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Transparan İletken Oksit (TCO) ince filmler günümüzde güneş pilleri, LED’ler, lazerler gibi optoelektronik cihazlarda sıklıkla kullanılmaktadır. Bu kontakların kullanımı cihazların verimliliğini doğrudam etkilemektedir. Bu çalışmanın amacı heteroeklemli güneş hücrelerinin (HJSCs) (n+) a-Si:H yüzünde ve yüksek elektron hareketliliği olan tranzistörlerde (HEMT) kullanmak üzere atomik katman kaplama (ALD) tekniği kullanarak alüminyum katkılı çinko oksit (AZO) üretmek ve optimize etmektir. Bu çalışmada büyütme sıcaklığı ve alüminyum katkılama oranının ALD’de büyütülmüş AZO’nun yapısal, elektriksel ve optik özelliklerine etkisi çalışılmıştır.Sonuçlar göstermiştir ki filmler görünür bölgede %80-90 arasında ışık geçirgenliğine, düşük elektriksel rezistansa (2.04x10-3 ohm.cm) ve 5.25 cm2/V.s değerinde mobiliteye sahiptir., Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface of silicon Heterojunction Solar Cells (HJSCs) and High Electron Mobility Transistor (HEMT) applications. This study is focused on the effect of the deposition temperature and aluminum atomic concentration on structural, electrical and optical properties of ALD grown AZO ohmic contact films. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance (2.04x10-3 ohm.cm) and mobility value of 5.25 cm2/V.s.

In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( Vth ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances

Gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices, which have wide application potential from power amplifiers to satellite, need to be thoroughly examined in terms of reliability in order to benefit the superior intrinsic properties of the device. The most critical parameter in the device reliability is the hotspot, or Tmax , which occurs somewhere on the subsurface and along the channel of the GaN HEMT, which is optically inaccessible due to optical path disability. Therefore, the Tmax value is underestimated in optical measurements, such as the thermographic IR and Raman methods. With 3-D electrothermal simulations, Tmax is obtained close to reality, but it requires a huge computation load and the complex modeling of semiconductor device physics. In 2-D or 3-D thermal simulations that do not use electrothermal simulations, since the self-heating is mostly modeled with a single heat source, neither the correct Tmax value is obtained nor the effect of bias conditions is considered. To address the aforementioned shortcomings, a hybrid method is demonstrated, which exploits the electrical measurements of GaN HEMT, which RF and reliability engineers often and easily do. It is demonstrated that Tmax can be determined quickly and close to the electrothermal simulations in a GaN HEMT device with a two-heat source method and finite element analysis (FEA) hybrid interaction with respect to various bias conditions. Moreover, the impact of the knee voltage is investigated with different knee-detection techniques. The proposed method provides GaN HEMT reliability engineers with an easy-to-implement alternative to reveal the hotspot location and the value.

In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression higher than 19 dB, input and output reflection coefficients better than −9 and −11 dB, respectively. The small-signal gain of LNA is more than 19 dB for the whole band, and NF has a minimum of 1.74 dB at 10.2 GHz. LNA obtains an OIP3 up to 34.2 dBm and survives input power as high as 42 dBm. Survivability is investigated in terms of gain compression and forward gate current. Reverse recovery time (RRT), a crucial parameter for radar front-ends, is explored with respect to the RC time constant and trap phenomenon. The analysis shows that the significant contribution in RRT is due to traps while the RC time constant is in the nanoseconds range. Moreover, this study also addresses the requirement and choice of a DC gate feed resistor for the subsequent stages in a multi-stage design. The size of the designed LNA chip is 3 mm (Formula presented.) 1.2 mm only.

Metal-organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 x 10(8) cm(-2) for Sample B with a lattice-matched In0.17Al0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).

In this study, we investigate acoustic wave propagation in 3 D phononic crystal (PnC) slabs wherein scatterers have different cross sections by using the finite-element method. The PnC consists of scatterers embedded in the host material arranged in a square lattice and honeycomb lattice in different patterns (bathroom and ladybug tiling in Archimedean-like tiling). By determining the eigenmodes and band gaps, complete and accurate band structures and transmission spectra are obtained. Compared to traditional square lattice PnCs, it has been observed that the bands obtained in pattern structures may have some advantages in terms of width and position. It was also shown that the low-frequency response of two Archimedean-like structures was similar with respect to the traditional square lattice.

In the present work, the structural, electronic and mechanical properties of Na2IrO3 and Li2IrO3 have been investigated by means of first principles calculations. The spin polarized generalized gradient approximation has been used for modeling exchange-correlation effects. The structural optimization of these compounds has been performed by using VASP-code, and the lattice parameters and magnetic moments have been calculated. From our calculation, it has been determined that X2IrO3 (X = Na, Li) compounds for both spin up and spin down states are indirect wide gap semiconductor in nature. Considering the spin states from the electronic band structure and density of the state (DOS) of the Na (Li)2IrO3 compounds, it has been identified that Eg=1.824 (2.315) eV for spin up and Eg=1.558 (2.019) eV for spin down. The second-order elastic constants have been calculated, and the other related quantities have also been estimated in the present work.

This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a two-stage X-band low-noise amplifier fabricated using 0.15 m GaN-on-SiC technology with 4x50 m and 4x75 m HEMTs at the first and the second stage, respectively. The surface temperature measured through infrared (IR) thermography has a diffraction-limited resolution. Moreover, it is impossible to measure sub-surface Tmax residing inside the two-dimensional electron gas of HEMT using IR thermographic measurements. Finite element analysis (FEA) thermal simulations are performed in this study to acquire the surface and sub-surface temperature profiles of the whole MMIC. IR measurements and FEA simulations are integrated through a correlation-based method verifying the accuracy of the FEA-based temperature profiles. This method leads to accurately finding the hotspots in the MMIC, thus revealing the Tmax of both stages. The correlation method using two filters approach to match the measurements and simulated temperature profiles of all the stages finds its application in MMICs’ high-temperature operating lifetime reliability tests.

Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.

Various methods for controlling the in-plane propagation direction and topological transitions of phonon polaritons (PhPs) in anisotropic van der Waals (vdW) materials rely on using twisted vdW bi-layers or the hybridization of anisotropic vdW materials with other functional materials such as graphene, hBN, and SiC. At the same time, visibly transparent SiC- and SiO2-based metastructures have potential to solve the problem of daytime radiative cooling. Here, as a unique method, we design a bifunctional α-MoO3-integrated SiC metasurface for effectively controlling the in-plane propagation direction of α-MoO3 PhPs. The control is enabled by a topological transition in the PhP dispersion, which is achieved by proper arrangements of the SiC meta-atoms. The proposed functionality of the designed metasurface is beneficial for the mid-infrared in-plane coupling between quantum emitters and heat management. Moreover, the α-MoO3–SiC metasurface functions as an efficient visibly transparent daytime radiative cooler.

Conference Name: International Conference on Electromagnetics in Advanced Applications (ICEAA) Date of Conference: 05-09 September 2022 This paper presents a multi-band metamaterial-based absorber using phononic two-dimensional (2D) material. The structure consists of a top hexagonal boron nitride (hBN) layer on an aluminum nanograting structure deposited on a dielectric slab waveguide and a thick metallic reflector forming an MIM (metal-insulator-metal) configuration. The proposed absorber exhibits a hyperbolic phonon polariton (HPPs) in hBN, surface plasmon (SP) modes in the spacer (ZnTe: zinc telluride), and Fabry-Perot resonances in the MIM configuration, resulting in five sharp, high absorption peaks in the mid-infrared (MIR) spectral range. The proposed multi-band absorber can be utilized in various applications, ranging from optical detection devices to multispectral thermoelectric volt.

Conference Name: Antennas and Propagation Society International Symposium Date of Conference: 10-15 July 2022 Unidirectional transmission of electromagnetic waves has attracted great interest due to its wide modern optical applications. This study theoretically demonstrates a one-way transmissive optical device with a high-contrast forward-to-backward ratio at the near-infrared region. The polarization-independent optical diode-like mechanism is designed using a metasurface diffraction grating configuration with symmetry breaking property along the wave propagation in which the working principle is based on the excitation of surface plasmon modes at the interfaces of thin metallic interlayer and their coupling to the radiation modes.

In AlGaN/GaN high electron mobility transistors (HEMTs), the long-term operation of the device is adversely affected by threshold voltage ( Vth ) instability and current collapse. In this letter, using structural and electrical analyses, the impact of trapping and fluorine (F) inclusion on the device operation is scrutinized. It is found that SiNx interfacial layer significantly reduced the formation of defects, during the ohmic annealing process. Moreover, the incorporation of F ions into GaN bulk, during the gate etch process, triggers the virtual gate phenomenon. This effect has also been mitigated via the pre-gate annealing (PGA) process. As a result of these modifications, a stable operation with minimized lag performance has been achieved.

GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band low-noise amplifier (LNA). This NF is comparable with state-of-the-art reported works in competitive GaAs and SiGe technologies. Moreover, this is the best reported NF in X-band using GaN technology to date. Two LNAs are fabricated using in-house 0.15 μm AlGaN/GaN on the SiC HEMT process. LNA-1 has inductive source degenerated (ISD) HEMTs at both stages, while LNA-2 has ISD HEMT at the first and common source at the second stage. The significance of ISD HEMT, for the first or subsequent stages in a multi-stage design, towards NF improvement is addressed. The criticality of stability networks towards NF contribution and its design is discussed in detail. Furthermore, even-mode stability of each HEMT after complete LNA design is assured using the S-probe method in Pathwave Advanced Design Systems.

Conference Name: 2022 Microwave Mediterranean Symposium (MMS) Date of Conference: 09-13 May 2022 Cascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage broadband low noise amplifier based upon 0.15 um GaN HEMT technology in the frequency range of 8 – 12 GHz. Cascode HEMT with inductive source degeneration is utilized. All the design work is done using PathWave Advanced Design System. The LNA provides 9.5 to 10.6 dB with input return loss better than 10 dB and output return loss better than 8 dB in the whole band. The noise figure of the amplifier is below 1.9 dB. The linearity parameters P1dB and OIP3 are greater than equal to 16 dBm and 28 dBm respectively within operating bandwidth. The noise figure of the amplifier is fairly constant over 30 mA to 60 mA bias currents and 9 V – 18 V operating bias voltage. This is a unique finding which is being reported for the first time to the best of authors' knowledge.

3-Dimensional (3D) cyanide coordination polymers, typically known as Prussian blue Analogues (PBAs), have received great attention in catalysis due to their stability, easily tuned metal sites, and porosity. However, their high crystallinities and relatively low number of surface-active sites significantly hamper their intrinsic catalytic activities. Herein, we report the utilization of a 2-dimensional (2D) layered cobalt tetracyanonickelate, [Co–Ni], for the reduction of protons to H2. Relying on its exposed facets, layered morphology, and abundant surface-active sites, [Co–Ni] can efficiently convert water and sunlight to H2 in the presence of a ruthenium photosensitizer (Ru PS) with an optimal evolution rate of 30 029 ± 590 μmol g−1 h−1, greatly exceeding that of 3D Co–Fe PBA [Co–Fe] and Co–Co PBA [Co–Co]. Furthermore, [Co–Ni] retains its structural integrity throughout a 6 hour photocatalytic cycle, which is confirmed by XPS, PXRD, and Infrared analysis. This recent work reveals the excellent morphologic properties that promote [Co–Ni] as an attractive catalyst for the hydrogen evolution reaction (HER).

Conference Name: 2022 Microwave Mediterranean Symposium (MMS) Date of Conference: 09-13 May 2022 Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 GHz by using HEMTs with source degeneration in 0.15 µm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V /20 mA.

This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio‐frequency output power of 89 W and a power gain of 52 dB with an associated power‐added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two‐tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved.

This paper investigates diffractions by gratings made of a dispersive material in an epsilon-near-zero (ENZ) regime and having one-side corrugations, and those by two-component dielectric-ENZ gratings with the inner corrugations and flat outer interfaces. The goal is to achieve wideband and simultaneously wide-angle −1st order blazing (deflection) that may enable wideband spatial filtering and demultiplexing in reflection mode. Several typical scenarios are discussed, which differ in the maximum magnitude of the blazed wave and size of the blazing area observed on the frequency-incidence angle plane, as well as the contribution of the ranges of positive and negative permittivity in the vicinity of zero. The high capability of ENZ and dielectric-ENZ gratings in asymmetric reflection is demonstrated for three different levels of losses for the dispersive material.

In modern thermal infrared applications, multi-spectral camouflage scenarios should be developed to mitigate the thermal signature of an object. In general, camouflage needs to be satisfied in two main optical ranges: visible, and infrared (IR). In the IR range, two main camera modes are deployed to detect the IR signature of an object: $i) $ short-wave IR (SWIR) cameras that detect the solar photons reflected off a surface, $ii) $ mid-wave IR (MWIR) and long-wave IR (LWIR) cameras that directly collect the blackbody photons emitted from a hot object. Therefore, in an ideal scheme to acquire a multi-spectral camouflage function with self-cooling capability, the object should have: $i) $ perfect absorption in the SWIR range, $ii) $ perfect reflection in the MWIR and LWIR ranges, $iii) $ perfect absorption and one-way transmission in non-transmissive IR (NTIR) window (to radiatively cool itself), and $iv) $ visible transparency (to keep background visual appearance intact and to minimize the heat build-up due to solar absorption). In this paper, an all-dielectric nanoantenna emitter design is developed to comply with all the above-mentioned requirements. The approach relies on the indium tin oxide (ITO) grating structures coated on a flexible and transparent substrate (polystyrene). The spectral behaviors of the proposed structure are obtained using both analytical and numerical approaches. The design has an absorption peak with 0.8 amplitude in the SWIR mode (for the backward and forward illuminations), while it shows average reflections $\simeq 0.7 $ in the MWIR and LWIR ranges for the forward illumination. The peak values of transmission and absorption within the NTIR window for the forward illumination are around 0.6 and 0.9, respectively. Meanwhile, the use of lossless materials within the visible range provides visible light transmission and minimizes the heat build-up due to solar absorption. In addition, the radiated power calculation model is utilized to demonstrate the low power detection on the IR cameras.

In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$m gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 $\rm\mu$m AlGaN/GaN on SiC technology.

Conference Name: International Conf on Electrical and Electronic Engineering (ICEEE) Date of Conference: 29-31 March 2022 An analysis has been made on high-K dielectrics (HfO 2 and ZrO 2) for the CMOS process up to 14 nm FAB technology node. The aim is to study the reduction in gate leakage current for Nano-scale devices. High-K Dielectric having K ≥ 20 is beneficial for CMOS Nano-devices, reducing the gate leakage current when EOT ≤ 0.5 nm. MOS structure with high-K, i.e., HfO 2 and ZrO 2 , has been simulated in SILVACO T-CAD to consider as gate stack: metal/oxide/p-Si for the different FAB nodes; 45, 32, 22 & 14 nm. SiO 2 is considered a reference to optimize the MOS structure with high-K dielectric. As a result, 7–8 times the higher physical gate oxide layer is achieved compared to SiO 2 , which has a significant impact on minimizing the gate leakage current.

We present a simple and easy-to-scale synthetic method to plug common organic photosensitizers into a cyanide-based network structure for the development of photosensitizer-water oxidation catalyst (PS-WOC) dyad assemblies for the photocatalytic water oxidation process. Three photosensitizers, one of which absorbs red light similar to P680 in photosystem II, were utilized to harvest different regions of the solar spectrum. Photosensitizers are covalently coordinated to CoFe Prussian blue structures to prepare PS-WOC dyads. All dyads exhibit steady water oxidation catalytic activities throughout a 6 h photocatalytic experiment. Our results demonstrate that the covalent coordination between the PS and WOC group not only enhances the photocatalytic activity but also improves the robustness of the organic PS group. The photocatalytic activity of "plug and play" dyads relies on several structural and electronic parameters, including the position of the energy levels of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the PS with respect to the HOMO level of the catalytic site, the intensity and wavelength of the absorption band of the PS, and the number of catalytic sites.

Metamaterials and their two-dimensional forms, metasurfaces, have been studied intensively due to their unique features that usually do not exist in nature. Due to their unusual properties, they have found their way into many different application areas. One of these application areas is metalens application, where the metasurfaces are formed as flat lenses and they bend the wavefront of the outgoing electromagnetic wave. Metalenses are a candidate to replace the spherical lenses because they are much smaller, they are easy to fabricate, and they are a solution to aberration problems. In this paper, a metalens structure with \(11 \mu\)m operating wavelength is studied. In addition to working at the long infrared wavelength, the dynamic feature is brought to the metalens with the addition of vanadium dioxide, and power control at the focal point is obtained.

In this manuscript, we experimentally demonstrate a parity-time-symmetric optoelectronic oscillator (OEO) with polarization multiplexed channels. We obtained a microwave single-mode oscillation at 9.5 GHz with phase noise values of −116.2 and −122.3 dBc Hz−1 at 10 kHz offset frequencies, and side mode suppression values below −68 and −75 dBc Hz−1, by utilizing a 1 km long and 5 km long single mode fiber delay lines, respectively. Our experimental results suggest that parity-time-symmetric OEOs with polarization multiplexed channels are simple and cost-efficient alternatives to their more complex counterparts.

Deflection, a basic functionality of wavefront manipulation is usually associated with the phase-gradient metasurfaces and the classical blazed gratings. We numerically and experimentally demonstrate an unusually wideband and simultaneously wide-angle deflection achieved at near-infrared in reflection mode for a periodic (nongradient), ultrathin meta-array comprising only one silicon nanorod (Mie resonator) per period. It occurs in the range where only the first negative diffraction order and zero order may propagate. Deflection serves as the enabler for multifunctional operation. Being designed with the main goal to obtain ultra-wideband and wide-angle deflection, the proposed meta-array is also capable in spatial filtering and wide-angle splitting. Spatial filtering of various types can be obtained in one structure by exploiting either deflection in nonzero diffraction orders, or the specular-reflection (zero-order) regime. Thus, the role of different diffraction orders is clarified. Moreover, on–off switching of deflection and related functionalities is possible by changing polarization state of the incident wave. The suggested device is simple to fabricate and only requires cost-effective materials, so it is particularly appropriate for the large-area fabrication using nanoprint lithography. Ultra-wideband wide-angle and other deflection scenarios, along with the other functionalities, are promising for applications in optical communications, laser optics, sensing, detection, and imaging.

In this study, Al0.3Ga0.7N/GaNhigh electron mobility transistor (HEMT) structure is investigated grown overc- oriented sapphire substrate by using Metal Organic Chemical Vapor Deposition(MOCVD) method. Optical, morphological and electrical characteristics of thisstructure are determined by X-ray diffraction (XRD), Photoluminecanse (PL),Ultraviolet (UV-Vis.), Atomic Force Microscopy (AFM) and Hall- Resistivitymeasurements. By using XRD method, 2θ, Full Width at Half Maximun (FWHM),lattice parameters, crystallite size, strain, stress and dislocation values arecalculated on symmetric and asymmetric planes. Direct band gap of GaN isdetermined by PL measurements as 3.24 eV. It is seen that conduction of AlGaNlayer starts at 360 nm in UV-Vis. In Hall-Resistivity measurements, it isnoticed that carrier density of HEMT structure is not effected by temperatureand mobility value is high. Carrier density and mobility values are determinedas 5.82x1015 1/cm3 and 1198 cm2/Vs at roomtemperature respectively. At the lowest temperature point (25 K) they arecalculated as 5.19x1015 1/cm3 and 6579 cm2/Vs,respectively., In this study, Al0.3Ga0.7N/GaNhigh electron mobility transistor (HEMT) structure is investigated grown overc- oriented sapphire substrate by using Metal Organic Chemical Vapor Deposition(MOCVD) method. Structural, optical, morphological and electricalcharacteristics of this structure are determined by X-ray diffraction (XRD), Photoluminescence (PL), Ultraviolet (UV-Vis.), Atomic Force Microscopy(AFM) and Hall- Resistivity measurements. By using XRD method, 2θ, Full Widthat Half Maximun (FWHM), lattice parameters, crystallite size, strain, stressand dislocation values are calculated on symmetric and asymmetric planes.Direct band gap of GaN is determined by PL measurements as 3.24 eV. It is seenthat conduction of AlGaN layer starts at 360 nm in UV-Vis. In Hall-Resistivitymeasurements, it is noticed that carrier density of HEMT structure is noteffected by temperature and mobility value is high. Carrier density andmobility values are determined as 5.82x1015 1/cm3 and1198 cm2/V.s at room temperature, respectively. At the lowest temperaturepoint (25 K) they are calculated as 5.19x1015 1/cm3 and6579 cm2/Vs, respectively.