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Supported metal nanoparticle (NP) catalysts are vital for the sustainable production of chemicals, but their design and implementation are limited by the ability to identify and characterize their structures and atomic sites that are correlated with high catalytic activity. Identification of these ''active sites'' has relied heavily on extrapolation to supported NP systems from investigation of idealized surfaces, experimentally using single crystals or supported NPs which are always modelled computationally using slab or regular polyhedra models. However, the ability of these methods to predict catalytic activity remains qualitative at best, as the structure of metal NPs in reactive environments has only been speculated from indirect experimental observations, or otherwise remains wholly unknown. Here, by circumventing these limitations for highly accurate simulation methods, we provide direct atomistic insight into the dynamic restructuring of metal NPs by combining in situ spectroscopy with molecular dynamics simulations powered by a machine learned force field. We find that in reactive environments, NP surfaces evolve to a state with poorly defined atomic order, while the core of the NP may remain bulk-like. These insights prove that long-standing conceptual models based on idealized faceting for small metal NP systems are not representative of real systems under exposure to reactive environments. We show that the resultant structure can be elucidated by combining advanced spectroscopy and computational tools. This discovery exemplifies that to enable faithful quantitative predictions of catalyst function and stability, we must move beyond idealized-facet experimental and theoretical models and instead employ systems which include realistic surface structures that respond to relevant physical and chemical conditions., Comment: 18 pages, 11 figures (4 main, 7 SI)

Doped heavy metal-free III-V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals, that are of particular relevance for short wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. We present p-type doping of InAs nanocrystals with Zn-enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping was achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn2+ replacing In3+ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near IR photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short wave IR region utilizing heavy-metal free nanocrystal building blocks., Comment: 36 pages, 6 figures. SI- 17 pages, 10 figures

The activity of metal catalysts depends sensitively on dynamic structural changes that occur during operating conditions. The mechanistic understanding underlying such transformations in small Pt nanoparticles (NPs) of $\sim1-5$ nm in diameter, commonly used in hydrogenation reactions, is currently far from complete. In this study, we investigate the structural evolution of Pt NPs in the presence of hydrogen using reactive molecular dynamics (MD) simulations and X-ray spectroscopy measurements. To gain atomistic insights into adsorbate-induced structural transformation phenomena, we employ a combination of MD based on first-principles machine-learned force fields with extended X-ray absorption fine structure (EXAFS) measurements. Simulations and experiments provide complementary information, mutual validation, and interpretation. We obtain atomic-level mechanistic insights into `order-disorder' structural transformations exhibited by highly dispersed heterogeneous Pt catalysts upon exposure to hydrogen. We report the emergence of previously unknown candidate structures in the small Pt NP limit, where exposure to hydrogen leads to the appearance of a `quasi-icosahedral' intermediate symmetry, followed by the formation of `rosettes' on the NP surface. Hydrogen adsorption is found to catalyze these shape transitions by lowering their temperatures and increasing the apparent rates, revealing the dual catalytic and dynamic nature of interaction between nanoparticle and adsorbate. Our study also offers a new pathway for deciphering the reversible evolution of catalyst structure resulting from the chemisorption of reactive species, enabling the determination of active sites and improved interpretation of experimental results with atomic resolution., Comment: 30 pages, 22 figures (5 main, 17 SI); updated acknowledgements

Tuning of the electronic properties of pre-synthesized colloidal semiconductor nanocrystals (NCs) by doping plays a key role in the prospect of implementing them in printed electronics devices such as transistors, and photodetectors. While such impurity doping reactions have already been introduced, the understanding of the doping process, the nature of interaction between the impurity and host atoms, and the conditions affecting the solubility limit of impurities in nanocrystals are still unclear. Here, we used a post-synthesis diffusion based doping reaction to introduce Ag impurities into InAs NCs. Optical absorption spectroscopy along with analytical inductively coupled plasma mass-spectroscopy (ICP-MS) were used to present a two stage doping model consisting of a "doping region" and a "growth region", depending on the concentration of the impurities in the reaction vessel. X-ray absorption fine-structure (XAFS) spectroscopy was employed to determine the impurity location and correlate between the structural and electronic properties for different sizes of InAs NCs and dopant concentrations. The resulting structural model describes a heterogeneous system where the impurities initially dope the NC, by substituting for In atoms near the surface of the NC, until the "solubility limit" is reached, after which the rapid growth and formation of metallic structures are identified., Comment: Paper - 29 pages, 8 figures SI - 24 pages, 19 figures

Robust control over the carrier type is fundamental for the fabrication of nanocrystal-based optoelectronic devices, such as the p-n homojunction, but effective incorporation of impurities in semiconductor nanocrystals and its characterization is highly challenging due to their small size. Herein, InAs nanocrystals, post-synthetically doped with Cd, serve as a model system for successful p-type doping of originally n-type InAs nanocrystals, as demonstrated in field-effect transistors (FETs). Advanced structural analysis, using atomic resolution electron microscopy and synchrotron X-ray absorption fine structure spectroscopy reveal that Cd impurities reside near and on the nanocrystal surface acting as substitutional p-dopants replacing Indium. Commensurately, Cd-doped InAs FETs exhibited remarkable stability of their hole conduction, mobility, and hysteretic behavior over time when exposed to air, while intrinsic InAs NCs FETs were easily oxidized and their performance quickly declined. Therefore, Cd plays a dual role acting as a p-type dopant, and also protects the nanocrystals from oxidation, as evidenced directly by Xray photoelectron spectroscopy measurements of air-exposed samples of intrinsic and Cd doped InAs NCs films. This study demonstrates robust p-type doping of InAs nanocrystals, setting the stage for implementation of such doped nanocrystal systems in printed electronic devices., Comment: Paper - 34 pages, 7 figures SI - 17 pages, 9 figures

Control of surface functionalization of MXenes holds great potential, and in particular, may lead to tuning of magnetic and electronic order in the recently reported magnetic Cr2TiC2Tx. Here, vacuum annealing experiments of Cr2TiC2Tx are reported with in situ electron energy loss spectroscopy and novel in situ Cr K-edge extended energy loss fine structure analysis, which directly tracks the evolution of the MXene surface coordination environment. These in situ probes are accompanied by benchmarking synchrotron X-ray absorption fine structure measurements and density functional theory calculations. With the etching method used here, the MXene has an initial termination chemistry of Cr2TiC2O1.3F0.8. Annealing to 600 C results in the complete loss of -F, but -O termination is thermally stable up to (at least) 700 C. These findings demonstrate thermal control of -F termination in Cr2TiC2Tx and offer a first step towards termination engineering this MXene for magnetic applications. Moreover, this work demonstrates high energy electron spectroscopy as a powerful approach for surface characterization in 2D materials.

Fine structure analysis of core electron excitation spectra is a cornerstone characterization technique across the physical sciences. Spectra are most commonly measured with synchrotron radiation and X-ray spot sizes on the {\mu}m to mm scale. Alternatively, electron energy loss spectroscopy (EELS) in the (scanning) transmission electron microscope ((S)TEM) offers over a 1000 fold increase in spatial resolution, a transformative advantage for studies of nanostructured materials. However, EELS applicability is generally limited to excitations below ~2 keV, i.e., mostly to elements in just the first three rows of the periodic table. Here, using state-of-the-art EELS instrumentation, we present nm resolved fine structure EELS measurements out to an unprecedented 12 keV with signal-to-noise ratio rivaling that of a synchrotron. We showcase the advantages of this technique in exemplary experiments.