221 results on '"Einfeldt, Sven"'
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2. Defects, performance, and reliability in UVC LEDs
3. Prospects of far-UVC LED technology
4. Author Correction: Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
5. Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models
6. Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
7. Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
8. Impact of Plasma Treatment of n-Al0.87Ga0.13N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
9. Defects, performance, and reliability in UVC LEDs
10. 234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
11. Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
12. Impact of Plasma Treatment of n-Al0.87Ga0.13N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
13. Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array design.
14. Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
15. Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
16. Spatially resolved degradation effects in UVB LEDs stressed by constant current operation.
17. [YIA] The influence of skin barrier disruption and melanin content on the formation of DNA lesions and radicals in ex vivo human skin induced by 233 nm far-UVC irradiation from LEDs
18. Development of far-UVC LEDs and their application in irradiation systems for antisepsis and sensing
19. UV LED reliability: degradation mechanisms and challenges
20. Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging
21. Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
22. Subsequent treatment of leafy vegetables with low doses of UVB-radiation does not provoke cytotoxicity, genotoxicity, or oxidative stress in a human liver cell model
23. Comparison of Ultraviolet B Light‐Emitting Diodes with Single or Triple Quantum Wells
24. Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs
25. Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N.
26. AlGaN-based deep UV LEDs: applications and challenges
27. On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities
28. Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device’s operating voltage
29. Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
30. Improved Efficiency of Ultraviolet B Light-Emitting Diodes with Optimized p-Side
31. On the dynamics of InGaN dot formation by RF-MBE growth
32. In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation
33. The 2020 UV emitter roadmap
34. Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
35. Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side
36. Impact of Insulators and Their Deposition Method on the Reliability of AlInGaN-Based UVB LEDs
37. Surface Instability and Associated Roughness of Pendeo-epitaxy GaN (0001) Films Grown via Metalorganic Vapor Phase Epitaxy
38. Helical-Type Surface Defects in GaN and InGaN Thin Films Epitaxially Grown on GaN Templates at Reduced Temperatures
39. Removal of 6H-SiC substrate influence when evaluating GaN thin film properties via x-ray
40. Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers
41. Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
42. Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes
43. Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
44. Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings
45. Enhanced wall plug efficiency of AlGaN-based deep-UV LEDs using Mo/Al as p-contact
46. High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
47. UV LED reliability: degradation mechanisms and challenges
48. Preconditioning of c-plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation
49. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature.
50. Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
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