1. XPS study of the oxidation of nanosize Ni/Si(100) films
- Author
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V. A. Terekhov, A. S. Lenshin, Stanislav V. Ryabtsev, A. T. Kazakov, F. M. Chernyshov, E. P. Domashevskaya, and A. V. Sidashov
- Subjects
Thermal oxidation ,Materials science ,Silicon ,Nickel oxide ,Inorganic chemistry ,Oxide ,chemistry.chemical_element ,Sputter deposition ,Inorganic Chemistry ,chemistry.chemical_compound ,Nickel ,chemistry ,Chemical engineering ,X-ray photoelectron spectroscopy ,Silicide ,Materials Chemistry ,Physical and Theoretical Chemistry - Abstract
The XPS (X-ray photoelectron spectroscopy) study of nickel oxide nanolayers obtained by magnetron sputtering of the metal and its subsequent oxidation in air at different temperatures (400°C and 1000°C) was performed. Silicon(100) was used as a substrate. Surface of the initial Ni/Si structure was shown to contain not only Ni metal, but also the NiO oxide. Annealing at 400°C results in a complete oxidation of the metal film. At a high-temperature annealing (1000°C), nickel interacts both with oxygen and silicon substrate to form NiSi silicide and a composite Ni-Si-O phase in transition layer. Electronconductivity of NiO films is determined by intercrystallite barriers. Activation energies of film electroconductivity in model gases (O2, Ar, H2) were found.
- Published
- 2011
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