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The field of strongly coupled photon-matter systems aims to create novel hybrid phases that enhance or modify material properties. A key challenge has been developing versatile platforms for exploring cavity quantum electrodynamics (QED) of quantum materials. Here, we demonstrate and probe ultrastrong light-matter coupling in atomically-thin van der Waals materials. We developed a broadband time-domain microscope that integrates exfoliated, dual-gated, two-dimensional quantum materials with sub-wavelength photon confinement at terahertz frequencies. Using bilayer graphene as a model system, we perform spectroscopic studies across a wide range of frequencies and gate voltages. For the first time, we measure the field-tunable band gap of bilayer graphene at terahertz frequencies while simultaneously observing clear signatures of ultrastrong coupling, with interaction strengths exceeding $\Omega/\omega\approx 40\%$. Our work bridges the gap between theoretical predictions and experimental implementation of cavity QED in van der Waals materials, paving the way for further studies of exotic phases and novel light-matter states.

We study the performance of an hot-electron bolometer (HEB) operating at THz frequencies based on superconducting niobium nitride films. We report on the voltage response of the detector over a large optical bandwidth carried out with different THz sources. We show that the impulse response of the fully packaged HEB at 7.5 K has a 3 dB cut-off around 2 GHz. Remarkably, detection capability is still observed above 30 GHz in an heterodyne beating experiment using a THz quantum cascade laser frequency comb. Additionally, the HEB sensitivity has been evaluated and an optical noise equivalent power NEP of 0.8 pW/sqrt(Hz) has been measured at 1 MHz.

Full phase control of THz emitting quantum cascade laser (QCL) combs has recently been demonstrated, opening new perspectives for even the most demanding applications. In this framework, simplifying the set-ups for control of these devices will help to accelerate their spreading in many fields. We report a new way to control the emission frequencies of a THz QCL comb by small optical frequency tuning (SOFT), using a very simple experimental setup, exploiting the incoherent emission of an ordinary white light emitting diode. The slightly perturbative regime accessible in these condition allows tweaking the complex refractive index of the semiconductor without destabilizing the broadband laser gain. The SOFT actuator is characterized and compared to another actuator, the QCL driving current. The suitability of this additional degree of freedom for frequency and phase stabilization of a THz QCL comb is shown and perspectives are discussed.

The gain recovery time of a heterogeneous active region terahertz quantum cascade laser is studied by terahertz-pump,i terahertz-probe spectroscopy. The investigated active region, which is based on a bound-to-continuum optical transition with an optical phonon assisted extraction, exhibits a gain recovery time in the range of 34$\,$-$\,$50$\,$ps dependent on the operation condition of the laser. The recovery time gets shorter for stronger pumping of the laser while the recovery dynamics slows down with increasing operation temperature. These results indicate the important role of the intracavity light intensity for the fast gain recovery.

We report the theoretical investigation of the disorder effects on the bulk states of inverted InAs/GaSb quantum wells. As disorder sources we consider the interface roughness and donors/acceptors supplied by intentional doping. We use a $\bm{k}\cdot\bm{p}$ approach combined with a numerical diagonalization of the disordered Hamiltonian to get a full insight of the disordered eigenenergies and eigenfunctions of the electronic system. While interface roughness slightly pertubs the carrier motion, we show that dopants strongly bind and localize the bulk states of the structure. Moreover, both types of scatterers strengthen the intrinsic hybridization between holes and electrons in the structure.

A room-temperature mid-infrared (9 um) heterodyne system based on high-performance unipolar optoelectronic devices is presented. The local oscillator (LO) is a quantum cascade laser, while the receiver is an antenna coupled quantum well infrared photodetector optimized to operate in a microcavity configuration. Measurements of the saturation intensity show that these receivers have a linear response up to very high optical power, an essential feature for heterodyne detection. By an accurate passive stabilization of the local oscillator and minimizing the optical feed-back the system reaches, at room temperature, a record value of noise equivalent power of 30 pW at 9um. Finally, it is demonstrated that the injection of microwave signal into our receivers shifts the heterodyne beating over the bandwidth of the devices. This mixing property is a unique valuable function of these devices for signal treatment.

n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights., Comment: 5 pages, 5 figures

We present a two-quantum well THz intersubband laser operating up to 192 K. The structure has been optimized with a non-equilibrium Green's function model. The result of this optimization was confirmed experimentally by growing, processing and measuring a number of proposed designs. At high temperature (T>200 K), the simulations indicate that lasing fails due to a combination of electron-electron scattering, thermal backfilling, and, most importantly, re-absorption coming from broadened states., Comment: Main article: 5 pages, 5 figures

Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime.

We analyze the peculiar case where the free carrier absorption arising from LO phonon absorption-assisted transitions becomes negative and therefore turns into a gain source for quantum cascade lasers. Such an additional source of gain exists when the ratio between the electronic and the lattice temperatures is larger than one, a condition that is usually fulfilled in quantum cascade lasers. We find a gain of few cm$^{-1}$'s at 200K. We report the development of a terahertz quantum cascade laser operating in the negative free carrier absorption regime.

We report on the operation of a double metal waveguide far-infrared quantum cascade laser emitting at 28 $\mu$m, corresponding to the AlAs-like phonon Reststrahlen band. To avoid absorption by AlAs-like optical phonons, the Al-free group-V alloy GaAs$_{0.51}$Sb$_{0.49}$ is used as a barrier layer in the bound-to-continuum based active region. Lasing occurs at a wavelength of 28.3 $\mu$m, which is the longest wavelength among the quantum cascade lasers operating from mid-infrared to far-infrared. The threshold current density at 50 K is 5.5 kA/cm$^{2}$ and maximum operation temperature is 175 K. We also discuss the feasibility that operation wavelength cover the whole spectral range bridging between mid-infrared and terahertz by choosing suited group III-V materials., Comment: 12 pages, 4 figures

Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $\Gamma$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression., Comment: 10 pages, 4 figures

We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain., Comment: 9 pages, 8 figures

High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 {\mu}m. The active region was dry etched before being regrown with semi-insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550{\mu}m, were identified as slow Bloch photonic crystal modes by means of three-dimensional photonic simulations and measurements.

A superconducting metasurface operating in the THz range and based on the complementary metamaterial approach is discussed. Experimental measurements as a function of temperature and magnetic field display a modulation of the metasurface with a change in transmission amplitude and frequency of the resonant features. Such a metasurface is successively used as a resonator for a cavity quantum electrodynamic experiment displaying ultrastrong coupling to the cyclotron transition of a 2DEG. A finite element modeling is developed and its results are in good agreement with the experimental data. In this system a normalized coupling ratio of $\frac{\Omega}{\omega_c}=0.27$ is measured and a clear modulation of the polaritonic states as a function of the temperature is observed.

We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature. The emission is attributed to the electric field confined along the shortest lateral dimension of the dashes, as confirmed by its dependence on crystallographic orientation both in absorption measurements on a dedicated sample and from electroluminescence itself. From the absorption we estimate a dipole moment for the observed transition of =1.7 nm. The electroluminescence is peaked at around 110 meV and increases with applied bias. Its temperature dependence shows a decrease at higher temperatures limited by optical phonon emission., Comment: 15 pages, 4 figures, submitted to Applied Physics Letters

We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the dot. The resonator frequency is found to shift both down and up close to conductance resonance of the dot corresponding to a change of sign of the reactance of the system from capacitive to inductive. The observations are consistent with a scattering matrix model. The sign of the reactance depends on the detuning of the dot from conductance resonance and on the magnitude of the tunnel rate to the lead with respect to the resonator frequency. Inductive response is observed on a conductance resonance, when tunnel coupling and temperature are sufficiently small compared to the resonator frequency., Comment: 8 pages, 4 figures

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.

We report the observation of a coherent multimode instability in quantum cascade lasers (QCLs), which is driven by the same fundamental mechanism of Rabi oscillations as the elusive Risken-Nummedal-Graham-Haken (RNGH) instability predicted 40 years ago for ring lasers. The threshold of the observed instability is significantly lower than in the original RNGH instability, which we attribute to saturable-absorption nonlinearity in the laser. Coherent effects, which cannot be reproduced by standard laser rate equations, can play therefore a key role in the multimode dynamics of QCLs, and in lasers with fast gain recovery in general., Comment: 5 pages, 4 figures

We investigate a beam splitter experiment implemented in a normal conducting fermionic electron gas in the quantum Hall regime. The cross-correlations between the current fluctuations in the two exit leads of the three terminal device are found to be negative, zero or even positive depending on the scattering mechanism within the device. Reversal of the cross-correlations sign occurs due to interaction between different edge-states and does not reflect the statistics of the fermionic particles which `antibunch'., Comment: 4 pages, 4 figures

Mid-infrared semiconductor lasers have emerged as indispensable compact coherent sources for military and commercial applications. While much of the historical emphasis has been on maximizing the output power and/or spectral purity, a recent new focus has been on engineering these lasers to operate as optical frequency combs (OFCs) for broadband real-time spectroscopy. In particular, the combination of low-drive-power and broad gain bandwidth has made interband cascade laser (ICL) OFCs an attractive complement to quantum cascade laser OFCs operating at longer wavelengths. Moreover, ICL combs can potentially be incorporated into fully-integrated dual-comb spectrometers that employ fast, room-temperature IC photodetectors processed on the same chip.However, the high refractive index of the ICL’s GaSb substrate poses some challenges to the optical waveguiding. Because the modal index is considerably lower than that of the substrate, the optical field can penetrate the bottom cladding layer and leak into the GaSb, inducing wavelength-dependent interference that modifies the gain and group velocity dispersion (GVD) profiles. Even when the effect on lasing threshold is small, the comb properties can be adversely affected. Using the sub-threshold Fourier transform technique, we studied ICL combs with various ridge widths, substrate thicknesses, and center wavelengths. This allowed us to evaluate the effects of modal leakage on the GVD. We find that the resonant nature of the substrate modes induces oscillations, which affect both the spectral bandwidth and the phase-locking properties above threshold. Strategies to mitigate the GVD’s undesired and unpredictable spectral variation will be presented.