1. Achieving Peta-Ohm Resistance for Semi-Insulating 4H-SiC Devices by Atomic Layer Deposition
- Author
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Xi, Yuying, Li, Helios Y., Li, Guohui, Su, Qingmei, Mao, Kaili, Xu, Bingshe, Hao, Yuying, Fang, Nicholas X., and Cui, Yanxia
- Subjects
Physics - Applied Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Growing demands for precise current measurements, such as atto-ampere-level measurement of cross-cellular biological current transduction, have spotlighted a pressing need for low-noise resistors with ultra-high resistance immune to voltage fluctuations. Traditional semi-insulating materials, however, struggle to provide consistent resistance across varying voltages. To bridge this gap, we introduce a design that integrates semi-insulating 4H-SiC with atomic-level metal oxide interlayers and electrodes. The strategic adjustment of surface states via atomic-scale metal oxide layers optimizes the work functions on 4H-SiC surfaces, validated through density functional theory simulations. This design transcends conventional limitations, establishing an ideal Ohmic behavior and maintains Peta-Ohm-level resistance, unaffected by voltage variations. These on-chip devices with fine-tuned resistance are compatible with integrated circuit manufacturing processes, making them ideally suited for applications in precision electronics.
- Published
- 2024