433 results on '"Fujiwara, Kozo"'
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2. Misorientation increase of small-angle grain boundaries during directional solidification of silicon
3. Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon
4. Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification
5. In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon
6. Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon
7. Facet formation during the solidification of pure antimony
8. In situ observation of solidification and subsequent evolution of Ni-Si eutectics
9. Twin boundary formation at a grain-boundary groove during the directional solidification of InSb
10. Dynamics at crystal/melt interface during solidification of multicrystalline silicon
11. Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate
12. Multi-layer kagome lattices assembled with isotropic spherical colloids via heteroepitaxial growth
13. Effect of twin boundary formation on the growth rate of the GaSb{111} plane
14. In situ observation of the solidification interface and grain boundary development of two silicon seeds with simultaneous measurement of temperature profile and undercooling
15. Growth of Multicrystalline Silicon for Solar Cells: Dendritic Cast Method
16. Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon
17. The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si
18. Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon
19. Crystallization and re-melting of Si1-xGex alloy semiconductor during rapid cooling
20. The in situ observation of faceted dendrite growth during the directional solidification of GaSb
21. A {112}Σ3 grain boundary generated from the decomposition of a Σ9 grain boundary in multicrystalline silicon during directional solidification
22. Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon
23. Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots
24. In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon
25. In situ observation of interaction between grain boundaries during directional solidification of Si
26. In situ observation of grain boundary groove at the crystal/melt interface in Cu
27. In-situ studies of multicrystalline silicon nucleation and growth on α- and β-Si3N4 coated substrates
28. In situ study of growth kinetics of {100} and {110} crystal/melt interfaces during unidirectional solidification of silicon
29. In situ observation of twin boundary formation at grain-boundary groove during directional solidification of Si
30. Liquid immiscibility in a CTGS (Ca3TaGa3Si2O14) melt
31. Effect of grain boundary grooves at the crystal/melt interface on impurity accumulation during the unidirectional growth of multicrystalline silicon
32. Orientation-dependent impurity partitioning of colloidal crystals
33. Growth of Multicrystalline Silicon for Solar Cells: Dendritic Cast Method
34. Visualizing crystal twin boundaries of bismuth by high-spatial-resolution ARPES
35. Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth
36. The solid-solution region for the langasite-type Ca3TaGa3Si2O14 crystal as determined by a lever rule
37. Impact of Solid–Liquid Interface Shape on Eutectic Structure with Faceted/Non-Faceted Intermetallic Compounds in Fe–Si System
38. Partitioning of ionic species during growth of impurity-doped lithium niobate by electric current injection
39. Fundamental Understanding of Subgrain Boundaries
40. Mechanism of Dendrite Crystal Growth
41. Growth of congruent-melting lithium tantalate crystal with stoichiometric structure by MgO doping
42. Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals
43. The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon
44. Growth of Multicrystalline Silicon for Solar Cells: Dendritic Cast Method
45. Heteroepitaxial Growth of Colloidal Crystals: Dependence of the Growth Mode on the Interparticle Interactions and Lattice Spacing
46. Formation mechanism of twin boundaries during crystal growth of silicon
47. The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
48. Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles
49. Effect of Na–Sn Flux on the Growth of Type I Na8Si46 Clathrate Crystals
50. Ga segregation during Czochralski-Si crystal growth with Ge codoping
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