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This paper investigates experimentally and numerically the nonlinear dynamics of an epitaxial quantum dot laser on silicon subjected to optoelectronic feedback. Experimental results showcase a diverse range of dynamics, encompassing square wave patterns, quasi-chaotic states, and mixed waveforms exhibiting fast and slow oscillations. These measurements unequivocally demonstrate that quantum dot lasers on silicon readily and stably generate a more extensive repertoire of nonlinear dynamics compared to quantum well lasers. This pronounced sensitivity of quantum dot lasers to optoelectronic feedback represents a notable departure from their inherent insensitivity to optical feedback arising from reflections. Moreover, based on the Ikeda-like model, our simulations illustrate that the inherent characteristics of quantum dot lasers on silicon enable rapid and diverse dynamic transformations in response to optoelectronic feedback. The emergence of these exotic dynamics paves the way for further applications like integrated optical clocks, optical logic, and optical computing.

The generation of broadband squeezed states of light lies at the heart of high-speed continuous-variable quantum information. Traditionally, optical nonlinear interactions have been employed to produce quadrature-squeezed states. However, the harnessing of electrically pumped semiconductor lasers offers distinctive paradigms to achieve enhanced squeezing performance. We present evidence that quantum dot lasers enable the realization of broadband amplitude-squeezed states at room temperature across a wide frequency range, spanning from 3 GHz to 12 GHz. Our findings are corroborated by a comprehensive stochastic simulation in agreement with the experimental data., Comment: 5 pages, 3 figures

This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity.

The realization of high-frequency unipolar quantum optoelectronic devices enables the demonstration of high bitrate free space data transmission in the second atmospheric window. Data-bits are written onto the laser emission using a large bandwidth amplitude modulator that operates by shifting the absorption of an optical transition in and out of the laser frequency.

Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include parametric amplification, mode-locked pulses and frequency combs, and in the quantum optics regime, entangled-photon generation, squeezed-state production and optical transduction from the visible to infrared wavelengths. For quantum dot systems, the basic understanding of FWM is limited by the conventional investigation method, which concentrates on the FWM susceptibility measured with optical amplifiers. This paper addresses this weakness by performing laser experiments to account for all optical nonlinearities contributing to the FWM signal. Meanwhile, we gain valuable insight into the intricate interplay among optical nonlinearities. Using quantum dot lasers directly grown on silicon, we achieved FWM conversion efficiency sufficient to demonstrate self-mode-locking in a single-section laser diode, with sub-ps mode-locked pulse duration and kHz frequency-comb linewidth. A comparison with first-principles based multimode laser theory indicates measured FWM conversion efficiencies that are close to the theoretical limit. An advantage over earlier studies and crucial to confidence in the results are the quality and reproducibility of state-of-the-art quantum dot lasers. They make possible the detailed study of conversion efficiency over a broad parameter space, and the identification of the importance of p-doping. Systematic improvement based on our understanding of underlying physics will lead to transform limited performance and effective compensation of intrinsic and extrinsic effects, such as linewidth enhancement and background dispersion. The integration of FWM with lasing impacts numerous optoelectronic components used in telecom and datacom.

We numerically investigate the complex nonlinear dynamics for two independently coupled laser systems consisting of (i) mutually delay-coupled edge emitting diode lasers and (ii) injection-locked quantum nano-structures lasers. A comparative study in dependence on the dynamical role of alpha parameter, which determine the phase-amplitude coupling of the optical field, in both the cases is probed. The variation of alpha lead to conspicuous changes in the dynamics of both the systems, which are characterized and investigated as a function of optical injection strength for the fixed coupled-cavity delay time. Our analysis is based on the observation that the cross-correlation and bifurcation measures unveil the signature of enhancement of amplitude-death islands in which the coupled lasers mutually stay in stable phase-locked states. In addition, we provide a qualitative understanding of the physical mechanisms underlying the observed dynamical behavior and its dependence on alpha. The amplitude death and the existence of multiple amplitude death islands could be implemented for applications including diode lasers stabilization., Comment: 9 Pages. arXiv admin note: text overlap with arXiv:1111.2439 by other authors