attosecond time-resolved photoemission from solids provides important benchmarks for improved future photoemission models.

An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.

An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Presented in this talk is a novel material platform with unique combination of properties that is perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the topological insulator. Following this proposal, we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap. A recent experimental realization of such a design is also described in the talk.

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.