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Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices., Comment: 38 pages, 17 figures

The structure and properties of water or ice are of great interest to researchers due to their importance in the biological, cryopreservation and environmental fields. Hexagonal ice (Ih) is a common ice phase in nature and has been extensively studied; however, microstructural investigations at the atomic or molecular scale are still lacking. In this paper, the fine structure of quasi-2-dimensional ice Ih films was directly examined using cryogenic transmission electron microscopy. Two types of thin Ih films were observed: perfect single crystals growing along the [0001] direction and crystals with stacking faults, including both basal (BSF) and prismatic (PSF) ones, along the orientation of [11-20]; these results were further confirmed by theoretical calculations. Importantly, for the first time, the stacking faults in ice Ih were directly visualized and resolved. In light of the extension behavior of the chair conformation composed of the water molecules, we elucidated the formation mechanism of BSF in Ih, namely, the Ic phase. This study not only determined the structural characteristics of ice structure at the molecular scale but also provided important concepts for researchers to more fully understand the growth kinetics of ice crystals at the atomic scale.

Freckles, one of the common defects in blades used in heavy duty gas turbines, hugely deteriorates blades mechanical properties and liability under service conditions. Thermal-solutal convection theory is a widely adopted formation mechanism but few solid experimental evidences were reported. Here for the first time we systematically studied the microstructure of 117 grains in freckle chains from four different Nickel-based superalloys of either single crystal or directionally solidified alloys. The relationship between the internal stress and the misorientation throughout the freckle chains is studied by means of state-of-the-art electron microscopy. All results give new experimental proof to the theory of thermal-solutal convection, which is further supported by the fact that borides at the boundary are randomly orientated to alloys. Our results enrich the methodology of freckle study, providing a new sight of the formation mechanism of casting defects.

The topological Hall effect (THE) is critical to the exploration of the spin chirality generated by the real-space Berry curvature, which has attracted worldwide attention for its prospective applications in spintronic devices. However, the prominent THE remains elusive at room temperature, which severely restricts the practical integration of chiral spin textures. Here, we show a colossal intrinsic THE in large-area ferromagnet Cr5Te6 thin films epitaxially grown by pulsed laser deposition. Such a THE can be maintained until 270 K, which is attributed to the field-stimulated noncoplanar spin textures induced by the interaction of the in-plane ferromagnet and antiferromagnet infrastructures. Our first-principles calculations further verify the considerable Dzyaloshinskii-Moriya interaction in Cr5Te6. This work not only paves the way for robust chiral spin textures near room temperature in large-area low-dimensional ferromagnetic films for practical applications, but also facilitates the development of high-density and dissipationless spintronic devices., Comment: 18 pages, 13 figures, 1 table

The interplay between dimensionality and topology manifests in magnetism via both exotic texture morphology and novel dynamics. A free magnetic skyrmion exhibits the skyrmion Hall effect under electric currents. Once it is confined in one-dimensional (1D) channels, the skyrmion Hall effect would be suppressed, and the current-driven skyrmion speed should be boosted by the non-adiabatic spin transfer torque \b{eta}. Here, we experimentally demonstrate that stripes of a spatially modulated spin helix serve as natural 1D channels to restrict skyrmion. Using FeGe as a benchmark, an interstitial skyrmion is created by geometry notch and further moves steadily without the skyrmion Hall effect. The slope of the current-velocity curve for 1D skyrmion is enhanced almost by an order of magnitude owing to a large \b{eta} in FeGe. This feature is also observed in other topological defects. Utilizing the 1D skyrmion dynamics would be a highly promising route to implement topological spintronic devices.

Unconventional quantum states, most notably the two-dimensional (2D) superconductivity, have been realized at the interfaces of oxide heterostructures where they can be effectively tuned by the gate voltage ($V_G$). Here we report that the interface between high-quality EuO (111) thin film and KTaO3 (KTO) (110) substrate shows superconductivity with onset transition temperature $T_c^{onset}$ = 1.35 K. The 2D nature of superconductivity is verified by the large anisotropy of the upper critical field and the characteristics of a Berezinskii-Kosterlitz-Thouless transition. By applying $V_G$, $T_c^{onset}$ can be tuned from ~ 1 to 1.7 K; such an enhancement can be possibly associated with a boosted spin-orbit energy ${\epsilon}_{so}$ = $\hbar$ / ${\tau}_{so}$, where ${\tau}_{so}$ is the spin-orbit relaxation time. Further analysis of ${\tau}_{so}$ based on the upper critical field ($H_{c2}$) and magnetoconductance reveals complex nature of spin-orbit coupling (SOC) at the EuO/KTO(110) interface with different mechanisms dominate the influence of SOC effects for the superconductivity and the magnetotransport in the normal state. Our results demonstrate that the SOC should be considered as an important factor determining the 2D superconductivity at oxide interfaces., Comment: 19 pages, 5 figures

Sample thickness is an important parameter in transmission electron microscopy (TEM) imaging, for interpreting image contrast and understanding the relationship between properties and microstructure. In this study, we introduce a method for determining thickness in scanning transmission electron microscopy (STEM) mode based on scanning moir\'e fringe (SMF). Sample thickness can be determined in situ in the medium magnification using focal-series SMF imaging, with beam damage and contamination avoided to a large extent. This method provides a fast and convenient way for determining thickness in TEM imaging, which is particularly useful for beam-sensitive materials such as Metal-Organic Frameworks., Comment: 11 pages, 4 figures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

Writing, erasing and computing are three fundamental operations required by any working electronic devices. Magnetic skyrmions could be basic bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size and high mobility. However, creating, deleting and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is highly desirable. Here, by engineering chiral magnet Co$_8$Zn$_{10}$Mn$_2$ into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low a current density about $10^{10}$ A/m$^2$ at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices., Comment: 16 pages

Whilst electron correlations were previously recognized to trigger beyond conventional direct current (DC) electronic transportations (e.g. metal-to-insulator transitions, bad metal, thermistors), their respective influences to the alternation current (AC) transport are largely overlooked. Herein, we demonstrate active regulations in the electronic functionalities of d-band correlated rare-earth nickelate (ReNiO3) thin films, by simply utilizing their electronic responses to AC-frequencies (fAC). Assisted by temperature dependent near edge X-ray absorption fine structure analysis, we discovered positive temperature dependences in Coulomb viscosity of ReNiO3 that moderates their AC impedance. Distinguished crosslinking among R(Real)-fAC measured in nearby temperatures is observed that differs to conventional oxides. It enables active adjustability in correlated transports of ReNiO3, among NTCR-, TDelta- and PTCR- thermistors, via fAC from the electronic perspective without varying materials or device structures. The TDelta-fAC relationship can be further widely adjusted via Re composition and interfacial strains. The AC-frequency sensitivity discovered in ReNiO3 brings in a new freedom to regulating and switching the device working states beyond the present semiconductor technologies. It opens a new paradigm for enriching novel electronic applications catering automatic transmission or artificial intelligence in sensing temperatures and frequencies.

Anisotropies in electronic transportations conventionally originate from the nature of low symmetries in crystal structures, and were not anticipated for perovskite oxides, the crystal asymmetricity of which is far below, e.g. van der Waals or topological crystal. Beyond conventional expectations, herein we demonstrate pronounced anisotropies in the inter-band coulomb repulsion dominated electronic transportation behaviors under low-dimensional confinement for the perovskite family of rare-earth nickelates (ReNiO3). From one aspect, imparting bi-axial interfacial strains upon various lattice planes results in extrinsic anisotropies in the abrupt orbital transitions of ReNiO3, and their metal to insulator transition behaviors that elevates the transition temperature beyond the existing merit. From the other aspect, the in-plane orbital entropy associated to the in-plane symmetry of the NiO6 octahedron within ReNiO3 causes intrinsic anisotropies for the gradually orbital transition with temperature to further improve their thermistor transportation properties. The present work unveils the overlooked role of the electronic orbital directionality within low dimensional correlated perovskites that can trigger anisotropic transportation behaviors, in spite of their relatively symmetric crystal structures. Establishing anisotropic transportations integrating the electron correlation and quantum confinement effects will bring in a new freedom for achieving further improvement in transportation properties of multi-functional perovskite oxides.

The metal to insulator transition (MIT) in Mott-Hubbard systems is one of the most important discoveries in condensed matter physics, and results in abrupt orbital transitions from the insulating to metallic phases by elevating temperature across a critical point (TMIT). Although the MIT was previously expected to be mainly driven by the orbital Coulomb repulsion energy, the entropy contribution to the orbital free energy that also determines the relative stability of the metallic and insulating phases was largely overlooked. Herein, we demonstrate an orbital-entropy dominated reversible electronic phase transition in the metastable perovskite family of correlated rare-earth nicklates (ReNiO3), in addition to their previously known MIT driven by orbital Coulomb energies. In reverse to MIT, the resistivity of ReNiO3 abruptly increases by 2-3 orders by elevating T across another critical point (TR-MIT) below TMIT, and such transition is named as reverse-metal to insulator transition (R-MIT). Combining the afterwards exponentially decreasing resistivity in the insulating phase of ReNiO3 at further temperature elevation, a distinguished delta-temperatural transport character is established, which is potentially applicable for locking the working temperatures range for electric devices. The TR-MIT is shown to be enhanced via reducing the compositional complexity and size of Re or imparting bi-axial compressive strains, and meanwhile the transition sharpness of delta-temperatural transport is reduced. Our discovery indicates that temperature range for a thermodynamically stable insulating phase of ReNiO3 is in between of TR-MIT and TMIT, while a new conductive phase with high orbital entropy is formed by further descending temperature below TR-MIT.

Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of ~0.9 at 323 K and ~1.6 at 723 K, making the average ZT much higher for better performance. The large improvement at room temperature is significant considering that such a ZT value is comparable to the best ZT at this temperature in n-type Bi2Te3. The enhancement was mainly from the improved electrical mobility and multi-scale phonon scattering, particularly from the well-dispersed bismuth nano-precipitates in the porous structure. We further extend this approach to other thermoelectric materials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb and Hf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements, further advancing thermoelectric materials for applications.