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Inverse oxide-metal model catalysts can show superior activity and selectivity compared with the traditional supported metal-oxide architecture, commonly attributed to the synergistic overlayer-support interaction. We have investigated the growth and redox properties of ceria nanoislands grown on Au(111) between 700 and 890 °C, which yields the CeO 2 -Au(111) model catalyst system. We have observed a distinct correlation between deposition temperature, structural order, and oxide composition through low-energy electron microscopy, low-energy electron diffraction, intensity-voltage curves, and X-ray absorption spectroscopy. Improved structural order and thermal stability of the oxide have been achieved by increasing the oxygen chemical potential at the substrate surface using reactive oxygen (O/O 2 ) instead of molecular O 2 during growth. In situ characterization under reducing (H 2 ) and oxidizing atmospheres (O 2 , CO 2 ) indicates an irreversible loss of structural order and redox activity at high reduction temperatures, while moderate temperatures result in partial decomposition of the ceria nanoislands (Ce 3+ /Ce 4+ ) to metallic cerium (Ce 0 ). The weak interaction between Au(111) and CeO x would facilitate its reduction to the Ce 0 metallic state, especially considering the comparatively strong interaction between Ce 0 and Au 0 . Besides, the higher reactivity of atomic oxygen promotes a stronger interaction between the gold and oxide islands during the nucleation process, explaining the improved stability. Thus, we propose that by driving the nucleation and growth of the ceria/Au system in a highly oxidizing regime, novel chemical properties can be obtained., Competing Interests: The authors declare no competing financial interest., (© 2025 The Authors. Published by American Chemical Society.)

Ultrathin atomic layer deposited ceria films (<20 nm) are capable of H 2 heterolytic activation at room temperature, undergoing a significant reduction regardless of the absolute pressure, as measured under in-situ conditions by near ambient pressure X-ray photoelectron spectroscopy. ALD-ceria can gradually reduce as a function of H 2 concentration under H 2 /O 2 environments, especially for diluted mixtures below 10 %. At room temperature, this reduction is limited to the surface region, where the hydroxylation of the ceria surface induces a charge transfer towards the ceria matrix, reducing Ce 4+ cations to Ce 3+ . Thus, ALD-ceria replicates the expected sensing mechanism of metal oxides at low temperatures without using any noble metal decorating the oxide surface to enhance H 2 dissociation. The intrinsic defects of the ALD deposit seem to play a crucial role since the post-annealing process capable of healing these defects leads to decreased film reactivity. The sensing behavior was successfully demonstrated in sensor test structures by resistance changes towards low concentrations of H 2 at low operating temperatures without using noble metals. These promising results call for combining ALD-ceria with more conductive metal oxides, taking advantage of the charge transfer at the interface and thus modifying the depletion layer formed at the heterojunction., (© 2025 The Author(s). ChemSusChem published by Wiley-VCH GmbH.)

Over the last few years, the influence of low temperature (≤80 °C) and, in particular, of room temperature, atomic layer deposited alumina (ALD-Al 2 O 3 ) on the properties of the underlying hybrid perovskites of different compositions and on the efficiency and stability of the corresponding perovskite solar cells (PSCs) is extensively investigated. The main conclusion is that most probably thanks to the presence of intrinsic defect states in the ALD-Al 2 O 3 and in the perovskite layers, charge transfer and neutralization are possible and the entire lifetime of the PSCs is thus improved. Moreover, the migration of mobile ions between the layers is blocked by the ALD-Al 2 O 3 layer and thus the occurrence of hysteresis in the current density-voltage characteristics of the PSCs is suppressed. Considering the uniform and nondestructive surface coverage, low thermal budget, small amount of material required, and short duration of the established ALD-Al 2 O 3 deposition on top of hybrid perovskites, this additional, but fully solar cell technology-compatible, process step is most likely the most effective, cheapest, and fastest way to improve the efficiency and long-term stability of PSCs and thus increase their marketability., (© 2024 The Author(s). Small published by Wiley‐VCH GmbH.)

Copper oxide (CuO x ) has been announced as a very promising hole-transporting layer for perovskite solar cells. However, in our previous work, we have shown that once a formamidinium lead triiodide (FAPI) perovskite is spin-coated on a spray-coated cuprous oxide (Cu 2 O) substrate, the Cu 2 O diffuses into and reacts with the FAPI film. In order to verify if the degradation products are related to the oxidation state of CuO x and/or its preparation method, in this work, we first prepared CuO x films by thermal oxidation at temperatures ranging from 120 to 300 °C. While increasing the process temperature, a transformation from copper I (Cu 2 O) to copper II (CuO) oxidation states was observed. For both oxidation states of copper, FAPI perovskite degradation was found; however, some alterations in the reaction products were noticed. In contrast to our expectations, the introduction of an ultrathin plasma-enhanced atomic layer deposited Al 2 O 3 layer in between both films only partially blocked the CuO x migration into the FAPI film. It can be concluded that regardless of the chemical composition and/or preparation method of CuO x , the overlayered FAPI film gets decomposed. In order to use CuO x as a hole-transporting layer in solar cells, new strategies must be developed to limit these unwanted chemical reactions.

Understanding the interactions in hybrid systems based on graphene and functional oxides is crucial to the applicability of graphene in real devices. Here, we present a study of the structural defects occurring on graphene during the early stages of the growth of CoO, tailored by the electronic coupling between graphene and the substrate in which it is supported: as received pristine graphene on polycrystalline copper (coupled), cleaned in ultra-high vacuum conditions to remove oxygen contamination, and graphene transferred to SiO 2 /Si substrates (decoupled). The CoO growth was performed at room temperature by thermal evaporation of metallic Co under a molecular oxygen atmosphere, and the early stages of the growth were investigated. On the decoupled G/SiO 2 /Si samples, with an initial low crystalline quality of graphene, the formation of a CoO wetting layer is observed, identifying the Stranski-Krastanov growth mode. In contrast, on coupled G/Cu samples, the Volmer-Weber growth mechanism is observed. In both sets of samples, the oxidation of graphene is low during the early stages of growth, increasing for the larger coverages. Furthermore, structural defects are developed in the graphene lattice on both substrates during the growth of CoO, which is significantly higher on decoupled G/SiO 2 /Si samples mainly for higher CoO coverages. When approaching the full coverage on both substrates, the CoO islands coalesce to form a continuous CoO layer with strip-like structures with diameters ranging between 70 and 150 nm.

This work introduces a simplified deposition procedure for multidimensional (2D/3D) perovskite thin films, integrating a phenethylammonium chloride (PEACl)-treatment into the antisolvent step when forming the 3D perovskite. This simultaneous deposition and passivation strategy reduces the number of synthesis steps while simultaneously stabilizing the halide perovskite film and improving the photovoltaic performance of resulting solar cell devices to 20.8%. Using a combination of multimodal in situ and additional ex situ characterizations, it is demonstrated that the introduction of PEACl during the perovskite film formation slows down the crystal growth process, which leads to a larger average grain size and narrower grain size distribution, thus reducing carrier recombination at grain boundaries and improving the device's performance and stability. The data suggests that during annealing of the wet film, the PEACl diffuses to the surface of the film, forming hydrophobic (quasi-)2D structures that protect the bulk of the perovskite film from humidity-induced degradation., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

Copper oxide appears to be a promising candidate for a hole transport layer (HTL) in emerging perovskite solar cells. Reasons for this are its good optical and electrical properties, cost-effectiveness, and high stability. However, is this really the case? In this study, we demonstrate that copper oxide, synthesized by a spray-coating method, is unstable in contact with formamidinium lead triiodide (FAPI) perovskite, leading to its decomposition. Using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet-visible (UV-vis) spectrophotometry, we find that the entire copper oxide diffuses into and reacts with the FAPI film completely. The reaction products are an inactive yellow δ-FAPI phase, copper iodide (CuI), and an additional new phase of copper formate hydroxide (CH 2 CuO 3 ) that has not been reported previously in the literature.

Interfaces in perovskite solar cells play a crucial role in their overall performance, and therefore, detailed fundamental studies are needed for a better understanding. In the case of the classical n-i-p architecture, TiO 2 is one of the most used electron-selective layers and can induce chemical reactions that influence the performance of the overall device stack. The interfacial properties at the TiO 2 /perovskite interface are often neglected, owing to the difficulty in accessing this interface. Here, we use X-rays of variable energies to study the interface of (compact and mesoporous) TiO 2 /perovskite in such a n-i-p architecture. The X-ray photoelectron spectroscopy and X-ray absorption spectroscopy methods show that the defect states present in the TiO 2 layer are passivated by a chemical interaction of the perovskite precursor solution during the formation of the perovskite layer and form an organic layer at the interface. Such passivation of intrinsic defects in TiO 2 removes charge recombination centers and shifts the bands upward. Therefore, interface defect passivation by oxidation of Ti 3+ states, the organic cation layer, and an upward band bending at the TiO 2 /perovskite interface explain the origin of an improved electron extraction and hole-blocking nature of TiO 2 in the n-i-p perovskite solar cells.

The most efficient and stable perovskite solar cells (PSCs) are made from a complex mixture of precursors. Typically, to then form a thin film, an extreme oversaturation of the perovskite precursor is initiated to trigger nucleation sites, e.g., by vacuum, an airstream, or a so-called antisolvent. Unfortunately, most oversaturation triggers do not expel the lingering (and highly coordinating) dimethyl sulfoxide (DMSO), which is used as a precursor solvent, from the thin films; this detrimentally affects long-term stability. In this work, (the green) dimethyl sulfide (DMS) is introduced as a novel nucleation trigger for perovskite films combining, uniquely, high coordination and high vapor pressure. This gives DMS a universal scope: DMS replaces other solvents by coordinating more strongly and removes itself once the film formation is finished. To demonstrate this novel coordination chemistry approach, MAPbI 3 PSCs are processed, typically dissolved in hard-to-remove (and green) DMSO achieving 21.6% efficiency, among the highest reported efficiencies for this system. To confirm the universality of the strategy, DMS is tested for FAPbI 3 as another composition, which shows higher efficiency of 23.5% compared to 20.9% for a device fabricated with chlorobenzene. This work provides a universal strategy to control perovskite crystallization using coordination chemistry, heralding the revival of perovskite compositions with pure DMSO., (© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

In the present work we investigate the growth of monolayer MoSe 2 on selenium-intercalated graphene on Ru(0001), a model layered heterostructure combining a transition metal dichalcogenide with graphene, using low energy electron microscopy and micro-diffraction. Real-time observation of MoSe 2 on graphene growth reveals the island nucleation dynamics at the nanoscale. Upon annealing, larger islands are formed by sliding and attachment of multiple nanometer-sized MoSe 2 flakes. Local micro-spot angle-resolved photoemission spectroscopy reveals the electronic structure of the heterostructure, indicating that no charge transfer occurs within adjacent layers. The observed behavior is attributed to intercalation of Se at the graphene/Ru(0001) interface. The unperturbed nature of the proposed heterostructure therefore renders it as a model system for investigations of graphene supported TMD nanostructures., Competing Interests: Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (Copyright © 2023. Published by Elsevier B.V.)

We have used low-energy electron microscopy (LEEM), micro-illumination low-energy electron diffraction (µLEED) supported by ab initio calculations, and X-ray absorption spectroscopy (XAS) to investigate in-situ and in real-time the structural properties of Sm 2 O 3 deposits grown on Ru(0001), a rare-earth metal oxide model catalyst. Our results show that samarium oxide grows in a hexagonal A-Sm 2 O 3 phase on Ru(0001), exhibiting a (0001) oriented-top facet and (113) side facets. Upon annealing, a structural transition from the hexagonal to cubic phase occurs, in which the Sm cations exhibit the +3 oxidation state. The unexpected initial growth in the A-Sm 2 O 3 hexagonal phase and its gradual transition to a mixture with cubic C-Sm 2 O 3 showcases the complexity of the system and the critical role of the substrate in the stabilization of the hexagonal phase, which was previously reported only at high pressures and temperatures for bulk samaria. Besides, these results highlight the potential interactions that Sm could have with other catalytic compounds with respect to the here gathered insights on the preparation conditions and the specific compounds with which it interacts., Competing Interests: Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (Copyright © 2023 The Author(s). Published by Elsevier B.V. All rights reserved.)

Hydrogen gas sensors have recently attracted increased interest due to the explosive nature of H 2 and its strategic importance in the sustainable global energy system. In this paper, the tungsten oxide thin films deposited by innovative gas impulse magnetron sputtering have been investigated in terms of their response to H 2 . It was found that the most favourable annealing temperature in terms of sensor response value, as well as response and recovery times, was achieved at 673 K. This annealing process caused a change in the WO 3 cross-section morphology from a featureless and homogenous form to a rather columnar one, but still maintaining the same surface homogeneity. In addition to that, the full-phase transition from an amorphous to nanocrystalline form occurred with a crystallite size of 23 nm. It was found that the sensor response to only 25 ppm of H 2 was equal to 6.3, which is one of the best results presented in the literature so far of WO 3 optical gas sensors based on a gasochromic effect. Moreover, the results of the gasochromic effect were correlated with the changes in the extinction coefficient and the concentration of the free charge carriers, which is also a novel approach to the understanding of the gasochromic phenomenon.

Hydrogen is an efficient source of clean and environmentally friendly energy. However, because it is explosive at concentrations higher than 4%, safety issues are a great concern. As its applications are extended, the need for the production of reliable monitoring systems is urgent. In this work, mixed copper-titanium oxide ((CuTi)Ox) thin films with various copper concentrations (0-100 at.%), deposited by magnetron sputtering and annealed at 473 K, were investigated as a prospective hydrogen gas sensing material. Scanning electron microscopy was applied to determine the morphology of the thin films. Their structure and chemical composition were investigated by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The prepared films were nanocrystalline mixtures of metallic copper, cuprous oxide, and titanium anatase in the bulk, whereas at the surface only cupric oxide was found. In comparison to the literature, the (CuTi)Ox thin films already showed a sensor response to hydrogen at a relatively low operating temperature of 473 K without using any extra catalyst. The best sensor response and sensitivity to hydrogen gas were found in the mixed copper-titanium oxides containing similar atomic concentrations of both metals, i.e., 41/59 and 56/44 of Cu/Ti. Most probably, this effect is related to their similar morphology and to the simultaneous presence of Cu and Cu 2 O crystals in these mixed oxide films. In particular, the studies of surface oxidation state revealed that it was the same for all annealed films and consisted only of CuO. However, in view of their crystalline structure, they consisted of Cu and Cu 2 O nanocrystals in the thin film volume.

La-doped SrTiO 3 thin films with high structural quality were homoepitaxially grown by the metal-organic vapor phase epitaxy (MOVPE) technique. Thermogravimetric characterization of the metal-organic precursors determines suitable flash evaporator temperatures for transferring the liquid source materials in the gas phase of the reactor chamber. An adjustment of the charge carrier concentration in the films, which is necessary for optimizing the thermoelectric power factor, was performed by introducing a defined amount of the metal-organic compound La(tmhd) 3 and tetraglyme to the liquid precursor solution. X-ray diffraction and atomic force microscopy verified the occurrence of the pure perovskite phase exhibiting a high structural quality for all La concentrations. The electrical conductivity of the films obtained from Hall-effect measurements increases linearly with the La concentration in the gas phase, which is attributed to the incorporation of La 3+ ions on the Sr 2+ perovskite sites by substitution inferred from photoemission spectroscopy. The resulting structural defects were discussed concerning the formation of occasional Ruddlesden-Popper-like defects. The thermoelectric properties determined by Seebeck measurements demonstrate the high potential of SrTiO 3 thin films grown by MOVPE for thermoelectric applications., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

An Al 2 O 3 /ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ . The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by in situ X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of Al 2 O 3 are found to be 1.1 eV below and 2.3 eV above those of ZnO, resulting in a type-I staggered heterojunction. An apparent reduction of ZnO to elemental Zn in the interface region was detected in the Zn 2p core level and Zn L 3 MM Auger spectra. This suggests an interface formation different from previous models. The reduction of ZnO to Zn in the interface region accompanied by the creation of oxygen vacancies in ZnO results in an upward band bending at the interface. Therefore, this study suggests that interfacial properties such as the band bending as well as the valence and conduction band offsets should be in situ controllable to a certain extent by careful selection of the process parameters.

In this work, a switch from n-type to p-type conductivity in electrodeposited Cu 3 (2,3,6,7,10,11-hexahydroxytriphenylene) 2 [Cu 3 (HHTP 2 )] has been observed, which is most likely due to oxygen molecular doping. The synthesis of electrically conductive 2D metal-organic frameworks (MOFs) has been achieved through the introduction of highly conjugated organic linkers coordinated to their constituent metal-ion centers. However, the porous structure and unsaturated metal sites in MOFs make them susceptible to ambient adsorbates, which can affect their charge transport properties. This phenomenon has been experimentally investigated by GIXRD, Hall effect and Seebeck measurements, and X-ray photoelectron spectroscopy.

Vanadium dioxide (VO 2 ) features a pronounced, thermally-driven metal-to-insulator transition at 340 K. Employing epitaxial stress on rutile [Formula: see text] substrates, the transition can be tuned to occur close to room temperature. Striving for applications in oxide-electronic devices, the lateral homogeneity of such samples must be considered as an important prerequisite for efforts towards miniaturization. Moreover, the preparation of smooth surfaces is crucial for vertically stacked devices and, hence, the design of functional interfaces. Here, the surface morphology of [Formula: see text] films was analyzed by low-energy electron microscopy and diffraction as well as scanning probe microscopy. The formation of large terraces could be achieved under temperature-induced annealing, but also the occurrence of facets was observed and characterized. Further, we report on quasi-periodic arrangements of crack defects which evolve due to thermal stress under cooling. While these might impair some applicational endeavours, they may also present crystallographically well-oriented nano-templates of bulk-like properties for advanced approaches.

For several years, scientists have been trying to understand the mechanisms that reduce the long-term stability of perovskite solar cells. In this work, we examined the effect of water and photon flux on the stability of CH 3 NH 3 PbI 3 perovskite films and solar cells using in situ near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS), field emission scanning electron microscopy (FESEM), and current density-voltage (J-V) characterization. The used amount of water vapor (up to 1 mbar) had a negligible impact on the perovskite film. The higher the photon flux, the more prominent were the changes in the NAP-XPS and FESEM data; also, a faster decline in power conversion efficiency (PCE) and a more substantial hysteresis in the J-V characteristics were observed. Based on our results, it can be concluded that the PCE decrease originates from the creation of Frenkel pair defects in the perovskite film under illumination. The stronger the illumination, the higher the number of Frenkel defects, leading to a faster PCE decline and more substantial hysteresis in the J-V sweeps., (© 2020 The Authors. Published by Wiley-VCH GmbH.)

The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction 31 × 31 R ± 9 ° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm 2 V -1 s -1 . The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-of-line integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis., (© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The work is focused on understanding the dynamics of the processes which occur at the interface between ceria and platinum during redox processes, by investigating an inverse catalytic model system made of ceria epitaxial islands and ultrathin films supported on Pt(111). The evolution of the morphology, structure and electronic properties is analyzed in real-time during reduction and oxidation, using low-energy electron microscopy and spatially resolved low-energy electron diffraction. The reduction is induced using different methods, namely thermal treatments in ultra-high vacuum and in H 2 as well as deposition of Ce on the oxide surface, while re-oxidation is obtained by exposure to oxygen at elevated temperature. The use of two different epitaxial systems, continuous films and nanostructures, allows determining the influence of platinum proximity on the stabilization of the specific phases observed. The factors that limit the reversibility of the observed modifications with the different oxidation treatments are also discussed. The obtained results highlight important aspects of the cerium oxide/Pt interaction that are relevant for a complete understanding of the behavior of Pt/CeO 2 catalysts.

The thermal reduction of cerium oxide nanostructures deposited on a rhodium(111) single crystal surface and the re-oxidation of the structures by exposure to CO2 were investigated. Two samples are compared: a rhodium surface covered to ≈60% by one to two O-Ce-O trilayer high islands and a surface covered to ≈65% by islands of four O-Ce-O trilayer thickness. Two main results stand out: (1) the thin islands reduce at a lower temperature (870-890 K) and very close to Ce2O3, while the thicker islands need higher temperature for reduction and only reduce to about CeO1.63 at a maximum temperature of 920 K. (2) Ceria is re-oxidized by CO2. The rhodium surface promotes the re-oxidation by splitting the CO2 and thus providing atomic oxygen. The process shows a clear temperature dependence. The maximum oxidation state of the oxide reached by re-oxidation with CO2 differs for the two samples, showing that the thinner structures require a higher temperature for re-oxidation with CO2. Adsorbed carbon species, potentially blocking reactive sites, desorb from both samples at the same temperature and cannot be the sole origin for the observed differences. Instead, an intrinsic property of the differently sized CeOx islands must be at the origin of the observed temperature dependence of the re-oxidation by CO2.

Proper consideration of length-scales is critical for elucidating active sites/phases in heterogeneous catalysis, revealing chemical function of surfaces and identifying fundamental steps of chemical reactions. Using the example of ceria thin films deposited on the Cu(111) surface, we demonstrate the benefits of multi length-scale experimental framework for understanding chemical conversion. Specifically, exploiting the tunable sampling and spatial resolution of photoemission electron microscopy, we reveal crystal defect mediated structures of inhomogeneous copper-ceria mixed phase that grow during preparation of ceria/Cu(111) model systems. The density of the microsized structures is such that they are relevant to the chemistry, but unlikely to be found during investigation at the nanoscale or with atomic level investigations. Our findings highlight the importance of accessing micro-scale when considering chemical pathways over heteroepitaxially grown model systems., (Copyright © 2017 Elsevier B.V. All rights reserved.)

The complex structure and morphology of ultrathin praseodymia films deposited on a ruthenium(0001) single crystal substrate by reactive molecular beam epitaxy is analyzed by intensity-voltage low-energy electron microscopy in combination with theoretical calculations within an ab initio scattering theory. A rich coexistence of various nanoscale crystalline surface structures is identified for the as-grown samples, notably comprising two distinct oxygen-terminated hexagonal Pr 2 O 3 (0001) surface phases as well as a cubic Pr 2 O 3 (111) and a fluorite PrO 2 (111) surface component. Furthermore, scattering theory reveals a striking similarity between the electron reflectivity spectra of praseodymia and ceria due to very efficient screening of the nuclear charge by the extra 4f electron in the former case., (Copyright © 2017 Elsevier B.V. All rights reserved.)

Cerium oxide is often applied in today's catalysts due to its remarkable oxygen storage capacity. The changes in stoichiometry during reaction are linked to structural modifications, which in turn affect its catalytic activity. We present a real-time in situ study of the structural transformations of cerium oxide particles on ruthenium(0001) at high temperatures of 700 °C in ultra-high vacuum. Our results demonstrate that the reduction from CeO 2 to cubic Ce 2 O 3 proceeds via ordered intermediary phases. The final reduction step from cubic to hexagonal Ce 2 O 3 is accompanied by a lattice expansion, the formation of two new surface terminations, a partial dissolution of the cerium oxide particles, and a massive mass transport of cerium from the particles to the substrate. The conclusions allow for new insights into the structure, stability, and dynamics of cerium oxide nanoparticles in strongly reducing environments.

The growth, morphology, structure, and stoichiometry of ultrathin praseodymium oxide layers on Ru(0001) were studied using low-energy electron microscopy and diffraction, photoemission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. At a growth temperature of 760 °C, the oxide is shown to form hexagonally close-packed (A-type) Pr 2 O 3 (0001) islands that are up to 3 nm high. Depending on the local substrate step density, the islands either adopt a triangular shape on sufficiently large terraces or acquire a trapezoidal shape with the long base aligned along the substrate steps.

The growth of 3, 4, 9, 10-perylene tetracarboxylic dianhydride (PTCDA) on the Ga-polar GaN(0 0 0 1) surface has been studied by x-ray photoelectron spectroscopy (XPS), spot profile analysis low-energy electron diffraction (SPA-LEED), near edge x-ray absorption fine structure (NEXAFS), and scanning tunneling microscopy (STM). The stoichiometric ratios derived from XPS indicate that the molecules remain intact upon adsorption on the surface. Furthermore, no chemical shifts can be observed in the C 1s and O 1s core levels with progressing deposition of PTCDA, suggesting none or only weak interactions between the molecules and the substrate. NEXAFS data indicate the PTCDA molecules being oriented with their molecular plane parallel to the surface. High-resolution STM shows PTCDA islands of irregular shape on the sub-micron scale, and together with corresponding SPA-LEED data reveals a lateral ordering of the molecules that is compatible with the presence of (1 0 2) oriented PTCDA nano-crystals. SPA-LEED moreover clearly shows the presence of homogeneously distributed rotational domains of two-dimensionally isotropic PTCDA.

The reactive growth of cobalt germanide on Ge(001) was investigated by means of in situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction (μ-LEED), and ex situ atomic force microscopy (AFM). At a Co deposition temperature of 670 °C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. By combining XAS-PEEM and μ-LEED, we were able to identify a large part of the islands to consist of CoGe2, with many of them having an unusual epitaxial relationship: CoGe2 [Formula: see text] [Formula: see text] Ge [Formula: see text]. Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co5Ge7 and CoGe. Comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates, the occurrence of these intermediate phases seems to be promoted by defects or residual strain.

We have studied (001) surface terminated cerium oxide nanoparticles grown on a ruthenium substrate using physical vapor deposition. Their morphology, shape, crystal structure, and chemical state are determined by low-energy electron microscopy and micro-diffraction, scanning probe microscopy, and synchrotron-based X-ray absorption spectroscopy. Square islands are identified as CeO2 nanocrystals exhibiting a (001) oriented top facet of varying size; they have a height of about 7 to 10 nm and a side length between about 50 and 500 nm, and are terminated with a p(2 × 2) surface reconstruction. Micro-illumination electron diffraction reveals the existence of a coincidence lattice at the interface to the ruthenium substrate. The orientation of the side facets of the rod-like particles is identified as (111); the square particles are most likely of cuboidal shape, exhibiting (100) oriented side facets. The square and needle-like islands are predominantly found at step bunches and may be grown exclusively at temperatures exceeding 1000 °C.

We have studied the oxidation of the Ru(0001) surface by in situ microscopy during exposure to NO2, an efficient source of atomic oxygen, at elevated temperatures. In a previous investigation [Flege et al., Phys. Rev. B: Condens. Matter Mater. Phys., 2008, 78, 165407], at O coverages exceeding 1 monolayer, using the combination of intensity-voltage (I(V)) low-energy electron microscopy (LEEM) and multiple scattering calculations for the (00) beam in the very-low-energy range (E≤ 50 eV) we identified three surface components during the initial Ru oxidation: a (1 × 1)-O chemisorption phase, the RuO2(110) oxide phase, and a surface oxide structure characterized by a trilayer O-Ru-O stacking. Here, we use dark-field LEEM imaging and micro-illumination low-energy electron diffraction in the range of 100 to 400 eV to show that this trilayer phase is actually a RuO2(100)-(1 × 1) phase with possibly mixed O and Ru surface terminations. This identification rationalizes the thermodynamic stability of this phase at elevated temperatures and is consistent with the observation of catalytic activity of the phase in CO oxidation.

The structural modification of the Ru(0001) surface is followed in real-time using low-energy electron microscopy at elevated temperatures during exposure to molecular oxygen. We observe the nucleation and growth of three different RuO2 facets, which are unambiguously identified by single-domain microspot low-energy electron diffraction (μLEED) analysis from regions of 250 nm in diameter. Structural identification is then pushed to the true nanoscale by employing very-low-energy electron reflectivity spectra R(E) from regions down to 10 nm for structural fingerprinting of complex reactions such as the oxidation of metal surfaces. Calculations of R(E) with an ab initio scattering theory confirm the growth of (110), (100), and (101) orientations of RuO2 and explain the shape of the R(E) spectra in terms of the conducting band structure. This methodology is ideally suited to identify the structure of supported ultrathin films and dynamic transformations at multicomponent interfaces down to few nanometer lateral resolution at elevated temperature and in reactive environments.

We present an extensive mesoscale study of the initial gas phase oxidation of Ru(0001), employing in situ low-energy electron microscopy (LEEM), micro low-energy electron diffraction (μ-LEED) and scanning tunneling microscopy (STM). The initial oxidation was investigated in a temperature range of 500-800 K at a constant oxygen pressure of p(O2) = 4 × 10(-5) mbar. Depending to the preparation temperature a dramatic change of the growth morphology of the RuO2 film was observed. At lower temperature (580 K) the RuO2(110) film grows anisotropically oriented along the high symmetry directions of the Ru(0001) substrate. At higher temperature (680 K), new rotational domains of RuO2(110) begin to appear, which are slightly rotated by up to 20° with respect to the high symmetry direction. These rotated RuO2(110) domains grow along slightly rotated step edges and reveal an isotropic growth morphology. Both the growth speed and the nucleation rate differ from that of the oxide growth at lower temperature (580 K).

Three different methods to determine the oxide-phase concentration in mixed cerium oxide by hard X-ray photoelectron spectroscopy are applied and quantitatively compared. Synchrotron-based characterization of the O 1s region was used as a benchmark to introduce a method based on the weighted superposition of the Ce 3d spectra of the pure Ce(3+) and Ce(4+) phases, which was shown to lead to reliable and highly accurate determination of the mean oxidation state in mixed cerium oxides. The results obtained reveal a linear relation between the third distinct final state (u''') satellite peak intensity of the Ce(4+) phase and the Ce(4+) concentration by proper inclusion of Ce(3+)-related plasmon satellite peaks, which contradicts previous claims of nonlinear behavior. In contrast, quantitative conventional peak-fitting procedures were shown to be well suited for the Ce 2p region due to its relatively simple structure. Additional satellite features observed in the Ce 3d spectrum of CeO2 were proposed to originate from plasmon contributions., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Electron scattering by oxygen monolayers on the Ru(0 0 0 1) surface is studied both experimentally and theoretically. Sharp transmission resonances at low energies are revealed and established to originate from critical points of a special kind in the complex band structure of the substrate. Electron reflection from the clean and oxidized Ru(0 0 0 1) is measured for kinetic energies up to 40 eV at normal incidence for oxygen coverages of 1/4, 1/2, 3/4, and one monolayer. The reflection spectra R(E) are analyzed using a Bloch-waves based ab initio scattering theory. In addition to the substrate-induced resonances the reconstructed (2 × 1) and (2 × 2) surfaces show surface resonances due to pre-emergent secondary diffraction beams. The R(E) spectra are shown to give unambiguous evidence of the hcp stacking of the oxygen layer.

The growth of cerium oxide on Ru(0001) by reactive molecular beam epitaxy has been investigated using low-energy electron microscopy (LEEM) and diffraction as well as local valence band photoemission. The oxide islands are found to adopt a carpet-like growth mode, which depending on the local substrate morphology and misorientation leads to deviations from the otherwise almost perfect equilateral shape at a growth temperature of 850 °C. Furthermore, although even at this high growth temperature the micron-sized CeO₂(111) islands are found to exhibit different lattice registries with respect to the hexagonal substrate, the combination of dark-field LEEM and local intensity-voltage analysis reveals that the oxidation state of the islands is homogeneous down to the 10 nm scale., (Copyright © 2013 Elsevier B.V. All rights reserved.)

Our results indicate that small amounts of an oxide deposited on a stable metal surface can trigger a massive surface reconstruction under reaction conditions. In low-energy electron microscopy (LEEM) experiments, no reconstruction of Cu(111) is observed after chemisorbing oxygen or after reducing O/Cu(111) in a CO atmosphere. On the other hand, LEEM images taken in situ during the reduction of CeO2/CuO1-x/Cu(111) show a complex nonuniform transformation of the surface morphology. Ceria particles act as nucleation sites for the growth of copper microterraces once CuO1-x is reduced. Can this reconstructed surface be used to enhance the catalytic activity of inverse oxide/metal catalysts? Indeed, CeOx on reconstructed Cu(111) is an extremely active catalyst for the water-gas shift process (CO + H2O → H2 + CO2), with the Cu microterraces providing very efficient sites for the dissociation of water and subsequent reaction with CO.

CO oxidation over oxygen-rich Ru(0001) surfaces is one of the most studied catalytic oxidation reactions in surface science and of widespread interest as a model system for the redox chemistry of transition metal model catalysts. Here, we present an extensive low-energy electron microscopy (LEEM) and photoemission electron microscopy study of the oxidation of Ru(0001), which constitutes a crucial step in understanding the overall surface reaction. After characterizing the different surface nanoscale morphologies observed depending on the oxidation temperature, three distinct oxygen-rich phases are identified by dark-field microscopy and local valence-band spectroscopy. Furthermore, in situ LEEM allows us to follow the growth of single rutile oxide nuclei in real time and determine the relevant activation barriers that induce quasi-one-dimensional growth of oxide nanorods, whose growth rate is limited by O incorporation.

The pre-adsorption of Ga on Si(112) leads to a drastic change of the morphology of subsequently grown Ge islands. In contrast to the case for Ge growth on bare Si(112), even nanowire growth can be achieved on Ga terminated Si(112). Employing low energy electron microscopy and low energy electron diffraction, the initial phase of Ge nucleation and Ge island growth was systematically analysed for growth temperatures between 420 and 610 °C, both on clean and on Ga terminated Si(112). In both cases the island density exhibits an Arrhenius-like behaviour, from which diffusion barrier heights of about 1.3 and 1.0 eV can be estimated for growth with and without Ga pre-adsorption, respectively. The Ge island shape on the bare Si(112) surface is found to be nearly circular over the whole temperature range, whereas the shapes of the Ge islands on the Ga terminated Si(112) become highly anisotropic for higher temperatures. Ge nanowires with sizes of up to 2 µm along the [Formula: see text] direction are observed.

Graphene has been used to explore the fascinating electronic properties of ideal two-dimensional carbon, and shows great promise for quantum device architectures. The primary method for isolating graphene, micromechanical cleavage of graphite, is difficult to scale up for applications. Epitaxial growth is an attractive alternative, but achieving large graphene domains with uniform thickness remains a challenge, and substrate bonding may strongly affect the electronic properties of epitaxial graphene layers. Here, we show that epitaxy on Ru(0001) produces arrays of macroscopic single-crystalline graphene domains in a controlled, layer-by-layer fashion. Whereas the first graphene layer indeed interacts strongly with the metal substrate, the second layer is almost completely detached, shows weak electronic coupling to the metal, and hence retains the inherent electronic structure of graphene. Our findings demonstrate a route towards rational graphene synthesis on transition-metal templates for applications in electronics, sensing or catalysis.

Liquid eutectic Pt-Si droplets, migrating across a Si(100) surface due to an applied temperature gradient, interact measurably with surface steps. An analysis of the interaction yields a critical size of hundreds of nanometers below which droplets are constrained to move parallel to monolayer steps. Bunches of closely spaced steps are capable of guiding larger, micron-sized droplets. This steering by steps or step bunches may be used for the controlled manipulation of liquid droplets on patterned surfaces, and affects fundamental surface processes such as coarsening.

A novel mechanism is described which enables the selective formation of three-dimensional Ge islands. Submonolayer adsorption of Ga on Si(111) at high temperature leads to a self-organized two-dimensional pattern formation by separation of the 7 x 7 substrate and Ga/Si(111)-(square root[3] x square root[3])-R30 degrees domains. The latter evolve at step edges and domain boundaries of the initial substrate reconstruction. Subsequent Ge deposition results in the growth of 3D islands which are aligned at the boundaries between bare and Ga-covered domains. This result is explained in terms of preferential nucleation conditions due to a modulation of the surface chemical potential.

The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.