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Patterning organic materials by photolithography enables not only high-resolution, side-by-side RGB OLED arrays, but also the introduction of organic photodetector in the same frontplane. We show patterned active matrix displays processed on flexible backplane. Furthermore, we demonstrate OPD patterning proof-of-concept. These are the building blocks allowing in-cell optical fingerprint sensor.

Photolithography is the critical enabler to realize the scaling and integration of organic and hybrid electronics (OHE). This presentation will show our works regarding organic complementary circuits and Fine-Metal-Mask (FMM)-free sensor-in-display integration. We will show results in ultralow-power transponder, line drivers for AMOLED display, cathode patterning on top of OLED, and OLED characteristics after multiple photolithographic patterning steps.

ispartof: pages:547-550 ispartof: SID's Digest of Technical Papers vol:51 issue:1 pages:547-550 ispartof: SID Display Week location:online status: Published online

High-resolution RGB organic light-emitting diode frontplane is a key enabler for direct-view transparent augmented reality displays. In this paper, we demonstrate 1250 ppi passive displays and semi-transparent active displays. Organic light-emitting diode photolithography can provide pixel density above 1000 ppi while keeping effective emission area high because of high aperture ratio. Patterns with 2 μm line pitch were successfully transferred to emission layers, indicating possible further pixel density scaling. Lifetime after patterning, key parameter enabling industrialization, is above 150 h (T90 at 1000 nit).

We use sALD to deposit IGZO and Al2O3 layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (d200oC). We attain mobility of 8 cm2/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.

This work provides an overview of our GaN-on-Si activity for high voltage applications. We will discuss the failure mechanisms of GaN-on-Si devices by electrical characterization and TCAD simulations. The main issues of the use of the Si as substrate are identified and addressed. A breakdown voltage as high as 1050 V and a specific on-resistance as low as 2 mOhm⋅cm2 have been achieved.

We investigated the limitations of the field plate (FP) effect on breakdown voltage VBD that is due to the silicon substrate in AlGaN/GaN/AlGaN double heterostructures field-effect transistors. In our previous work, we showed that in devices with large gate-drain distance (LGD > 8 μm), the breakdown voltage does not linearly increase with LGD because of a double leakage path between the silicon substrate and the metal contacts, which makes the device break at the silicon interface. In this paper, we showed that the effect of the FP for such large LGD is not significant because the breakdown is still dominated by the silicon substrate. The increase in VBD due to the FP is significant only for devices with small gate-drain distances (LGD

© 2015 AIP Publishing LLC. The charge carrier transport in thin film hybrid solar cells is analyzed and correlated with device performance and the mechanisms responsible for recombination loss. The hybrid bulk heterojunction consisted of a blend of poly(3-hexylthiophene) (P3HT) and small size (2.4 nm) PbS quantum dots (QDs). The charge transport in the P3HT:PbS blends was determined by measuring the space-charge limited current in hole-only and electron-only devices. When the loading of PbS QDs exceeds the percolation threshold, a significant increase of the electron mobility is observed in the blend with PbS QDs. The hole mobility, on the other hand, only slightly decreased upon increasing the loading of PbS QDs. We also showed that the photocurrent is limited by the low shunt resistance rather than by space-charge effects. The significant reduction of the fill factor at high light intensity suggests that under these conditions the non-geminate recombination dominates. However, at open-circuit conditions, the trap-assisted recombination dominates over non-geminate recombination. ispartof: Journal of Applied Physics vol:117 issue:095503 pages:3-10 status: published

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