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We studied the luminescence of CdTe layers with a nominal thickness of one, two, four, and eight monolayers (MLs) grown by atomic layer deposition in a ZnTe matrix. The layers with a thickness of one and two monolayers exhibit the properties of homogeneous layers, while the layers with a thickness of four and eight monolayers are planar arrays of quantum dots (QDs). The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of the CdTe layer. The shape of the luminescence excitation spectra of the CdTe layer in these samples varies greatly. Depending on the energy distance between the exciton levels of the CdTe layers and the ZnTe matrix, the ratio of the contributions of the ZnTe exciton and charge carriers unbound to the exciton to the energy transfer varies significantly.

Infrared reflection spectra of thin (∼60 nm) Pb1−x Sn x Te (x = 0.25, 0.53, 0.59) films grown by molecular beam epitaxy on GaAs/CdTe hybrid substrates have been measured at frequencies from 20 to 5500 cm−1 and temperatures from 5 to 300 K. The spectra have been used to determine temperature-dependent transverse phonon and plasmon frequencies in the films, which has made it possible to identify a structural phase transition at T C ≈ 50 K. The plasma frequency of the films has been shown to increase with decreasing band gap on cooling from 300 to 77 K. The increase in plasma frequency is mainly attributable to the increase in carrier concentration and a transition of the carriers from vortex states on the film surface to the valence band.

A trion magnetic polaron formed by the exchange interaction of a positively charged exciton (trion) with localized spins of Mn$^{2+}$ ions is found experimentally in a 4\,nm wide Cd$_{0.98}$Mn$_{0.02}$Te/Cd$_{0.78}$Mn$_{0.02}$Mg$_{0.2}$Te quantum well containing resident holes. The experiment is performed at a temperature of 1.6 K using resonant excitation of the trion with circularly polarized light. The trion is formed from a resident hole, which is in a hole magnetic polaron state, and a photogenerated electron-hole pair. The dynamical evolution from the hole magnetic polaron to the trion magnetic polaron is accompanied by a spin-flip of the electron, which results in negative circular polarization of the photoluminescence. The degree of circular polarization reaches $-8\%$ at zero magnetic field and strongly decreases in transverse magnetic fields exceeding 0.2 T. Our model considerations show that different localization sizes of the resident and photogenerated holes and the resulting difference in their exchange interaction with the Mn$^{2+}$ spins maintains Mn spin polarization. The resulting exchange field of Mn acting on the electron provides a robust spin polarization of the trion magnetic polaron. We evaluate the electron exchange energy in the T$^+$MP to be 0.19~meV, and the T$^+$MP binding energy to be about 0.5 - 1 meV.

Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually gapped. However, the phase coherence effects in 10 nm and 20 nm SnTe/PbTe samples are fully explained assuming existence of gapless Dirac cones. Magnetotransport at higher magnetic fields is described in the framework of mobility spectrum analysis (MSA). We demonstrate that the electron- and hole-like peaks observed simultaneously for all SnTe/PbTe heterojunctions may originate from the concave and convex parts of the energy isosurface for topological states -- and not from the existence of quasiparticles both carrying negative and positive charges. This interpretation is supported by numerical calculations of conductivity tensor components for gapless (100) Dirac cones, performed within a classical model and based on the solutions of Boltzmann transport equation. Our approach shows the feasibility of MSA in application to magnetotransport measurements on topological matter.

The reflection and luminescence spectra of a CdTe/CdMgTe heterostructures doped with iodine are studied. Iodine was introduced either into a barrier layer or into a wide CdTe quantum well. It is shown how the doping method and level affect the spectra and the temperature dependence of the quantum well exciton emission intensity.

In tunnel-coupled quantum wells of different widths, it was found that the spin dynamics arising from resonant pulsed optical pumping of an exciton in the narrow well includes the dynamics of electron spin polarization in the wide well, although the electron level in the wide well is 55 meV lower than the electron level in the narrow well. An analysis of the obtained results showed that the observed effect is caused by the exchange interaction of spin-polarized electrons in the wide well with exciton states in the narrow well.

Reflectance spectra of thin Pb1 –xSnxTe films (~60 nm) with x = 0.25, 0.53, and 0.59, grown by MBE on hybrid GaAs/CdTe substrates, are measured in the frequency range of 20–5500 cm–1 and the temperature range of 5–300 K. The temperature dependence of transverse optical phonon frequencies and structural phase transition temperatures are determined based on a dispersion analysis. An increase in the plasma frequency with decreasing temperature in the range 300‒77 K in all films is detected.

The photoluminescence and excitation of luminescence spectra of a series of samples containing two CdTe layers D1 and D2 with a nominal thickness of 1.5 and 4 monolayers in a ZnTe matrix were studied. The samples differ in the width of the ZnTe spacer separating the D1 and D2 inserts and constituting 15, 25, 35, 45 and 55 monolayers (samples nos. 1–5, respectively). ZnTe layers are grown on a GaAs substrate by the standard molecular beam epitaxy mode, while CdTe inserts are grown in atomic layer epitaxy mode. It is shown that when the barrier thickness is less than 25 monolayers electronic states in the quantum wells formed by D1 and D2 layers are tunnel-coupled, and only one band is recorded in the emission spectrum, caused by the recombination of excitons in the deep quantum well. At larger thicknesses of the spacer, two bands I1 and I2 are observed in the luminescence spectrum, which are associated with the recombination of excitons in shallow (D1) and deep (D2) wells, respectively. It was found that the intensity ratio I1/I2 significantly depends on the energy and intensity of the excitation. Possible origin of these dependences are discussed.

Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices with low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here, we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The electric field controls the phononic ac Stark effect—the indirect exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1V bias across the heterostructure., Manipulating magnetic orders by electric fields promises energy efficient spintronic applications. Here the authors demonstrate electrical control of s-p exchange interaction in a ferromagnet-semiconductor quantum well structure due to the phononic ac Stark effect.

The exciton luminescence spectra of CdTe/ZnTe heterostructures containing two thin CdTe layers separated by barriers of different thickness were studied. The complex temperature dependence of the intensity of luminescence from these layers in its underbarrier and abovebarrier excitation led to the conclusions about the effect of the thickness of the barriers on the energy transfer between the CdTe layers and gave the possibility to observe, at specific temperatures, the implementation of a resonant-type excitation. The dependence of the shape of the exciton emission contours on the excitation level gives information about the real structure of CdTe layers with the monolayer thickness of 1.5 and 4.0 monolayers.

Molecular beam epitaxy was applied to evaporate a set of Au/ZnTe:I/CdTe:I/GaAs/In heterostructures. The resulted heterostructures were examined for photovoltaic energy conversion application. Electrical characteristics were studied for understanding the relevant electrical transport mechanisms. The current–voltage (I–V) characteristics were checked under dark and light conditions. Ideality factor indicates the recombination mechanisms in the designed device; its value equals (3.22). Under various light intensities (1–140 mW cm−2), the I–V curves are affected highly by reverse voltage bias. The open-circuit voltage increases exponentially with the illumination and its values of this device increased with increasing light intensity (L), where 55 mV at 1 mW cm−2 and 465 mV at 140 mW cm−2. Electrical as well as power related parameters of the designed device were interpreted. Photosensitivity and Responsitivity of the studied device showed a high photoresponse under different light intensities. Au/ZnTe:I/CdTe:I/GaAs/In heterostructures is a promising material for photosensor and optoelectronic applications.

Photoluminescence and multiple ${\mathrm{Mn}}^{2+}$ spin-flip Raman scattering (SFRS) are studied in the (Cd,Mn)Te/(Cd,Mg)Te quantum well with excess resident hole concentration under resonance continuous-wave photoexcitation in the localized states of excitons and trions at $T=1.5$ K. A magnetic polaron shift of both exciton and trion photoluminescence is observed to be increasing with an increase in the magnetic field up to 6 T applied perpendicularly to the sample growth axis (Voigt geometry). Exciton magnetic polaron shift in magnetic field is attributed to the adiabatic energy transfer from the exchange reservoir to the Zeeman reservoir during the precession of the ${\mathrm{Mn}}^{2+}$ ions in the summary field of external magnetic and exchange hole fields. A mechanism of the magnetic polaron shift of trion photoluminescence is suggested. It is related to direct photoexcitation of the triplet trion state, which is stable in the conditions which are provided by the resident hole magnetic polarons. In these conditions, the ${\mathrm{Mn}}^{2+}$ magnetic moment experiences additional magnetization in the double exchange field provided by two holes in the triplet trion state. It is observed that the maximum efficiency of multiple ${\mathrm{Mn}}^{2+}$ spin-flip Raman scattering falls into the energy range corresponding to the states of localized excitons where the exciton magnetic polaron shift is observed. From this we conclude that the magnetic polaron state could be an intermediate state of the multiple ${\mathrm{Mn}}^{2+}$ SFRS process.

ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface. This conclusion is confirmed by the observation of a significant blue-shift of the emission energy with an increasing excitation fluence induced by the electron-hole separation at the interface. Cathodoluminescence measurements reveal that the optical emission in the near infrared originates from nanowires and not from two dimensional residual deposits between them. Moreover, it is demonstrated that the emission energy in the near infrared depends on the average CdSe shell thickness and the average Mg concentration within the (Zn,Mg)Te shell. The main mechanism responsible for these changes is associated with the strain induced by the (Zn,Mg)Te shell in the entire core/shell nanowire heterostructure., Comment: 7 pages

We study the crystal structure-mismatched, quantum dot-like (QD) composite metamaterial based on rock-salt narrow gap PbTe and zinc-blende wide gap CdTe. In the case of PbTe/CdTe QDs the quantum effects are observed for dots with dimensions of the order of 100 nm even at room temperature making this material system a promising candidate for mid-infrared applications. Using molecular beam epitaxy technique and utilizing difference in crystal structure of both semiconductors a variety of samples containing PbTe nanostructures with complicated morphology embedded in CdTe were obtained. Investigated nanocomposite PbTe/CdTe samples exhibit unusually strong and surprisingly narrow (about 5 meV) mid-infrared photoluminescence emission (250 meV) in contrast to the spectrally wide luminescence of a typical ensemble of PbTe/CdTe quantum dots measured in similar temperature (about 100 K) and excitation power conditions (400 microW). For excitation power exceeding 500 microW additional emission in energy about 15 meV lower than previous one appears, which dominates PL spectrum for excitation higher than 800 microW. This line, not reported for such kind of QDs yet, exhibit non-linear dependence of amplitude on excitation power. We discuss the observed behavior of photoluminescence considering presence of two-dimensional electron gas with high electron mobility and carrier density up to 10^19 cm-3 spontaneously formed close to the polar CdTe/PbTe interfaces. As estimated plasmon energy in our samples (240 meV) matches well the energy of observed emission, non-resonant coupling of photons with interface plasmons mediated by LO phonon is most possible explanation of unusual enhancement of PL from studied PbTe/CdTe metamaterial.

The effective $g$ factor of holes is measured in modulation-doped ZnSe/(Zn,Mg)(S,Se) quantum wells and from surface-state $p$-doped CdTe/(Cd,Mg)Te quantum wells by time-resolved pump-probe Kerr rotation. The measurements are performed at a temperature of 1.7 K and in magnetic fields up to 5 T applied in the Voigt geometry with orientation perpendicular to the quantum-well growth axis. The absolute value of the in-plane hole $g$ factor increases with growing magnetic field in both studied heterostructures. A theoretical model is developed that considers the influence of magnetic field and interface mixing of heavy-hole and light-hole states on the $g$ factor. The model results are in good agreement with the experimental data.

The photoluminescence (PL) and PL excitation (PLE) spectra of CdTe/ZnTe asymmetric double quantum well (QW) structures are studied on a series of samples containing two CdTe layers with nominal thicknesses of 2 and 4 monolayers (ML) in the ZnTe matrix. The samples differ in the thickness of the ZnTe spacer between CdTe QWs which is 45, 65 and 75 ML. It has been found that at above-barrier excitation the PL from a shallow QW at sufficiently weak excitation intensities is determined by recombination of hot excitons. It is shown that under these conditions, when PL is excited by lasers with different wavelengths, the ratio of the PL intensities from shallow and deep QWs decreases exponentially with an increase of the initial kinetic energy of hot excitons. It is found that energy relaxation of hot excitons with LO phonon emission determine the shape of the PLE spectrum of shallow QW in the range of exciton kinetic energies up to more than 20 LO phonons above ZnTe bandgap. We have shown that the results obtained are well described by the model of charge and energy transfer between QWs.

We study the magnetic-field dependence of the longitudinal spin relaxation time ${T}_{1}$ of donor-bound electrons placed in the middle of an 8-nm CdTe quantum well with different doping concentrations in the range from $1\ifmmode\times\else\texttimes\fi{}{10}^{9}$ to $2.9\ifmmode\times\else\texttimes\fi{}{10}^{11}$ $\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$ and at low temperature. We use an extended photoinduced Faraday rotation technique, which expands the usual domain of the measured decays from tens of ns to $\ensuremath{\mu}\mathrm{s}$. As in high-purity bulk semiconductors, a maximum relaxation time of around ${T}_{1}\ensuremath{\sim}10\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{s}$ is observed for a residually doped sample at low magnetic field of $B=0.08\phantom{\rule{0.16em}{0ex}}\mathrm{T}$. For higher doping concentrations, the magnetic-field dependence of ${T}_{1}$ shows a nonmonotonic behavior: first a rapid increase, followed by a plateau or a decrease of ${T}_{1}$. The fast increase of ${T}_{1}$ at low magnetic fields is explained by the inhibition of the mechanisms identified at zero field---hyperfine and anisotropic exchange interactions---while the behavior at high magnetic field can be succesfully explained by a mechanism proposed by Lyubinskiy and associated to electron hops [I. S. Lyubinskiy, JETP Lett. 88, 814 (2008)]. A good agreement between experiment and theory is found for samples below the metal-insulator transition, when Dresselhaus terms of spin-orbit coupling are considered to be the dominant ones in the Hamiltonian describing the system.

The effective electron $g$ factor, ${g}_{\text{eff}}$, is measured in a two-dimensional electron gas (2DEG) in modulation-doped ZnSe- and CdTe-based quantum wells by means of time-resolved pump-probe Kerr rotation. The measurements are performed in magnetic fields applied in the Voigt geometry, i.e., normal to the optical axis parallel to the quantum well plane, in the field range $0.05--6$ T at temperatures $1.8--50\phantom{\rule{0.28em}{0ex}}\mathrm{K}$. The ${g}_{\text{eff}}$ absolute value considerably increases with increasing electron density ${n}_{e}$. ${g}_{\text{eff}}$ changes in the ZnSe-based QWs from $+1.1$ to $+1.9$ in the ${n}_{e}$ range $3\ifmmode\times\else\texttimes\fi{}{10}^{10}\ensuremath{-}1.4\ifmmode\times\else\texttimes\fi{}{10}^{12}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ and in the CdTe-based QWs from $\ensuremath{-}1.55$ down to $\ensuremath{-}1.76$ in the ${n}_{e}$ range $5\ifmmode\times\else\texttimes\fi{}{10}^{9}\ensuremath{-}3\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. The modification of ${g}_{\text{eff}}$ reduces with increasing magnetic field, increasing temperature of lattice and 2DEG, the latter achieved by a higher photoexcitation density. A theoretical model is developed that considers the renormalization of the spin-orbit coupling constant of the two-dimensional electrons by the electron-electron interaction and takes into account corrections to the electron-electron interaction in the Hubbard form. The model results are in good agreement with experimental data.

Optical control of electronic spins is the basis for ultrafast spintronics: circularly polarized light in combination with spin-orbit coupling of the electronic states allows for spin manipulation in condensed matter. However, the conventional approach is limited to spin orientation along one particular orientation that is dictated by the direction of photon propagation. Plasmonics opens new capabilities, allowing one to tailor the light polarization at the nanoscale. Here, we demonstrate ultrafast optical excitation of electron spin on femtosecond time scales via plasmon to exciton spin conversion. By time-resolving the THz spin dynamics in a hybrid (Cd,Mn)Te quantum well structure covered with a metallic grating, we unambiguously determine the orientation of the photoexcited electron spins which is locked to the propagation direction of surface plasmon-polaritons. Using the spin of the incident photons as additional degree of freedom, one can orient the photoexcited electron spin at will in a two-dimensional plane., main text 23 pages, 5 figures. Supplementing material with 6 figures

Heterostructures of the CdTe/ZnTe type with ultrathin quantum wells are studied. Lines of light and heavy excitons bound to the CdTe layers are observed in the spectra. It is found that the photoluminescence intensity of the light exciton is comparable to the luminescence intensity of the heavy exciton. The temperature shifts of these lines are different, and the lines are intersected at a temperature of 65 K. The estimates of the energy and wave functions of the exciton states have made it possible to clarify parameters of some bands and excitons in such structures.

We report the observation of tens of minor lines of the combinational spin-flip Raman scattering in a CdTe:Mn quantum well by means of the high-resolution optical spectroscopy. Classification of this manifold leads to four characteristic values of energy, that correspond to four different types of pair clusters of Mn ions: the nearest, second, third, etc., neighbors. All the four energies show up in a single experiment with a very high precision, providing experimental grounds for a deeper understanding of the $d\ensuremath{-}d$ exchange interactions in a diluted magnetic semiconductor and demonstrating the capacity of the employed method. The major (nearest-neighbor) exchange constant ${J}_{1}=6.15\ifmmode\pm\else\textpm\fi{}0.05$ K was found to consent with its previously reported value. Other detected characteristic energies are as follows ($\ifmmode\pm\else\textpm\fi{}0.05$ K): ${J}_{(2)}=1.80$ K, ${J}_{(3)}=1.39$ K, ${J}_{(4)}=0.81$ K.

We use the two-pulse spin-dependent photon echo technique to study the in-plane hole spin anisotropy in a 20~nm-thick CdTe/Cd$_{0.76}$Mg$_{0.24}$Te single quantum well by exciting the donor-bound exciton resonance. We take advantage of the photon echo sensitivity to the relative phase of the electron and hole spin precession and study various interactions contributing to the hole in-plane spin properties. The main contribution is found to arise from the crystal cubic symmetry described by the Luttinger parameter $q=0.095$, which is substantially larger than the one theoretically expected for CdTe or found in other quantum well structures. Another contribution is induced by the strain within the quantum well. These two contributions manifest as different harmonics of the spin precession frequencies in the photon echo experiment, when strength and orientation of the Voigt magnetic field are varied. The magnitude of the effective in-plane hole $g$ factor is found to vary in the range $|\tilde{g_h}|$=0.125--0.160 in the well plane., 7 figures

Infrared spectra of reflection and attenuated total reflection of PbTe thin films deposited by molecular beam epitaxy on a GaAs/CdTe substrate have been measured. The high-frequency dielectric constant, frequencies and oscillator strengths of transverse optical phonons, plasma frequencies, and plasma collision frequencies have been determined for all layers using the dispersion analysis. Attenuated total reflection spectra obtained with silicon and diamond prisms demonstrate surface phonon and plasmon–phonon polaritons. The dispersion curves of surface polaritons have been obtained.

Magneto-optical phenomena such as the Faraday and Kerr effects play a central role in controlling the polarization and intensity of optical fields propagating through a medium. Intensity effects in which the direction of light emission depends on the orientation of the external magnetic field are of particular interest, as they can be harnessed for routing light. Effects known so far for accomplishing such routing all control light emission along the axis parallel to the magnetic field. Here we report a new class of emission phenomena where directionality is established perpendicular to the externally applied magnetic field for light sources located in the vicinity of a surface. As a proof of principle for this effect, which we call transverse magnetic routing of light emission, we demonstrate the routing of emission for excitons in a diluted-magnetic-semiconductor quantum well. In hybrid plasmonic semiconductor structures, we observe significantly enhanced directionality of up to 60%.

The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.

Light emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn0.45Mn0.15Te were investigated under the different excitation conditions. The heavy-hole exciton σ+ and σ– magnetic components show the unusual behavior concerning their energy shifts and intensities. It is possible to explain the Zeeman splitting of the heavy exciton emission band if the following factors are taken into account. Firstly, ZnMnTe/ZnMgTe quantum well structures are of the type II due to the strains as concerns to the electron and heavy hole. Secondly, the electron and hole magnetic sublevels population is far from equilibrium due to the fast energy transfer from the electron- hole system to the 3d-shells of magnetic ions.

The optical properties of the Cd0.4Mn0.4Te/Cd0.5Mg0.5Te heterostructure with quantum wells of 7 monolayers in thickness are studied. The temperature dependences of the integral intensity of luminescence of the barrier layer and quantum well and intracenter luminescence of manganese ions are determined, and the luminescence excitation spectra are measured. Numerous components corresponding to LO phonons of the CdTe, MgTe, and MnTe types are observed in the Raman scattering spectra.

The photoluminescence (PL) spectra of CdTe/ZnTe double quantum wells (QWs) are studied on a series of samples containing two CdTe layers with nominal thicknesses of 2 and 4 monolayers (ML) in the ZnTe matrix. The QWs were grown in atomic-layer epitaxy and separated by ZnTe spacers with the thicknesses dsp =40−160 ML. The dependences of the relative intensity of shallow QW1 and deep QW2 PL bands (I1 and I2 , respectively) on the pump intensity (J) when excited by the lasers with different radiation wavelengths are investigated. It is found that in the sample with dsp=40 ML, the ratio Y(J)=I1/I2 depends on J and the shape of the Y(J) dependency changes with the excitation wavelength. In the samples with dsp > 70 ML Y(J) also changes with the excitation intensity J, but the shape of this dependence is the same for various excitation wavelengths. It is concluded that the energy relaxation in these samples is influenced not only by the tunneling of charge carriers from QW1 to QW2, but also by carrier relaxation at the nonradiative centers, for which the recombination rate is different for shallow and deep QWs.

The reflectance spectra of the topological insulator Pb1–xSn x Se (x = 0.2, 0.34) films grown by molecular-beam epitaxy on a ZnTe/GaAs substrate are measured in the range of 12–2500 cm–1 at room temperature. Using dispersion analysis, the frequencies of transverse optical phonons, plasma frequencies, highfrequency permittivities, and layer thicknesses are determined. In the quasi-steady-state approximation, the interface mode frequencies of the four-layer structure are calculated as a function of the overlap parameter χ1 (0 ≤ χ1 ≤ 1). The parameter describes the degree of overlap of two interface modes localized at planes bounding the layer to the right and left. The existence of interacting interface modes in the structure makes its spectrum different from the sum of component spectra. These differences manifest themselves in the experiment. The conditions of the interaction of interface modes with IR radiation are discussed.

A specialized heterojunction of p -ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for varicap and high response signal diode applications was epitaxially grown by using molecular beam epitaxy. Frequency dependence of the capacitance-voltage, conductance-voltage and series -resistance characteristics in the frequency spectrum from 10 kHz to 10 MHz at ambient temperature was investigated. An increase in the capacitance is observed especially at lower frequency range that can be attributed to the predominant effect of interface states. A negative capacitance is observed and is explained on the basis of the loss of interface charges or interface states localized between metal and semiconductor due to impact ionization process. The frequency and voltage dependencies of the series resistance were investigated and characteristic peaks were observed for the voltage dependence of series resistance under low-frequency range. Some important parameters such as barrier height, carrier concentration, cut off voltage were also estimated and discussed. The electrical characteristics of p -ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs show a good candidacy for electronic and optoelectronic devices.

In this work, heterojunctions of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photovoltaic and photodiode application were grown epitaxially by using molecular beam system. Current-voltage profile of the heterojunction device was studied in dark and under various illumination intensities. The obtained photocurrent is found to depend on the light intensity. The main heterojunction parameters, such as shunt and series resistances, the barrier height and the ideality factor were extracted from the current-voltage profile using diverse methods at ambient temperature. Values of the barrier height and the series resistance were obtained from Cheung's functions. A large value of the series resistance causes the non-ideal characteristics of current–voltage measurements. The study of the current-voltage characteristics of high voltage region suggests a predominant space charge limited mechanism. Moderate values of short circuit current and open circuit voltage were obtained through a light intensity of 140 mW/cm2, a current and voltages of 0.336 mA and 370 mV, respectively. The high photosensitivity and responsivity for the current under illumination condition suggests that the prepared heterojunction device could be employed as a photodiode sensor.

The coherent spin dynamics of electrons in tunnel-coupled CdTe and (Cd,Mn)Te quantum wells (QWs) is studied by time-resolved pump-probe Kerr rotation. The coupled QWs have different thicknesses; the narrow one is doped by ${\mathrm{Mn}}^{2+}$ magnetic ions. A short range proximity effect between them is observed: the Zeeman splitting of electrons in the wide QW is given in addition to the intrinsic electron $g$ factor by the exchange interaction with the ${\mathrm{Mn}}^{2+}$ ions mediated by electron tunneling into the narrow QW. The exchange interaction strength scales with the ${\mathrm{Cd}}_{0.88}{\mathrm{Mg}}_{0.12}\mathrm{Te}$ barrier thickness separating the QWs. The Kerr rotation signal measured on the wide QW shows two close frequencies of electron spin Larmor precession in a transverse magnetic field. These components have very different spin dephasing times, 50 ps and 1 ns. The two frequencies originate from electrons in the wide QW being either part of an exciton or being resident. The proximity effect of the exciton electron is smaller due to the binding by Coulomb interaction, which decreases the tunneling to the narrow well. The experimental data are in good agreement with model calculations.

We study the quantum beats in the polarization of the photon echo from donor-bound exciton ensembles in semiconductor quantum wells. To induce these quantum beats, a sequence composed of a circularly polarized and a linearly polarized picosecond laser pulse in combination with an external transverse magnetic field is used. This results in an oscillatory behavior of the photon echo amplitude, detected in the $\sigma^+$ and $\sigma^-$ circular polarizations, occurring with opposite phases relative to each other. The beating frequency is the sum of the Larmor frequencies of the resident electron and the heavy hole when the second pulse is polarized along the magnetic field. The beating frequency is, on the other hand, the difference of these Larmor frequencies when the second pulse is polarized orthogonal to the magnetic field. The measurement of both beating frequencies serves as a method to determine precisely the in-plane hole $g$ factor, including its sign. We apply this technique to observe the quantum beats in the polarization of the photon echo from the donor-bound excitons in a 20-nm-thick CdTe/Cd$_{0.76}$Mg$_{0.24}$Te quantum well. From these quantum beats we obtain the in-plane heavy hole $g$ factor $g_h=-0.143\pm0.005$., Comment: 4 pages, 4 figures

International audience; The behavior of the spin relaxation time of electrons bound to donors immersed in the middle of a CdTe quantum well was measured in the range of temperatures 10-80 K, by using picosecond pump-probe Kerr rotation. Different doping concentrations spanning from isolated donors up to a concentration beyond the metal-insulator transition were considered at a fixed magnetic field; at very low temperature, in insulating regime all electrons are bound to donors but for one high concentration we had to consider that a fraction of electrons is in conduction states. By increasing the temperature, the number of conduction electrons increases. The experimental temperature dependences were explained by invoking spin exchange between electron spins localized on donors and the spin of electrons promoted to conduction states. A good agreement between experiment and theory was found and allowed us to conclude that, while the spin of localized electrons undergoes the effect of both hyperfine and anisotropic exchange interactions, the D'yakonov-Perel' mechanism governs the spin relaxation of the conduction electrons for the whole range of the studied doping concentrations. Moreover, we identified the scattering mechanisms possibly undergone by the conduction electrons at low temperature.

Spin-dependent photon echoes in combination with pump-probe Kerr rotation are used to study the microscopic electron spin transport in a CdTe/(Cd,Mg)Te quantum well in the hopping regime. We demonstrate that independent of the particular spin relaxation mechanism, hopping of resident electrons leads to a shortening of the photon echo decay time, while the transverse spin relaxation time evaluated from pump-probe transients increases due to motional narrowing of spin dynamics in the fluctuating effective magnetic field of the lattice nuclei., 11 pages, 8 figures

Double CdTe/CdMgTe quantum wells modulation doped with Iodine were etched to fabricate grids with a period of $8 \mu \mathrm{m}$ and a geometrical aspect ratio ($\delta$) between 0.2 and 0.7. Etching removed only the well closer to the sample's surface. Transmission of terahertz radiation as a function of magnetic field (B) up to 10 T was measured at 2 K. The spectra show a single magnetoplasmon resonance (MPR) which position in B depends on $\delta$. A huge amplitude of MPR, comparable to that of the cyclotron resonance, allows us to propose such structures as tunable plasmonic terahertz detectors.

Low-temperature spin relaxation time of electrons localized on iodine donors placed in the middle of a 8-nm CdTe quantum well is studied by using the photoinduced Faraday rotation technique, for donor concentrations in the range from $1\ifmmode\times\else\texttimes\fi{}{10}^{9}\phantom{\rule{4pt}{0ex}}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$ to $3.6\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{4pt}{0ex}}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$. A maximum relaxation time of the order of 20 ns is found at a doping concentration near the metal-insulator transition. Adapting the theoretical description developed for bulk GaAs [R. I. Dzhioev et al., Phys. Rev. B 66, 245204 (2002)] to a quantum well, we have fitted the experimental results taking as a parameter the spin-orbit constant in CdTe. A satisfactory fit is obtained with ${\ensuremath{\alpha}}_{so}=0.079\ifmmode\pm\else\textpm\fi{}0.011,$ which is also very close to the calculated theoretical value. A comparison of the experimental spin relaxation times measured previously in bulk CdTe to those predicted by the theory is done. Finally, we compare the predicted spin relaxation times in bulk CdTe to those predicted in one of the most studied bulk semiconductor materials: GaAs, and in (less studied) ZnSe.