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We show that SiGe islands are transformed into nanoholes and rings by annealing treatments only and without Si capping. Rings are produced by a rapid flash heating at temperatures higher than the melting point of Ge, whereas nanoholes are produced by several minute annealing. The rings are markedly rich in Si with respect to the pristine islands, suggesting that the evolution path from islands to rings is driven by the selective dissolution of Ge occurring at high temperature.

The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to nanofabrication. To bring to fruition their full potential for actual applications, individual nanostructures need to be combined into ordered patterns in which the location of each single unit is coupled with others and the surrounding environment. Within the Ge/Si model system, we analyze a number of examples of bottom-up strategies in which the shape, positioning, and actual growth mode of epitaxial nanostructures are tailored by manipulating the intrinsic physical processes of heteroepitaxy. The possibility of controlling elastic interactions and, hence, the configuration of self-assembled quantum dots by modulating surface orientation with the miscut angle is discussed. We focus on the use of atomic steps and step bunching as natural templates for nanodot clustering. Then, we consider several different patterning techniques which allow one to harness the natural self-organization dynamics of the system, such as: scanning tunneling nanolithography, focused ion beam and nanoindentation patterning. By analyzing the evolution of the dot assembly by scanning probe microscopy, we follow the pathway which leads to lateral ordering, discussing the thermodynamic and kinetic effects involved in selective nucleation on patterned substrates.

Semiconductor epitaxial nanostructures have been recently proposed as the key building blocks of many innovative applications in materials science and technology. To bring their tremendous potential to fruition, a fine control of nanostructure size and placement is necessary. We present a detailed investigation of the self-ordering process in the prototype case of Ge/Si heteroepitaxy. Starting from a bottom-up strategy (step-bunching instabilities), our analysis moves to lithographic techniques (scanning tunneling lithography, nanomechanical stamping, focused ion beam patterning) with the aim of developing a hybrid approach in which the exogenous intervention is specifically designed to suit and harness the natural self-organization dynamics of the system.

Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by atomic force microscopy and scanning electron microscopy. The nanoindents act as trapping sites, allowing ripening of Ge islands at those locations during subsequent deposition and diffusion of Ge on the surface. The results show that island ordering is intrinsically linked to the nucleation and growth at indented sites and it strongly depends on pattern parameters.

We have grown Ge dots by physical vapor deposition on step bunched Si(111), vicinal Si(100) and oxidized Si(100) surfaces. A control of their one- and two-dimensional ordering was achieved through the combination of top-down patterning techniques (Focused Ion Beam milling) and naturally occurring instabilities. We studied the growth kinetics and self-organization of the islands using Scanning Tunnelling Microscopy in UHV and Atomic Force Microscopy, and we used a software routine to analyze the in-plane ordering of the islands on selected images. We focused on the study of the first nucleation stages of the dots, and attempted to correlate the observed behavior with the properties of high-miscut vicinal Si(100) surfaces. The relevance of this research to quantum-dots based technology is discussed.

The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable structures for novel nanotechnological applications such as nanomemories, nanolasers and nanoelectronic devices. We have directly grown Ge QDs by physical vapour deposition (PVD) on Si(111), Si(100) and some of its vicinal surfaces and studied innovative bottom up techniques to order such nanostructures. Specifically, we harnessed naturally occurring instabilities due to reconstruction and intrinsic anisotropic diffusion in Si bare surfaces, such as step bunching and natural steps occurring in silicon vicinal surfaces, to order the QDs both in one dimension and in the plane. We have also shown the use of controlled quantities of surfactants, like Sb, dramatically improves the desired ordering. Moreover, we have assisted these self-assembling processes using top-down approaches like Focused Ion Beam (FIB) milling and STM nanoindentation to control the nucleation sites and the density of the Ge QDs. Real-time study of growth and selfassembly has been accomplished using Scanning Tunneling Microscopy imaging in UHV. An explanation of the occurring processes is given, and a software routine is used to quantify the ordering of the QDs both in pre-patterned and bare surfaces. Applications, mainly in the field of Nanocrystal Nonvolatile Memories, are discussed.

We explore the use of the pair distribution function to study the self-organization process of Ge quantum dots on both nanopatterned and nonpatterned oxidized Si(001) surfaces. Dots formation and ordering upon annealing of a Ge thin film are analyzed. The method we use is not limited to this case study. We show how it can be applied to determine short and long range self-ordering of nanostructures. We support our results by applying a software routine to simulate patterns of dots to finally spot the relevant physical aspects of Ge islands self-assembly.

Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for applications in the forecoming nanotechnology era. New frontiers in nanodevices technology rely on the precise positioning of the nucleation site and on controlling the shape and size of the dots. In this paper we will review some recent studies regarding the control of the nucleation process on semiconductor surfaces. After a brief review of the theory of free nucleation on surfaces and of the role of steps and defects, a few novel approaches to form ordered patterns on surfaces are explored: natural patterning induced by surface instabilities (as step bunching or step meandering), in situ substrate patterning by Scanning Tunneling Microscopy (STM), high resolution patterning by Focused Ion Beam (FIB). Growth of epitaxial layers of semiconductors (Ge/Si(100) or InAs/GaAs(100)) on these patterned surfaces has been studied by STM or Atomic Force Microscopy (AFM) unveiling the way in which the first atoms start to aggregate and identifying their exact nucleation site. Control of the dot size to match the patterning typical wavelength has been achieved by using surfactants on misoriented substrates. STM images acquired in real time allowed to identify the mechanism of Ge cluster formation on patterned Si(100), and to follow the island transition from pre-pyramid to pyramid. Nucleation of Ge islands on SiO2 layers has been obtained thanks to FIB tight patterning, achieving island densities of 3.5x10^10/cm^2.