1. Mapping Inversion Domain Boundaries along Single GaN Wires with Bragg Coherent X-ray Imaging
- Author
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Jerome Carnis, Joël Eymery, Maxime Dupraz, Guillaume Beutier, Marie-Ingrid Richard, Vincent Favre-Nicolin, Tobias U. Schülli, Ni Li, Olivier P. Thomas, Thomas W. Cornelius, Stéphane Labat, Steven J. Leake, Marc Verdier, Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Deutsches Elektronen-Synchrotron [Hamburg] (DESY), Science et Ingénierie des Matériaux et Procédés (SIMaP), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), ANR-11-BS10-0014,MecaNIX,MecaNIX : Mécanique des Nano-objets étudiée In situ par diffraction X: étude in situ des déformations et des défauts (diffraction cohérente des rayons X) au cours d'un chargement mécanique (AFM)(2011), European Project: 8818823(1989), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
- Subjects
Diffraction ,Materials science ,inversion domain boundary ,General Physics and Astronomy ,Gallium nitride ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Planar ,polarity ,General Materials Science ,Image resolution ,business.industry ,GaN wires ,General Engineering ,X-ray ,Inversion (meteorology) ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,displacement field ,ddc:540 ,Displacement field ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,coherent X-ray Bragg imaging ,0210 nano-technology ,business - Abstract
ACS nano 14(8), 10305-10312 (2020). doi:10.1021/acsnano.0c03775, Gallium nitride (GaN) is of technological importance for a wide variety of optoelectronic applications. Defects in GaN, like inversion domain boundaries (IDBs), significantly affect the electrical and optical properties of the material. We report, here, on the structural configurations of planar inversion domain boundaries inside n-doped GaN wires measured by Bragg coherent X-ray diffraction imaging. Different complex domain configurations are revealed along the wires with a 9 nm in-plane spatial resolution. We demonstrate that the IDBs change their direction of propagation along the wires, promoting Ga-terminated domains and stabilizing into {11̅00}, that is, m-planes. The atomic phase shift between the Ga- and N-terminated domains was extracted using phase-retrieval algorithms, revealing an evolution of the out-of-plane displacement (∼5 pm, at maximum) between inversion domains along the wires. This work provides an accurate inner view of planar defects inside small crystals., Published by Soc., Washington, DC
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- 2020
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