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Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the layered 2D materials, Ta2NiS5 exhibits high anisotropic mobility, exotic electrical response, and intriguing optical properties. Due to the low-symmetrical crystal structures, it possesses in-plane anisotropic physical properties. The optical absorption information of Ta2NiS5 is investigated by anisotropic linear absorption spectra, femtosecond laser intensity scanning (I-scan), and non-degenerate pump-probe technology. The I-scan results show a distinct maximum of ∼4.9 % saturable absorption (SA) and ∼4 % reverse saturable absorption (RSA) at different polarization directions of the incident laser. And, these unique nonlinear optical (NLO) properties originate from the anisotropic optical transition probability. Furthermore, the novel Ta2NiS5-based all-optical logic gates are proposed by manipulating the NLO absorption processes. And, the all-optical OR and NOR logic gates possess an ultrafast response speed approaching 1.7 THz. Meanwhile, an all-optical information transmission method with higher security and accuracy is achieved, which has promising potential to avoid the disclosure of information. This work provides a new path for designing versatile and novel optical applications based on Ta2NiS5 materials.

Due to the extraordinary chemical and physical properties, ternary chalcogenides with wide‐range bandgap, unique structures, and exceptional photoelectric properties have attracted great interest recently. Among them, Chromium thiophosphate (CrPS4) is a promising semiconductor with excellent optical, mechanical, and electronic properties and has a lower lattice symmetry resulting in significant in‐plane anisotropy. Here, the polarization‐dependent nonlinear optical (NLO) responses of CrPS4 flake are investigated. Based on polarization‐resolved Raman spectroscopy, which identifies the crystal axis of sample, the anisotropic linear absorption spectra, I‐scan technique, and pump‐probe measurements are utilized to investigate the optical absorption information of CrPS4. The polarization‐dependent NLO responses are found originating from the anisotropic optical transition probability. And the polar optical phonons play an important role in carrier relaxation processes. Furthermore, CrPS4‐based all‐optical switches are proposed, which can modulate the transmittance of signal light (CW laser) by changing the polarization of switch light (fs laser). This work provides insights into polarization‐dependent CrPS4‐based devices, which is important to promote the potential applications in optical modulator, versatile optoelectronic detection, and so on. [ABSTRACT FROM AUTHOR]

Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the layered 2D materials, Ta2NiS5 exhibits high anisotropic mobility, exotic electrical response, and intriguing optical properties. Due to the low-symmetrical crystal structures, it possesses in-plane anisotropic physical properties. The optical absorption information of Ta2NiS5 is investigated by anisotropic linear absorption spectra, femtosecond laser intensity scanning (I-scan), and non-degenerate pump-probe technology. The I-scan results show a distinct maximum of ∼4.9 % saturable absorption (SA) and ∼4 % reverse saturable absorption (RSA) at different polarization directions of the incident laser. And, these unique nonlinear optical (NLO) properties originate from the anisotropic optical transition probability. Furthermore, the novel Ta2NiS5-based all-optical logic gates are proposed by manipulating the NLO absorption processes. And, the all-optical OR and NOR logic gates possess an ultrafast response speed approaching 1.7 THz. Meanwhile, an all-optical information transmission method with higher security and accuracy is achieved, which has promising potential to avoid the disclosure of information. This work provides a new path for designing versatile and novel optical applications based on Ta2NiS5 materials. [ABSTRACT FROM AUTHOR]

The layer-by-layer buildup of a two-dimensional transition metal dichalcogenide monolayer to form a stack is an important development for these materials, which performs many remarkable properties in the light–matter interaction. Herein, we find clear evidence of exciton–polaritons emerging from WS2/hBN/WS2 heterostructures embedded in a dielectric microcavity under optical pumping. A large Rabi splitting of 15 meV is observed at room temperature, which increases to 25 meV at 5 K. An all-dielectric Fabry–Pérot microcavity provides a simple but effective way to study the room temperature strong coupling between cavity photons and excitons. Our results pave the way for room-temperature polaritonic devices based on quantum-well van der Waals heterostructures. [ABSTRACT FROM AUTHOR]

Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe 2 /MoSe 2 heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence ( μ -PL). The PL peaks redshifts of IEXs and IAXs in WSe 2 /MoSe 2 HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe 2 plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials., (© 2024 IOP Publishing Ltd.)