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6. Simulation of Transport in Nanodevices

Author

François Triozon, Philippe Dollfus, François Triozon, Philippe Dollfus and François Triozon, Philippe Dollfus, François Triozon, Philippe Dollfus

Published
2016

10. Electronic and Thermal Properties of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ Superlattices by ab-initio Approach: Impact of Van der Waals Gaps on Vertical Lattice Thermal Conductivity

Author

Michel Frei, Jing Li, C. Sabbione, Gabriele Navarro, Benoit Sklenard, Lavinia Nistor, and François Triozon

Subjects
Resistive touchscreen, Work (thermodynamics), Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Superlattice, Stacking, Ab initio, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, symbols.namesake, Thermal engineering, Thermal, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), symbols, van der Waals force
Abstract

In the last decade, several works have focused on exploring the material and electrical properties of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ superlattices (SLs) in particular because of some first device implementations demonstrating interesting performances such as fast switching speed, low energy consumption, and non-volatility. However, the switching mechanism in such SL-based devices remains under debate. In this work, we investigate the prototype $\text{GeTe/Sb}_{2}\text{Te}_{3}$ SLs, to analyze fundamentally their electronic and thermal properties by ab initio methods. We find that the resistive contrast is small among the different phases of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ because of a small electronic gap (about 0.1 eV) and a consequent semi-metallic-like behavior. At the same time the out-of-plane lattice thermal conductivity is rather small, while varying up to four times among the different phases, from 0.11 to 0.45 W/m$^{-1}$K$^{-1}$, intimately related to the number of Van der Waals (VdW) gaps in a unit block. Such findings confirm the importance of the thermal improvement achievable in $\text{GeTe/Sb}_{2}\text{Te}_{3}$ super-lattices devices, highlighting the impact of the material stacking and the role of VdW gaps on the thermal engineering of the Phase-Change Memory cell., Comment: 5 pages, 3 figures

Published
2021
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11. MOS-like approach for compact modeling of High-Electron-Mobility Transistor

Author

Rene Escoffier, Sebastien Martinie, Thierry Poiroux, Marie-Anne Jaud, Olivier Rozeau, François Triozon, and Adrien Vaysset

Subjects
010302 applied physics, Materials science, business.industry, Band gap, Transistor, Spice, Inversion (meteorology), 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, law, Quantum dot, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Fermi gas, Quantum
Abstract

High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculated from the quantum expression of a 2-dimensional electron gas (2DEG). Here, we investigate the possibility to model HEMTs with a MOSFET-like approach whereby quantum confinement is included as an effective bandgap widening in the surface potential equation. We evidence that such a MOSFET-like approach leads to a more accurate description over the whole polarization range, especially in the moderate inversion regime. This analytical model is validated by Poisson-Schrodinger numerical simulations. Furthermore, to address a specific feature of HEMT devices, a field plate model is also presented.

Published
2020

12. Plane-wave many-body corrections to the conductance in bulk tunnel junctions

Author

Valerio Olevano, Benoit Sklenard, François Triozon, Alberto Dragoni, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Théorie de la Matière Condensée (NEEL - TMC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)

Subjects
Physics, [PHYS]Physics [physics], Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Band gap, Landauer formula, Plane wave, FOS: Physical sciences, Conductance, 02 engineering and technology, Electronic structure, Computational Physics (physics.comp-ph), 021001 nanoscience & nanotechnology, 01 natural sciences, Hybrid functional, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Quasiparticle, Density functional theory, Quantum Physics (quant-ph), 010306 general physics, 0210 nano-technology, Physics - Computational Physics
Abstract

The conductance of bulk metal--insulator--metal junctions is evaluated by the Landauer formula using an \textit{ab initio} electronic structure calculated using a plane-waves basis set within density-functional theory (DFT) and beyond, i.e.\ including exact non-local exchange using hybrid functional (HSE) or many-body $G_0W_0$ and COHSEX quasiparticle (QP) schemes. We consider an Ag/MgO/Ag heterostructure model and we focus on the evolution of the zero-bias conductance as a function of the MgO film thickness. Our study shows that the correction of the electronic structure beyond semi-local density functionals goes in the right direction to improve the agreement with experiments, significantly reducing the zero-bias conductance. This effect becomes more evident at larger MgO thickness, that is in increasing tunneling regime. We also observe that the reduction of the conductance seems more related to the correction of wavefunctions rather than energies, and thus not directly related to the correction of the band-gap of bulk MgO. $G_0W_0$ and HSE both provide a correct band-gap in agreement with experiments, but only HSE gives a significant reduction of the conductance. COHSEX, while overestimating the band-gap, gives a reduction of the conductance very close to HSE., Comment: 11 pages, 12 figures

Published
2020

13. Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application

Author

Maud Vinet, M. Aouad, Sebastien Martinie, François Triozon, Gerard Ghibaudo, and Thierry Poiroux

Subjects
010302 applied physics, Physics, Silicon, Heaviside step function, Circuit design, Semiconductor device modeling, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Capacitance, Computational physics, symbols.namesake, chemistry, CMOS, 0103 physical sciences, MOSFET, symbols, 0210 nano-technology
Abstract

Poisson-Schrodinger (PS) simulations and an analytical charge model for a back biased FDSOI structure operated at deep cryogenic temperatures have been developed. PS simulations has been conducted down to 0K, where metallic statistics applies, by replacing the F0 Fermi integral by a Heaviside function. Considering, as a first approximation, two separated channels for front and back interface, a set of analytical equations has been established based on a single subband scheme within the Airy approach, providing a good description of surface potential, inversion charge and capacitance characteristics of FDSOI structures operated at very low temperature and for various back biases and silicon thicknesses. This analytical charge model is a first step towards a compact model of FDSOI MOSFET for circuit design at cryogenic condition.

Published
2020
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14. Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder

Author

Mireille Mouis, Kan-Hao Xue, Jejune Park, François Triozon, Alessandro Cresti, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Huazhong University of Science and Technology [Wuhan] (HUST), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)

Subjects
Materials science, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electron transport chain, chemistry.chemical_compound, chemistry, Chemical physics, 0103 physical sciences, Grain boundary, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Molybdenum disulfide, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

15. Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application

Author

Maud Vinet, M. Aouad, Sebastien Martinie, Gerard Ghibaudo, François Triozon, and Thierry Poiroux

Subjects
010302 applied physics, Physics, Silicon, Heaviside step function, Circuit design, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, Computational physics, symbols.namesake, chemistry, CMOS, 0103 physical sciences, MOSFET, Materials Chemistry, symbols, Fermi–Dirac statistics, Electrical and Electronic Engineering, 0210 nano-technology, Fermi Gamma-ray Space Telescope
Abstract

Poisson-Schrodinger (PS) simulations and an analytical charge model for a back biased FDSOI structure operated at deep cryogenic temperatures have been developed. PS simulations have been conducted down to 0 K, where metallic statistics applies, by replacing the F0 Fermi integral by a Heaviside function. Considering, as a first approximation, two separated channels for front and back interface, a set of implicit equations has been established based on a single subband scheme within the Airy approach, providing a good description of surface potential, inversion charge and capacitance characteristics of FDSOI structures operated at very low temperature and for various back biases and silicon thicknesses. This analytical charge model is a first step towards a compact model of FDSOI MOSFET for circuit design at cryogenic condition.

Published
2021

16. Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Author

Jérôme Biscarrat, François Triozon, Bledion Rrustemi, Charles Leroux, William Vandendaele, Marie-Anne Jaud, Cyrille Le Royer, Gerard Ghibaudo, and Clémentine Piotrowicz

Subjects
Range (particle radiation), Materials science, business.industry, Interface (computing), General Physics and Astronomy, Optoelectronics, Heterojunction, Charge (physics), Polarization (electrochemistry), Fermi gas, business, Capacitance, Layer (electronics)
Abstract

In SiN/AlGaN/GaN heterostructures, the evaluation of interface charges at the SiN/AlGaN and AlGaN/GaN interfaces is crucial since they both rule the formation of the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. In this paper, we conducted a thorough analysis of the gate-to-channel capacitance CGC(VG) and of the drain current ID(VG) over a gate voltage VG range enabling the depletion of the 2DEG and the formation of the electron channel at the SiN/AlGaN interface. This work includes the establishment of analytical equations for VTH1 (formation of the 2DEG) and VTH2 (formation of the electron channel at the SiN/AlGaN interface) as a function of interface charges and of the p-doping below the 2DEG. The inclusion of the p-doped layer below the 2DEG and the use we made of VTH2 have not been reported in previous studies. Our analysis allows a reliable estimate of the interface charges at the AlxGa1−xN/GaN and SiN/AlxGa1−xN interfaces for various Al concentrations x as well as to demonstrate that the polarization charge at the SiN/AlxGa1−xN interface is compensated, which confirms previous findings. Moreover, this compensation is found to be induced by the AlGaN layer rather than the SiN layer.

Published
2021

17. Impact of edge roughness on the electron transport properties of MoS2 ribbons

Author

François Triozon, Alessandro Cresti, Jejune Park, Mireille Mouis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)

Subjects
[PHYS]Physics [physics], Materials science, Condensed matter physics, Mean free path, General Physics and Astronomy, Conductance, 02 engineering and technology, Surface finish, Edge (geometry), 021001 nanoscience & nanotechnology, 01 natural sciences, Electron transport chain, [SPI]Engineering Sciences [physics], Nanoelectronics, 0103 physical sciences, Ribbon, Nanometre, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology
Abstract

International audience; Edge roughness is expected to play a major role in narrow ribbons obtained from two-dimensional materials, due to the large length/surface ratio of the disordered edges with respect to the whole system surface. In the case of semiconducting transition metal dichalcogenides, a physical and quantitative understanding of the impact of edge roughness on the transport properties of ribbons with nanometer widths is essential in view of their potential applications in ultrascaled nanoelectronics. By means of atomistic quantum transport simulations, we show that the conductance due to edge states within the bulk gap is strongly suppressed by roughness. The corresponding localization length is found to be in the order of few nanometers. At low carrier energies outside the gap, edge roughness drives the system into the diffusive transport regime. The study of the mean free path, under different conditions of roughness and for different ribbon widths, shows that the conductance is moderately affected for widths above 10 nm and lengths in the order of 100 nm, with a more significant degradation for ultra-narrow ribbons

Published
2018

18. Carrier mobilities and contact resistances in nanowire devices

Author

L. Bourdet, François Triozon, Zaiping Zeng, and Yann-Michel Niquet

Subjects
Materials science, chemistry, Mobilities, business.industry, Scattering, Logic gate, Nanowire, Optoelectronics, chemistry.chemical_element, business, Hafnium
Abstract

We discuss the modeling of carrier mobilities and contact resistances in nanowire-based devices such as FinFETs. We show that Non-Equilibrium Green's Functions provide a comprehensive picture of the transport in these devices, and discuss some aspects of their physics.

Published
2018

19. Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures

Author

Marco G. Pala, Alessandro Cresti, Jiang Cao, François Triozon, Jejune Park, Tyndall National Institute [Cork], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)

Subjects
Materials science, nonequilibrium G reen’s functions, Ocean Engineering, 02 engineering and technology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Planar, quantum transport simulation, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, Quantum tunnelling, 010302 applied physics, business.industry, tunnel field-effect transistor, Transistor, 2 D materials, Heterojunction, 021001 nanoscience & nanotechnology, Tunnel field-effect transistor, Nanoelectronics, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Realization (systems)
Abstract

International audience; Thanks to their thinness, self-passivated surface and large variety, two-dimensional materials have attracted much interest for their possible application in nanoelectronics. In particular, semiconducting transition metal dichalcogenides and their van der Waals heterostructures are very promising for the realization of low-power tunnel fieldeffect transistors. By means of self-consistent quantum transport simulations, we explore the performances of two alternative architectures for the devices: the planar architecture and the vertical architecture. While for the former, which is based on a p-i-n junction, the tunneling occurs laterally within the same two-dimensional material layer, in the latter the tunneling occurs through the vertical heterostructure between two different materials, which are chosen to have a convenient band alignment. Our results enable a comparison of the performance of two architectures in the ideal case, and can serve as a first guide for the choice of the transistor design based on the desired application.

Published
2018

20. Optical vs electronic gap of hafnia by ab initio Bethe-Salpeter equation

Author

François Triozon, Valerio Olevano, Benoit Sklenard, Alberto Dragoni, Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Théorie de la Matière Condensée (TMC ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Théorie de la Matière Condensée (NEEL - TMC)

Subjects
GW approximation, Physics, Condensed Matter - Materials Science, Bethe–Salpeter equation, Physics and Astronomy (miscellaneous), Band gap, Physics::Optics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, Electronic structure, 021001 nanoscience & nanotechnology, 01 natural sciences, 3. Good health, Condensed Matter::Materials Science, Core electron, Computer Science::Systems and Control, 0103 physical sciences, Quasiparticle, Density of states, Projector augmented wave method, Atomic physics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology
Abstract

We present first-principles many-body perturbation theory calculations of the quasiparticle electronic structure and of the optical response of HfO$_2$ polymorphs. We use the $GW$ approximation including core electrons by the projector augmented wave (PAW) method and performing a quasiparticle self-consistency also on wavefunctions (QS$GW$). In addition, we solve the Bethe-Salpeter equation on top of $GW$ to calculate optical properties including excitonic effects. For monoclinic HfO$_2$ we find a fundamental band gap of $E_g = 6.33$ eV (with the direct band gap at $E_g^d = 6.41$ eV), and an exciton binding energy of 0.57 eV, which situates the optical gap at $E^o_g = 5.85$ eV. The latter is in the range of spectroscopic ellipsometry (SE) experimental estimates (5.5-6 eV), whereas our electronic band gap is well beyond experimental photoemission (PE) estimates ($< 6$ eV) and previous $GW$ works. Our calculated density of states and optical absorption spectra compare well to raw PE and SE spectra. This suggests that our predictions of both optical and electronic gaps are close to, or at least lower bounds of, the real values., 7 pages, 8 figures, 4 tables

Published
2018
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21. Performance and Design Considerations for Gate-All-Around Stacked-NanoWires FETs

Author

C. Vizioz, J.M. Hartmann, Maud Vinet, Sotirios Athanasiou, Jean-Charles Barbe, Francois Andrieu, Sebastien Martinie, Thomas Ernst, Olivier Rozeau, C. Comboroure, V. Lapras, Marie-Anne Jaud, François Triozon, Bernard Previtali, Joris Lacord, M.-P. Samson, Sylvain Barraud, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), and European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016)

Subjects
010302 applied physics, Flexibility (engineering), Electron mobility, Materials science, Transistor, Nanowire, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Engineering physics, Capacitance, law.invention, Gallium arsenide, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, law, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0210 nano-technology, Nanosheet
Abstract

International audience; This paper presents recent progress on Gate-All-Around (GAA) stacked-NanoWire (NW) / NanoSheet (NS) MOSFETs. Key technological challenges will be discussed and recent research results presented. Width-dependent carrier mobility in Si NW/NS and FinFET will be analyzed, and intrinsic performance and design considerations of GAA structures will be discussed and compared to FinFET devices with a focus on electrostatics, parasitic capacitances and different layout options. The results show that more flexibility can be achieved with stacked-NS transistors in order to manage power-performance optimization.

Published
2017

22. An improved mobility model for FDSOI TriGate and other multi-gate Nanowire MOSFETs down to nanometer-scaled dimensions

Author

J. Pelloux-Prayer, Mikael Casse, Zaiping Zeng, S. Barraud, G. Reimbold, François Triozon, Yann-Michel Niquet, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Deutsch, Thierry

Subjects
010302 applied physics, Electron mobility, Mobility model, Materials science, business.industry, Nanowire, 02 engineering and technology, Experimental validation, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], PMOS logic, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Nanometre, 0210 nano-technology, business, NMOS logic, ComputingMilieux_MISCELLANEOUS, Interpolation
Abstract

We hereby present the experimental validation of a semi-analytical model for the size-dependent carrier mobility in FDSOI TriGate Nanowire transistors. The model is based on simple interpolation between a square narrow Si NW and wide FDSOI or vertical Double Gate (DG) limiting cases. We demonstrate its suitability to NMOS and PMOS devices with various H and W dimensions, as well as for different channel orientations. This model brings significant improvement to the simpler facets model, and evidences the contribution of corner areas.

Published
2017

23. Stacked Nanowires/Nanosheets GAA MOSFET From Technology to Design Enablement

Author

Sylvain Barraud, L. Bourdet, S. Martinia, Joris Lacord, Zaiping Zeng, François Triozon, Yann-Michel Niquet, P. Blaise, Olivier Rozeau, J.-Ch. Barbe, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Engineering, Process Integration, Nanowire, 02 engineering and technology, Benchmark, 01 natural sciences, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], law, Nanosheets, 0103 physical sciences, MOSFET, Process integration, Compact model, Electronic engineering, Leti-NSP, 010302 applied physics, TCAD, business.industry, Nanowires, Contact resistance, Transistor, NEGF, 021001 nanoscience & nanotechnology, CMOS, Benchmark (computing), Node (circuits), MHC, 0210 nano-technology, business
Abstract

International audience; GAA nanowires (NW) transistors are promising candidates for sub 10 nm technology nodes. They offer optimal electrostatic control, thereby enabling ultimate CMOS device scaling. Horizontally stacked they are a natural extension of today's mainstream technology. Considering enlarged NWs in Nanosheets (NS) allows to target the best compromise in power and performance for future applications. In this paper we will first briefly introduce the technology and then review what can bring advanced simulation focusing on both mobility and contact resistance. Then we will focus on devoted compact modeling fed by both TCAD capturing electrostatics of the Device and above mentioned advanced simulation for mobility. Finally we will demonstrate the capability of the model to capture actual hardware data as well as to benchmark the different architectures in competition down to 5 nm technology node.

Published
2017

24. Impact of strain on access resistance in planar and nanowire CMOS devices

Author

Gerard Ghibaudo, Claude Tabone, Emmanuel Josse, Joris Lacord, Franck Arnaud, Remy Berthelon, M. Vinet, Yann-Michel Niquet, C. Le Royer, L. Bourdet, Denis Rideau, Didier Dutartre, O. Rozeau, F. Andneu, Pascal Nguyen, Alain Claverie, M. Casse, S. Barraud, François Triozon, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), nano 2017, ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Materials science, business.industry, Spice, Semiconductor device modeling, Nanowire, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, PMOS logic, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, CMOS, chemistry, Logic gate, 0103 physical sciences, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract

session 17: CMOS integration; International audience; We fabricated and in-depth characterized advanced planar and nanowire CMOS devices, strained by the substrate (sSOI or SiGe channel) and by the process (CESL, SiGe source/drain). We have built a novel access resistance (R ACC ) extraction procedure, which enables us to clearly evidence the strong impact of back-bias and strain on R acc (-21% for 4 V V B and -53% for -1GPa stress on pMOS FDSOI). This is in agreement with Non-Equilibrium-Green-Functions (NEGF) simulations. This RAcc(strain) dependence has been introduced into SPICE, leading to +6% increase of the RO frequency under ε n/p =0.8%/-0.5% strain, compared to the state-of-the-art model. It is thus mandatory for predictive benchmarking and optimized IC designs.

Published
2017

25. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Author

F. Abbate, L. Schneider, Yann-Michel Niquet, G. Mugny, Christophe Delerue, E. Nolot, Denis Rideau, C. Kriso, François Triozon, Clement Tavernier, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics, Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Materials science, 02 engineering and technology, 01 natural sciences, Molecular physics, Optics, Ellipsometry, 0103 physical sciences, Materials Chemistry, Dielectric function, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Varying thickness, Electronic, Optical and Magnetic Materials, Quantum dot, Content (measure theory), Particle, Spectroscopic ellipsometry, 0210 nano-technology, business, Layer (electronics)
Abstract

The optical response of strained SiGe alloys, as well as thin Si layers, is analyzed using a sp 3 d 5 s ∗ tight-binding model within the independent particle approximation. The theoretical results are compared to measurements obtained on samples with various Ge content and layer thicknesses. The dielectric function is extracted from spectroscopic ellipsometry allowing a separation of its real and imaginary parts. Theory and simulation show similar trends for the variation of the dielectric function of SiGe with varying Ge content. Variations are also well reproduced for thin Si layers with varying thickness and are attributed to quantum confinement.

Published
2017

26. Electronic structure and electron mobility in Si 1– x Ge x nanowires

Author

Jing Li, Christophe Delerue, Denis Rideau, Yann-Michel Niquet, G. Mugny, François Triozon, Université de Genève (UNIGE), Théorie de la Matière Condensée (TMC ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Université de Genève = University of Geneva (UNIGE), Théorie de la Matière Condensée (NEEL - TMC), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, [PHYS]Physics [physics], Electron mobility, Physics and Astronomy (miscellaneous), Condensed matter physics, Chemistry, Alloy, Nanowire, 02 engineering and technology, Electronic structure, engineering.material, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, Condensed Matter::Materials Science, Effective mass (solid-state physics), 0103 physical sciences, engineering, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Electronic properties
Abstract

We investigate the electronic structure and the electron mobility in Si1– xGex nanowires for relevant orientations ( ⟨ 001 ⟩ , ⟨ 110 ⟩, and ⟨ 111 ⟩) and diameters up to 8 nm based on atomistic models. The calculation of the electronic structure with random distribution of alloy atoms is compared to the virtual crystal approximation. The electronic properties such as the effective mass and the character of the lowest conduction subband are linked with the strong variations of the phonon-limited electron mobility with varying Ge concentrations. The effect of alloy disorder on the mobility is also discussed.

Published
2017

27. Quantum Modeling of the Carrier Mobility in FDSOI Devices

Author

Denis Rideau, O. Nier, V. H. Nguyen, François Triozon, Ivan Duchemin, Yann-Michel Niquet, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[PHYS]Physics [physics], Electron mobility, Materials science, business.industry, Phonon, Scattering, Induced high electron mobility transistor, Silicon on insulator, Electron, Surface finish, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, business, Technology CAD, ComputingMilieux_MISCELLANEOUS
Abstract

We compute the electron and hole mobilities in ultrathin body and buried oxide, fully depleted silicon on insulator devices with various high-\(\kappa \) metal gate-stacks using nonequilibrium Green's functions (NEGF). We compare our results with experimental data at different back gate biases and temperatures. That way, we are able to deembed the different contributions to the carrier mobility in the films (phonons, front and back interface roughness, and remote Coulomb scattering). We discuss the role played by each mechanism in the front and back interface inversion regimes. We draw attention, in particular, to the clear enhancement of electron- and hole-phonons interactions in the films. These results show that FDSOI devices are a foremost tool to sort out the different scattering mechanisms in Si devices, and that NEGF can provide valuable inputs to technology computer aided design.

Published
2014

32. Performances of Strained Nanowire Devices: Ballistic Versus Scattering-Limited Currents

Author

Yann-Michel Niquet, Frédéric D. R. Bonnet, V. H. Nguyen, and François Triozon

Subjects
Electron mobility, Materials science, Scattering, Phonon, business.industry, Nanowire, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Strain engineering, Ballistic conduction, MOSFET, Electronic engineering, Surface roughness, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

We discuss the performances of (001) and (110) oriented gate-all-around silicon nanowire (Si NW) transistors within a nonequilibrium Green's functions framework, taking surface roughness and phonon scatterings into account. We show, in agreement with previous studies, that uniaxial tensile (respectively, compressive) strains can significantly improve the mobility of electrons (respectively, holes) in the channel. This does not, however, necessarily result in a comparable enhancement of the device performances. Indeed, the current in short channels is limited by both the scattering and the number of sub-bands available for carrier transport in quantum confined systems (intrinsic “ballistic” resistance). The dependence of the mobility and ballistic resistance on strains can be different, which calls for a careful design of the devices. We show, in this respect, that (110) Si NWs provide the best opportunities for strain engineering in ultimate short channel transistors.

Published
2013

33. A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

Author

Davide Garetto, Yann-Michel Niquet, Christophe Delerue, François Triozon, Denis Rideau, G. Mugny, Marco G. Pala, F.G. Pereira, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Synopsys Inc., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Archéologie des Amériques (ArchAm), Université Paris 1 Panthéon-Sorbonne (UP1)-Centre National de la Recherche Scientifique (CNRS), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Physics, Condensed matter physics, Phonon, Quantum potential, Saturation velocity, Silicon on insulator, NEGF, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, QDD, 01 natural sciences, FDSOI, mobility, 0103 physical sciences, MOSFET, Surface roughness, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Quantum, Saturation (magnetic), ComputingMilieux_MISCELLANEOUS, quantum transport
Abstract

session C6L-C: Advanced TCAD Developments; International audience; Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum Drift-Diffusion (QDD) solvers, such as the quasi-Fermi level, the quantum potential and the quasi-ballistic saturation velocity. In particular, the mobility in saturation regime is discussed and an approach based on the Scharfetter-Gummel scheme is presented, bridging the gap between NEGF and QDD frameworks.

Published
2016

34. Carrier scattering by workfunction fluctuations and interface dipoles in high-K/metal gate stacks

Author

Yann-Michel Niquet, Zaiping Zeng, François Triozon, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Deutsch, Thierry

Subjects
010302 applied physics, [PHYS]Physics [physics], Electron mobility, Materials science, Condensed matter physics, Scattering, Carrier scattering, Phonon, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dipole, Stack (abstract data type), 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, Metal gate, business, ComputingMilieux_MISCELLANEOUS, High-κ dielectric
Abstract

International audience; The introduction of a high-κ/metal gate stack in metal-oxide-Semiconductor field-effect transistors can cause a significant degradation of the mobility, especially at weak inversion densities. This degradation is commonly ascribed to remote Coulomb scattering (RCS, i.e., charges trapped at the SiO$_2$/HfO$_2$ interface). However, very large densities of RCS charges are usually needed to reproduce the experimental data. In this work, we explore alternative scattering mechanisms by quantum calculations of the carrier mobilities. We consider, in particular, metal grain workfunction fluctuations and local dipoles at the SiO$_2$/HfO$_2$ interface. Similarly to RCS, both scattering mechanisms are found to reduce the carrier mobility significantly at low carrier densities. However, the mobility exhibits a different dependence on the thickness of high-κ layer, which provides a way to identify the dominant mechanism.

Published
2016

35. High and low-field contact resistances in trigate devices in a Non-Equilibrium Green's Functions framework

Author

Mikael Casse, Denis Rideau, Sebastien Martinie, Yann-Michel Niquet, Sylvain Barraud, Jing Li, L. Bourdet, J. Pelloux-Prayer, François Triozon, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), STMicroelectronics [Crolles] (ST-CROLLES), ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Materials science, Field (physics), Condensed matter physics, Phonon, Scattering, Contact resistance, Doping, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Impurity, Logic gate, 0103 physical sciences, Electronic engineering, Surface roughness, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

We compute the contact resistances at low drain bias in Trigate and FinFET devices with widths and heights in the 4 to 24 nm range, using a Non-Equilibrium Green's Function approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. The analysis of the quasi-Fermi level profile reveals that the areas under the spacers are major contributors to the contact resistance at low field, due to the poor electrostatic control over the carrier density under the spacers. The impact of design parameters (cross-section and doping profile) on the contact resistance is analyzed and the simulations are compared to experimental data. At high drain bias, the contributions of phonons and impurities scattering in the source and drain are also computed and discussed.

Published
2016

36. Contact resistances in Trigate devices in a Non-Equilibrium Green's Functions framework

Author

J. Pelloux-Prayer, Sylvain Barraud, Jing Li, François Triozon, Mikael Casse, Yann-Michel Niquet, L. Bourdet, Sebastien Martinie, and Denis Rideau

Subjects
010302 applied physics, Materials science, Total resistance, Condensed matter physics, Contact resistance, Doping, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Green S, Coulomb scattering, chemistry.chemical_compound, Cross section (physics), chemistry, 0103 physical sciences, Surface roughness, 0210 nano-technology, Doping profile
Abstract

We compute the contact resistances in Trigate and FinFET devices using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that the contact resistance represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. We analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The simulations are compared to experimental data.

Published
2016

37. Introduction to quantum transport

Author

Yann-Michel Niquet, François Triozon, Stephan Roche, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Catalan Institute of Nanoscience and Nanotechnology (ICN2), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Barcelona Institute of Science and Technology (BIST), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Deutsch, Thierry

Subjects
Physics, Landauer–Buttiker formulation, Wavepacket propagation, Green's function, Transmission formalism, 01 natural sciences, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 010305 fluids & plasmas, Macroscopic electrodes, symbols.namesake, Quantum transport, Technological applications, Quantum mechanics, 0103 physical sciences, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 010306 general physics, ComputingMilieux_MISCELLANEOUS
Abstract

This chapter presents a detailed study of wavepacket propagation in various physical situations. This approach provides an intuitive understanding of quantum transport and its semiclassical limit. The chapter addresses the transmission formalism, which treats transport through a small conductor connected to electrodes. It introduces the Landauer–Buttiker formulation of transport, based on the quantum transmission of wavepackets through a conductor connected to electrodes. This formalism is very well suited to the study of electron transport through a small system connected to macroscopic electrodes. The chapter presents a step-by-step introduction to the Green's function method, which allows calculating the quantum transmission efficiently. It highlights the link between the Green's function and wavepacket propagation. Stationary states built from the Green's functions can be viewed as wavepackets with a spatial extension tending to infinity. Simulating transient regimes and noise is of great importance for technological applications.

Published
2016

38. NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs

Author

François Triozon, O. Rozeau, R. Coquand, S. Barraud, Joris Lacord, Sebastien Martinie, J.-Ch. Barbe, Yann-Michel Niquet, Claude Tabone, Thierry Poiroux, E. Augendre, O. Faynot, Maud Vinet, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Partially funded by the French Public Authorities through the NANO 2017, European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Materials science, business.industry, Semiconductor device modeling, Nanowire, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Capacitance, Gallium arsenide, chemistry.chemical_compound, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Planar, chemistry, Quantum dot, Logic gate, 0103 physical sciences, MOSFET, Electronic engineering, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; In this work, a predictive and physical compact model for NanoWire/NanoSheet (NW/NS) Gate-All-Around (GAA) MOSFET is presented. Based on a novel methodology for the calculation of the surface potential including quantum confinement, this model is able to handle arbitrary NW/NS cross-section shape of stacked-planar and vertical GAA MOSFETs (circular, square, rectangular). This Nanowire Surface Potential (NSP) based model, validated both by numerical simulations and experimental data, is demonstrated to be very accurate in all operation regimes of GAA MOSFETs.

Published
2016
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39. Size-dependent carrier mobilities in rectangular silicon nanowire devices

Author

Sylvain Barraud, Zaiping Zeng, Yann-Michel Niquet, François Triozon, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), E. Bär, J. Lorenz, P. Pichler, ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 01 natural sciences, k-nearest neighbors algorithm, Gallium arsenide, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Planar, law, 0103 physical sciences, Thin film, Scaling, 010302 applied physics, [PHYS]Physics [physics], business.industry, Transistor, 021001 nanoscience & nanotechnology, chemistry, Logic gate, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; Multi-gate transistors have attracted considerable attention as a way to overcome the scaling issues of planar MOSFETs. Although the effects of structural confinement on the carrier mobilities have been discussed extensively, the transition from silicon thin films to silicon nanowires (SiNWs) has been little investigated. In this contribution, we perform quantum calculations of the size-dependent carrier mobilities in gate-all-around rectangular SiNWs with leading dimension up to 50 nm, in the non-equilibrium Green's functions (NEGF) framework. We find that when the smallest width or height falls in the sub-10 nm range, nearest neighbor corner channels tend to merge and form "side channels" with much lower mobilities. On top of the numerical results, we have derived a simple model, which bridges square NW devices with thin film devices, and describes the size dependence of the carrier mobilities in rectangular SiNWs in a wide range of dimensions.

Published
2016
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40. Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale

Author

J. Pelloux-Prayer, S. Barraud, François Triozon, Zaiping Zeng, M. Casse, Jean-Luc Rouvière, G. Reimbold, Yann-Michel Niquet, Deutsch, Thierry, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Electron mobility, Materials science, Phonon scattering, Condensed matter physics, Scattering, Phonon, Nanowire, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0103 physical sciences, Surface roughness, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Critical dimension, ComputingMilieux_MISCELLANEOUS
Abstract

We hereby present a study of electron mobility in Tri-gate SOI Nanowire (TGNW) transistors in a wide range of temperature from 20K up to 425K. We compared the temperature dependence for different values of the NW cross-section (width and height) and different crystallographic orientations of the conduction channel. We demonstrate that the electron mobility in narrow TGNWs is limited by surface roughness in the sidewall inversion surface whatever the NW orientation [110]/(100) or [100]/(100). We have also evidenced an enhanced temperature dependence, attributed to phonon scattering, as the cross-section of the NW decreases below a critical dimension (≈80nm).

Published
2016

41. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

Author

François Triozon, S. Barraud, M. Casse, G. Reimbold, Yann-Michel Niquet, Jean-Luc Rouvière, J. Pelloux-Prayer, O. Faynot, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Electron mobility, Silicon, Materials science, Nanowire, Silicon on insulator, Nanotechnology, 02 engineering and technology, 01 natural sciences, MOSFET, 0103 physical sciences, Materials Chemistry, Electron-Mobility, Heterostructures, Electrical and Electronic Engineering, 010302 applied physics, [PHYS]Physics [physics], Strain (chemistry), business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Thermal conduction, Piezoresistive effect, Aspect ratio (image), FDSOI, Electronic, Optical and Magnetic Materials, MultiGate, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; The effect of strain on carrier mobility in triple gate Fully Depleted Silicon On Insulator (FDSOI) nanowires (NWs) is experimentally investigated through piezoresistance measurements. The piezoresitive coefficients have been extracted and analyzed for rectangular cross-section with varying aspect ratio (width vs. height). We propose an empirical model based on mobility separation between top and sidewall conduction surfaces of the NWs, and on the carrier density calculation in the cross-section of the NWs. The model allows fitting the piezoresistive coefficients and the carrier mobility for the different device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel thickness below 11 nm. (C) 2016 Elsevier Ltd. All rights reserved.

Published
2016

42. Conductance of functionalized nanotubes, graphene and nanowires: from ab initio to mesoscopic physics

Author

François Triozon, Stephan Roche, Blanca Biel, Marivi Fernandez-Serra, Xavier Blase, Christophe Adessi, Elena R. Margine, and Alejandro Lopez-Bezanilla

Subjects
Mesoscopic physics, Materials science, Graphene, law, Doping, Ab initio, Nanowire, Conductance, Nanotechnology, Condensed Matter Physics, Graphene nanoribbons, Electronic, Optical and Magnetic Materials, law.invention
Published
2010

43. Carbon nanotube chemistry and assembly for electronic devices

Author

Xavier Blase, Stéphane Campidelli, Nicolas Chimot, Gregory Schmidt, Roland Lefèvre, Alejandro Lopez-Bezanilla, Jean-Philippe Bourgoin, Laurence Goux-Capes, Stéphane Auvray, Julien Borghetti, Pascale Chenevier, Khoa Nguyen, Gaël Robert, Marcelo Goffman, Sylvain Latil, Chia-Ling Chung, Arianna Filoramo, Vincent Derycke, Costin Anghel, Stéphane Streiff, Sébastien Lyonnais, Stephan Roche, and François Triozon

Subjects
Nanoelectromechanical systems, Nanotube, law, Transistor, General Engineering, Energy Engineering and Power Technology, Nanotechnology, Electronics, Carbon nanotube, Energy source, Flexible electronics, law.invention, Electronic circuit
Abstract

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Published
2009

44. Charge transport in carbon nanotubes based materials: a Kubo–Greenwood computational approach

Author

Nobuhiko Kobayashi, Kenji Hirose, Hiroyuki Ishii, François Triozon, and Stephan Roche

Subjects
Materials science, Condensed matter physics, Mean free path, Phonon, Transport coefficient, General Engineering, Energy Engineering and Power Technology, Carbon nanotube, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, law, Ballistic conduction, Kubo formula, Ballistic conduction in single-walled carbon nanotubes, Statistical physics, Scaling
Abstract

In this contribution, we present a numerical study of quantum transport in carbon nanotubes based materials. After a brief presentation of the computational approach used to investigate the transport coefficient (Kubo method), the scaling properties of quantum conductance in ballistic regime as well as in the diffusive regimes are illustrated. The impact of elastic (impurities) and dynamical disorders (phonon vibrations) are analyzed separately, with the extraction of main transport length scales (mean free path and localization length), as well as the temperature dependence of the nanotube resistance. The results are found in very good agreement with both analytical results and experimental data, demonstrating the predictability efficiency of our computational strategy. To cite this article: H. Ishii et al., C. R. Physique 10 (2009).

Published
2009

45. Multiscale simulation of carbon nanotube devices

Author

Arnaud Bournel, Thomas Zimmer, Alejandro Lopez-Bezanilla, Cristell Maneux, Rémi Avriller, Damien Querlioz, Sebastien Fregonese, S. Galdin-Retailleau, H. Nha Nguyen, H. Cazin d'Honincthun, François Triozon, Xavier Blase, Christophe Adessi, Stephan Roche, P. Dollfus, Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Théorie de la Matière Condensée (TMC), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and ANR-06-NANO-0069,ACCENT,Action Calcul Composants En NanoTubes de carbone : simulation multi-échelle, de l'atomistique au circuit(2006)

Subjects
Materials science, Transistor, Monte Carlo method, General Engineering, Energy Engineering and Power Technology, Nanotechnology, 02 engineering and technology, Carbon nanotube, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Quantum transport, law, Ab initio quantum chemistry methods, 0103 physical sciences, Field-effect transistor, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology
Abstract

In recent years, the understanding and accurate simulation of carbon nanotube-based devices has become verychallenging. Conventional simulation tools of microelectronics are necessary to envision the performances and useof nanotube transistors and circuits, but the models need to be refined to properly describe the full complexityof such novel type of devices at the nanoscale. Indeed many issues such as contact resistance, low dimensionalelectrostatics and screening effects, as well as nanotube doping or functionalization, demand for more accuratequantum approaches. In this article, we review our recent progress on multiscale simulations which aim at bridgingfirst principles calculations with compact modelling, including the comparison between semi-classical Monte Carloand quantum transport approaches.R´esum´eSimulation Multi-Echelle des Dispositifs `a Nanotube de CarboneCes derni`eres ann´ees, la compr´ehension et la simulation pr´ecise des dispositifs `a base de nanotubes de car-bone est devenue une tˆache ambitieuse. Les outils de simulation conventionnels de la micro´electronique sontn´ecessaires pour imaginer les performances et l’utilisation des transistors et des circuits `a base de nanotubes,mais les mod`eles doivent ˆetre affin´es pour d´ecrire correctement la complexit´e de ces nouveaux types de dispositifs`a l’´echelle nanom´etrique. En effet, de nombreuses questions comme la r´esistance de contact, l’´electrostatique enbasse dimensionalit´e et les effets d’´ecrantage, et le dopage ou la fonctionnalisation des nanotubes, n´ecessitentdes approches quantiques plus pr´ecises. Dans cet article, nous exposons nos progr`es r´ecents pour des simulationsmulti-´echelles qui visent `a connecter des calculs bas´es sur les premiers principes `a la mod´elisation compacte, enpassant par la comparaison entre les approches Monte Carlo semi-classique et de transport quantique.

Published
2009

46. Orientational Dependence of Charge Transport in Disordered Silicon Nanowires

Author

Martin P. Persson, Yann-Michel Niquet, Aurélien Lherbier, François Triozon, Stephan Roche, Clot, Marielle, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Condensed matter physics, Silicon, Mechanical Engineering, Nanowire, chemistry.chemical_element, Conductance, Bioengineering, Charge (physics), Nanotechnology, 02 engineering and technology, General Chemistry, Electronic structure, Electron, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, chemistry, 0103 physical sciences, General Materials Science, 010306 general physics, 0210 nano-technology, Anisotropy, Electronic band structure, ComputingMilieux_MISCELLANEOUS
Abstract

We report on a theoretical study of surface roughness effects on charge transport in silicon nanowires with three different crystalline orientations, [100], [110] and [111]. Using an atomistic tight-binding model, key transport features such as mean-free paths, charge mobilities, and conductance scaling are investigated with the complementary Kubo-Greenwood and Landauer-Büttiker approaches. The anisotropy of the band structure of bulk silicon results in a strong orientation dependence of the transport properties of the nanowires. The best orientations for electron and hole transport are found to be the [110] and [111] directions, respectively.

Published
2008

47. Charge transport in disordered graphene-based low dimensional materials

Author

Alessandro Cresti, Stephan Roche, Gabriel Niebler, Blanca Biel, François Triozon, Gianaurelio Cuniberti, and Norbert Nemec

Subjects
Physics, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Mean free path, Graphene, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Carbon nanotube, Electronic structure, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, law.invention, Materials Science(all), Nanoelectronics, Zigzag, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Physics::Chemical Physics, Electrical and Electronic Engineering, Graphene nanoribbons, Curse of dimensionality
Abstract

Two-dimensional graphene, carbon nanotubes and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this short review, we consider the transport properties of these materials, with particular emphasis to the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation., Comment: 32 pages, 19 figures, to appear in Nano Research

Published
2008

48. LOW-DIMENSIONAL QUANTUM TRANSPORT PROPERTIES OF CHEMICALLY-DISORDERED CARBON NANOTUBES: FROM WEAK TO STRONG LOCALIZATION REGIMES

Author

Stephan Roche, Rémi Avriller, François Triozon, Sylvain Latil, Xavier Blase, Service de Physique Statistique, Magnétisme et Supraconductivité (SPSMS - UMR 9001), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institució Catalana de Recerca i Estudis Avançats (ICREA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Théorie de la Matière Condensée (NEEL - TMC), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique de la Matière Condensée et Nanostructures (LPMCN), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie des Surfaces et Interfaces (LCSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Théorie de la Matière Condensée (TMC), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon

Subjects
Materials science, Condensed matter physics, Mean free path, Conductance, Statistical and Nonlinear Physics, 02 engineering and technology, Carbon nanotube, Radius, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, law.invention, Magnetic field, law, Ab initio quantum chemistry methods, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Electronic band structure, Scaling, ComputingMilieux_MISCELLANEOUS
Abstract

In this review, the quantum transport of nitrogen-doped metallic carbon nanotubes under magnetic field are explored. An accurate modeling of chemical disorder effects is derived from ab initio calculations. General properties for low bias Landauer conductance are investigated in the coherent regime, which enlighten the strong interplay between band structure and quantum interference effects. Characteristic transport length scales such as the elastic mean free path and localization length are extracted from phenomenological laws as well as scaling features with nanotube radius and doping level. The statistical analysis of conductance properties allow us to study the transition between weak and strong localization regimes.

Published
2007

49. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

Author

Clement Tavernier, O. Nier, M. Casse, Frederic Monsieur, Michel Haond, J-C. Barbe, Herve Jaouen, Joris Lacord, O. Noblanc, G. Torrente, Yann-Michel Niquet, F.G. Pereira, François Triozon, M-A. Jaud, Denis Rideau, STMicroelectronics [Crolles] (ST-CROLLES), Département Géochimie, environnement, écoulement, réacteurs industriels et cristallisation (GENERIC-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-SPIN, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Deutsch, Thierry, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Computer science, Semiconductor device modeling, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Semiconductor process simulation, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Reliability engineering, Reliability (semiconductor), Strain engineering, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Technology CAD, ComputingMilieux_MISCELLANEOUS
Abstract

This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization, strain engineering and device reliability assessment.

Published
2015

50. Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

Author

S. Barraud, Jean-Luc Rouvière, J. Pelloux-Prayer, G. Reimbold, Yann-Michel Niquet, François Triozon, O. Faynot, and M. Casse

Subjects
Electron mobility, Materials science, Silicon, Strain (chemistry), business.industry, Nanowire, Semiconductor device modeling, chemistry.chemical_element, Nanotechnology, Piezoresistive effect, Strain engineering, chemistry, Logic gate, Optoelectronics, business
Abstract

The effect of strain on carrier mobility in triple gate FDSOI nanowires is experimentally investigated through piezoresistance measurements. We propose an empirical model based on simple assumptions that allows fitting the piezoresistive coefficients as well as the carrier mobility for various device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel height below 11nm.

Published
2015

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