21 results on '"Gelczuk, Ł."'
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2. Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS
3. Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
4. Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy.
5. Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures
6. Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE
7. Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
8. Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy.
9. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing.
10. Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE
11. DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing
12. Correlation between barrier inhomogeneities of 4H-SiC 1A/600V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS
13. Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE
14. High resolution transient analysis for “localized” states at the extended defects in InGaAs/GaAs heterostructures grown by MOVPE
15. Dislocation‐related electronic states in partially strain‐relaxed InGaAs/GaAs heterostructures grown by MOVPE
16. Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures.
17. Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE.
18. Distinguishing and identifying point and extended defects in DLTS measurements.
19. Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE
20. Anisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures
21. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties.
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