335 results on '"Fang, Z-Q."'
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2. Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
3. Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces
4. Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location
5. Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy
6. Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC
7. Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN
8. Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates
9. Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate
10. Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy
11. Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation
12. Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
13. Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy
14. Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes
15. Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy
16. Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
17. Deep centers in undoped semi-insulating InP
18. First Report of Xanthomonas axonopodis pv. begoniae Causing Bacterial Leaf Spot on Rieger Begonias in Taiwan
19. Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers
20. Electron Irradiation Induced Trap in N-Type GaN
21. Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
22. Deep Level Transient Spectroscopy
23. Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs
24. effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs
25. Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs
26. Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures
27. The investigation of custom grown vertical zone melt semi-insulating bulk Gallium Arsenide as radiation spectrometer
28. Convenient determination of concentration and energy in deep-level transient spectroscopy
29. Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures
30. Photoquenching and thermal recovery of a thermally stimulated current peak in semi-insulating GaAs
31. Thermoelectric effect spectroscopy measurements on semi-insulating GaN
32. Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs
33. Excess dark current due to saw damage in semi-insulating GaAs
34. Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy
35. High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy
36. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS
37. Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
38. Characterization of deep centers in bulk n-type 4H–SiC
39. Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
40. Defects at oxygen plasma cleaned ZnO polar surfaces.
41. Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers.
42. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy.
43. Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes.
44. Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy.
45. Effects of annealing in N2 ambient on traps and persistent conduction in hydrothermally grown ZnO.
46. Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition.
47. Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC.
48. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy.
49. Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy.
50. Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy.
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