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β-GaN nanocrystalline have been successfully synthesized from the nitridation of GaP nanocrystalline at low temperatures by gas_phase chemical reaction. The s tarting GaP nanocrystalline has a large specific surface and a high reactivity that can reduce remarkably the difficulty of nitridation. The results of GaP nan ocrystalline in N2 at different heating rates support the fact that β-GaN nan ocrystalline can form in GaP nanocrystalline via N-P metathesis gas_phase chemic al mechanism. The mechanism is different when different heating rate was used. T his method is very simple and is used generally to synthesize β-GaN nanopartic les or nanorods.

GaP nanorods with widths of 20—40nm and lengths of 200—500nm, and nanoparticles with diameters of 20—40nm were synthesized via the mild benzene-thermal route, using Na, P and GaCl3 as the starting materials. X-ray powder diffraction, Transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the morphology and crystal structure of the products. The results indicated that when the reaction temperature is lower than 250℃, the products consist almost is GaP nanorods. The nanorods change into nanoparticles gradually with increasing temperature. When the reaction temperature exceed 280℃, the products are regularly particles. The reaction proceeds through a metallic gallium intermediate and a solution-liquid-solid mechanism is proposed for the one-dimensional growth.