171 results on '"Ferain, Isabelle"'
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2. Surface activation using oxygen and nitrogen radical for Ge–Si Avalanche photodiode integration
3. Performance estimation of junctionless multigate transistors
4. Comparison of different surface orientation in narrow fin MuGFETs
5. Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs
6. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors
7. Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding
8. A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs
9. Mobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)
10. Methodogy for flatband voltage measurment in fully depleted floating-body FinFETs
11. Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion
12. Low-Temperature DirectWafer Bonding
13. Developing a Wafer Level Gold-Polysilicon Eutectic Bond Process to Protect Sensitive Electronic Devices
14. Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications
15. Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology
16. Strategies for Reducing Particle Defects in Ti and TiN Thin-Film Deposition Processes
17. Influence of channel material properties on performance of nanowire transistors.
18. Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation.
19. Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors.
20. Errata to “Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors” [Dec 12 3510-3518]
21. Trapping in 1nm EOT high-k/MG
22. Strain Characterization of Directly Bonded Germanium-to-Silicon Substrates
23. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors
24. Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
25. Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates
26. Electron transport in germanium junctionless nanowire transistors
27. The zero temperature coefficient in junctionless nanowire transistors
28. Foreword
29. Top-down process of Germanium nanowires using EBL exposure of Hydrogen Silsesquioxane resist
30. Intrinsic gate delay and energy-delay product in junctionless nanowire transistors
31. Random dopant variation in junctionless nanowire transistors
32. Junctionless Multiple-Gate Transistors for Analog Applications
33. Characterization of a junctionless diode
34. Investigation of high-performance sub-50nm junctionless nanowire transistors
35. Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions
36. The Roles of the Electric Field and the Density of Carriers in the Improved Output Conductance of Junctionless Nanowire Transistors
37. A Simulation Comparison between Junctionless and Inversion-Mode MuGFETs
38. Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs
39. Influence of Elastic and Inelastic Electron–Phonon Interaction on Quantum Transport in Multigate Silicon Nanowire MOSFETs
40. Improvement of carrier ballisticity in junctionless nanowire transistors
41. Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs
42. Chemical Reactions and Mechanical Properties of the Directly Bonded Ge-Si Interface
43. Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs
44. Fabrication of Germanium-on-Insulator by low temperature direct wafer bonding
45. Analog Operation and Harmonic Distortion Temperature Dependence of nMOS Junctionless Transistors
46. Characterization and Mechanical Reliability Evaluation of Gold Polysilicon Eutectic Bonded Wafers
47. Dissipative transport in Multigate silicon nanowire transistors
48. Mobility improvement in nanowire junctionless transistors by uniaxial strain
49. LDD and Back-Gate Engineering for Fully Depleted Planar SOI Transistors with Thin Buried Oxide
50. Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs
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