238 results on '"Gaska, Remis"'
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2. Deep Ultraviolet Light-Emitting Diodes
3. Electronic Devices Based on Group III Nitrides ☆
4. Migration-enhanced metal–organic chemical vapor deposition of Al xIn 1− xN/GaN heterostructures ( x>0.75) on c-plane sapphire
5. Surface acoustic wave velocity in single-crystal AlN substrates
6. Deep Ultraviolet Light-Emitting Diodes
7. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
8. Light-Emitting Diodes: Progress in Solid-State Lighting
9. SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION
10. 5-TERMINAL THz GaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES
11. PROGRESS IN HIGH EFFICIENCY UV LED RESEARCH FOR REAGENTLESS BIOAGENT DETECTION AND WATER PURIFICATION
12. Generation-recombination noise in Gn/AlGaN heterostructure field effect transistors
13. GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES
14. GaN-BASED POWER HIGH ELECTRON MOBILITY TRANSISTORS
15. Carrier Lifetimes in GaN Revealed by Studying Photoluminescence Decay in Time and Frequency Domains
16. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
17. Surface Acoustic Waves And Guided Optical Waves In AlGaN Films
18. Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors
19. Attenuation of Surface Acoustic Waves by Carbon Nanotubes
20. Properties of Surface Acoustic Waves in AlN And GaN
21. Low threshold for optical damage in AlGaN epilayers and heterostructures.
22. Efficiency of light emission in high aluminum content AlGaN quantum wells.
23. Electronic Devices Based on Group III Nitrides
24. Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content
25. High-efficiency UV LEDs on sapphire
26. Deep UV LEDs for Public Health Applications
27. New Approaches to Realizing High Power Nitride Based Field Effect Transistors
28. High power AlGaN ultraviolet light emitters
29. Low RC-Constant Perforated-Channel HFET
30. Puslaidininkinė lempa šviesos terapijai
31. Carrier dynamics and localization in AlInN/GaN heterostructures
32. Scanning near-field optical spectroscopy of AlGaN epitaxial layers
33. Transient photoreflectance of AlInN/GaN heterostructures
34. Hot-electron micro & nanobolometers based on low-mobility 2DEG for high resolution THz spectroscopy
35. Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells
36. GaN microwave varactors with insulated electrodes
37. 500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits
38. III-Nitride Materials and Devices for Power Electronics
39. AlGaN/GaN HEMTs for energy efficient systems
40. Carrier dynamics and localization in AlInN/GaN heterostructures
41. Deep Ultraviolet (DUV) Light-Emitting Diodes (LEDs) to Maintain Freshness and Phytochemical Composition During Postharvest Storage
42. Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
43. Photoluminescence efficiency droop and stimulated recombination in GaN epilayers
44. Physics of visible and UV LED devices
45. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
46. 278 nm deep ultraviolet LEDs with 11% external quantum efficiency
47. Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content
48. Scanning near‐field optical spectroscopy of AlGaN epitaxial layers
49. DEEP ULTRAVIOLET LED-BASED SELECTIVE SENSOR FOR COMBUSTION GASES
50. DEEP ULTRAVIOLET LED–BASED OZONE SENSOR
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