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Nanowire (NW)-based field-effect transistors (FETs) are an important constituent element in future nano-integrated circuits, which are also competitive for multifunctional-type device applications. However, suffering from a disordered fiber distribution system and the influence of deficiencies in regular oxide channel materials, the electrical properties of NWs-based transistors could not be unleashed and balanced. In this study, aligned Hf-doped InZnO (a-IHZO) NWs were prepared by electrospinning technology and assembled into FETs. Taking advantage of the strong oxygen binding capacity of Hf and the modulation of charge density, the a-IHZO/SiO2 FETs with an appropriate NW density achieved a high saturation mobility ( $\mu _{\text {SAT}}{)}$ of 26.8 cm2/ $\text{V}\cdot \text{s}$ and high stability while maintaining the balance of all electrical parameters. By utilizing the Al2O3 dielectric layer, the FET’s $\mu _{\text {SAT}}$ is significantly improved by $2\times $ and high gain has been achieved in a low-voltage-driving logic device. These indicate that the a-IHZO architecture may be useful for the future development of low-dimensional, high-performance, application-oriented integrated electronics.

Low-power biodegradable artificial synaptic devices are one of the important directions for future neuromorphic computing development, and synaptic transistors based on polymer materials open a new path to green electronics. Polyvinyl alcohol (PVA), as a polymer material with electrical double layer effect, is a potential dielectric in artificial synaptic transistors. However, the low ionic conductivity of PVA is a block for its application. Here, we raised the augmentation of the capacitance of PVA through ion doping. Based on ion-doped PVA dielectric, synaptic transistor shows excellent performance, including low subthreshold swing (SS) of 0.13 V/decade and high ${I}_{\text {on}}$ / ${I}_{\text {off}}$ of $3.5\times 10^{{6}}$ . Based on this transistor, a resistor-loaded inverter is constructed, which has full swing characteristics and high voltage gain. In addition, activity dependent synaptic responses, such as excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and high-pass filtering, are vividly imitated in a single synaptic device. Furthermore, fabricated device can be dissolved in water easily. The proposed synaptic transistor is a candidate in future “green” low-power devices.

This study investigates the effect of oxygen plasma treatment on the surface morphology, electrical properties, and stability of amorphous graphene quantum dots (GQDs)-modulated InGaZnO (IGZO) thin-film transistors (TFTs) prepared by all-solution method. The weak threshold voltage shifts ( $\Delta {V}_{\text {TH}}\text {)}$ of the oxygen plasma-treated GQDs-IGZO TFTs under positive bias stress (PBS), negative bias stress (NBS), positive bias illumination stress (PBIS), and negative bias illumination stress (NBIS) show a significant improvement of the bias-induced instability. Based on the energy band diagrams, this work demonstrates that O $_{{2}}^{-}$ and H2O+ are formed in the back channel under PBS and NBS conditions in addition to ionized oxygen vacancy (V $_{\text {o}}\text {)}$ defects at the GQDs–IGZO/ZrOx interface, leading to the gate bias instability, which can be effectively suppressed by the oxygen plasma treatment to improve the stability of the device. From the experimental results, it can be seen that the electrical properties, such as field effect mobility ( $\mu _{\text {FE}}\text {)}$ , on-/off-current ratio ( ${I}_{\text {on}}$ / ${I}_{\text {off}}\text {)}$ , and subthreshold fluctuations, are significantly improved by the passivation of interfacial trap density and bulk trap defects by oxygen plasma treatment. To confirm the potential applications of IGZO-TFTs in logic circuits, inverter based on GQDs-IGZO/ZrOx has been integrated, demonstrating good dynamic response characteristics and narrow transition width. Low-frequency noise (LFN) analyses of TFTs have revealed that mobility fluctuations are the main source of noise. As a result, it can be concluded that the facile oxygen plasma treatment strategy is a promising technique to optimize device performance and has demonstrated potential applications in preparing GQDs-IGZO TFTs with high performance.

Based on atomic layer deposition (ALD) technology and 2-D material Ti3C2Tx MXene intercalation strategy, the low-temperature fabrication of low-voltage-driven high-performance In2O3 thin-film transistor (TFT) has been realized. Ti3C2Tx MXene intercalation is introduced between Al2O3 dielectric layer and In2O3 channel layer to construct the In2O3/MXene/Al2O3 TFT. The connectivity of MXene nanosheet is adjusted by changing the concentration of MXene, and the electrical properties of TFTs are optimized. The results demonstrate that In2O3/MXene/Al2O3 TFT presents the best performance with the mobility of 15.41 cm2/ $\text{V}\cdot \text{s}$ and significant bias stress stability when the concentration of MXene is 2 mg/mL. The resistance load inverter based on In2O3/MXene/Al2O3 TFT exhibits a gain of up to 11.6 at 5 V and good voltage transmission characteristics, which conforms to the operation rules of logic “not gate.” Low-frequency noise (LFN) assists mechanism analysis of MXene intercalation to improve TFT performance. The experimental results show that MXene intercalation structure can effectively improve the performance and operational stability of In2O3-based TFTs, providing a reliable experimental path and solution for device performance optimization.