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Spin torque oscillators are spintronic devices that generate a periodic output signal from a non-periodic input, making them promising candidates for applications like microwave communications and neuromorphic computing. However, traditional spin torque oscillators suffer from a limited precessional cone angle and thermal stability, as well as a need for an applied bias magnetic field. We use micromagnetic simulations to demonstrate a novel spin torque oscillator that relies on spin-orbit effects in ferromagnets to overcome these limitations. The key mechanism behind this oscillator is the generation of an out-of-plane spin current, in which both the spin flow and the spin orientation are out-of-plane. The torque from this spin current enables easy-plane coherent magnetic precession with a large cone angle and high thermal stability over a micron-scale lateral area. Moreover, the precession occurs about an internal field in the free layer, thereby eliminating the need for an external bias field. We demonstrate the feasibility of an easy-plane spin-orbit torque oscillator at room temperature over a wide parameter space, including the ratio of the out-of-plane spin current to the conventional spin-Hall spin current, presenting exciting possibilities for this novel spintronic device.

Energy-efficient spintronic devices require a large spin-orbit torque (SOT) and low damping to excite magnetic precession. In conventional devices with heavy-metal/ferromagnet bilayers, reducing the ferromagnet thickness to $\sim$1 nm enhances the SOT but dramatically increases damping. Here, we investigate an alternative approach based on a 10 nm thick single-layer ferromagnet to attain both low damping and a sizable SOT. Instead of relying on a single interface, we continuously break the bulk inversion symmetry with a vertical compositional gradient of two ferromagnetic elements: Fe with low intrinsic damping and Ni with sizable spin-orbit coupling. We find low effective damping parameters of $\alpha_\mathrm{eff} < 5\times10^{-3}$ in the FeNi alloy films, despite the steep compositional gradients. Moreover, we reveal a sizable anti-damping SOT efficiency of $\theta_\mathrm{AD} \approx 0.05$, even without an intentional compositional gradient. Through depth-resolved x-ray diffraction, we identify a lattice strain gradient as crucial symmetry breaking that underpins the SOT. Our findings provide fresh insights into damping and SOTs in single-layer ferromagnets for power-efficient spintronic devices.

An electrically conductive metal typically transmits or absorbs a spin current. Here, we report on evidence that interfacing two metal thin films can suppress spin transmission and absorption. We examine spin pumping in ferromagnet/spacer/ferromagnet heterostructures, in which the spacer -- consisting of metallic Cu and Cr thin films -- separates the ferromagnetic spin-source and spin-sink layers. The Cu/Cr spacer largely suppresses spin pumping -- i.e., neither transmitting nor absorbing a significant amount of spin current -- even though Cu or Cr alone transmits a sizable spin current. The antiferromagnetism of Cr is not essential for the suppression of spin pumping, as we observe similar suppression with Cu/V spacers where V is a nonmagnetic analogue of Cr. We speculate that diverse combinations of spin-transparent metals may form interfaces that suppress spin pumping, although the underlying mechanism remains unclear. Our work may stimulate a new perspective on understanding and engineering spin transport in metallic multilayers.

In ferromagnetic metals, transverse spin currents are thought to be absorbed via dephasing -- i.e., destructive interference of spins precessing about the strong exchange field. Yet, due to the ultrashort coherence length of $\approx$1 nm in typical ferromagnetic thin films, it is difficult to distinguish dephasing in the bulk from spin-flip scattering at the interface. Here, to assess which mechanism dominates, we examine transverse spin-current absorption in ferromagnetic NiCu alloy films with reduced exchange fields. We observe that the coherence length increases with decreasing Curie temperature, as weaker dephasing in the film bulk slows down spin absorption. Moreover, nonmagnetic Cu impurities do not diminish the efficiency of spin-transfer torque from the absorbed spin current. Our findings affirm that transverse spin current is predominantly absorbed by dephasing inside the nanometer-thick ferromagnetic metals, even with high impurity contents.

We examine room-temperature magnetic relaxation in polycrystalline Fe films. Out-of-plane ferromagnetic resonance (FMR) measurements reveal Gilbert damping parameters of $\approx$ 0.0024 for Fe films with thicknesses of 4-25 nm, regardless of their microstructural properties. The remarkable invariance with film microstructure strongly suggests that intrinsic Gilbert damping in polycrystalline metals at room temperature is a local property of nanoscale crystal grains, with limited impact from grain boundaries and film roughness. By contrast, the in-plane FMR linewidths of the Fe films exhibit distinct nonlinear frequency dependences, indicating the presence of strong extrinsic damping. To fit our in-plane FMR data, we have used a grain-to-grain two-magnon scattering model with two types of correlation functions aimed at describing the spatial distribution of inhomogeneities in the film. However, neither of the two correlation functions is able to reproduce the experimental data quantitatively with physically reasonable parameters. Our findings advance the fundamental understanding of intrinsic Gilbert damping in structurally disordered films, while demonstrating the need for a deeper examination of how microstructural disorder governs extrinsic damping.

Propagation of easy-plane magnetic precession can enable more efficient spin transport than conventional spin waves. Such easy-plane spin transport is typically understood in terms of a hydrodynamic model, partially analogous to superfluids. Here, using micromagnetic simulations, we examine easy-plane spin transport in magnetic strips as the motion of a train of domain walls rather than as hydrodynamic flow. We observe that the motion transitions from diffusive to fluid-like as the density of domain walls is increased. This transition is most evident in notched nanostrips, where the the domain walls are pinned by the notch defect in the diffusive regime but propagate essentially unimpeded in the fluid-like regime. Our findings suggest that spin transport via easy-plane precession, robust against defects, is achievable in strips based on realistic metallic ferromagnets and hence amenable to practical device applications., Comment: 13 pages, 10 figures

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors., Comment: an invited paper in the "Advances in Magnetics" series

We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable damping-like SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of $\approx$0.8 in epitaxial Pt. Our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.

Spin currents can exert spin-transfer torques on magnetic systems even in the limit of vanishingly small net magnetization, as is the case for antiferromagnets. Here, we experimentally show that a spin-transfer torque is operative in a material with weak, short-range magnetic order -- namely, a macroscopic ensemble of superparamagnetic-like Co nanomagnets. We employ element- and time-resolved X-ray ferromagnetic resonance (XFMR) spectroscopy to directly detect sub-ns dynamics of the Co nanomagnets, excited into precession with cone angle $\geq$0.003$^{\circ}$ by an oscillating spin current. XFMR measurements reveal that as the net moment of the ensemble decreases, the strength of the spin-transfer torque increases relative to those of magnetic field torques. Our findings point to spin-transfer torque as an effective way to manipulate the state of nanomagnet ensembles at sub-ns timescales.

To develop low-moment, low-damping metallic ferromagnets for power-efficient spintronic devices, it is crucial to understand how magnetic relaxation is impacted by the addition of nonmagnetic elements. Here, we compare magnetic relaxation in epitaxial Fe films alloyed with light nonmagnetic elements of V and Al. FeV alloys exhibit lower intrinsic damping compared to pure Fe, reduced by nearly a factor of 2, whereas damping in FeAl alloys increases with Al content. Our experimental and computational results indicate that reducing the density of states at the Fermi level, rather than the average atomic number, has a more significant impact in lowering damping in Fe alloyed with light elements. Moreover, FeV is confirmed to exhibit an intrinsic Gilbert damping parameter of $\simeq$0.001, among the lowest ever reported for ferromagnetic metals., Comment: 28 pages, 9 figures

It has been predicted that transverse spin current can propagate coherently (without dephasing) over a long distance in antiferromagnetically ordered metals. Here, we estimate the dephasing length of transverse spin current in ferrimagnetic CoGd alloys by spin pumping measurements across the compensation point. A modified drift-diffusion model, which accounts for spin-current transmission through the ferrimagnet, reveals that the dephasing length is about 4-5 times longer in nearly compensated CoGd than in ferromagnetic metals. This finding suggests that antiferromagnetic order can mitigate spin dephasing -- in a manner analogous to spin echo rephasing for nuclear and qubit spin systems -- even in structurally disordered alloys at room temperature. We also find evidence that transverse spin current interacts more strongly with the Co sublattice than the Gd sublattice. Our results provide fundamental insights into the interplay between spin current and antiferromagnetic order, which are crucial for engineering spin torque effects in ferrimagnetic and antiferromagnetic metals.

How spin-orbit torques emerge from materials with weak spin-orbit coupling (e.g., light metals) is an open question in spintronics. Here, we report on a field-like spin-orbit torque (i.e., in-plane spin-orbit field transverse to the current axis) in SiO$_2$-sandwiched permalloy (Py), with the top Py-SiO$_2$ interface incorporating ultrathin Ti or Cu. In both SiO$_2$/Py/Ti/SiO$_2$ and SiO$_2$/Py/Cu/SiO$_2$, this spin-orbit field opposes the classical Oersted field. While the magnitude of the spin-orbit field is at least a factor of 3 greater than the Oersted field, we do not observe evidence for a significant damping-like torque in SiO$_2$/Py/Ti/SiO$_2$ or SiO$_2$/Py/Cu/SiO$_2$. Our findings point to contributions from a Rashba-Edelstein effect or spin-orbit precession at the (Ti, Cu)-inserted interface.

High-quality epitaxial ferrites, such as low-damping MgAl-ferrite (MAFO), are promising nanoscale building blocks for all-oxide heterostructures driven by pure spin current. However, the impact of oxide interfaces on spin dynamics in such heterostructures remains an open question. Here, we investigate the spin dynamics and chemical and magnetic depth profiles of 15-nm-thick MAFO coherently interfaced with an isostructural $\approx$1-8-nm-thick overlayer of paramagnetic CoCr$_2$O$_4$ (CCO) as an all-oxide model system. Compared to MAFO without an overlayer, effective Gilbert damping in MAFO/CCO is enhanced by a factor of $>$3, irrespective of the CCO overlayer thickness. We attribute this damping enhancement to spin scattering at the $\sim$1-nm-thick chemically disordered layer at the MAFO/CCO interface, rather than spin pumping or proximity-induced magnetism. Our results indicate that damping in ferrite-based heterostructures is strongly influenced by interfacial chemical disorder, even if the thickness of the disordered layer is a small fraction of the ferrite thickness.

Confirming the origin of Gilbert damping by experiment has remained a challenge for many decades, even for simple ferromagnetic metals. In this Letter, we experimentally identify Gilbert damping that increases with decreasing electronic scattering in epitaxial thin films of pure Fe. This observation of conductivity-like damping, which cannot be accounted for by classical eddy current loss, is in excellent quantitative agreement with theoretical predictions of Gilbert damping due to intraband scattering. Our results resolve the longstanding question about a fundamental damping mechanism and offer hints for engineering low-loss magnetic metals for cryogenic spintronics and quantum devices.

We investigate the impact of pinned antiferromagnetic order on the decoherence of spin current in polycrystalline IrMn. In NiFe/Cu/IrMn/CoFe multilayers, we coherently pump an electronic spin current from NiFe into IrMn, whose antiferromagnetic order is globally pinned by static exchange-bias coupling with CoFe. We observe no anisotropic spin decoherence with respect to the orientation of the pinned antiferromagnetic order. We also observe no difference in spin decoherence for samples with and without pinned antiferromagnetic order. Moreover, although there is a pronounced resonance linewidth increase in NiFe that coincides with the switching of IrMn/CoFe, we show that this is not indicative of anisotropic spin decoherence in IrMn. Our results demonstrate that the decoherence of electron-mediated spin current is remarkably insensitive to the magnetization state of the antiferromagnetic IrMn spin sink.

We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with in-plane biaxial anisotropy and interlayer exchange coupling. Staggered field-like Rashba spin-orbit torques from the opposite surfaces of the SAF induce a canted net magnetization, which triggers an orthogonal torque that drives 90$^\circ$ switching of the N\'eel vector. Such dynamics driven by the field-like spin-orbit torque allows for faster switching with increased Gilbert damping, without a significant detrimental increase of the threshold switching current density. Our results point to the potential of SAFs as model systems, based on simple ferromagnetic metals, to mimic antiferromagnetic device physics.

We experimentally investigate spin-orbit torque and spin pumping in Y$_3$Fe$_5$O$_{12}$(YIG)/Pt bilayers with ultrathin insertion layers at the interface. An insertion layer of Cu suppresses both spin-orbit torque and spin pumping, whereas an insertion layer of Ni$_{80}$Fe$_{20}$ (permalloy, Py) enhances them, in a quantitatively consistent manner with the reciprocity of the two spin transmission processes. However, we observe a large enhancement of Gilbert damping with the insertion of Py that cannot be accounted for solely by spin pumping, suggesting significant spin-memory loss due to the interfacial magnetic layer. Our findings indicate that the magnetization at the YIG-metal interface strongly influences the transmission and depolarization of pure spin current.

Thin films of perovskite oxides offer the possibility of combining emerging concepts of strongly correlated electron phenomena and spin current in magnetic devices. However, spin transport and magnetization dynamics in these complex oxide materials are not well understood. Here, we experimentally quantify spin transport parameters and magnetization damping in epitaxial perovskite ferromagnet/paramagnet bilayers of La$_{2/3}$Sr$_{1/3}$MnO$_3$/SrRuO$_3$ (LSMO/SRO) by broadband ferromagnetic resonance spectroscopy. From the SRO thickness dependence of Gilbert damping, we estimate a short spin diffusion length of $\lesssim$1 nm in SRO and an interfacial spin-mixing conductance comparable to other ferromagnet/paramagnetic-metal bilayers. Moreover, we find that anisotropic non-Gilbert damping due to two-magnon scattering also increases with the addition of SRO. Our results demonstrate LSMO/SRO as a spin-source/spin-sink system that may be a foundation for examining spin-current transport in various perovskite heterostructures.

An electric current in the presence of spin-orbit coupling can generate a spin accumulation that exerts torques on a nearby magnetization. We demonstrate that, even in the absence of materials with strong bulk spin-orbit coupling, a torque can arise solely due to interfacial spin-orbit coupling, namely Rashba-Eldestein effects at metal/insulator interfaces. In magnetically soft NiFe sandwiched between a weak spin-orbit metal (Ti) and insulator (Al$_2$O$_3$), this torque appears as an effective field, which is significantly larger than the Oersted field and sensitive to insertion of an additional layer between NiFe and Al$_2$O$_3$. Our findings point to new routes for tuning spin-orbit torques by engineering interfacial electric dipoles.

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here we investigate resonant magnetization dynamics in ferromagnet/ferrolectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

We experimentally investigate spin-orbit torques and spin pumping in NiFe/Pt bilayers with direct and interrupted interfaces. The damping-like and field-like torques are simultaneously measured with spin-torque ferromagnetic resonance tuned by a dc bias current, whereas spin pumping is measured electrically through the inverse spin Hall effect using a microwave cavity. Insertion of an atomically thin Cu dusting layer at the interface reduces the damping-like torque, field-like torque, and spin pumping by nearly the same factor of ~1.4. This finding confirms that the observed spin-orbit torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We also find that spin-current scattering at the NiFe/Pt interface contributes to additional enhancement in magnetization damping that is distinct from spin pumping.

We report on large modifications of current-induced spin-orbit torques in a gated Pt/Co/Gd-oxide microstrip due to voltage-driven O$^{2-}$ migration. The Slonczewski-like and field-like torques are quantified using a low-frequency harmonic technique based on the polar magneto-optical Kerr effect. Voltage-induced oxidation of Co enhances the Slonczewski-like torque by as much as an order of magnitude, and simultaneously reduces the anisotropy energy barrier by a factor of ~5. Such magneto-ionic tuning of interfacial spin-orbit effects may significantly enhance the efficiency of magnetization switching and provide additional degrees of freedom in spintronic devices.

We present a simple technique using a cavity-based resonance spectrometer to quantify the anti-damping torque due to the spin Hall effect. Modification of ferromagnetic resonance is observed as a function of small DC current in sub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB and strong spin-Hall metal Ta. From the detected current-induced linewidth change, we obtain an effective spin Hall angle of 0.08-0.09 independent of the magnetic layer thickness. Our results demonstrate that a sensitive resonance spectrometer can be a general tool to investigate spin Hall effects in various material systems, even those with vanishingly low conductivity and magnetoresistance.

Thermally activated domain-wall (DW) motion driven by magnetic field and electric current is investigated experimentally in out-of-plane magnetized Pt(Co/Pt)$_3$ multilayers. We directly extract the thermal activation energy barrier for DW motion and observe the dynamic regimes of creep, depinning, and viscous flow. Further analysis reveals that the activation energy must be corrected with a factor dependent on the Curie temperature, and we derive a generalized Arrhenius-like equation governing thermally activated motion. By using this generalized equation, we quantify the efficiency of current-induced spin torque in assisting DW motion. Current produces no effect aside from Joule heating in the multilayer with 7-\AA\ thick Co layers, whereas it generates a finite spin torque on DWs in the multilayer with atomically thin 3-\AA\ Co layers. These findings suggest that conventional spin-transfer torques from in-plane spin-polarized current do not drive DWs in ultrathin Co/Pt multilayers.

In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magnetoelectric coupling mechanisms. We directly observe, for the first time, in situ voltage driven O$^{2-}$ migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.6 erg/cm$^2$. We exploit the thermally-activated nature of ion migration to dramatically increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

Current-induced domain wall motion in the presence of the Dzyaloshinskii-Moriya interaction (DMI) is experimentally and theoretically investigated in heavy-metal/ferromagnet bilayers. The angular dependence of the current-induced torque and the magnetization structure of Dzyaloshinskii domain walls are described and quantified simultaneously in the presence of in-plane fields. We show that the DMI strength depends strongly on the heavy metal, varying by a factor of 20 between Ta and Pa, and that strong DMI leads to wall distortions not seen in conventional materials. These findings provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.

In most ferromagnets the magnetization rotates from one domain to the next with no preferred handedness. However, broken inversion symmetry can lift the chiral degeneracy, leading to topologically-rich spin textures such as spin-spirals and skyrmions via the Dzyaloshinskii-Moriya interaction (DMI). Here we show that in ultrathin metallic ferromagnets sandwiched between a heavy metal and an oxide, the DMI stabilizes chiral domain walls (DWs) whose spin texture enables extremely efficient current-driven motion. We show that spin torque from the spin Hall effect drives DWs in opposite directions in Pt/CoFe/MgO and Ta/CoFe/MgO, which can be explained only if the DWs assume a N\'eel configuration with left-handed chirality. We directly confirm the DW chirality and rigidity by examining current-driven DW dynamics with magnetic fields applied perpendicular and parallel to the spin spiral. This work resolves the origin of controversial experimental results and highlights a new path towards interfacial design of spintronic devices.

The influence of gate voltage, temperature and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by an electric field applied to the Co/GdOx interface via a linear modulation of the activation energy barrier with gate voltage. At low speeds, the DW velocity can be changed significantly by a gate voltage, but the effect is diminished as the DW velocity increases, which limits electric field control of fast DW motion.

Current-driven domain wall (DW) motion is investigated in Pt/Co/GdOx nanostrips with perpendicular magnetic anisotropy. Measurements of the propagation field and the energy barrier for thermally activated DW motion reveal a large current-induced torque equivalent to an out-of-plane magnetic field of ~60 Oe per 10^11 A/m^2. This same field-to-current scaling is shown to hold in both the slow thermally activated and fast near-flow regimes of DW motion. The current-induced torque decreases with 4 {\AA} of Pt decorating the Co/GdOx interface and vanishes entirely with Pt replacing GdOx, suggesting that the Co/GdOx interface contributes directly to highly efficient current-driven DW motion., Comment: in press