158 results on '"Fang, Y. Y."'
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2. Continuous Monitoring and the Source Identification of Carbon Dioxide at Three Sites in Northeast Asia During 2004–2005
3. High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates
4. Trismus, xerostomia and nutrition status in nasopharyngeal carcinoma survivors treated with radiation
5. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
6. The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition
7. Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition
8. Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)
9. Alcohol, coffee and tea intake and the risk of cognitive deficits: a dose–response meta-analysis
10. Genome-Based Drug Design
11. Percutaneous lidocaine for pediatric venipuncture
12. Origins of accessory small ring marker chromosomes derived from chromosome 1
13. Enhanced Drought and Osmotic Stress Tolerance in Transgenic Potato Plants Expressing AtCDPK1, a Calcium-Dependent Protein Kinase
14. Terahertz intersubband transition in GaN/AlGaN step quantum well.
15. Human papilloma virus infection in the healing thermal-burn wound in a child
16. Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition.
17. Precipitation in 25Cr20NiNbN austenitic steel after ageing at 750°C
18. Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating
19. Infrared intersubband absorption in nonpolar a-plane AlGaN/GaN multiple quantum wells
20. Trismus, xerostomia and nutrition status in nasopharyngeal carcinoma survivors treated with radiation
21. Human papilloma virus infection in the healing thermal‐burn wound in a child.
22. Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells
23. Highly strained metastable structures and selective area epitaxy of Ge-rich Ge 1− xSi x/Si(100) materials using nanoscale building blocks
24. Origins of accessory small ring marker chromosomes derived from chromosome I
25. Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD
26. Growth of High Quality AlN on Sapphire with Multi-Growth Approaches
27. Growth and properties of ZnO film grown on AlN buffer layer by PLD
28. The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD
29. The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer
30. The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition
31. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
32. High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition
33. The effects of growth temperature of AlN buffer layers ona-plane GaN grown onr-plane sapphire by MOCVD
34. The effects of V/III ratio on nonpolara-plane GaN films grown onr-plane sapphire by MOCVD
35. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
36. Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates
37. Continuously graded anisotropy in single (Fe53Pt47)100−xCux films
38. Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field
39. Thermal expansivity ofGe1−ySnyalloys
40. Direct absorption edge in GeSiSn alloys
41. Determination of tensile membrane effects by segment equilibrium
42. Improved magnetoresistance through spacer thickness optimization in tilted pseudo spin valves based on L10 (111)-oriented FePtCu fixed layers
43. Practical B and P doping via SixSnyGe1−x−y−zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior
44. Pseudo spin valves based on L1 (111)-oriented FePt fixed layers with tilted anisotropy
45. Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys
46. Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1−xSix/Si(100) materials using nanoscale building blocks
47. Synthesis and Fundamental Studies of Chlorinated Si−Ge Hydride Macromolecules for Strain Engineering and Selective-Area Epitaxial Applications
48. Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry
49. Photoresponse at 1.55 μm in GeSn epitaxial films grown on Si
50. Chemical routes to Ge∕Si(100) structures for low temperature Si-based semiconductor applications
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