26 results on '"Garrab, Hatem"'
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2. Performance Evaluation and Parameter Analysis of a Microwave Sensor for Liquid Characterization
3. Simulation-Based Analysis of L-Shaped RFID Tags for Enhanced Performance
4. 1800 MHz and 2.45 GHz Antennas for RF Energy Harvesting Applications
5. An Electrothermal Behavior Study of the Power PiN Diode
6. A Detailed Extraction Procedure of Thyristor Design Parameters
7. A Detailed Extraction Procedure of Thyristor Design Parameters
8. An Electrothermal Behavior Study of the Power PiN Diode
9. Losses evaluation in converters using the calorimetric technique
10. On the role of the N-[N.sup.+] junction doping profile of a PIN diode on its turn-off transient behavior
11. On the extraction of PiN diode design parameters for validation of integrated power converter design
12. A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices
13. An exprimental procedure to extract the tq parameter of thyristors
14. The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case
15. On the extraction of the design parameters of power BJTs
16. A Novel Approach to Accurately Determine the $t_{q}$ Parameter of Thyristors
17. Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs
18. A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems
19. The advantage of silicon carbide material in designing of power bipolar junction transistors
20. A Novel Approach to Accurately Determine the tq Parameter of Thyristors.
21. A comparison between turn-off time of 4H-SiC and silicon power thyristor having the same breakdown voltage 5kV
22. A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV
23. A novel approach to extract accurate design parameters of PiN diode
24. Role of the temperature distribution on the PN junction behaviour in the electro‐thermal simulation
25. A novel approach to extract accurate design parameters of PiN diode.
26. On the Role of the N-N+ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior.
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