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The temperature dependent thermal conductivity of In-Sb-Te thin films has been measured by modulated photothermal radiometry in the 20-550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in-situ Raman spectra. The data suggest that the as-deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Abstract: We report on the bubbler-type MOCVD growth of Ge x Sb y Te z (GST) on SiO2/Si substrates, potentially transferable to phase change memory (PCM) devices. Pure nitrogen was used as the process gas in order to reduce toxicity whilst increasing the simplicity of the process. This systematic study allowed the modification of the growth parameters on SiO2 to move through initial sub-micrometric crystalline grain deposition on to lateral island growth. Temperature was observed to play a critical role in film quality with strong morphology and island shape/size changes for small thermal variations. Eventually, continuous layers of GST in the hcp phase and composition close to the 2:2:5 were studied. The deposition on different substrates was also investigated. Although crystal nucleation is still far from achieving the target step coverage required for uniform coating of patterned substrates, the electrical sheet resistance of GST films exhibited values corresponding to those expected for chalcogenide materials suitable to be integrated into PCM devices. [Copyright &y& Elsevier]

The increasing structural complexity and downscaling of modern nanodevices require continuous development of structural characterization techniques that support R&D and manufacturing processes. This work explores the capability of laboratory characterization of periodic planar nanostructures using 3D X-ray standing waves as a promising method for reconstructing atomic profiles of planar nanostructures. The non-destructive nature of this metrology technique makes it highly versatile and particularly suitable for studying various types of samples. Moreover, it eliminates the need for additional sample preparation before use and can achieve sub-nanometre reconstruction resolution using widely available laboratory setups, as demonstrated on a diffractometer equipped with a microfocus X-ray tube with a copper anode., (© Ksenia Matveevskii et al. 2024.)

The blur caused by the nonzero mean free path of electrons in photoresists exposed by extreme ultraviolet lithography has detrimental consequences on patterning resolution, but its effect is difficult to quantify experimentally. So far, most mean free path calculations use the dielectric formalism, which is an approximation valid in the optical limit and fails at low kinetic energy. In this work, we used a modified substrate-overlayer technique that exploited the attenuation of the Si 2p core level originating specifically from the native silicon dioxide to evaluate the attenuation of electrons traveling through 2 and 4 nm of photoresist overlayers to provide a close estimation of the inelastic mean free path relevant for photoresist lithography patterning and for electron microscopy. The photoemission spectra were collected in the proximity of the Si 2p edge (binding energy ∼101 eV) using synchrotron light of energy ℏω ranging between 120 and 550 eV. The photoresist films were prototypical chemically amplified resists based on organic copolymer of poly hydroxystyrene and tertbutyl methacrylate with and without triphenyl sulfonium perfluoro-1-butanesufonate photoacid generator and trioctylamine quencher. The inelastic mean free path of electrons, in the range that is relevant for photoresist exposure in extreme ultraviolet lithography (20-92 eV), was found to be between 1 and 2 nm. At higher kinetic energy, the mean free path increased, consistently with the well-known behavior. The presence of the photoacid generator and quencher did not change the mean free path, within experimental error. Our results are discussed and compared with the existing literature on organic molecules measured via dielectric formalism and electron transmission experiments.

We report on the near edge x-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet (EUV) and electron beam lithography. The experiments were conducted using a scanning transmission x-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (∼290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remained and formed undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for EUV lithography.

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V., (© 2012 American Chemical Society)