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41 results on '"Gao, Caifang"'

13. Silicon–van der Waals heterointegration for CMOS-compatible logic-in-memory design

Author

Lee, Mu-Pai, primary, Gao, Caifang, additional, Tsai, Meng-Yu, additional, Lin, Che-Yi, additional, Yang, Feng-Shou, additional, Sung, Hsin-Ya, additional, Zhang, Chi, additional, Li, Wenwu, additional, Li, Jun, additional, Zhang, Jianhua, additional, Watanabe, Kenji, additional, Taniguchi, Takashi, additional, Ueno, Keiji, additional, Tsukagoshi, Kazuhito, additional, Ho, Ching-Hwa, additional, Chu, Junhao, additional, Chiu, Po-Wen, additional, Li, Mengjiao, additional, Wu, Wen-Wei, additional, and Lin, Yen-Fu, additional

Published
2023
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16. Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors.

Author

Liu, Xinling, Zhang, Chi, Li, Enlong, Gao, Caifang, Wang, Ruixue, Liu, Yu, Liu, Fucai, Shi, Wu, Yuan, Yahua, Sun, Jian, Lin, Yen‐Fu, Chu, Junhao, and Li, Wenwu

Subjects
MEMRISTORS, VAN der Waals forces, SCHOTTKY barrier, SEMICONDUCTORS
Abstract

Memristors based on 2D semiconductors hold great promise due to their atomic‐level thickness and tunable optoelectronic properties. However, a significant challenge lies in suppressing the large off‐state current, which leads to additional standby power consumption. Here, a simple and versatile method is presented to address this issue by introducing a thin h‐BN interlayer between 2D semiconductors and the electrodes. The thickness of the h‐BN interlayer serves as a pivotal parameter for modulating the interfacial Schottky barrier, thereby influencing the off‐state current level. This fabricated graphene/α‐In2Se3/h‐BN/Cr‐Au memristor, forming a van der Waals heterostructure, exhibits unipolar resistive switching behavior. Remarkably, the memristor incorporating an 8 nm h‐BN interlayer showcases an ultralow off‐state current of 4.2 × 10−13 A, five orders of magnitude lower than that without the h‐BN interlayer. It also achieves a current switching on/off ratio of up to 109 and realizes 32 distinct resistance states, enabling robust multi‐bit memory capabilities. Excellent stability and durability are maintained due to the self‐encapsulation of the h‐BN interlayer. Furthermore, this method is also applicable to memristors built on HfS2, WS2, and WSe2, highlighting its broad potential for technological applications. [ABSTRACT FROM AUTHOR]

Published
2024
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28. Optically Modulated HfS2-Based Synapses for Artificial Vision Systems

Author

Xiong, Hao, primary, Xu, Liping, additional, Gao, Caifang, additional, Zhang, Qing, additional, Deng, Menghan, additional, Wang, Qiangfei, additional, Zhang, Jinzhong, additional, Fuchs, Dirk, additional, Li, Wenwu, additional, Cui, Anyang, additional, Shang, Liyan, additional, Jiang, Kai, additional, Hu, Zhigao, additional, and Chu, Junhao, additional

Published
2021
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31. Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics

Author

Gao, Caifang, primary, Lee, Mu‐Pai, additional, Li, Mengjiao, additional, Lee, Ko‐Chun, additional, Yang, Feng‐Shou, additional, Lin, Che‐Yi, additional, Watanabe, Kenji, additional, Taniguchi, Takashi, additional, Chiu, Po‐Wen, additional, Lien, Chen‐Hsin, additional, Wu, Wen‐Wei, additional, Lin, Shu‐Ping, additional, Li, Wenwu, additional, Lin, Yen‐Fu, additional, and Chu, Junhao, additional

Published
2020
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32. Effects of Ni Doping Composition on the Physical and Electrical Properties of Cu 1- x Ni x O Thin-Film Transistors.

Author

Liu, Jingchi, Gao, Caifang, Yang, Jiayan, He, Huan, Ou-Yang, Wei, Zhang, Dongxu, and Li, Wenwu

Subjects
*TRANSISTORS, *THIN film transistors, *THRESHOLD voltage, *CHARGE carrier mobility, *COPPER oxide
Abstract

Compared to n-type oxide thin-film transistors (TFTs) with excellent performance, the physical properties of p-type oxide films and their TFTs performance still need to be explored. Here, the Ni-doped CuO (Cu1-xNixO) films were prepared by the solution-processed method. Compared to pure CuO film, the doping of Ni can promote the crystallization of Cu1-xNixO films. By analysis of the spectroscopic ellipsometry (SE), the optical bandgap of Cu1-xNixO films can be modulated from 2.16 to 2.35 eV with increasing the Ni composition. Moreover, the electrical curves of Cu1-xNixO TFTs demonstrate a typical p-type semiconducting behavior. The TFT with a Ni composition of 0.5% shows the optimal performance with a carrier mobility of 0.01 cm2V−1s−1, a threshold voltage of 3.72 V, and a subthreshold swing of 5.35 V/dec. This work provides an efficient approach to modulate the device performance of p-type CuO TFTs. [ABSTRACT FROM AUTHOR]

Published
2022
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37. Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics.

Author

Gao, Caifang, Lee, Mu‐Pai, Li, Mengjiao, Lee, Ko‐Chun, Yang, Feng‐Shou, Lin, Che‐Yi, Watanabe, Kenji, Taniguchi, Takashi, Chiu, Po‐Wen, Lien, Chen‐Hsin, Wu, Wen‐Wei, Lin, Shu‐Ping, Li, Wenwu, Lin, Yen‐Fu, and Chu, Junhao

Subjects
*DRUG dosage, *NEUROPLASTICITY, *SYNAPSES, *REWARD (Psychology), *DRUG addiction, *ELECTRONICS
Abstract

The human brain is often likened to an incredibly complex and intricate computer, rather than electrical devices, consisting of billions of neuronal cells connected by synapses. Different brain circuits are responsible for coordinating and performing specific functions. The reward pathway of the synaptic plasticity in the brain is strongly related to the features of both drug addiction and relief. In the current study, a synaptic device based on layered hafnium disulfide (HfS2) is developed for the first time, to emulate the behavioral mechanisms of drug dosage modulation for neuroplasticity. A strong gate‐dependent persistent photocurrent is observed, arising from the modulation of substrate‐trapping events. By controlling the polarity of gate voltage, the basic functions of biological synapses are realized under a range of light spiking conditions. Furthermore, under the control of detrapping/trapping events at the HfS2/SiO2 interface, positive/negative correlations of the An/A1 index, which significantly reflected the weight change of synaptic plasticity, are realized under the same stimulation conditions for the emulation of the drug‐related addition/relief behaviors in the brain. The findings provide a new advance for mimicking human brain plasticity. [ABSTRACT FROM AUTHOR]

Published
2021
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40. Molecular Logic Gate for Sensing pH/Peroxynitrite with Potential Applications in Cisplatin Treatment

Author

Guo, Lifang, Ding, Yuxi, Li, Lu, Gao, Caifang, Su, Jianhua, and Zhang, Zhiyun

Abstract

Cisplatin is a common chemotherapy drug for multiple solid tumors; however, due to the nitrification of peroxynitrite (ONOO–), a series of side effects seriously affect its dose and efficacy. Considering that the reactivity of ONOO–is significantly affected by pH in vitro, revealing their roles in living cells contributes to understanding the side-effect process induced by cisplatin. Herein, we present a near-infrared fluorescent logic gate for sensing pH/ONOO–, which can accurately discriminate four scenarios (no analyte, analyte H+alone, analyte ONOO–alone, and H++ ONOO–) and which one comes first. With this probe, the significant roles of pH and ONOO–in cisplatin treatment are disclosed, in which the cell account shows a dramatic reduction accompanied by decreased pH and upregulated ONOO–levels. By artificially recovering the pH, the ONOO–content and cell account can maintain a stable state, possibly due to the protection from acidification and nitration. This work provides an ideal pH/ONOO–logical sensor for revealing their potential roles under cisplatin, which is expected to proffer new insights into more related diseases and drug research.

Published
2024
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41. Optically Modulated HfS 2 -Based Synapses for Artificial Vision Systems.

Author

Xiong H, Xu L, Gao C, Zhang Q, Deng M, Wang Q, Zhang J, Fuchs D, Li W, Cui A, Shang L, Jiang K, Hu Z, and Chu J

Subjects
Biomimetic Materials chemical synthesis, Biomimetic Materials chemistry, Disulfides chemical synthesis, Disulfides chemistry, Hafnium chemistry, Humans, Light, Machine Learning, Materials Testing, Synapses chemistry, Biomimetic Materials metabolism, Disulfides metabolism, Hafnium metabolism, Neural Networks, Computer, Synapses metabolism
Abstract

The simulation of human brain neurons by synaptic devices could be an effective strategy to break through the notorious "von Neumann Bottleneck" and "Memory Wall". Herein, opto-electronic synapses based on layered hafnium disulfide (HfS 2 ) transistors have been investigated. The basic functions of biological synapses are realized and optimized by modifying pulsed light conditions. Furthermore, 2 × 2 pixel imaging chips have also been developed. Two-pixel visual information is illuminated on diagonal pixels of the imaging array by applying light pulses (λ = 405 nm) with different pulse frequencies, mimicking short-term memory and long-term memory characteristics of the human vision system. In addition, an optically/electrically driven neuromorphic computation is demonstrated by machine learning to classify hand-written numbers with an accuracy of about 88.5%. This work will be an important step toward an artificial neural network comprising neuromorphic vision sensing and training functions.

Published
2021
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