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Herein, a process for the large‐area passivating and contacting of nanowire‐based solar cells is demonstrated. The nanowire‐based solar cells are prepared on layered laser crystallization (LLC) polycrystalline silicon (pc‐Si) thin films with thickness less than 2 μm. It is demonstrated that the space between the nanowires can be filled with a passivating dielectrics Al2O3 layer, and the nanowire tips can be exposed by a self‐regulating selective etching of the Al2O3 deposited on the tips and that on the sidewalls. The exposed tips of the nanowires can be connected by a transparent conducting aluminum‐doped zinc oxide (Al:ZnO or AZO) layer deposited by atomic layer deposition (ALD). The laser beam‐induced current mapping (LBIC) demonstrates that the current density can increase up to 63% at 633 nm due to light trapping and the superior passivation of the nanowires with an thin pc‐Si film of only 1.73 μm. [ABSTRACT FROM AUTHOR]

Laser safety is starting to play an increasingly important role, especially when the laser is used as a tool. Passive laser safety systems quickly reach their limits and, in some cases, provide inadequate protection. To counteract this, various active systems have been developed. Flexible and especially textile-protective materials pose a special challenge. The market still lacks personal protective equipment (PPE) for active laser safety. Covering these materials with solar cells as large-area optical detectors offers a promising possibility. In this work, an active laser protection fabric with amorphous silicon solar cells is presented as a large-scale sensor for continuous wave and pulsed lasers (down to ns). First, the fabric and the solar cells were examined separately for irradiation behavior and damage. Laser irradiation was performed at wavelengths of 245, 355, 532, and 808 nm. The solar cell sensors were then applied directly to the laser protection fabric. The damage and destruction behavior of the active laser protection system was investigated. The results show that the basic safety function of the solar cell is still preserved when the locally damaged or destroyed area is irradiated again. A simple automatic shutdown system was used to demonstrate active laser protection within 50 ms. [ABSTRACT FROM AUTHOR]

In order to facilitate the design freedom for the implementation of textile-integrated electronics, we seek flexible transparent conductive electrodes (TCEs) that can withstand not only the mechanical stresses encountered during use but also the thermal stresses of post-treatment. The transparent conductive oxides (TCO) typically used for this purpose are rigid in comparison to the fibers or textiles they are intended to coat. In this paper, a TCO, specifically aluminum-doped zinc oxide (Al:ZnO), is combined with an underlying layer of silver nanowires (Ag-NW). This combination brings together the advantages of a closed, conductive Al:ZnO layer and a flexible Ag-NW layer, forming a TCE. The result is a transparency of 20–25% (within the 400–800 nm range) and a sheet resistance of 10 Ω/sq that remains almost unchanged, even after post-treatment at 180 °C. [ABSTRACT FROM AUTHOR]

A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a‐Si) layers deposited on solar‐grade Czochralski wafers with SiOx tunneling layers is investigated. In a first step, an interface oxide is grown and a highly doped n‐type a‐Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20 mm s−1 are used. Electron backscattering diffraction and quasi‐steady‐state photo conductance measurements indicate that the a‐Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open‐circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06 ms and an implied open‐circuit voltage up to 711 mV after a passivation step. [ABSTRACT FROM AUTHOR]

Based on well-defined lab conditions, we have developed experimental methods to characterize bifacial laser crystallized multicrystalline silicon (mc-Si) thin film solar cells fabricated on glass. Key parameters which determine the performance of the bifacial solar cells such as light intensity and incidence angle dependence on both sides have been characterized. From these parameters and the local irradiance data, the annual power output of the bifacial solar cells can be simulated easily. In addition, bifacial measurements under well-defined conditions using a single sun simulator have been performed by means of a mirror. The best bifacial mc-Si thin film solar cell shows a “bifacial efficiency” of 12.4% compared to state of the art monofacial mc-Si thin film counterpart of 12.1%. According to our simulation, even a “bifacial efficiency” above 14% is realistic if the solar cell is installed in front of a white diffuse scattering surface with a reflectance of ~90%. A threshold of 24% additional light contribution at which the bifacial mc-Si thin film solar cells outperform the monofacial ones have been determined by simulations. This shows that the advantages of the bifacial cells can already be observed at very low level (<25%) of additional reflected light contribution. [ABSTRACT FROM AUTHOR]

The integration of electronic functionalities into textiles for use as wearable sensors, energy harvesters, or coolers has become increasingly important in recent years. A special focus is on efficient thermoelectric materials. Copper iodide as a p-type thermoelectrically active, nontoxic material is attractive for energy harvesting and energy generation because of its transparency and possible high-power factor. The deposition of CuI on polyester spacer fabrics by wet chemical processes represents a great potential for use in textile industry for example as flexible thermoelectric energy generators in the leisure or industrial sector as well as in medical technologies. The deposited material on polyester yarn is investigated by electron microscopy, x-ray diffraction and by thermoelectric measurements. The Seebeck coefficient was observed between 112 and 153 µV/K in a temperature range between 30 °C and 90 °C. It is demonstrated that the maximum output power reached 99 nW at temperature difference of 65.5 K with respect to room temperature for a single textile element. However, several elements can be connected in series and the output power can be linear upscaled. Thus, CuI coated on 3D spacer fabrics can be attractive to fabricate thermoelectric devices especially in the lower temperature range for textile medical or leisure applications. [ABSTRACT FROM AUTHOR]

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%. [ABSTRACT FROM AUTHOR]

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600mV and a power conversion efficiency of 10%. [ABSTRACT FROM AUTHOR]

Double layers of deuterated and hydrogenated amorphous silicon (a‐Si:H) on glass are heated in the ambient by scanning with a green (532 nm) continuous wave laser. The hydrogen diffusion length in the laser spot is obtained from the deuterium (D)–hydrogen (H) interdiffusion measured by secondary ion mass spectrometry (SIMS), the temperature in the laser spot is obtained by calculation. Under certain conditions, detachment of the deuterated layer from the hydrogenated layer is observed in the SIMS depth profiles, visible by rising oxygen and carbon signals at the D/H interface attributed to in‐diffusion of atmospheric gas species like water vapor, oxygen, and carbon oxide. Stacks involving both undoped and boron‐doped a‐Si:H films show disintegration. The results suggest that the parameters leading to the disintegration effects are the presence of a plane of reduced material cohesion at the D/H interface, a sizeable H diffusion length and a rather high heating rate. Herein, it is likely considered that the observed layer disintegration process is involved in the peeling of a‐Si:H films upon fast heating. Furthermore, the results show that rapid laser heating can be used to detect planes of reduced material cohesion which may compromise the electronic properties of a‐Si:H‐based stacks. [ABSTRACT FROM AUTHOR]

Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980 nm, with the 808 nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980 nm diode laser system would be the choice for the potential industrial production. Polycrystalline silicon thin film solar cells on glass are fabricated by laser-induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980 nm is compared to the 808 nm laser normally used. Solar cells show comparable crystallographic and optoelectronic characteristics. [ABSTRACT FROM AUTHOR]

Rapid thermal annealing by, e.g., laser scanning of hydrogenated amorphous silicon (a-Si:H) films is of interest for device improvement and for development of new device structures for solar cell and large area display application. For well controlled annealing of such multilayers, precise knowledge of temperature and/or hydrogen diffusion length in the heated material is required but unavailable so far. In this study, we explore the use of deuterium (D) and hydrogen (H) interdiffusion during laser scanning (employing a continuous wave laser at 532 nm wavelength) to characterize both quantities. The evaluation of temperature from hydrogen diffusion data requires knowledge of the high temperature (T > 500 °C) deuterium-hydrogen (D-H) interdiffusion Arrhenius parameters for which, however, no experimental data exist. Using data based on recent model considerations, we find for laser scanning of single films on glass substrates a broad scale agreement with experimental temperature data obtained by measuring the silicon melting point and with calculated data using a physical model as well as published work. Since D-H interdiffusion measures hydrogen diffusion length and temperature within the silicon films by a memory effect, the method is capable of determining both quantities precisely also in multilayer structures, as is demonstrated for films underneath metal contacts. Several applications are discussed. Employing literature data of laser-induced temperature rise, laser scanning is used to measure the H diffusion coefficient at T > 500 °C in a-Si:H. The model-based high temperature hydrogen diffusion parameters are confirmed with important implications for the understanding of hydrogen diffusion in the amorphous silicon material. [ABSTRACT FROM AUTHOR]

Abstract: It is shown in this paper that indeed silicon nanotechnology can significantly improve the performance of solar cells made on low-cost materials like polycrystalline silicon (pc-Si) thin films formed on glass substrates. By proper engineering of the nanowires (cleaning of the metal contamination from the metal-assisted wet chemical etching and passivation by a-Si:H emitter as well as by an ultrathin Al2O3 tunnel layer on the emitter surface) and by proper design of the cell structure (superstrate configuration), the detrimental effects related to the nanowires can be avoided while the light trapping properties remain. In superstrate configuration with an Ag reflector, a prototype solar cell with efficiency of 10% has been realized on a pc-Si thin film with a thickness of only 8µm formed on glass, resulting from an enhanced photocurrent due to light trapping by silicon nanowires. Further optimization steps are discussed and targeted to improve the efficiency and the performance of the solar cells. [Copyright &y& Elsevier]

Abstract: Polycrystalline silicon thin film solar cells on a glass substrate are investigated. The solar cell layer structure was generated by a two-step process in which first a 100–600nm thin seed layer is formed by diode laser crystallization of electron beam evaporated amorphous silicon. In a second step this layer is epitaxially thickened to 2–3.5μm by layered laser crystallization. In this process further amorphous silicon is deposited and in situ repeatedly is irradiated by excimer laser pulses. The polycrystalline layer consists of grains several hundreds of microns long and several tens of microns wide and it contains a p+–p–n+ doping profile. After deposition a rapid thermal annealing and hydrogen passivation steps follow. The back and front contacts are prepared after mesa structuring. The influence of the seed layer thickness on the solar cell performance was investigated. In addition, the absorber contamination due to the background pressure during absorber deposition and its influence on the short circuit current density was investigated. The best parameters reached for various solar cells are 540mV open circuit voltage, 20.3mA/cm2 short circuit current density (without light trapping), 75% fill factor, and 5.2% efficiency. [Copyright &y& Elsevier]

Silicon nanowire (SiNW) based solar cells are a promising candidate for third generation solar cells with high efficiency, which will further reduce the cost of the PV modules, making it competitive with conventional energy sources. In this paper the wet chemical etching process for generating silicon nanowires is investigated on different low-cost substrate materials. These nanowires are useful for a radial pn-junction solar cell with core-shell configuration, which allows for using absorber materials with low-carrier lifetime. In this work, wet chemical nanowire etching is applied to edge-defined film-fed growth (EFG) mc-Si wafers, mc-Si wafers made from metallurgical grade Si, multicrystalline (mc-Si) thin films deposited on glass, and thin crystallized films deposited on mc-Si wafers produced from metallurgical grade Si. A proof of concept for using low-cost materials in PV is demonstrated for SiNWs prepared on mc-Si wafer produced from highly doped MG-Si. [ABSTRACT FROM AUTHOR]

Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g., for solar cells and modules. Using continuous wave line focus laser irradiation at 808 nm, about 10 μm thick microcrystalline silicon layers are fabricated by liquid-phase crystallization of amorphous or nanocrystalline silicon layers deposited by electron beam evaporation on Borofloat 33 glass. To achieve high solar cell efficiencies with such thin silicon layers, effective light trapping structures at the silicon surface are needed to enhance the light absorption and thereby the current in the solar cell. At the same time, these surface structures must provide low surface recombination velocity to maintain high open circuit voltage ( Voc). Light trapping structures in LPCSG absorber prepared by conventional KOH texturing and by nanowire structuring of the solar cell backside are investigated. The impact of structures on short circuit current density ( Isc) is determined from optical measurements. As a new approach, effective carrier lifetime is measured in LPCSG absorbers using the quasi steady-state photoconductance method to determine the impact of structuring on surface recombination and implied Voc of solar cell precursors. Carrier lifetimes in the range of 300-400 ns are measured indicating a carrier diffusion length of more than 20 μm, which is 2-3 times larger than the layer thickness. It is found that a slight pyramidal surface texture by KOH solution provides a high level of light trapping increasing Isc by 17-18% and maintaining high Voc (>600 mV). The potential for current enhancement of nanowire structuring is higher (≈20%), but further optimization of nanowire dimensions and of surface cleaning of nanowire structures is needed to overcome higher surface recombination and the resulting Voc losses. [ABSTRACT FROM AUTHOR]

During the preparation of silicon thin film solar cells on glass substrates by diode laser induced liquid phase crystallization (LPC), cracking is an issue. This is due to thermal stresses caused by high temperature gradients within the sample. In this paper, the relation between thermal stress and the temperature distribution within the sample during LPC is discussed. Experiments for two sets of laser irradiation parameters were done leading to crack free or cracked crystallization of the film. Additionally, the evolution of temperature during LPC was modeled numerically. Based on the simulation, the thermal stresses introduced were calculated. The complex viscoelastic problem was simplified to an elastic multilayer model, which can be solved analytically. The theoretical results can explain the experimental behavior. [ABSTRACT FROM AUTHOR]

We present the design considerations of an autonomous wireless sensor and discuss the fabrication and testing of the various components including the energy harvester, the active sensing devices and the power management and sensor interface circuits. A common materials platform, namely, nanowires, enables us to fabricate state-of-the-art components at reduced volume and show chemical sensing within the available energy budget. We demonstrate a photovoltaic mini-module made of silicon nanowire solar cells, each of 0.5 mm area, which delivers a power of 260 μW and an open circuit voltage of 2 V at one sun illumination. Using nanowire platforms two sensing applications are presented. Combining functionalised suspended Si nanowires with a novel microfluidic fluid delivery system, fully integrated microfluidic-sensor devices are examined as sensors for streptavidin and pH, whereas, using a microchip modified with Pd nanowires provides a power efficient and fast early hydrogen gas detection method. Finally, an ultra-low power, efficient solar energy harvesting and sensing microsystem augmented with a 6 mAh rechargeable battery allows for less than 20 μW power consumption and 425 h sensor operation even without energy harvesting. [ABSTRACT FROM AUTHOR]

This study demonstrates an innovative approach to clean a polycrystalline seed layer surface for solid phase epitaxy of amorphous silicon (a-Si). The excimer laser cleaning (ELC) makes use of in situ excimer laser irradiation during the first stages of a-Si deposition leading to melting of the as deposited a-Si and parts of the seed layer. The increased diffusion in liquid silicon allows for 'smearing out' of surface contamination species. After liquid phase epitaxy is finished, further a-Si is deposited and crystallized by solid phase epitaxy. Thanks to the 'smearing out,' the interface between the crystalline and amorphous silicon exhibits less contamination locally. SIMS measurements demonstrate a reduced carbon concentration at the seed layer surface after ELC. Numerical simulations, taking into account heat transfer and temperature dependent diffusion, support the reduction of carbon concentration. The simulations agree very well with experimental results. To get optimal solid phase growth conditions, the a-Si deposition temperature has to be below 200 °C. Above 200 °C deposition temperature, defective growth occurs resulting in poor crystallinity or even in nonepitaxial growth. [ABSTRACT FROM AUTHOR]

We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5 µm thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiOx and Al2O3 terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al2O3/PEDOT:PSS solar cell increase from 20.6 to 25.4 mA/cm² and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiOx/PEDOT:PSS cell. Al2O3 lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604 mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber. [ABSTRACT FROM AUTHOR]

Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c‐Si) wafers for solar cells. Due to substrate limitation, a low‐temperature technology is needed for solar cell fabrication. While silicon heterojunction is typically used, herein, the combination of vanadium oxide/c‐Si heterojunction as emitter and base contacts defined by IR laser processing of phosphorus‐doped amorphous silicon carbide stacks is explored. LPC solar cells are fabricated using such technologies to identify their issues and advantages with a promising performance of an active‐area efficiency of 5.6%. Apart from the absence of light‐trapping techniques, the relatively low efficiency obtained is attributed to a low lifetime in the LPC silicon bulk. These poor material properties imply a short diffusion length that makes it that only photogenerated carriers in the emitter regions can be collected. Consequently, future devices should show narrower base contact regions, suggesting a shorter‐wavelength laser, combined with longer LPC substrate lifetimes. [ABSTRACT FROM AUTHOR]