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Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are highly promising for high-frequency and high-power applications due to their superior properties, such as a wide energy bandgap and high carrier density. The performance of GaN HEMTs is significantly influenced by the interfacial states of the AlGaN barrier, and gate annealing has emerged as a key process for reducing leakage currents and enhancing DC/RF characteristics. This research investigates the impact of gate annealing on AlGaN/GaN HEMTs, focusing on two main aspects: leakage current reduction and improvements in DC and RF efficiency. Through comprehensive electrical analysis, including DC and RF measurements, the effects of gate annealing were experimentally evaluated. The results show a significant reduction in gate leakage current and noticeable improvements in DC/RF performance for the devices that underwent gate annealing. The study confirms that the annealing process can effectively enhance device performance by modifying the material properties at the gate interface. [ABSTRACT FROM AUTHOR]

In the rapidly advancing field of 5G technology, efficient thermal management is essential for enhancing the performance and reliability of high-power-density integrated circuits (ICs). This paper introduces an innovative approach to cooling these critical components, significantly surpassing traditional methods. Our design optimizes heatsink and fan configurations through systematic experimentation, varying fin shapes, heatsink dimensions, and fan speeds. The results demonstrate that fan velocity is the most critical factor in reducing IC temperatures, as increased airflow dramatically lowers thermal output. Expanding the heatsink surface area further improves heat dissipation by enhancing airflow interaction, while a larger copper heatsink boosts thermal conduction, effectively reducing the final IC temperature. These optimizations streamline the cooling process, minimizing the need for more complex and expensive equipment. This research sets a new benchmark in thermal management, fostering the development of more efficient and reliable electronic systems in the era of advanced wireless communications. Our approach brings a new dimension to existing research by focusing on the optimization of heatsink and airflow designs specifically for ICs. While previous studies have explored broader thermal management strategies, our work addresses specific challenges in heat dissipation by refining geometric configurations and fan speed adjustments. These optimizations result in measurable improvements in both efficiency and scalability, particularly within the context of high-power 5G systems. [ABSTRACT FROM AUTHOR]

Summary: In this paper, an out‐of‐band suppression enhanced high‐efficiency millimeter‐wave (mm‐wave) gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) filtering power amplifier (FPA) is presented. A modified elliptic response bandpass filtering (BPF) output matching network (OMN) is used to achieve low loss and high out‐of‐band rejection. The circuit of the presented BPF OMN is given and its synthesized method is introduced. The simulated S‐parameters show that the OMN has a low‐loss in‐band response and a desired out‐of‐band rejection performance with two transmission zeros (TZs). To demonstrate this idea, a two‐stage 24–28‐GHz GaN MMIC PA is designed and implemented in a 0.15‐μm GaN‐on‐SiC process, with a mask area of 2.4 × 1.0 mm2. Experimental results show that the realized MMIC PA achieves a small signal gain of 18.8 dB from 24 to 28 GHz with ±1.2‐dB gain flatness and 40‐dB rejection at 19.43 and 33.8 GHz. The saturated power‐added efficiency (PAE) is higher than 29% from 24 to 28 GHz, with a peak PAE of 36.3% at 27 GHz. The output power is within the range of 33.8 to 35.6 dBm in the operating band. For a 100‐MHz five‐carrier LTE signal, the PA can achieve ACLR better than −40 dBc over the band with digital predistortion. [ABSTRACT FROM AUTHOR]

Using gallium nitride (GaN) transistors in motor drive systems presents challenges because of their high dv/dt characteristics. Compared with silicon (Si) transistors, GaN transistors cause a higher leakage current in the bearing. This phenomenon results in a bearing corrosion problem in the motor, consequently shortening its lifespan. In response to these challenges, an output filter placed between an inverter and the motor has been studied recently. This paper compares the leakage current in a permanent magnet synchronous motor (PMSM) drive system driven by a GaN inverter without and with a sine wave filter. By modeling the impedance of the leakage current path, this paper confirms the possibility of reducing leakage current with the application of the sine wave filter. Experimental results show that using the sine wave filter reduces the leakage current by 32.24% at full load. [ABSTRACT FROM AUTHOR]

The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance (ρc < 1 × 10−4 Ω·cm2) was achieved with samples treated with an (NH4)2S-isopropanol solution, whereas the highest resistivity (ρc = 3.3 × 10−4 Ω·cm2) and surface roughness (Ra = 16 nm) were observed in samples prepared by standard methods. Annealing the contact system in an N2 + O2 + H2O atmosphere caused degradation through species inter-diffusion and metal-metal solid solution formation, irrespective of the preparation method. Standard prepared substrates developed a thin GaN-Au intermediate layer at the interface after heat treatment. Enhanced adhesion and the absence of GaN decomposition were observed in samples additionally cleaned with the (NH4)2S-solvent solution. Complete oxidation of nickel to NiO was observed in samples that underwent additional sulfur solution treatment. The intensity of metal species mixing and nickel oxidation was influenced by the metal diffusion rate and was affected by the initial state of the GaN substrate obtained through different wet treatment methods. [ABSTRACT FROM AUTHOR]

Copyright of Journal of Beijing University of Technology is the property of Journal of Beijing University of Technology, Editorial Department and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The radio frequency (RF) degradation mechanism under high temperature is proposed in this paper. The saturated output power (P sat), power added efficiency (PAE) and gain of the HEMTs deteriorate significantly under high power dissipation operation conditions, which contribute to an elevation of the junction temperature (T j). The high T j causes a negative shift of the threshold voltage and a reduction of electron mobility, as well as enhancing the trapping effects of the devices. As a result, the P sat and PAE of the high-power HEMTs (P sat = 152 W) decreased by 0.76 dB and 8.3%, respectively, which is more severe compared to low-power HEMTs (P sat = 20 W), where P sat and PAE reduced by 0.16 dB and 3.1% when the operation temperature was increased from 25 °C to 150 °C. By increasing the gate-to-drain distance from 1.625 to 2.175 μ m, drain current stability and high temperature reverse bias reliability are improved. The results demonstrate that the trapping effect can be suppressed by decreasing the electric field under the gate; therefore, the RF output characteristics are boosted by 1.2 W, 1 dB and 2.6% for a device with gate width of 11.52 mm. [ABSTRACT FROM AUTHOR]

This paper presents a lumped scalable model for spiral inductors in a radio frequency (RF) gallium nitride (GaN) technology on silicon substrate. The model has been developed by exploiting electromagnetic (EM) simulations of geometrically scaled spiral inductors. To this aim, the technology substrate, i.e., the metal back-end-of-line along with dielectric and semiconductor layers of the adopted GaN process, has been validated by means of experimental data and then used to define the EM simulator set-up for the spiral inductors. The proposed model adopts a simple π-topology with only seven lumped components and predicts inductor performance in terms of inductance, quality factor (Q-factor) and self-resonance frequency (SRF) for a large range of geometrical parameters of the spiral (i.e., number of turns, metal width, inner diameter). [ABSTRACT FROM AUTHOR]

GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth. [ABSTRACT FROM AUTHOR]

The present article presents critical aspects of RF system development process and its sequential phases along with associated challenges. It also discusses importance of active and passive components thermal behavior and their impact in overall system performance. The study on performance deviation of these components with temperature change has been reported. Potential issues for gain variation and frequency selectivity have been analysed and suitable solutions are explored accordingly. Implementation of temperature stabilization method in designed RF product has been carried out during prototype development. Practical achieved results are noted down during testing and measurement to monitor effectiveness of thermal stabilization mentioned in it. Finally, wideband flat gain response has been achieved by implementation of thermal stabilization for active and passive components to avoid any performance degradation. [ABSTRACT FROM AUTHOR]

The authors reported the fabrication of a dual-junction (2J) GaN solar cell (SC) with hybrid tunnel junction (TJ) layers. Compared with the single-junction (1J) SCs, it was found from the XRD spectra that the crystal quality of the SC with TJ was almost identical. However, the efficiencies of bottom 1J SC, top 1J SC, and 2J SC increase from 1.18 to 1.07, 1.12 to 1.20, and 1.59 to 1.73, respectively, when the concentrated suns increased from 1 to 100 suns. It was found that the use of hybrid TJ layers could result in a higher conversion efficiency in 2J SC and was essential in SCs for serially connecting multiple active junctions. [ABSTRACT FROM AUTHOR]

An improved small‐signal model applied to GaN‐based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut‐off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S‐parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz. [ABSTRACT FROM AUTHOR]

A novel frequency domain behavioral modeling method for gallium‐nitride (GaN) devices is presented in this article. By utilizing a multi‐dimensional polynomial function, the proposed technique interpolates DC‐bias voltage and temperature based on the Canonical section‐wise piecewise linear (CSWPL) model framework. A detailed description of the model's theory is provided. With data from 10‐W GaN devices, the model was implemented in commercial software and validated through both DC and radio frequency (RF) tests. A robust predictive ability is demonstrated by the obtained results, thus proving the accuracy of the developed modeling method. This model is superior to the standard CSWPL model in that it is capable of predicting transistor behavior at different bias voltages and temperatures using a single set of parameters, thereby greatly reducing the complexity of the model and the time required for extraction. [ABSTRACT FROM AUTHOR]

The research work proposes an efficient Gallium Nitride (GaN) based isolated bidirectional DC-DC (IBDC)-Triple Active Bridge (TAB) based multi-port converter (MPC) for electric vehicle (EV) charging. The developed GaN IBDC-TAB based MPC utilizes fewer components compared to conventional IBDC charging system if designed for two output ports. The proposed GaN IBDC-TAB based MPC incorporates one input port, Port 1, and two output ports, Port 2 and Port 3 for Level-1 and Level-2 EV charging systems respectively. In addition, the developed GaN IBDC-TAB can be operated in Single Active Bridge (SAB), and Dual Active Bridge (DAB) modes as per operational requirements. A 12 kW GaN IBDC-TAB based MPC is designed and evaluated using LTspice XVII software. In TAB mode of operation, Port 2 delivers 1.5 kW, and Port 3 delivers 10.6 kW. The maximum efficiency of 98.87 % is obtained in simulation for the MPC converter in TAB mode. For experimental validation, an approximately 1 kW prototype is presented with Port 1, Port 2, and Port 3 voltages as 230 V, 120 V, and 200 V respectively with an operating frequency of 100 kHz. The single-phase-shift control strategy is implemented for controlling the transmitted power in the developed GaN IBDC-TAB based MPC.

With high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight. However, due to the cascode structure, coupling with the parasitics in gate driver and power circuits, power converters based on cascode GaN are prone to overshoot and oscillate on switching waveforms, which may lead to serious EMC problems, or even device breakdown. The complicated structure of cascode GaN device makes the gate driver design comparatively complex. An analytical model of the switching process considering gate driver parameters is proposed in this article. The influence of gate driver parameters on switching behavior is investigated from the perspective of switching speed, waveform overshoot, and power loss. Trade-offs among overshoot, switching speed, and power loss are discussed; guidelines to design gate driver parameters are given.

In this article, a high-efficiency and high-density 2.5 kW four-level interleaved flying capacitor multilevel (FCML) totem-pole bridgeless power-factor-correction (PFC) rectifier with 200 V GaN devices is analyzed, designed, and tested. This 2.5 kW four-level continuous conduction mode (CCM) GaN totem pole PFC operates with three times inductor current ripple frequency than that of the switching frequency which significantly reduces the size of the inductors while also supporting switching loss reduction. This article compares the loss of the two-level CCM GaN totem-pole PFC, four-level non-interleaved FCML PFC and interleaved four-level FCML PFC with the same ripple frequency (300 kHz) and shows that the interleaved four-level CCM GaN PFC has much less device loss. In addition, this article discusses the detailed EMI spectrum analysis and derivation of the mathematical model for determining the attenuation requirement of the four-level interleaved FCML PFC converter followed by volumetric co-optimization of AC-side passives i.e., the boost inductor and differential mode (DM) EMI filter. A 2.5 kW four-level interleaved FCML GaN totem-pole PFC prototype with an optimized 94 kHz switching frequency is developed and tested in this article. The converter exhibits a peak efficiency of 99.14% with system power density reaching 89.47 W/inch3.

In the rapidly advancing field of 5G technology, efficient thermal management is essential for enhancing the performance and reliability of high-power-density integrated circuits (ICs). This paper introduces an innovative approach to cooling these critical components, significantly surpassing traditional methods. Our design optimizes heatsink and fan configurations through systematic experimentation, varying fin shapes, heatsink dimensions, and fan speeds. The results demonstrate that fan velocity is the most critical factor in reducing IC temperatures, as increased airflow dramatically lowers thermal output. Expanding the heatsink surface area further improves heat dissipation by enhancing airflow interaction, while a larger copper heatsink boosts thermal conduction, effectively reducing the final IC temperature. These optimizations streamline the cooling process, minimizing the need for more complex and expensive equipment. This research sets a new benchmark in thermal management, fostering the development of more efficient and reliable electronic systems in the era of advanced wireless communications. Our approach brings a new dimension to existing research by focusing on the optimization of heatsink and airflow designs specifically for ICs. While previous studies have explored broader thermal management strategies, our work addresses specific challenges in heat dissipation by refining geometric configurations and fan speed adjustments. These optimizations result in measurable improvements in both efficiency and scalability, particularly within the context of high-power 5G systems.

The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance (ρc < 1 × 10−4 Ω·cm2) was achieved with samples treated with an (NH4)2S-isopropanol solution, whereas the highest resistivity (ρc = 3.3 × 10−4 Ω·cm2) and surface roughness (Ra = 16 nm) were observed in samples prepared by standard methods. Annealing the contact system in an N2 + O2 + H2O atmosphere caused degradation through species inter-diffusion and metal-metal solid solution formation, irrespective of the preparation method. Standard prepared substrates developed a thin GaN-Au intermediate layer at the interface after heat treatment. Enhanced adhesion and the absence of GaN decomposition were observed in samples additionally cleaned with the (NH4)2S-solvent solution. Complete oxidation of nickel to NiO was observed in samples that underwent additional sulfur solution treatment. The intensity of metal species mixing and nickel oxidation was influenced by the metal diffusion rate and was affected by the initial state of the GaN substrate obtained through different wet treatment methods.

A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems. [ABSTRACT FROM AUTHOR]

In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is proposed to improve the gate-to-channel modulation capability of a high drain current. By using the p-GaN/AlN/AlGaN/AlN double heterostructure, the buried 2DEG channel is tailored and connected to the top metal gate, which acts as a local back gate. Benefiting from the dual-gate structure (i.e., top metal gate and 2DEG BBG), the drain current of the p-MISFET is significantly improved from −2.1 (in the conv. device) to −9.1 mA/mm (in the BBG device). Moreover, the dual-gate design also bodes well for the gate to p-channel control; the subthreshold slope (SS) is substantially reduced from 148 to ~60 mV/dec, and such a low SS can be sustained for more than 3 decades. The back gate effect and the inherent hole compensation mechanism of the dual-gate structure are thoroughly studied by TCAD simulation, revealing their profound impact on enhancing the subthreshold and on-state characteristics in the BBG p-MISFET. Furthermore, the decent device performance of the proposed BBG p-MISFET is projected to the complementary logic inverters by mixed-mode simulation, showcasing excellent voltage transfer characteristics (VTCs) and dynamic switching behavior. The proposed BBG p-MISFET is promising for developing GaN-on-Si monolithically integrated complementary logic and power devices for high efficiency and compact GaN power IC. [ABSTRACT FROM AUTHOR]

The main aim of this work is to present a step-by-step procedure to model and analyze the power loss distribution of three-level Gallium Nitride (GaN) inverters. It has been applied to three distinct three-phase three-level voltage source inverters utilized in electric traction drives: Active Neutral Point Clamped, Neutral Point Clamped and T-Type Neutral Point Clamped. The proposed analytical power loss modelling, combined with an equivalent representation of the electrical machine proved to be a viable solution to achieve a time-saving and low computational burden simulation platform, leading to satisfying accurate results. This has been confirmed by comparing the results carried out from the simulations of a 110 kW permanent magnet synchronous motor drive and those determined by considering a simplified circuital representation based on the proposed analytical power loss modelling. [ABSTRACT FROM AUTHOR]

Summary: In order to ensure that the electromagnetic compatibility and mutual interference of multiple radar network systems meet the requirements, a 55‐W gallium nitride (GaN) high harmonics suppression (HSs) high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with an operating frequency of 5.1–6.3 GHz is designed for radar network system. An HSs method using self‐resonant capacitor integrated in the output matching network of HPA is proposed to improve the HSs characteristics. The measured results show that under the condition of 100‐μs pulse width and 10% duty cycle, the HSs are greater than 48 dBc while the output power is greater than 55 W, the power gain is 21 dB, and the power additional efficiency (PAE) is 54%, which is suitable for use in radar network system. The size of the HPA is 3.55 × 4.05 mm2. [ABSTRACT FROM AUTHOR]

This contribution presents the AM/AM and AM/PM characteristics of a 6-bit Phase and Amplitude Setting Circuit realized in Gallium Nitride technology and operating at the Ku band. A test bench, based on three vector receivers and an absolute power reference, has been purposely devised to capture the deviation with respect to the linear behavior (known by the S-parameters) for both the magnitude and the phase of the vector response. The complete 64-state constellation is reported up to a 37 dBm of input power level, at which the effects of the static AM/AM and AM/PM distortion become evident, with about 3 dB of gain compression and 2.7 deg of phase conversion. The key figure of merit of the proposed test bench is the capability of operating with very high driving power levels (potentially up to 41 dBm), with possible applications in phased arrays, AESAs, and other signal conditioning systems. [ABSTRACT FROM AUTHOR]

The advantages of gallium nitride and silicon carbide transistors over silicon devices are highlighted. The design criteria for power modules in multi‐kilowatt applications to effectively leverage these advantages are described. Various concepts to overcome limitations associated with state‐of‐the‐art power module packaging presented in the literature are summarized and evaluated. A novel power module design comprising a 650 V, 300 A half‐bridge with integrated direct current–link and gate drivers is proposed. The results of a finite‐element analysis of its parasitic elements and subsequent double‐pulse test simulation are presented. [ABSTRACT FROM AUTHOR]

GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

The micro-light emitting diode (µLED) technology is poised to revolutionise display applications through the introduction of nanomaterials and Group III-nitride nanostructures. This review charts state-of-the-art in this important area of micro-LEDs by highlighting their key roles, progress and concerns. The review encompasses details from various types of nanomaterials to the complexity of gallium nitride (GaN) and III nitride nanostructures. The necessity to integrate nanomaterials with III-nitride structures to create effective displays that could disrupt industries was emphasised in this review. Commercialisation challenges and the economic enhancement of micro-LED integration into display applications using monolithic integrated devices have also been discussed. Furthermore, different approaches in micro-LED development are discussed from top-down and bottom-up approaches. The last part of the review focuses on nanomaterials employed in the production of micro-LED displays. It also highlights the combination of III-V LEDs with silicon LCDs and perovskite-based micro-LED displays. There is evidence that efficiency and performance have improved significantly since the inception of the use of nanomaterials in manufacturing these.

In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth morphology and non-linear I–V characteristics. Heat treatment in a N2 atmosphere leads to degradation of the contact microstructure, resulting in diffusion of Ga, void formation on the interface and mixing of metals. Annealing in a mixture of N2 and O2 improves adhesion and reduces contact resistance. However, this process also induces GaN decomposition and species mixing. The mixing of metal–Ga and metal–metal remains unaffected by the method of thermal treatment but depends on gas composition for thin Pd contacts. To achieve low-resistance contacts (≈1 × 10−4 Ω cm2), we found that increasing the Pd thickness and using N2 + O2 as the annealing environment are effective measures. Nevertheless, the degradation effect of the annealed contact microstructure in the form of the void generation becomes evident as the thickness of Pd increases. Laser diodes (LDs) with optimized palladium-based contacts operate at a voltage of 4.1 V and a current density of 3.3 kA/cm². [ABSTRACT FROM AUTHOR]

A major challenge in GaN-based metal-oxide-semiconductor (MOS) devices is significant hole trapping near the oxide/GaN interface. In this study, we show that the density and energy level of the hole traps depends crucially on the concentration of magnesium (Mg) dopants in GaN layers. Although the surface potential of a conventional SiO2/p-GaN MOS device is severely pinned by hole trapping, hole accumulation and very low interface state densities below 1011 cm−2 eV−1 are demonstrated for MOS capacitors on heavily Mg-doped GaN epilayers regardless of the degree of dopant activation. These findings indicate the decisive role of Mg atoms in defect passivation. [ABSTRACT FROM AUTHOR]

This article aims to study the adsorption of hazardous gases of nitric oxide (NO), nitrogen dioxide (NO2) and ammonia (NH3) by using monolayer graphitic GaN nanosheet with the employing density functional theory (DFT). The changes of charge density have shown a more important charge transfer for hexagonal honeycomb nanosheet of gallium nitride (GaN) which acts as the electron acceptor while gas molecules act as the stronger electron donors through adsorption on the graphitic-like GaN surface. The adsorption of NO and NO2 molecules introduced spin polarization in the GaN sheet, indicating that it can be employed as a magnetic gas sensor for NO and NO2 sensing. The partial density of states (PDOS) graphs have explained that the NO and NO2 states in GaN nanosheet, respectively, have more of the conduction band between –5 to –10 eV, while nitrogen and oxygen states have minor contributions. Ga sites in GaN nanosheet have higher interaction energy from Van der Waals' forces with gas molecules. GaN nanosheet represents having enough capability for adsorbing gases of NO, NO2 and NH3 through charge transfer from nitrogen atom and oxygen atom to the gallium element owing to intra-atomic and interatomic interactions. [ABSTRACT FROM AUTHOR]

This paper presents a 28 GHz GaN enhanced single‐sideband time‐modulated phased array (ESTMPA), based on a monolithic microwave integrated circuit (MMIC), including both a time‐modulated circuit and an RF front‐end module (FEM). The time‐modulated circuit mainly consists of a numerically controlled attenuator to balance the amplitude, compact phase shifters to generate balanced signals, a reconfigurable power divider, and a quadrature power divider. The FEM mainly consists of a low noise amplifier and a power amplifier, featuring codesign of input/output networks. Based on the in‐phase/quadrature (I/Q) composite modulation technique, a stepped modulation waveform, realized by the time‐modulated circuit, is used to enable a weighted array of phases. This helps generate a scanned beam at the first positive sideband and eliminate the undesired sidebands. The final MMIC‐based four‐element ESTMPA shows a relative suppression level of −16 dB at the positive fifth sideband and −13 dB at the zeroth sideband, and a much higher level at the other undesired sidebands. As a result, a wider signal bandwidth and a higher harmonic efficiency are achieved. In addition, the ESTMPA shows a beam sweeping angle from −30° to 30° in far‐field measurement. [ABSTRACT FROM AUTHOR]

The characteristics of an AlGaN/GaN high-electron-mobility transistor buffer structure are studied and optimized by employing an AlN/GaN superlattice (SL) structure. Through vertical leakage analysis and back-gate measurement, combined with Silvaco-TCAD simulation, the influence of buffer trapson the carrier transport behaviors and electrical performance for SL buffer structures under a high electric field is analyzed. The AlN/GaN SL buffer structures are further optimized with various AlN/GaN thickness ratios and their total thickness through both simulation and experimental studies. As a result, a high breakdown voltage of up to 1.3 kV with a maximum breakdown electric field of 2.8 MV cm−1 has been achieved. Moreover, the buffer trapping effect is dramatically suppressed, leading to a minimum drop of channel current for the optimized sample, in which donor traps are found to play a positive role in the device dynamic characteristics. [ABSTRACT FROM AUTHOR]

The power loss estimation of a gallium nitride enhancement-mode high electron mobility transistor (GaN E-HEMT) is necessary to optimize a thermal model of a power conversion system. However, many manufacturers do not provide a switching energy in their datasheets. To estimate switching energy using information provided in the datasheet, the parasitic capacitance of the GaN E-HEMT is utilized. The switching loss of the GaN E-HEMT can be easily obtained with a conventional method. However, this process does not consider nonlinearity of the parasitic capacitance, which results in large errors and makes thermal model optimization impossible. This paper proposes an enhanced switching loss calculation model considering the non-linear parasitic capacitances of a GaN E-HEMT. To obtain accurate switching energy, a second-order exponential function using regression analysis is used to model the non-linear parasitic capacitance of the GaN E-HEMT. A theoretical analysis of the proposed method has been discussed. Then a double pulse test (DPT) has been performed to verify the proposed method. The proposed method almost corresponds to the experimental results within ± 20%, and it provides a simple and intuitive capacitance model. [ABSTRACT FROM AUTHOR]

Copyright of Journal of Beijing University of Technology is the property of Journal of Beijing University of Technology, Editorial Department and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details on the architecture definition and design process to maximize delivered power are provided along with stability and thermal analyses. To optimize the amplifier performance, an asymmetry was included at the output combiner. Experimental results show that the HPA achieves a 39.5 dBm pulsed-mode output power, a peak linear gain of 23 dB, a drain efficiency of 27%, and good input/output matching in the 16–19 GHz frequency range. The chip area is 5 × 3.5 mm 2 and for the measurements was mounted on a custom-made module. These results demonstrate that GaN-on-Si-based Solid-State Power Amplifiers (SSPAs) can be used for the implementation of Ku-band active radars. [ABSTRACT FROM AUTHOR]

We demonstrate in this work effective linearization on a millimeter-wave (mm-Wave) broadband monolithic gallium nitride (GaN) power amplifier (PA) using digital predistortion (DPD). The PA used is a two-stage common-source (CS)/2-stack PA that operates in the mm-Wave 5G FR2 band, and it is linearized with the generalized memory polynomial (GMP) DPD and tested using 4G (4th generation) long-term-evolution (LTE) 64-QAM (quadrature amplitude modulation) modulated signals with a PAPR (peak-to-average power ratio) of 8 dB. Measurement results after implementing GMP DPD indicate considerable broadband improvement in the adjacent channel leakage power ratio (ACLR) of 16.9 dB/17.3 dB/16.5 dB/15.1 dB at 24 GHz/28 GHz/37 GHz/39 GHz, respectively, with a common average POUT of 15 dBm using a 100 MHz LTE 64-QAM input signal. At a fixed frequency of 28 GHz, the GaN PA after GMP DPD achieved signal bandwidth-dependent ACLR improvement and root-mean-square (rms) EVM (error vector magnitude) reduction using 20 MHz/40 MHz/80 MHz/100 MHz LTE 64-QAM waveforms with a common average POUT of 15 dBm. The GaN PA thus achieved very good linearization results compared to that in other state-of-the-art mm-Wave PA DPD studies in the literature, suggesting that GMP DPD should be rather effective for linearizing mm-Wave 5G broadband GaN PAs to improve POUT, Linear. [ABSTRACT FROM AUTHOR]

Copyright of Journal of King Abdulaziz University: Engineering Sciences is the property of King Abdulaziz University, Scientific Publishing Centre and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Context: Langmuir adsorption of gas molecules of NO, NO2, and NH3 on the graphitic GaN and GaP sheets has been accomplished using density functional theory. The changes of charge density have shown a more important charge transfer for GaN compared to GaP which acts both as the electron donor while gas molecules act as the stronger electron acceptors through adsorption on the graphitic-like GaN surface. The adsorption of NO and NO2 molecules introduced spin polarization in the PL-GaN sheet, indicating that it can be employed as a magnetic gas sensor for NO and NO2 sensing. Methods: The partial electron density states based on "PDOS" graphs have explained that the NO and NO2 states in both of GaN and GaP nanosheets, respectively, have more of the conduction band between − 5 and − 10 eV, while expanded contribution of phosphorus states is close to gallium states, but nitrogen and oxygen states have minor contributions. GaN and GaP nanosheets represent having enough capability for adsorbing gases of NO, NO2, and NH3 through charge transfer from nitrogen atom and oxygen atom to the gallium element owing to intra-atomic and interatomic interactions. Ga sites in GaN and GaP nanosheets have higher interaction energy from Van der Waals' forces with gas molecules. [ABSTRACT FROM AUTHOR]

We present a theoretical and experimental analysis of the use of a reversed uneven power splitting (RUPS) technique for asymmetric Doherty power amplifiers (PAs). The RUPS technique utilizes an uneven power splitter that drives more input power into the carrier amplifier, enabling shallow class-C operation of the peaking amplifier. Although the RUPS technique has played a significant role in achieving high-performance Doherty PAs, there has been a lack of comprehensive research examining the fundamental factors that contribute to its effectiveness. We conducted numerical and experimental investigations to demonstrate that the RUPS Doherty PA exhibits significant improvements in efficiency, gain, and linearity compared to conventional Doherty PAs with even power splitting (EPS). For the experiments, the EPS and RUPS networks were developed using lumped-element directional couplers. The fabricated RUPS Doherty PA, based on a 0.25- $\mu$ m GaN HEMT monolithic microwave integrated circuit (MMIC) process, achieves superior overall performance at 2.14 GHz compared to the conventional EPS Doherty PA, without requiring any additional circuitry. The results verify that the RUPS technique can enhance the performance of asymmetric Doherty PAs.

This article presents a design methodology for an asymmetrical Doherty Power Amplifier (DPA) which achieves a high average efficiency at back off across its operating bandwidth. It is shown that by combining continuous modes with post matching techniques, it is possible to achieve excellent efficiency performance whilst maintaining broadband operation. Analysis is provided on how the knee effect can reduce the effective potential efficiency of Class J and Continuous Inverse Class F modes. An optimum combination of $2\text{nd}$ and $3\text{rd}$ harmonic impedances is then proposed for the carrier PA which can minimise this knee effect impact on efficiency performance. Also, it is shown how the drain supply can be used to improve the bandwidth over which an intrinsic optimum load can be maintained. Based on this analysis, a simple iterative design procedure is then presented which can be directly implemented with standard RF design tools. This design procedure is then verified in the design and manufacture of a prototype DPA using the Wolfspeed CG2H40010F GaN HEMT. The realised PA operates between 2.1 and 3.2 GHz with a peak power output of between 43.9 and 44.5 dBm. The PA achieves a high average drain efficiency of 64.7 % at 8–9 dB of back off. The DPA has been tested with and without digital pre-distortion (DPD) by considering a 60 MHz LTE OFDM signal with 9 dB peak-to-average power ratio (PAPR). When DPD is enabled, the presented DPA achieves a drain efficiency of between 52.1–64.3 with an adjacent channel power ratio (ACPR) of between −42.2– −44.1 dB over the bandwidth of 2.1–3.2 GHz.

This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistors were collected on two independent noise parameter (NP) systems from 8–50 GHz and 75–110 GHz. The resulting raw NPs were stitched together to yield ultra broadband 8–110 GHz smoothed NPs. Several comparisons and summaries of the minimum noise figure and associated gain are reported for the six different GaN technologies. This work seeks to provide an initial database for noise and gain of GaN HEMTs at mm-wave frequencies to quantify progress on technology in the future.

Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern power electronics applications. Material attributes of wide-band-gap devices (such as GaN and SiC) possess the ability to bridge these gaps. They can be used for higher power applications and provide high power-density, high efficiency and better thermal performance. GaN-based devices in electric vehicle power modules make the vehicle more efficient, achieving an extended range for the same battery size. Worldwide, researchers and engineers are working on GaN-based power-electronics modules. On the one hand, the utilisation of GaN switches in power modules eliminates a few existing design concerns. While it also introduces new challenges for designers. Mere replacing Si with GaN doesn’t give the stipulated result. This article identifies the works related to GaN-based DC-DC converter modules to determine how researchers address the circuit design issues with GaN. This paper presents a detailed description of the material benefits of GaN and paves the path of future work by identifying the research gap in the field of GaN-based DC-DC converters.

The proliferation of artificial intelligence (AI) has opened up new avenues for the modeling of power electronics with ultra-fast transient responses, such as wide-bandgap (WBG) devices. This article highlights the significance of ultra-fast transient device-level hardware emulation for the DC railway microgrid (DRM) in real-time. To this end, the proposed approach partitions the DRM power system by transmission line method (TLM) and employs gated recurrent unit (GRU) and electromagnetic transient (EMT) modeling techniques for system-level subsystems. Meanwhile, for WBG devices, gallium nitride (GaN) high electron mobility transistors (HEMT) and silicon carbide (SiC) insulated gate bipolar transistors (IGBT) are modeled using a novel physical feature neuron network (PFNN), which offers high flexibility with a variable time-step (as low as 1 ns), thereby improving the accuracy, efficiency and accelerating the emulation on the field-programmable gate array (FPGA). The effectiveness of the proposed approach is confirmed by comparing the emulation results with offline simulation results obtained from PSCAD/EMTDC for system-level and SaberRD for device-level transients. The proposed PFNN approach provides strong versatility, ultra-fast transient emulation capability, and significantly improved accuracy, which bodes well for the future of power electronics device-level emulation.

This paper presents a novel nonlinear behavioral modeling methodology based on long-short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility transistors (HEMTs). There are both theoretical foundations and practical implementations of the modeling procedure provided in this paper. To determine the most appropriate optimizer algorithm for the model presented in this work, four different optimization algorithms are examined. The results of both simulation and experimental validation are provided based on a 10-W GaN HEMT device. According to the developed investigation, the model is capable of extrapolating and interpolating over multiple input power levels and frequencies, including linear, weakly nonlinear, and strongly nonlinear areas. The analysis of the simulated and measured results shows that the developed model has superior performance also when considering the DC drain current (Ids.). Compared with the existing support vector regression (SVR) based model and the Bayesian based model, the proposed approach shows a significantly improved extrapolation capability.

GaN integrated circuit technologies have dramatically progressed over the recent years. The prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output power densities, has created a paradigm shift in the established and emerging high-power applications. In this article, we present a review on the developments and prospects of GaN integrated circuit power amplifiers (PAs). The progress of GaN transistors including improvements in their important features, i.e., supply voltage, substrate material, transistor scaling approach, and device modeling are elaborated and the current state-of-the-art processes with 20-nm gate length, 450 GHz cut-off frequency, and over 600 V supply voltage are discussed. We also investigate developments in the GaN integrated circuit PA architectures and their implementation challenges including the reactive matching PAs capable of delivering over 100 W output power and operating up to 200 GHz, PA linearity, back-off efficiency enhancement, reconfigurable PAs, and distributed PA architectures. Finally, we discuss the prospects of GaN technology and possible future improvements, in transistor and circuit levels, which can advance performance and functionality of GaN integrated circuits.