Search

In present paper, structures and properties of degradation products of polystyrene (PS) waste were characterized by gel permeation chromatography (GPC), thermogravimetric (TG) analysis, Fourier transform infrared (FT-IR) spectroscopy, gas chromatography-mass spectrometry (GC-MS), and thus the degradation conditions including temperature, time, and assistant type and dosage were investigated and optimized. It is suitable to use 1.0 wt% K2S2O8 as an assistant to degrade PS waste at 300°C for 24 h. Subsequently by sulfonation and neutralization reactions, the degraded PS was prepared into sodium polystyrene sulfonate (PSS), a common dispersant for coal‒water slurry (CWS). The performance of PSS with different molecular weights and sulfonation degrees was studied. Experimental results showed that the PSS with the sulfonation degree of more than 75%, prepared from the degraded PS having number average molecular weight (Mn) of about 9000, was appropriate for dispersion and stabilization of CWS suspensions. Additionally, compared with commercial dispersant NSF, the obtained PSS had a better performance for CWS. CWSs prepared with dispersant PSS exhibited pseudo-plastic or shear-thinning rheological behaviors. Combined with coal‒water slurry technology, a new approach is provided for resource utilization of PS waste. [ABSTRACT FROM AUTHOR]

Objective: This study aims to assess the clinical characteristics of sporotrichosis in low‐endemic areas of China, including the prevalence geography, genotypic traits of patients, clinical manifestations, and strain virulence and drug sensitivities. The objective is to improve the currently used clinical management strategies for sporotrichosis. Methods: Retrospective data were collected from patients diagnosed with sporotrichosis through fungal culture identification. The isolates from purified cultures underwent identification using CAL (Calmodulin) gene sequencing. Virulence of each strain was assessed using a Galleria mellonella (G. mellonella) larvae infection model. In vitro susceptibility testing against commonly used clinical antifungal agents for sporotrichosis was conducted following CLSI criteria. Results: In our low‐endemic region for sporotrichosis, the majority of cases (23) were observed in middle‐aged and elderly women with a history of trauma, with a higher incidence during winter and spring. All clinical isolates were identified as Sporothrix globosa (S. globosa). The G. mellonella larvae infection model indicated independent and dose‐dependent virulence among strains, with varying toxicity levels demonstrated by the degree of melanization of the G. mellonella. Surprisingly, lymphocutaneous types caused by S. globosa exhibited lower in vitro virulence but were more common in affected skin. In addition, all S.globosa strains displayed high resistances to fluconazole, while remaining highly susceptible to terbinafine, itraconazole and amphotericin B. Conclusion: Given the predominance of elderly women engaged in agricultural labour in our region, which is a low‐epidemic areas, they should be considered as crucial targets for sporotrichosis monitoring. S. globosa appears to be the sole causative agent locally. However, varying degrees of melanization in larvae were observed among these isolates, indicating a divergence in their virulence. Itraconazole, terbinafine and amphotericin B remain viable first‐line antifungal options for treating S.globosa infection. [ABSTRACT FROM AUTHOR]

In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer characteristic curves, it was found that the carrier mobility was reduced after proton irradiation. The analysis suggests that proton irradiation generates a large net positive charge in the gate oxide layer, which induces a negative drift in the Dirac voltage. Introducing defects and increased impurities at the gate oxide/graphene interface after proton irradiation resulted in enhanced Coulomb scattering and reduced mobility of the carriers, which in turn affects the Dirac sheet resistance and saturation current. After annealing at room temperature, the electrical characteristics of the devices were partially restored. The results of the technical computer-aided design (TCAD) simulation indicate that the reduction in carrier mobility is the main reason for the degradation of the electrical performance of the device. Monte Carlo simulations were conducted to determine the ionization and nonionization energy losses induced by proton incidence in top-gate GFET devices. The simulation data show that the ionization energy loss is the primary cause of the degradation of the electrical performance. [ABSTRACT FROM AUTHOR]