203 results on '"Fujito, Kenji"'
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2. Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer
3. Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes
4. Status and perspectives of the ammonothermal growth of GaN substrates
5. Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
6. Seeded growth of GaN by the basic ammonothermal method
7. Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia
8. Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere (Conference Presentation)
9. Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals
10. Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam
11. Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere
12. Spectroscopic ellipsometry studies on the m-plane Al1− xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate
13. Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
14. High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds
15. Low-resistivitym-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method
16. Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence
17. High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
18. Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas inm-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
19. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
20. Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
21. Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
22. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
23. Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
24. Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes
25. Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
26. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
27. 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
28. 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
29. Semipolar ( 2 0 2 ¯ 1 ¯ ) Blue and Green InGaN Light-Emitting Diodes
30. Semipolar (20 21 ¯) Laser Diodes (λ=505nm) with Wavelength-Stable InGaN/GaN Quantum Wells
31. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
32. Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)]
33. Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
34. AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
35. Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
36. High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
37. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
38. Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes
39. Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates
40. Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes
41. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
42. 30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
43. High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
44. InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates
45. Propagation of Spontaneous Emission in Birefringentm-Axis Oriented Semipolar (11\bar22) (Al,In,Ga)N Waveguide Structures
46. AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
47. Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
48. m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
49. m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
50. Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate
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