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A new and versatile technique for the wafer scale nanofabrication of silicon nanowire (SiNW) and multiwalled carbon nanotube (MWNT) tips on atomic force microscope (AFM) probes is presented. Catalyst material for the SiNW and MWNT growth was deposited on prefabricated AFM probes using aligned wafer scale nanostencil lithography. Individual vertical SiNWs were grown epitaxially by a catalytic vapor−liquid−solid (VLS) process and MWNTs were grown by a plasma-enhanced chemical vapor (PECVD) process on the AFM probes. The AFM probes were tested for imaging micrometers-deep trenches, where they demonstrated a significantly better performance than commercial high aspect ratio tips. Our method demonstrates a reliable and cost-efficient route toward wafer scale manufacturing of SiNW and MWNT AFM probes.

Reproducible high-yield purification process of multiwalled carbon nanotubes (CNTs) was developed by thermal annealing in ultrapure oxygen. The optimized condition involves thermal annealing via a PID controlled heater in high purity oxygen at temperature of 450°C for 180s, which burns out amorphous carbon and reactivate nickel catalyst. Controlling of the purification temperature is important for high yield CNTs, as excessive high annealing temperature results in deformation of the CNTs. Unlike hazardous wet purification treatments, purified CNTs remained vertically aligned and offer the possibility of tailored CNTs length through layer-by-layer process. The purification process is glass compatible and can be adapted to industrial synthesis of CNTs.

Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.