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This study conducted laser-induced terahertz emission spectroscopy on a VO2/Si heterojunction. Consequently, rapid estimation of the local interface potential was realized and the work function of VO2 was obtained as 5.17–5.25 eV with increasing temperature from 320 to 380 K. Moreover, an obvious terahertz emission variation was observed across the metal–insulator phase transition of VO2, and the doping conditions of the Si substrate largely influenced the terahertz emission. These results imply a strong relationship between the terahertz emission amplitude and the interface electric field, which supports the rapid performance of terahertz emission spectroscopy in estimating the work function of VO2. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) thin films exhibit a metalâ€"insulator transition (MIT) with sensitivity to the lattice strain. Substrates with step and terrace structures are an attractive platform for growing high-quality thin films. Thus, a prominent lattice strain effect could be derived using VO2 thin films on these substrates. In this study, VO2/TiO2 microwires were fabricated following the thin film growth to investigate the microwire-direction dependence of the MIT property. The in-plane crystal orientation dependence of the MIT property was enhanced for VO2/TiO2 microwires with step and terrace structures, which is promising for strain engineering in device applications. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) thin films grown on hexagonal boron nitride (hBN) flakes show three orders of magnitude resistance change due to metal–insulator transition (MIT). The MIT property of VO2 thin films is strongly dependent on the metallic domain size, which should be identified to derive the resistance change owing to the single metallic domain. In this study, we investigated the relationship between the metallic domain size and the device-size-dependent MIT property of VO2 thin films grown on hBN. We observed by temperature-dependent Raman spectroscopy and optical microscopy the emergence of the metallic domains and determined the metallic domain size in VO2 thin films grown on hBN. The metallic domain size of the VO2 thin films grown on hBN was determined to be ∼500 nm on average in length and up to sub-micrometer scale. Electric transport measurements revealed that VO2/hBN microwires exhibit multi-level step-like resistivity changes that change by one to two orders when the length and width are ∼2 μm owing to the confined metallic domains in the micrometer scale. Our results open a way for VO2 devices, showing a steep and large resistance change even in the micrometer scale. [ABSTRACT FROM AUTHOR]