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Flexible In2O3 nanowire transistors gated by microporous SiO2-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 μF/cm2 at 20 Hz) of the microporous SiO2 solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, 1.7×106, and 218.3 cm2/V·s, respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors.

[Display omitted] • Environmentally friendly and scalable method for the fabrication of large area electrodes. • Use of water-based cellulose derivatives solutions and large area techniques. • Realization of performing PEDOT:PSS electrodes on paper. • Method for the fabrication of wearable electrodes with improved electromechanical performances. Flexible electronics have become widespread in the last decades. Due to the environmental crisis that our planet is facing, the use of sustainable materials, and less time and energy-consuming methods for the fabrication of flexible and light weight devices, have become crucial. In this context, the present study proposes a low environmental impact and scalable method for producing large-area PEDOT:PSS electrodes on standard copy paper through its surface modification. Specifically, the paper substrate is treated (through blade-coating technique) with a cellulose-based polymeric coating to close its porousness and homogenize its surface prior to the deposition of the conductive material. This cellulose-based interface allows the subsequent effective deposition of the conductive PEDOT:PSS layer, achieving an improved electrode in terms of both conductive stability and electromechanical performance. The stability of the electrode was monitored over a six-month period, and the electrodes did not suffer any ageing effects, showing stable resistance values (within the experimental error). The electrodes fabricated on engineered paper display lower (−80 %) electrical resistance. They also showed increased breaking point during strain tests (17 ± 1 % vs 9 ± 1 %) and a minor increase in resistance after 1000 bending cycles (4 % vs 9 % increase). Thus, their increased performance, stability and reproducibility opens new possibilities for wearable electronic devices. [ABSTRACT FROM AUTHOR]

Junctionless flexible oxide-based electric-double-layer thin-film transistors (TFTs) are fabricated on paper substrates at room temperature. Channel and source/drain electrodes are realized by an indium–tin–oxide (ITO) film without any source/drain junction. Effective field-effect modulation of drain current can be obtained when the thickness of the top ITO film is decreased to 20 nm. These junctionless paper TFTs show a good device performance with a small subthreshold swing of 0.21 V/dec and a large on/off ratio of \2 \times \10^6. Such junctionless paper TFTs can provide a new opportunity for flexible paper electronics and low-cost portable-sensor applications. [ABSTRACT FROM PUBLISHER]