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17 results on '"Eiden, Anna"'

1. On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

Author

Goykhman, Ilya, Sassi, Ugo, Desiatov, Boris, Mazurski, Noa, Milana, Silvia, de Fazio, Domenico, Eiden, Anna, Khurgin, Jacob, Shappir, Joseph, Levy, Uriel, and Ferrari, Andrea C.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.

Published
2015
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2. Controlling Sub-nm Gaps in Plasmonic Dimers using Graphene

Author

Mertens, Jan, Eiden, Anna L., Sigle, Daniel O., Lombardo, Antonio, Sun, Zhipei, Sundaram, Ravi S., Colli, Alan, Tserkezis, Christos, Aizpurua, Javier, Milana, Silvia, Ferrari, Andrea C., and Baumberg, Jeremy J.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Graphene is used as the thinnest possible spacer between gold nanoparticles and a gold substrate. This creates a robust, repeatable, and stable sub-nanometre gap for massive plasmonic field enhancements. White light spectroscopy of single 80 nm gold nanoparticles reveals plasmonic coupling between the particle and its image within the gold substrate. While for a single graphene layer, spectral doublets from coupled dimer modes are observed shifted into the near infra-red, these disappear for increasing numbers of layers. These doublets arise from plasmonic charge transfer, allowing the direct optical measurement of out-of-plane conductivity in such layered systems. Gating the graphene can thus directly produce plasmon tuning., Comment: 4 figures

Published
2013
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9. High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors

Author

De Fazio, Domenico, primary, Goykhman, Ilya, additional, Yoon, Duhee, additional, Bruna, Matteo, additional, Eiden, Anna, additional, Milana, Silvia, additional, Sassi, Ugo, additional, Barbone, Matteo, additional, Dumcenco, Dumitru, additional, Marinov, Kolyo, additional, Kis, Andras, additional, and Ferrari, Andrea C., additional

Published
2016
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12. Unfolding the contents of sub-nm plasmonic gaps using normalising plasmon resonance spectroscopy

Author

de Nijs, Bart, primary, Bowman, Richard W., additional, Herrmann, Lars O., additional, Benz, Felix, additional, Barrow, Steve J., additional, Mertens, Jan, additional, Sigle, Daniel O., additional, Chikkaraddy, Rohit, additional, Eiden, Anna, additional, Ferrari, Andrea, additional, Scherman, Oren A., additional, and Baumberg, Jeremy J., additional

Published
2015
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13. Controlling Subnanometer Gaps in Plasmonic Dimers Using Graphene

Author

Mertens, Jan, primary, Eiden, Anna L., additional, Sigle, Daniel O., additional, Huang, Fumin, additional, Lombardo, Antonio, additional, Sun, Zhipei, additional, Sundaram, Ravi S., additional, Colli, Alan, additional, Tserkezis, Christos, additional, Aizpurua, Javier, additional, Milana, Silvia, additional, Ferrari, Andrea C., additional, and Baumberg, Jeremy J., additional

Published
2013
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15. High Responsivity, Large-Area Graphene/MoS2Flexible Photodetectors

Author

De Fazio, Domenico, Goykhman, Ilya, Yoon, Duhee, Bruna, Matteo, Eiden, Anna, Milana, Silvia, Sassi, Ugo, Barbone, Matteo, Dumcenco, Dumitru, Marinov, Kolyo, Kis, Andras, and Ferrari, Andrea C.

Abstract

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642 nm. This is at least 2 orders of magnitude higher than bulk-semiconductor flexible membranes. The photoconductive gain is up to 4 × 105. The photocurrent is in the 0.1–100 μA range. The devices are semitransparent, with 8% absorptance at 642 nm, and are stable upon bending to a curvature of 1.4 cm. These capabilities and the low-voltage operation (<1 V) make them attractive for wearable applications.

Published
2016
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