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10 results on '"European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016)"'

1. Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot

Author

Romain Maurand, Yann-Michel Niquet, Louis Hutin, Xavier Jehl, Benoit Bertrand, Vincent P. Michal, Matias Urdampilleta, Marc Sanquer, Maud Vinet, R. Ezzouch, Tristan Meunier, A. Apra, Simon Zihlmann, Silvano De Franceschi, Jing Li, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Modélisation et Exploration des Matériaux (MEM), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Circuits électroniques quantiques Alpes (QuantECA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), acknowledges support from an Early Postdoc.Mobility fellowship (P2BSP2_184387) from the Swiss National Science Foundation, ANR-18-CE47-0007,MAQSi,Modélisation des bits quantiques silicium(2018), ANR-17-CE24-0009,CMOSQSPIN,Calcul quantique à base de spins électroniques uniques dans une technologie silicium compatible CMOS(2017), European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), European Project: 759388 ,LONGSPIN, European Project: 810504,QUCUBE, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Circuits électroniques quantiques Alpes (NEEL - QuantECA)

Subjects
Coupling, Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Silicon, business.industry, FOS: Physical sciences, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry, Qubit, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Optoelectronics, 010306 general physics, 0210 nano-technology, business, Reflectometry, Spectroscopy, Electric dipole spin resonance, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Spin-½, Quantum computer
Abstract

International audience; Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In view of this, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first gigahertz-frequency tone drives electric dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz ) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g factors and tunnel and spin-orbit couplings for both even and odd occupation.

Published
2021
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2. Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Author

Geoff Smithson, Lisa Ibberson, Sylvain Barraud, J. A. Haigh, M. Fernando Gonzalez-Zalba, David J. Ibberson, University of Bristol [Bristol], Hitachi Cambridge Laboratory [University of Cambridge], University of Cambridge [UK] (CAM)-Hitachi, Ltd, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Winton Programme of the Physics of Sustainability, Bristol Quantum Engineering Centre for Doctoral Training, EPSRC [EP/L015730/1], European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), and Hitachi, Ltd-University of Cambridge [UK] (CAM)

Subjects
Physics and Astronomy (miscellaneous), FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, Capacitance, Resonator, QETLabs, [SPI]Engineering Sciences [physics], Parasitic capacitance, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Sensitivity (control systems), Electrical tuning, 010302 applied physics, Physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, 021001 nanoscience & nanotechnology, Coupling (probability), Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Optoelectronics, Equivalent circuit, 0210 nano-technology, business, Varicap
Abstract

We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To assess the impact on performance of different tuning conditions, we connect a quantum dot in a silicon nanowire field-effect transistor to the resonator, and measure changes in the device capacitance caused by cyclic electron tunneling. At 250 mK, we obtain an equivalent charge sensitivity of $43~\mu e / \sqrt{\text{Hz}}$ when the resonator and the line are impedance-matched and show that this sensitivity can be further improved to $31~\mu e / \sqrt{\text{Hz}}$ by re-tuning the resonator. We understand this improvement by using an equivalent circuit model and demonstrate that for maximum sensitivity to capacitance changes, in addition to impedance matching, a high-quality resonator with low parasitic capacitance is desired., Comment: Includes supplementary information

Published
2019
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3. Si MOS technology for spin-based quantum computing

Author

Benoit Bertrand, S. De Franceschi, X. Jeh, Matias Urdampilleta, S. Barraud, A. Crippa, Christopher Bäuerle, M. Sanquer, Y.-J. Kim, Romain Maurand, Yann-Michel Niquet, A. Amisse, M. Vinet, L. Bourdet, H. Bohuslavskyi, Tristan Meunier, Louis Hutin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Circuits électroniques quantiques Alpes (NEEL - QuantECA), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), ANR-15-IDEX02, European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), Circuits électroniques quantiques Alpes (QuantECA ), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, business.industry, Physics::Instrumentation and Detectors, Nanowire, Silicon on insulator, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Magnetic field, Computer Science::Emerging Technologies, Quantum dot, Qubit, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 010306 general physics, 0210 nano-technology, business, Spin (physics), Quantum, Quantum computer
Abstract

International audience; We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics.

Published
2018
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4. Radio-Frequency Capacitive Gate-Based Sensing

Author

Chang-Min Lee, Imtiaz Ahmed, Sylvain Barraud, J. A. Haigh, John J. L. Morton, Yi Zhu, M. Fernando Gonzalez-Zalba, Alessandro Rossi, Simon Schaal, Mario Amado, Jason W. A. Robinson, Cavendish Laboratory, University of Cambridge [UK] (CAM), Hitachi Cambridge Laboratory [University of Cambridge], Hitachi, Ltd-University of Cambridge [UK] (CAM), London Centre for Nanotechnology, University College of London [London] (UCL), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Department of Materials Science and Metallurgy [Cambridge University] (DMSM), European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), European Project: 0732894(2007), European Project: 654712,H2020,H2020-MSCA-IF-2014,SINHOPSI, and University of Cambridge [UK] (CAM)-Hitachi, Ltd

Subjects
Materials science, Capacitive sensing, FOS: Physical sciences, General Physics and Astronomy, Hardware_PERFORMANCEANDRELIABILITY, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, law.invention, Resonator, [SPI]Engineering Sciences [physics], Hardware_GENERAL, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Quantum information, 010306 general physics, QC, Quantum computer, Quantum Physics, business.industry, Transistor, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Semiconductor, Quantum dot, Optoelectronics, Radio frequency, Quantum Physics (quant-ph), 0210 nano-technology, business
Abstract

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $\mu$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $\mu$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.

Published
2018
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5. Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

Author

M. F. Gonzalez-Zalba, John J. L. Morton, S. Barraud, Simon Schaal, London Centre for Nanotechnology, University College of London [London] (UCL), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Hitachi Cambridge Laboratory [University of Cambridge], University of Cambridge [UK] (CAM)-Hitachi, Ltd, European Project: 318397,EC:FP7:ICT,FP7-ICT-2011-8,TOLOP(2012), European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), and Hitachi, Ltd-University of Cambridge [UK] (CAM)

Subjects
General Physics and Astronomy, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, Memory cell, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Quantum computer, Electronic circuit, Physics, business.industry, Transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Chip, CMOS, Quantum dot, Qubit, Optoelectronics, 0210 nano-technology, business, Hardware_LOGICDESIGN
Abstract

International audience; Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element LC resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of $\delta$$q$ = 95 × 10$^{−6} e$ Hz$^{-1/2}$ when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

Published
2018
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6. Strain-Induced Spin-Resonance Shifts in Silicon Devices

Author

Thomas Schenkel, Andrea Morello, Audrey Bienfait, Patrice Bertet, Zaiping Zeng, J. Mansir, Jarryd J. Pla, Fahd A. Mohiyaddin, John J. L. Morton, Giuseppe Pica, Yann-Michel Niquet, School of Electrical Engineering and Telecommunications (UNSW), University of New South Wales [Sydney] (UNSW), Quantronics Group (QUANTRONICS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Istituto Italiano di Tecnologia (IIT), London Centre for Nanotechnology, University College of London [London] (UCL), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Lawrence Berkeley National Laboratory [Berkeley] (LBNL), ANR-15-CE30-0022,QIPSE,Information Quantique avec des Ensembles de Spins(2015), European Project: 615767,EC:FP7:ERC,ERC-2013-CoG,CIRQUSS(2014), European Project: 279781,EC:FP7:ERC,ERC-2011-StG_20101014,ASCENT(2011), European Project: 630070,EC:FP7:PEOPLE,FP7-PEOPLE-2013-IIF,QURAM, European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Silicon, General Physics and Astronomy, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, law.invention, Resonator, Condensed Matter::Materials Science, Engineering, law, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 010306 general physics, Electron paramagnetic resonance, Hyperfine structure, Spin-½, [PHYS]Physics [physics], Quantum Physics, Condensed matter physics, Spins, Condensed Matter - Mesoscale and Nanoscale Physics, Relaxation (NMR), Resonance, 021001 nanoscience & nanotechnology, chemistry, Physical Sciences, 0210 nano-technology, Quantum Physics (quant-ph)
Abstract

International audience; In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Published
2018
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7. 99.992 % $^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Author

B. Bertrand, Jean-Michel Hartmann, A. D. Bulanov, M. F. Churbanov, Marc Sanquer, V. Mazzocchi, M. N. Drozdov, Jean-Paul Barnes, Petr G. Sennikov, Louis Hutin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016)

Subjects
Materials science, Silicon, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Epitaxy, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Isotopes of silicon, Quantum computer, 010302 applied physics, Condensed Matter - Materials Science, Spins, Dopant, business.industry, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Quantum technology, chemistry, Quantum dot, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using a state-of-the-art 300 mm Si CMOS-foundries equipment and processes, Comment: 7 pages, 7 figures

Published
2018
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8. Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

Author

Benoit Bertrand, S. De Franceschi, Matias Urdampilleta, T. Meunier, M. Sanquer, Romain Maurand, Xavier Jehl, Louis Hutin, M. Vinet, Christopher Bäuerle, H. Bohuslavskyi, Baptiste Jadot, S. Barraud, Circuits électroniques quantiques Alpes (NEEL - QuantECA), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), and Circuits électroniques quantiques Alpes (QuantECA )

Subjects
Physics, [PHYS]Physics [physics], Spin states, Physics::Instrumentation and Detectors, business.industry, Detector, Electrical engineering, Charge (physics), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Quantum dot, Qubit, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Spin-½, Quantum computer
Abstract

We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

Published
2017
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9. Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

Author

Mansir, J., Conti, P., Zeng, Z., Pla, J., Bertet, P., Swift, M., van de Walle, C., Thewalt, M. l. w., Sklenard, B., Niquet, Y., Morton, J. j., London Centre for Nanotechnology, University College of London [London] (UCL), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of New South Wales [Sydney] (UNSW), Quantronics Group (QUANTRONICS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, University of California [Santa Barbara] (UC Santa Barbara), University of California (UC), University of Northern British Columbia [Prince George] (UNBC), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ANR-15-CE30-0022,QIPSE,Information Quantique avec des Ensembles de Spins(2015), European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), European Project: 279781,EC:FP7:ERC,ERC-2011-StG_20101014,ASCENT(2011), European Project: 615767,EC:FP7:ERC,ERC-2013-CoG,CIRQUSS(2014), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), University of California [Santa Barbara] (UCSB), and University of California

Subjects
[PHYS]Physics [physics], Quantum Physics, Condensed Matter::Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, Quantum Physics (quant-ph)
Abstract

International audience; We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains |$\varepsilon$| < 10$^{−5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nano-structures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning-shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10$^{−6}-$as well as opportunities for coupling to mechanical resonators.

Published
2017
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10. Phonon-blocked junction refrigerators for cryogenic quantum devices

Author

P.-O. Chapuis, Mika Prunnila, Alberto Ronzani, A. Kemppinen, J. S. Lehtinen, A. Alkurdi, Emma Mykkänen, VTT Technical Research Centre of Finland (VTT), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Academy of Finland projects QuMOS (288907,287768) and ETHEC (322580). This work was performed as part of the Academy of Finland Centre of Excellence program (312294)., European Project: 766853,H2020-FETOPEN-1-2016-2017,EFINED(2018), European Project: 688539,H2020,H2020-ICT-2015,MOS-QUITO(2016), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Cryostat, Quantum Physics, Materials science, Field (physics), cooling, business.industry, Phonon, FOS: Physical sciences, Refrigeration, Cryogenics, Quantum devices, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 7. Clean energy, performance evaluation, Quantum technology, junctions, cryogenics, Condensed Matter::Superconductivity, Miniaturization, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Optoelectronics, Quantum Physics (quant-ph), business, refrigerators, electron devices
Abstract

Refrigeration is an important enabler for quantum technology. The very low energy of the fundamental excitations typically utilized in quantum technology devices and systems requires temperature well below 1 K. Expensive cryostats are utilized in reaching sub-1 K regime and solid-state cooling solutions would revolutionize the field. New electronic micro-coolers based on phonon-blocked semiconductor-superconductor junctions could provide a viable route to such miniaturization. Here, we investigate the performance limits of these junction refrigerators., 5 pages, 3 figures, published in 2020 International Electron Devices Meeting (IEDM)

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