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We recently published a study concerning femtosecond pump–probe absorption edge spectroscopy of cubic GaN (fundamental bandgap: 3.23 eV), resulting in the transient dielectric function. In the present study, we continue our investigations of those pump–probe measurements by determining the time-dependent transition energy at the Fermi-vector between the conduction and valence bands. The generation of electron–hole pairs by the 266 nm pump-beam (4.66 eV) shifts the absorption edge by ≈ 500 meV within 1 ps due to many-body effects like band-filling and bandgap renormalization. Modeling this ultra-fast change is achieved by converting the transition energies into free-carrier concentrations, assuming the electron contributions to be dominant. We consider the relaxation, recombination, and diffusion of those free-carriers as well as either an additional gain-recombination or temperature effects. This allows for describing the transition energies on short time scales. Both models yield similar values for the characteristic relaxation time (≈ 0.21 ps), recombination time (≈ 25 ps), and diffusion coefficient (≈ 1 cm 2 /s). [ABSTRACT FROM AUTHOR]

An ultra-fast change of the absorption onset for zincblende gallium-nitride (zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a large electron–hole pair concentration up to 4 × 10 20 cm − 3 , which shift the transition energy between conduction and valence bands due to many-body effects up to ≈ 500 meV. Here, the absorption onset increases due to band filling while the bandgap renormalization at the same time decreases the bandgap. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier concentrations at the surface, and low concentrations at the interface to the substrate. This leads to varying optical properties from the sample surface (high transition energy) to substrate (low transition energy), which are taken into account by grading analysis for an accurate description of the experimental data. For this, a model describing the time- and position-dependent free-carrier concentration is formulated by considering the relaxation, recombination, and diffusion of those carriers. We provide a quantitative analysis of optical experimental data (ellipsometric angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary part of the dielectric function. [ABSTRACT FROM AUTHOR]

Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb2S3 emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and near‐infrared. Controlling the local and reversible phase transition in this material is of major importance for future applications, and an appealing method to do so is to exploit pulsed lasers. Yet, the physics and limits involved in the optical switching of Sb2S3 are not yet well understood. Here, the reversible laser‐induced phase transition of Sb2S3 is investigated, focusing specifically on the mechanisms that drive the optically induced amorphization, with multi‐physics considerations including the optical and thermal properties of the PCM and its environment. The laser energy threshold for reversibly changing the phase of the PCM is determined through both theoretical analysis and experimental investigation, not only between fully amorphous and crystalline states but also between partially recrystallized states. Then, the non‐negligible impact of the material's polycrystallinity and anisotropy on the power thresholds for optical switching is revealed. Finally, the challenges related to laser amorphization of thick Sb2S3 layers are addressed, as well as strategies to overcome them. These results enable a qualitative and quantitative understanding of the physics behind the optically‐induced reversible change of phase in Sb2S3 layers. [ABSTRACT FROM AUTHOR]

We report the first application of broadband time-resolved pump-probe ellipsometry to study the ultrafast dynamics of the photoinduced insulator-to-metal transition (IMT) in vanadium dioxide (VO 2 ) thin films driven by 35 fs laser pulses. This novel technique enables the direct measurement of the time-resolved evolution of the complex pseudodielectric function of VO 2 during the IMT. We have identified distinct thermal and nonthermal dynamics in the photoinduced IMT, which critically depends on the pump wavelength and fluence, while providing a detailed temporal and spectral phase map. A comparison of the pseudodielectric function of the VO 2 thin film during thermally and photoinduced phase transitions reveals that the primary differences in the IMT pathways occur within the first picosecond after the pump, driven by nonequilibrium dynamics in this ultrafast time scale. The ultrafast spectroscopic ellipsometry introduced in this work offers a complementary probe to study phase changes in condensed matter and emerging photonic device materials., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)