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2. Magnesium-vacancy optical centers in diamond

Author

Corte, Emilio, Andrini, Greta, Hernández, Elena Nieto, Pugliese, Vanna, Costa, Ângelo, Magchiels, Goele, Moens, Janni, Tunhuma, Shandirai Malven, Villarreal, Renan, Pereira, Lino M. C., Vantomme, André, Correia, João Guilherme, Bernardi, Ettore, Traina, Paolo, Degiovanni, Ivo Pietro, Moreva, Ekaterina, Genovese, Marco, Tchernij, Sviatoslav Ditalia, Olivero, Paolo, Wahl, Ulrich, and Forneris, Jacopo

Subjects
Condensed Matter - Materials Science, Quantum Physics
Abstract

We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 {\deg}C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications., Comment: 7 figures

Published
2022
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3. Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization

Author

Corte, Emilio, Sachero, Selene, Tchernij, Sviatoslav Ditalia, Lühmann, Tobias, Pezzagna, Sébastien, Traina, Paolo, Degiovanni, Ivo Pietro, Moreva, Ekaterina, Olivero, Paolo, Meijer, Jan, Genovese, Marco, and Forneris, Jacopo

Subjects
Quantum Physics, Condensed Matter - Materials Science
Abstract

We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters., Comment: 12 pages, 6 figures, 1 table

Published
2021
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4. Spectral features of Pb-related color centers in diamond

Author

Tchernij, Sviatoslav Ditalia, Corte, Emilio, Lühmann, Tobias, Traina, Paolo, Pezzagna, Sébastien, Degiovanni, Ivo Pietro, Provatas, Georgios, Moreva, Ekaterina, Meijer, Jan, Olivero, Paolo, Genovese, Marco, and Forneris, Jacopo

Subjects
Quantum Physics, Condensed Matter - Materials Science, Physics - Optics
Abstract

We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.

Published
2021
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5. Biocompatible technique for nanoscale magnetic field sensing with Nitrogen-Vacancy centers

Author

Bernardi, Ettore, Moreva, Ekaterina, Traina, Paolo, Petrini, Giulia, Tchernij, Sviatoslav Ditalia, Forneris, Jacopo, Pastuovic, Zelijko, Degiovanni, Ivo Pietro, Olivero, Paolo, and Genovese, M.

Subjects
Physics - Applied Physics, Quantum Physics
Abstract

The possibility of using Nitrogen-vacancy centers in diamonds to measure nanoscale magnetic fields with unprecedented sensitivity is one of the most significant achievements of quantum sensing. Here we present an innovative experimental set-up, showing an achieved sensitivity comparable to the state of the art ODMR protocols if the sensing volume is taken into account. The apparatus allows magnetic sensing in biological samples such as individual cells, as it is characterized by a small sensing volume and full bio-compatibility. The sensitivity at different optical powers is studied to extend this technique to the intercellular scale., Comment: 6 pages, 5 figures

Published
2020
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6. Quantum micro-nano devices fabricated in diamond by femtosecond laser and ion irradiation

Author

Eaton, Shane M., Hadden, J. P., Bharadwaj, Vibhav, Forneris, Jacopo, Picollo, Federico, Bosia, Federico, Sotillo, Belen, Giakoumaki, Argyro N., Jedrkiewicz, Ottavia, Chiappini, Andrea, Ferrari, Maurizio, Osellame, Roberto, Barclay, Paul E., Olivero, Paolo, and Ramponi, Roberta

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy center (NV). The NV's ground state spin can be read out optically exhibiting long spin coherence times of about 1 ms even at ambient temperatures. In addition, the energy levels of the NV are sensitive to external fields. These properties make NVs attractive as a scalable platform for efficient nanoscale resolution sensing based on electron spins and for quantum information systems. Diamond photonics enhances optical interaction with NVs, beneficial for both quantum sensing and information. Diamond is also compelling for microfluidic applications due to its outstanding biocompatibility, with sensing functionality provided by NVs. However, it remains a significant challenge to fabricate photonics, NVs and microfluidics in diamond. In this Report, an overview is provided of ion irradiation and femtosecond laser writing, two promising fabrication methods for diamond based quantum technological devices. The unique capabilities of both techniques are described, and the most important fabrication results of color center, optical waveguide and microfluidics in diamond are reported, with an emphasis on integrated devices aiming towards high performance quantum sensors and quantum information systems of tomorrow

Published
2020
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7. Quantum Nanophotonics with Group IV defects in Diamond

Author

Bradac, Carlo, Gao, Weibo, Forneris, Jacopo, Trusheim, Matt, and Aharonovich, Igor

Subjects
Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics, Quantum Physics
Abstract

Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitrogen-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged. They are M V colour centres, where M indicates one of the elements in the IV column of the periodic table Si, Ge, Sn and Pb, and V indicates lattice vacancies, i.e. missing next-neighbour carbon atoms. These centres exhibit a much stronger emission into the zero phonon line then the NV centre, they display inversion symmetry, and can be engineered using ion implantation all attractive features for scalable quantum photonic architectures based on solid-state, single-photon sources. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art of group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

Published
2019
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8. Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform

Author

Amanti, Francesco, primary, Andrini, Greta, additional, Armani, Fabrizio, additional, Barbato, Fabrizio, additional, Bellani, Vittorio, additional, Bonaiuto, Vincenzo, additional, Cammarata, Simone, additional, Campostrini, Matteo, additional, Dao, Thu Ha, additional, De Matteis, Fabio, additional, Demontis, Valeria, additional, Donati, Simone, additional, Di Giuseppe, Giovanni, additional, Ditalia Tchernij, Sviatoslav, additional, Fontana, Andrea, additional, Forneris, Jacopo, additional, Frontini, Luca, additional, Gunnella, Roberto, additional, Iadanza, Simone, additional, Kaplan, Ali Emre, additional, Lacava, Cosimo, additional, Liberali, Valentino, additional, Martini, Leonardo, additional, Marzioni, Francesco, additional, Morescalchi, Luca, additional, Pedreschi, Elena, additional, Piergentili, Paolo, additional, Prete, Domenic, additional, Rigato, Valentino, additional, Roncolato, Carlo, additional, Rossella, Francesco, additional, Salvato, Matteo, additional, Sargeni, Fausto, additional, Shojaii, Jafar, additional, Spinella, Franco, additional, Stabile, Alberto, additional, Toncelli, Alessandra, additional, and Vitali, Valerio, additional

Published
2024
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9. Creation and characterization of He-related color centers in diamond

Author

Forneris, Jacopo, Tengattini, Andrea, Tchernij, Sviatoslav Ditalia, Picollo, Federico, Battiato, Alfio, Traina, Paolo, Degiovanni, Ivo, Moreva, Ekaterina, Brida, Giorgio, Grilj, Veljko, Skukan, Natko, Jakšić, Milko, Genovese, Marco, and Olivero, Paolo

Subjects
Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Physics - Optics
Abstract

Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Moreover, the PL emission lines disappeared in samples that were He-implanted above the graphitization threshold. Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500{\deg}C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, the emission was investigated under different laser excitations wavelengths (i.e. 532 nm and 405 nm) with the purpose of gaining a preliminary insight about the position of the related levels in the energy gap of diamond.

Published
2016
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10. Realization of a diamond based high density multi electrode array by means of deep ion beam lithography

Author

Picollo, Federico, Battiato, Alfio, Bernardi, Ettore, Boarino, Luca, Enrico, Emanuele, Forneris, Jacopo, Monticone, Daniele Gatto, and Olivero, Paolo

Subjects
Physics - Instrumentation and Detectors, Condensed Matter - Materials Science
Abstract

In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 um) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 um diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals.

Published
2014
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11. Solid-State Color Centers for Single-Photon Generation

Author

Andrini, Greta, primary, Amanti, Francesco, additional, Armani, Fabrizio, additional, Bellani, Vittorio, additional, Bonaiuto, Vincenzo, additional, Cammarata, Simone, additional, Campostrini, Matteo, additional, Dao, Thu Ha, additional, De Matteis, Fabio, additional, Demontis, Valeria, additional, Di Giuseppe, Giovanni, additional, Ditalia Tchernij, Sviatoslav, additional, Donati, Simone, additional, Fontana, Andrea, additional, Forneris, Jacopo, additional, Francini, Roberto, additional, Frontini, Luca, additional, Gunnella, Roberto, additional, Iadanza, Simone, additional, Kaplan, Ali Emre, additional, Lacava, Cosimo, additional, Liberali, Valentino, additional, Marzioni, Francesco, additional, Nieto Hernández, Elena, additional, Pedreschi, Elena, additional, Piergentili, Paolo, additional, Prete, Domenic, additional, Prosposito, Paolo, additional, Rigato, Valentino, additional, Roncolato, Carlo, additional, Rossella, Francesco, additional, Salamon, Andrea, additional, Salvato, Matteo, additional, Sargeni, Fausto, additional, Shojaii, Jafar, additional, Spinella, Franco, additional, Stabile, Alberto, additional, Toncelli, Alessandra, additional, Trucco, Gabriella, additional, and Vitali, Valerio, additional

Published
2024
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12. Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors

Author

Forneris, Jacopo, Jamieson, David, Giacomini, Gabriele, Yang, Changyi, and Vittone, Ettore

Subjects
Condensed Matter - Materials Science, Physics - Instrumentation and Detectors
Abstract

In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode to provide information about the electrical characteristics of the device, as well as information on the location and the profile of each ionization track. The effectiveness of such approach was recently demonstrated in Ion Beam Induced Charge (IBIC) experiments carried out using a 2 MeV He microbeam scanning over a sub-100 lm scale silicon device, where the ion strike location point was evaluated through a comparative analysis of the charge induced in two independent surface electrodes coupled to independent data acquisition systems [2]. In this report, we show that the Monte Carlo method [3] can be efficiently exploited to simulate this IBIC experiment and to model the experimental data, shedding light on the role played by carrier diffusion, electronic noise and ion beam spot size on the induction of charge in the sensitive electrodes. Moreover, the Monte Carlo method shows that information on the ion strike position can be obtained from the charge signals from the sensitive electrodes.

Published
2014
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14. Hybrid Integrated Silicon Photonics Based on Nanomaterials.

Author

Prete, Domenic, Amanti, Francesco, Andrini, Greta, Armani, Fabrizio, Bellani, Vittorio, Bonaiuto, Vincenzo, Cammarata, Simone, Campostrini, Matteo, Cornia, Samuele, Dao, Thu Ha, De Matteis, Fabio, Demontis, Valeria, Di Giuseppe, Giovanni, Ditalia Tchernij, Sviatoslav, Donati, Simone, Fontana, Andrea, Forneris, Jacopo, Francini, Roberto, Frontini, Luca, and Gazzadi, Gian Carlo

Subjects
PHOTONICS, NANOSTRUCTURED materials, SILICON, MANUFACTURING processes, RESEARCH personnel
Abstract

Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical and quantum information technologies, since their ability to seamlessly integrate photonic components within the telecommunication band with existing silicon-based industrial processes offers significant advantages. However, despite this integration facilitating the development of novel devices, fostering fast and reliable communication protocols and the manipulation of quantum information, traditional integrated silicon photonics faces inherent physical limitations that necessitate a challenging trade-off between device efficiency and spatial footprint. To address this issue, researchers are focusing on the integration of nanoscale materials into photonic platforms, offering a novel approach to enhance device performance while reducing spatial requirements. These developments are of paramount importance in both classical and quantum information technologies, potentially revolutionizing the industry. In this review, we explore the latest endeavors in hybrid photonic platforms leveraging the combination of integrated silicon photonic platforms and nanoscale materials, allowing for the unlocking of increased device efficiency and compact form factors. Finally, we provide insights into future developments and the evolving landscape of hybrid integrated photonic nanomaterial platforms. [ABSTRACT FROM AUTHOR]

Published
2024
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17. Quantum Information with Integrated Photonics.

Author

Piergentili, Paolo, Amanti, Francesco, Andrini, Greta, Armani, Fabrizio, Bellani, Vittorio, Bonaiuto, Vincenzo, Cammarata, Simone, Campostrini, Matteo, Cornia, Samuele, Dao, Thu Ha, De Matteis, Fabio, Demontis, Valeria, Di Giuseppe, Giovanni, Ditalia Tchernij, Sviatoslav, Donati, Simone, Fontana, Andrea, Forneris, Jacopo, Francini, Roberto, Frontini, Luca, and Gunnella, Roberto

Subjects
QUANTUM computing, QUANTUM mechanics, RESEARCH personnel, PROBLEM solving, DIGITAL technology
Abstract

Since the 1980s, researchers have taken giant steps in understanding how to use quantum mechanics for solving real problems—for example, making a computer that works according to the laws of quantum mechanics. In recent decades, researchers have tried to develop a platform for quantum information and computation that can be integrated into digital and telecom technologies without the need of a cryogenic environment. The current status of research in the field of quantum integrated photonics will be reviewed. A review of the most common integrated photonic platforms will be given, together with the main achievements and results in the last decade. [ABSTRACT FROM AUTHOR]

Published
2024
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21. Magnesium-Vacancy Optical Centers in Diamond

Author

Corte, Emilio, primary, Andrini, Greta, additional, Nieto Hernández, Elena, additional, Pugliese, Vanna, additional, Costa, Ângelo, additional, Magchiels, Goele, additional, Moens, Janni, additional, Tunhuma, Shandirai Malven, additional, Villarreal, Renan, additional, Pereira, Lino M. C., additional, Vantomme, André, additional, Correia, João Guilherme, additional, Bernardi, Ettore, additional, Traina, Paolo, additional, Degiovanni, Ivo Pietro, additional, Moreva, Ekaterina, additional, Genovese, Marco, additional, Ditalia Tchernij, Sviatoslav, additional, Olivero, Paolo, additional, Wahl, Ulrich, additional, and Forneris, Jacopo, additional

Published
2022
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23. Spectral Emission Dependence of Tin‐Vacancy Centers in Diamond from Thermal Processing and Chemical Functionalization

Author

Corte, Emilio, primary, Sachero, Selene, additional, Ditalia Tchernij, Sviatoslav, additional, Lühmann, Tobias, additional, Pezzagna, Sébastien, additional, Traina, Paolo, additional, Degiovanni, Ivo Pietro, additional, Moreva, Ekaterina, additional, Olivero, Paolo, additional, Meijer, Jan, additional, Genovese, Marco, additional, and Forneris, Jacopo, additional

Published
2021
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24. Spectral features of Pb-related color centers in diamond – a systematic photoluminescence characterization

Author

Ditalia Tchernij, Sviatoslav, primary, Corte, Emilio, additional, Lühmann, Tobias, additional, Traina, Paolo, additional, Pezzagna, Sébastien, additional, Degiovanni, Ivo Pietro, additional, Provatas, Georgios, additional, Moreva, Ekaterina, additional, Meijer, Jan, additional, Olivero, Paolo, additional, Genovese, Marco, additional, and Forneris, Jacopo, additional

Published
2021
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25. Spectral features of Pb-related color centers in diamond: a systematic photoluminescence characterization

Author

Tchernij, Sviatoslav Ditalia, Corte, Emilio, Lühmann, Tobias, Traina, Paolo, Pezzagna, Sébastien, Degiovanni, Ivo Pietro, Provatas, Georgios, Moreva, Ekaterina, Meijer, Jan, Olivero, Paolo, Genovese, Marco, Forneris, Jacopo, Tchernij, Sviatoslav Ditalia, Corte, Emilio, Lühmann, Tobias, Traina, Paolo, Pezzagna, Sébastien, Degiovanni, Ivo Pietro, Provatas, Georgios, Moreva, Ekaterina, Meijer, Jan, Olivero, Paolo, Genovese, Marco, and Forneris, Jacopo

Abstract

We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405–520 nm range and at different temperatures in the 4–300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.

Published
2021

26. Quantum colour centers in diamond studied by emission channeling with short-lived isotopes (EC-SLI) and radiotracer photoluminescence

Author

Pereira, Lino, Wahl, Ulrich, Correia, João Guilherme, Costa, Ângelo, David Bosne, Eric, Lima, Tiago, Moens, Janni, da Silva, Manuel, Tunhuma, Malven, Vantomme, André, Amaral, Vítor, Aprà, Pietro, Ditalia Tchernij, Sviatoslav, Forneris, Jacopo, Green, Ben, Johnston, Karl, Lamelas, Afonso, and Olivero, Paolo

Subjects
Detectors and Experimental Techniques
Published
2020

27. Ion microbeams for detector characterization and materials modification with sample heating

Author

Crnjac, Andreo, Provatas, Georgios, Rodriguez Ramos, Mauricio, Brajković, Marko, Forneris, Jacopo, Ditalia Tchernij, Slava, and Jakšić, Milko

Subjects
ion beams, semiconductor materials modification, IBIC
Abstract

We report about the ongoing development of the ion microprobe end-station at the Zagreb accelerator facility. Recent research interests required the possibility to heat the samples in the microprobe chamber. The heating setup that has been constructed is now able to reach 1000 °C. Customized sample holder prevents heat distribution to nearby elements or breakdown of the high vacuum operation. Up to now, two sets of experiments utilized the heating capabilities: high temperature ion implantation (irradiation) and semiconductor detector characterization. Brief overview of these experiments will be presented. The first application was ion implantation of heavy ions (F, Cl, Fe…) in diamond material at different temperatures, up to 900 °C. This localized implantation helps the exploration of the new color centers in this material. The second application was part of the extensive study of the temperature effects on charge collection properties in diamond detectors [1]. Small areas of the detector were exposed to focused proton beam irradiation to induce defects in the bulk of the material. Ion beam induced charge (IBIC) technique was used to map the electronic properties from damaged areas and pristine (unirradiated) area at elevated temperatures. The data provides insight into the temperature evolution of the radiation hardness and trapping mechanisms. The effect of the polarization phenomena was also addressed. Finally, we report the new spatial resolution results using heavy ion beams in low current mode (fA). 6 MeV Carbon beam was focused to profile with 140 nm horizontal and 220 nm vertical spot size. Further efforts in the beam resolution refinement are planned to enable new possible applications of the microprobe setup. 1. Crnjac, A. ; Skukan, N. ; Provatas, G. ; Rodriguez-Ramos, M. ; Pomorski, M. ; Jakšić, M. Electronic Properties of a Synthetic Single- Crystal Diamond Exposed to High Temperature and High Radiation. Materials, 13, 2473. doi: 10.3390/ma13112473

Published
2020

28. A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions

Author

Bäni, Lukas, primary, Alexopoulos, Andreas, additional, Artuso, Marina, additional, Bachmair, Felix, additional, Bartosik, Marcin, additional, Beck, Helge, additional, Bellini, Vincenzo, additional, Belyaev, Vladimir, additional, Bentele, Benjamin, additional, Bes, Alexandre, additional, Brom, Jean-Marie, additional, Chiodini, Gabriele, additional, Chren, Dominik, additional, Cindro, Vladimir, additional, Claus, Gilles, additional, Collot, Johann, additional, Cumalat, John, additional, Curtoni, Sébastien, additional, Dabrowski, Anne, additional, D’Alessandro, Raffaello, additional, Dauvergne, Denis, additional, De Boer, Wim, additional, Dorfer, Christian, additional, Dünser, Marc, additional, Eigen, Gerald, additional, Eremin, Vladimir, additional, Forneris, Jacopo, additional, Gallin-Martel, Laurent, additional, Gallin-Martel, Marie-Laure, additional, Gan, Kock, additional, Gastal, Martin, additional, Ghimouz, Abderrahman, additional, Goffe, Mathieu, additional, Goldstein, Joel, additional, Golubev, Alexander, additional, Gorišek, Andrej, additional, Grigoriev, Eugene, additional, Grosse-Knetter, Jörn, additional, Grummer, Aidan, additional, Hiti, Bojan, additional, Hits, Dmitry, additional, Hoeferkamp, Martin, additional, Hosselet, Jérôme, additional, Hügging, Fabian, additional, Hutson, Chris, additional, Janssen, Jens, additional, Kagan, Harris, additional, Kanxheri, Keida, additional, Kass, Richard, additional, Kis, Mladen, additional, Kramberger, Gregor, additional, Kuleshov, Sergey, additional, Lacoste, Ana, additional, Lagomarsino, Stefano, additional, Lo Giudice, Alessandro, additional, López Paz, Ivan, additional, Lukosi, Eric, additional, Maazouzi, Chaker, additional, Mandić, Igor, additional, Marcatili, Sara, additional, Marino, Alysia, additional, Mathieu, Cédric, additional, Menichelli, Mauro, additional, Mikuž, Marko, additional, Morozzi, Arianna, additional, Moscatelli, Francesco, additional, Moss, Joshua, additional, Mountain, Raymond, additional, Oh, Alexander, additional, Olivero, Paolo, additional, Passeri, Daniele, additional, Pernegger, Heinz, additional, Perrino, Roberto, additional, Picollo, Federico, additional, Pomorski, Michal, additional, Potenza, Renato, additional, Quadt, Arnulf, additional, Rarbi, Fatah, additional, Re, Alessandro, additional, Reichmann, Michael, additional, Roe, Shaun, additional, Rossetto, Olivier, additional, Sanz Becerra, Diego, additional, Schmidt, Christian, additional, Schnetzer, Stephen, additional, Sciortino, Silvio, additional, Scorzoni, Andrea, additional, Seidel, Sally, additional, Servoli, Leonello, additional, Smith, Dale, additional, Sopko, Bruno, additional, Sopko, Vit, additional, Spagnolo, Stefania, additional, Spanier, Stefan, additional, Stenson, Kevin, additional, Stone, Robert, additional, Stugu, Bjarne, additional, Sutera, Concetta, additional, Traeger, Michael, additional, Trischuk, William, additional, Truccato, Marco, additional, Tuvè, Cristina, additional, Velthuis, Jaap, additional, Wagner, Stephen, additional, Wallny, Rainer, additional, Wang, Jianchun, additional, Wermes, Norbert, additional, Wickramasinghe, Jayashani, additional, Yamouni, Mahfoud, additional, Zalieckas, Justas, additional, Zavrtanik, Marko, additional, Hara, Kazuhiko, additional, Ikegami, Yoichi, additional, Jinnouchi, Osamu, additional, Kohriki, Takashi, additional, Mitsui, Shingo, additional, Nagai, Ryo, additional, Terada, Susumu, additional, and Unno, Yoshinobu, additional

Published
2020
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30. Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation (Adv. Quantum Technol. 5‐6/2019)

Author

Eaton, Shane M., primary, Hadden, John P., additional, Bharadwaj, Vibhav, additional, Forneris, Jacopo, additional, Picollo, Federico, additional, Bosia, Federico, additional, Sotillo, Belen, additional, Giakoumaki, Argyro N., additional, Jedrkiewicz, Ottavia, additional, Chiappini, Andrea, additional, Ferrari, Maurizio, additional, Osellame, Roberto, additional, Barclay, Paul E., additional, Olivero, Paolo, additional, and Ramponi, Roberta, additional

Published
2019
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32. Diamond Pixel Detectors and 3D Diamond Devices

Author

Venturi, N., Alexopoulos, A., Artuso, M., Bachmair, F., Bani, L., Bartosik, M., Beacham, J., Beck, H., Bellini, V., Belyaev, V., Bentele, B., Berdermann, E., Bergonzo, P., Bes, A., Brom, J. M., Bruzzi, M., Cerv, M., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Cumalat, J., Dabrowski, A., D'Alessandro, R., de Boer, W., Dehning, B., Dorfer, C., Dünser, M., Eremin, V., Eusebi, R., Forcolin, G., Forneris, Jacopo, Frais Kölbl, H., Gan, K. K., Gastal, M., Giroletti, C., Goffe, M., Goldstein, J., Golubev, A., Gorišek, A., Grigoriev, L. ., Grosse Knetter, J., Grummer, A., Gui, B., Guthoff, M., Haughton, I., Hiti, B., Hits, D., Hoeferkamp, M., Hofmann, T., Hosslet, J., Hostachy, J. Y., Hügging, F., Hutton, C., Jansen, H., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kassel, F., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., LO GIUDICE, Alessandro, Lukosi, E., Maazouzi, C., Mandic, I., Mathieu, C., Mcfadden, N., Menichelli, M., Mikuž, M., Morozzi, A., Moss, J., Mountain, R., Murphy, S., Muskinja, M., Oh, A., Olivero, Paolo, Passeri, D., Pernegger, H., Perrino, R., Picollo, Federico, Pomorski, M., Potenza, R., Quadt, A., Re, Alessandro, Reichmann, M., Riley, G., Roe, S., Sanz, D., Scaringella, M., Schaefer, D., Schmidt, C. J., Schnetzer, S., Schreiner, T., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Taylor, A., Traeger, M., Tromson, D., Trischuk, W., Tuve, C., Uplegger, L., Velthuis, J., Vittone, Ettore, Wagner, S., Wallny, R., Wang, J. C., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., and Zavrtanik, M.

Subjects
Diamond Detectors, Radiation-hard detectors, Instrumentation, Mathematical Physics, Resistive touchscreen, Materials science, Interaction point, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, business.industry, Detector, Diamond, engineering.material, 01 natural sciences, Noise (electronics), Signal-to-noise ratio, Planar, 0103 physical sciences, engineering, Optoelectronics, 010306 general physics, business
Abstract

Results from detectors of poly-crystalline chemical vapour deposited (pCVD) diamond are presented. These include the first analysis of data of the ATLAS Diamond Beam Monitor (DBM). The DBM module consists of pCVD diamond sensors instrumented with pixellated FE-I4 front-end electronics. Six diamond telescopes, each with three modules, are placed symmetrically around the ATLAS interaction point. The DBM tracking capabilities allow it to discriminate between particles coming from the interaction point and background particles passing through the ATLAS detector. Also, analysis of test beam data of pCVD DBM modules are presented. A new low threshold tuning algorithm based on noise occupancy was developed which increases the DBM module signal to noise ratio significantly. Finally first results from prototypes of a novel detector using pCVD diamond and resistive electrodes in the bulk, forming a 3D diamond device, are discussed. 3D devices based on pCVD diamond were successfully tested with test beams at CERN. The measured charge is compared to that of a strip detector mounted on the same pCVD diamond showing that the 3D device collects significantly more charge than the planar device.

Published
2016

33. Diamond sensors for future high energy experiments

Author

Artuso, M., Bachmair, F., Bani, L., Bartosik, M., Beacham, J., Bellini, V., Belyaev, V., Bentele, B., Berdermann, E., Bergonzo, P., Bes, A., Brom, J. M., Bruzzi, M., Cerv, M., Chau, C., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Costa, S., Cumalat, J., Dabrowski, A., D'Aessandro, R., de Boer, W., Dehning, B., Dobos, D., Dorfer, C., Dunser, M., Eremin, V., Eusebi, R., Forcolin, G., Forneris, Jacopo, Frais Kolbl, H., Gan, K. K., Gastal, M., Goffe, M., Goldstein, J., Golubev, A., Gonella, L., Gorisek, A., Graber, L., Grigoriev, E., Grosse Knetter, J., Gui, B., Guthoff, M., Haughton, I., Hidas, D., Hits, D., Hoeferkamp, M., Hofmann, T., Hosslet, J., Hostachy, J. Y., Hugging, F., Jansen, H., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kassel, F., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., LO GIUDICE, Alessandro, Maazouzi, C., Mandic, I., Mathieu, C., Mcfadden, N., Mcgoldrick, G., Menichelli, M., Mikuz, M., Morozzi, A., Moss, J., Mountain, R., Murphy, S., Oh, A., Olivero, Paolo, Parrini, G., Passeri, D., Pauluzzi, M., Pernegger, H., Perrino, R., Picollo, Federico, Pomorski, M., Potenza, R., Quadt, A., Re, Alessandro, Riley, G., Roe, S., Sapinski, M., Scaringella, M., Schnetzer, S., Schreiner, T., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Sfyrla, A., Shimchuk, G., Smith, D. S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Taylor, A., Traeger, M., Tromson, D., Trischuk, W., Tuve, C., Uplegger, L., Velthuis, J., Venturi, N., Vittone, Ettore, Wagner, S., Wallny, R., Wang, J. C., Weilhammer, P., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., Zavrtanik, M., Unno, Yoshinobu, Ohsugi, Takashi, Hou, Suen, Sadrozinski, Hartmut F.-W., Lou, Xinchou, Zhu, Hongbo, and Ouyang, Qun

Subjects
Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, Nanotechnology, 3D sensors, Charge collection, CVD diamond, Diamond particle detector, Particle physics, Radiation hardness, Instrumentation, 02 engineering and technology, Chemical vapor deposition, engineering.material, Radiation, Tracking (particle physics), 7. Clean energy, 01 natural sciences, 0103 physical sciences, Detectors and Experimental Techniques, Radiation hardening, 010302 applied physics, Physics, Large Hadron Collider, Detector, Diamond, 021001 nanoscience & nanotechnology, Engineering physics, Upgrade, engineering, 0210 nano-technology
Abstract

With the planned upgrade of the LHC to High-Luminosity-LHC [1], the general purpose experiments ATLAS and CMS are planning to upgrade their innermost tracking layers with more radiation tolerant technologies. Chemical Vapor Deposition CVD diamond is one such technology. CVD diamond sensors are an established technology as beam condition monitors in the highest radiation areas of all LHC experiments. The RD42-collaboration at CERN is leading the effort to use CVD diamond as a material for tracking detectors operating in extreme radiation environments. An overview of the latest developments from RD42 is presented including the present status of diamond sensor production, a study of pulse height dependencies on incident particle flux and the development of 3D diamond sensors. ISSN:0168-9002 ISSN:1872-9576

Published
2016

34. Super-resolution from single photon emission: toward biological application

Author

Forneris, Jacopo, primary, Guarina, Laura, primary, Picollo, Federico, primary, Olivero, Paolo, primary, Genovese, Marco, primary, Moreva, Ekaterina, primary, Traina, Paolo, primary, Ditalia Tchernij, Sviatoslav, primary, Franchino, Claudio, primary, Ruo Berchera, Ivano, primary, Brida, Giorgio, primary, Degiovanni, Ivo P., primary, and Carabelli, Valentina, primary

Published
2017
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35. Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Author

Forneris, Jacopo, Grilj, Veljko, Jakšić, Milko, Lo Giudice, Alessandro, Olivero, Paolo, Picollo, Federico, Skukan, Natko, Verona, Claudio, Verona-Rinati, Gianluca, Vittone, Ettore, Forneris, Jacopo, Grilj, Veljko, Jaksic, Milko, Olivero, Paolo, Picollo, Federico, Skukan, Natko, Verona, Claudio, Verona Rinati, Gianluca, and Vittone, Ettore

Subjects
Condensed Matter - Materials Science, Materials science, Physics - Instrumentation and Detectors, Ion beam, business.industry, Polarity (physics), Physics::Instrumentation and Detectors, Detector, Settore FIS/01 - Fisica Sperimentale, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, Charge (physics), Instrumentation and Detectors (physics.ins-det), Electrostatic induction, solid-state detectors, diamond, Settore FIS/07 - Fisica Applicata(Beni Culturali, Ambientali, Biol.e Medicin), Charge sharing, Ionizing radiation, Electrode, Optoelectronics, business
Abstract

In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors., 8 pages, 4 figures

Published
2013

36. Diamond particle detectors systems in high energy physics

Author

Oh, A., Artuso, M., Bachmair, F., Bani, L., Bartosik, M., Bellini, V., Belyaev, V., Bentele, B., Berdermann, E., Bergonzo, P., Bes, A., Brom, J. M., Bruzzi, M., Cerv, M., Chau, C., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Costa, S., Cumalat, J., Dabrowski, A., D’Alessandro, R., de Boer, W., Dehning, B., Dobos, D., Dulinski, W., Eremin, V., Eusebi, R., Forcolin, G., Forneris, Jacopo, Frais Kolbl, H., Gan, K. K., Gastal, M., Goffe, M., Goldstein, J., Golubev, A., Gonella, L., Gorisek, A., Graber, L., Grigoriev, E., Grosse Knetter, J., Guthoff, M., Haughton, I., Hidas, D., Hits, D., Hoeferkamp, M., Hofmann, T., Hosslet, J., Hostachy, J. Y., Hugging, F., Jansen, H., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kassel, F., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., LO GIUDICE, Alessandro, Maazouzi, C., Mandic, I., Manfredotti, C., Mathieu, C., Mcfadden, N., Mcgoldrick, G., Menichelli, M., Mikuz, M., Morozzi, A., Moss, J., Mountain, R., Murphy, S., Olivero, Paolo, Parrini, G., Passeri, D., Pauluzzi, M., Pernegger, H., Perrino, R., Picollo, Federico, Pomorski, M., Potenza, R., Quadt, A., Re, Alessandro, Riley, G., Roe, S., Sapinski, M., Scaringella, M., Schnetzer, S., Schreiner, T., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Sfyrla, A., Shimchuk, G., Smith, S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Taylor, A., Traeger, M., Tromson, D., Trischuk, W., Tuve, C., Uplegger, L., Velthuis, J., Venturi, N., Vittone, Ettore, Wagner, S., Wallny, R., Wang, J. C., Weilhammer, P., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., and Zavrtanik, M.

Subjects
Physics, Diamond detectors, Radiation-hard detectors, Large Hadron Collider, Luminosity (scattering theory), Physics::Instrumentation and Detectors, business.industry, Detector, Diamond, Chemical vapor deposition, engineering.material, law.invention, Nuclear physics, Telescope, Upgrade, Optics, law, Diamond Detectors, Radiation-hard detectors, engineering, High Energy Physics::Experiment, business, Instrumentation, Diamond detectors, Mathematical Physics, Beam (structure)
Abstract

With the first three years of the LHC running complete, ATLAS and CMS are planning to upgrade their innermost tracking layers with more radiation hard technologies. Chemical Vapor Deposition (CVD) diamond is one such technology. CVD diamond has been used extensively in beam condition monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. The lessons learned in constructing the ATLAS Beam Conditions Monitor (BCM), Diamond Beam Monitor (DBM) and the CMS Pixel Luminosity Telescope (PLT) all of which are based on CVD diamond with the goal of elucidating the issues that should be addressed for future diamond based detector systems. The first beam test results of prototype diamond devices with 3D detector geometry should further enhance the radiation tolerance of this material.

Published
2015

38. A modified drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors

Author

García López, J., Jiménez-Ramos, M. C., Rodríguez-Ramos, M., Forneris, Jacopo, and Ceballos-Cáceres, J.

Abstract

Resumen del trabajo presentado a la 22nd International Conference on Ion Beam Analysis, celebrada en Opatija (Croacia) del 14 al 19 de junio de 2015., The transport properties of a series of n and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons and fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using a modified drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations.

Published
2015

39. Beam test results of the dependence of signal size on incident particle flux in diamond pixel and pad detectors

Author

Wallny, R., Artuso, M., Bachmair, F., Bani, L., Bartosik, M., Beacham, J., Bellini, V., Belyaev, V., Bentele, B., Berdermann, E., Bergonzo, P., Bes, A., Brom, J. M., Bruzzi, M., Cerv, M., Chau, C., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Costa, S., Cumalat, J., Dabrowski, A., D’Alessandro, R., de Boer, W., Dehning, B., Dobos, D., Dunser, M., Dulinski, W., Eremin, V., Eusebi, R., Forcolin, G., Forneris, Jacopo, Frais Kolb, H., Gan, K. K., Gastal, M., Goffe, M., Goldstein, J., Golubev, A., Gonella, L., Gorisek, A., Graber, L., Grigoriev, E., Grosse Knetter, J., Guthoff, M., Haughton, I., Hidas, D., Hits, D., Hoeferkamp, M., Hofmann, T., Hosslet, J., Hostachy, J. Y., Hugging, F., Jansen, H., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kassel, F., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., LO GIUDICE, Alessandro, Maazouzi, C., Mandic, I., Manfredotti, C., Mathieu, C., Mcfadden, N., Mcgoldrick, G., Menichelli, M., Mikuz, M., Morozzi, A., Moss, J., Mountain, R., Murphy, S., Oakham, G., Oh, A., Olivero, Paolo, Parrini, G., Passeri, D., Pauluzzi, M., Pernegger, H., Perrino, R., Picollo, Federico, Pomorski, M., Potenza, R., Quadt, A., Re, Alessandro, Riley, G., Roe, S., Sapinski, M., Scaringella, M., Schnetzer, S., Schreiner, T., Sciortino, S., Scorzoni, A., Seidel, S., Servoli, L., Sfyrla, A., Shimchuk, G., Smith, S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Taylor, A., Traeger, M., Tromson, D., Trischuk, W., Tuve, C., Uplegger, L., Velthuis, J., Venturi, N., Vittone, Ettore, Wagner, S., Wang, J. C., Weilhammer, P., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., and Zavrtanik, M.

Subjects
Materials science, Physics::Instrumentation and Detectors, Astrophysics::High Energy Astrophysical Phenomena, Flux, Chemical vapor deposition, engineering.material, 01 natural sciences, Fluence, Diamond Detectors, Optics, Particle tracking detectors, 0103 physical sciences, Neutron, Irradiation, Detectors and Experimental Techniques, Solid state detectors, 010306 general physics, Instrumentation, Mathematical Physics, Range (particle radiation), Luminosity (scattering theory), 010308 nuclear & particles physics, business.industry, Diamond, Radiation-hard detectors, engineering, Optoelectronics, business
Abstract

We present results of beam tests of charged particle detectors based on single-crystal and poly-crystalline Chemical Vapor Deposition (CVD) diamond. We measured the signal pulse height dependence on the particle flux. The detectors were tested over a range of particle fluxes from 2 kHz/cm2 to 20 MHz/cm2. The pulse height of the sensors was measured with pad and pixel readout electronics. The pulse height of the non-irradiated single-crystal CVD diamond pad sensors was stable with respect to flux, while the pulse height of irradiated single-crystal CVD diamond pad sensors decreased with increasing particle flux. The pulse height of the non-irradiated single-crystal CVD diamond pixel detectors decreased slightly with increasing particle flux while the pulse height of the irradiated single-crystal CVD diamond pixel detectors decreased significantly with increasing particle flux. The observed sensitivity to flux is similar in both the diamond pad sensors constructed using diamonds from the Pixel Luminosity Telescope (PLT) irradiated during its pilot run in the Compact Muon Solenoid (CMS) detector and in neutron irradiated diamond pad sensors from the same manufacturer irradiated to the same fluence of neutrons. The pulse height for irradiated poly-crystalline CVD diamond pad sensors proved to be stable with respect to particle flux., Journal of Instrumentation, 10 (7), ISSN:1748-0221

Published
2015

40. An upgraded drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors

Author

García López, J., Jiménez-Ramos, M. C., Rodríguez-Ramos, M., Forneris, Jacopo, Ceballos-Cáceres, J., García López, J., Jiménez-Ramos, M. C., Rodríguez-Ramos, M., Forneris, Jacopo, and Ceballos-Cáceres, J.

Abstract

The transport properties of a series of n- and p-type Si diodes have been studied by the ion beam induced charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons at fluences ranging from 1 × 1012 to 1 × 1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using an upgraded drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered as much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations.

Published
2016

43. Electrical stimulation of non-classical photon emission from diamond color centers by means of sub-superficial graphitic electrodes

Author

Forneris, Jacopo, primary, Traina, Paolo, additional, Monticone, Daniele Gatto, additional, Amato, Giampiero, additional, Boarino, Luca, additional, Brida, Giorgio, additional, Degiovanni, Ivo P., additional, Enrico, Emanuele, additional, Moreva, Ekaterina, additional, Grilj, Veljko, additional, Skukan, Natko, additional, Jakšić, Milko, additional, Genovese, Marco, additional, and Olivero, Paolo, additional

Published
2015
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45. Recent results on diamond radiation tolerance

Author

Seidel, S., Artuso, M., Bachmair, F., Bani, L., Bartosik, M., Beacham, J., Bellini, V., Belyaev, V., Bentele, B., Berdermann, E., Bergonzo, P., Bes, A., Brom, J. M., Bruzzi, M., Cerv, M., Chau, C., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Costa, S., Cumalat, J., Dabrowski, A., D’Alessandro, R., de Boer, W., Dehning, B., Dobos, D., Dunser, M., Dulinski, W., Eremin, V., Eusebi, R., Forcolin, G., Forneris, Jacopo, Frais Kolb, H., Gan, K. K., Gastal, M., Goffe, M., Goldstein, J., Golubev, A., Gonella, L., Gorisek, A., Graber, L., Grigoriev, E., Grosse Knetter, J., Guthoff, M., Haughton, I., Hidas, D., Hits, D., Hoeferkamp, M., Hofmann, T., Hosslet, J., Hostachy, J. Y., Hugging, F., Jansen, H., Janssen, J., Kagan, H., Kanxheri, K., Kasieczka, G., Kass, R., Kassel, F., Kis, M., Kramberger, G., Kuleshov, S., Lacoste, A., Lagomarsino, S., LO GIUDICE, Alessandro, Maazouzi, C., Mandic, I., Manfredotti, C., Mathieu, C., Mcfadden, N., Mcgoldrick, G., Menichelli, M., Mikuz, M., Morozzi, A., Moss, J., Mountain, R., Murphy, S., Oakham, G., Oh, A., Olivero, P., Parrini, G., Passeri, D., Pauluzzi, M., Pernegger, H., Perrino, R., Picollo, Federico, Pomorski, M., Potenza, R., Quadt, A., Re, A., Riley, G., Roe, S., Sapinski, M., Scaringella, M., Schnetzer, S., Schreiner, T., Sciortino, S., Scorzoni, A., Servoli, L., Sfyrla, A., Shimchuk, G., Smith, S., Sopko, B., Sopko, V., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Sutera, C., Taylor, A., Traeger, M., Tromson, D., Trischuk, W., Tuve, C., Uplegger, L., Velthuis, J., Venturi, N., Vittone, Ettore, Wagner, S., Wallny, R., Wang, J. C., Weilhammer, P., Weingarten, J., Weiss, C., Wengler, T., Wermes, N., Yamouni, M., and Zavrtanik, M.

Subjects
Materials science, Monte Carlo method, Diamond, Particle detectors, Chemical vapor deposition, engineering.material, Fluence, Diamond Detectors, Materials for solid-state detectors, Electrical resistivity and conductivity, Atom, engineering, Radiation-hard detectors, Instrumentation, Mathematical Physics, Irradiation, Detectors and Experimental Techniques, Atomic physics, Radiation hardening
Abstract

Results are presented on two topics associated with prediction and measurement of the radiation hardness of diamond sensors in environments relevant to detector tracking systems at the HL-LHC. In the first suite of studies, diamond sensors are exposed to particle beams of a variety of energies and species. The damage incurred is compared to predictions by the Monte Carlo simulation package FLUKA incorporating the number of displacements per atom (DPA) according to the model by Norgert, Robinson, and Torrens. In the second study, the resistivity of polycrystalline chemical vapor deposition diamond sensors is inferred from measurements of the leakage current for a range of bias voltages on samples irradiated with 800 MeV protons up to 1.6 × 10(16) p/cm(2). The devices' resistivity is extracted for temperatures in the −10°C to +20°C range and found to be independent of fluence and temperature over the ranges studied.

Published
2014

47. Development and Characterization of a Diamond-Insulated Graphitic Multi Electrode Array Realized with Ion Beam Lithography.

Author

Picollo, Federico, Battiato, Alfio, Carbone, Emilio, Croin, Luca, Enrico, Emanuele, Forneris, Jacopo, Gosso, Sara, Olivero, Paolo, Pasquarelli, Alberto, and Carabelli, Valentina

Subjects
ELECTRODES, ION beam lithography, INDUSTRIAL use of ion bombardment, NEUROENDOCRINE cells, NEURONS
Abstract

The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity ~mΩ⋅cm) by exploiting the metastable nature of this allotropic form of carbon. A 16-channels MEA (Multi Electrode Array) suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5 x 4.5 x 0.5 mm³) to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release. [ABSTRACT FROM AUTHOR]

Published
2015
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48. Latest Results on the Radiation Tolerance of Diamond Detectors

Author

Daniele Passeri, Jacopo Forneris, Federico Picollo, Monica Scaringella, Thomas Hofmann, Keida Kanxheri, J. Goldstein, M. Gastal, K. K. Gan, N. Wermes, Marco Truccato, Aidan Grummer, Denis Dauvergne, M. Bartosik, Raffaello D'Alessandro, Mara Bruzzi, Chris Hutton, John Perry Cumalat, M. Traeger, Wim De Boer, M. Dunser, Harris Kagan, R. Wallny, Andrej Gorišek, J. Moss, R. Mountain, Re Alessandro, A. Quadt, Fabian Hügging, Laurent Gallin-Martel, A. Scorzoni, Stefano Lagomarsino, Jean-Marie Brom, Ivan Lopez Paz, I. Mandic, Andreas Alexopoulos, M. Pomorski, B. Sopko, Bojan Hiti, M. Yamouni, C. Tuve, Stefan M Spanier, J. Grosse-Knetter, Christian Dorfer, S. Spagnolo, J. J. Velthuis, R. Kass, M. Goffe, M. Hoeferkamp, W. Trischuk, Moritz Guthoff, Vladimir Cindro, Arianna Morozzi, M. Menichelli, V. Sopko, Helge Christoph Beck, V. Bellini, J. Hosselet, V. Belyaev, D. Hits, Marko Mikuz, M.-L. Gallin-Martel, A. Golubev, Sally Seidel, V. Eremin, Christian Schmidt, D.S. Smith, S. Roe, Silvio Sciortino, Roberto Perrino, B. Stugu, B. Bentele, Jens Janssen, Paolo Olivero, Alessandro Lo Giudice, N. Venturi, Ana Lacoste, Justas Zalieckas, F. Rarbi, Marina Artuso, M. Zavrtanik, Lukas Baeni, C. M. Sutera, S. Kuleshov, C. Mathieu, J. Collot, Diego Alejandro Sanz Becerra, M. Kis, Michael Philipp Reichmann, Enrico Junior Schioppa, G. Chiodini, G. Forcolin, A. Bes, D. Chren, L. Servoli, S. Wagner, C. Maazouzi, Eric Lukosi, E. Grigoriev, Oh Alexander, Jing Wang, H. Pernegger, Robert Stone, A. Dabrowski, G. Eigen, F. Bachmair, Kevin Stenson, S. Schnetzer, G. Claus, R. Potenza, G. Kramberger, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut Pluridisciplinaire Hubert Curien (IPHC), Université de Strasbourg (UNISTRA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Rd42, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Baeni, Luka, Alexopoulos, Andrea, Artuso, Marina, Bachmair, Felix, Bartosik, Marcin Ryszard, Beck, Helge Christoph, Bellini, Vincenzo, Belyaev, Vladimir, Bentele, Benjamin, Bes, Alexandre, Brom, Jean-Marie, Bruzzi, Mara, Chiodini, Gabriele, Chren, Dominik, Cindro, Vladimir, Claus, Gille, Collot, Johann, Cumalat, John, Dabrowski, Anne, D'Alessandro, Raffaello, Dauvergne, Deni, De Boer, Wim, Dorfer, Christian, Dunser, Marc, Eigen, Gerald, Eremin, Vladimir, Forcolin, Giulio Tiziano, Forneris, Jacopo, Gallin-Martel, Laurent, Gallin-Martel, Marie-Laure, Gan, K. K., Gastal, Martin, Goffe, Mathieu, Goldstein, Joel, Golubev, Alexander, Gorišek, Andrej, Grigoriev, Eugene, Grosse-Knetter, Jörn, Grummer, Aidan, Guthoff, Moritz, Hiti, Bojan, Hits, Dmitry, Hoeferkamp, Martin Robert, Hofmann, Thoma, Hosselet, Jérôme, Hügging, Fabian, Hutton, Chri, Janssen, Jen, Kagan, Harri, Kanxheri, Keida, Kass, Richard, Kis, Mladen, Kramberger, Gregor, Kuleshov, Sergey, Lacoste, Ana, Lagomarsino, Stefano, Lo Giudice, Alessandro, Lopez Paz, Ivan, Lukosi, Eric, Maazouzi, Chaker, Mandić, Igor, Mathieu, Cédric, Menichelli, Mauro, Mikuz, Marko, Morozzi, Arianna, Moss, Joshua, Mountain, Raymond, Oh, Alexander, Olivero, Paolo, Passeri, Daniele, Pernegger, Heinz, Perrino, Roberto, Picollo, Federico, Pomorski, Michal, Potenza, Renato, Quadt, Arnulf, Rarbi, Fatah Ellah, Re, Alessandro, Reichmann, Michael Philipp, Roe, Shaun, Sanz Becerra, Diego Alejandro, Scaringella, Monica, Schmidt, Christian, Schnetzer, Stephen, Schioppa, Enrico Junior, Sciortino, Silvio, Scorzoni, Andrea, Seidel, Sally, Servoli, Leonello, Smith, Dale Shane, Sopko, Bruno, Sopko, Vit, Spagnolo, Stefania, Spanier, Stefan, Stenson, Kevin, Stone, Robert, Stugu, Bjarne, Sutera, Concetta Maria, Traeger, Michael, Trischuk, William, Truccato, Marco, Tuve, Cristina, Velthuis, Jaap, Venturi, Nicola, Wagner, Stephen, Wallny, Rainer, Wang, J. C., Wermes, Norbert, Yamouni, Mahfoud, Zalieckas, Justa, Zavrtanik, Marko, Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
radiation tolerance, diamond detectors, Materials science, Nuclear Theory, Diamond, Chemical vapor deposition, engineering.material, Radiation tolerance, n: irradiation, engineering, Radiation damage, Physics::Accelerator Physics, Neutron, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Atomic physics, Nuclear Experiment, solid-state counter: diamond, Diamond detector, performance, radiation: damage, p: irradiation
Abstract

International audience; We have measured the radiation tolerance of chemical vapor deposition (CVD) diamond against protons and neutrons. The relative radiation damage constant of 24 GeV protons, 800 MeV protons, 70 MeV protons, and fast reactor neutrons is presented. The results are used to combine the measured data into a universal damage curve for diamond material.

Published
2019

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