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3 results on '"Generic photonic integration"'

1. Foundry Photonic Process Extension With Bandgap Tuning Using Selective Area Growth.

Author

Lemaitre, Florian, Fortin, Catherine, Lagay, Nadine, Binet, Guillaume, Pustakhod, Dzmitry, Decobert, Jean, Ambrosius, Huub, and Williams, Kevin

Abstract

The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active–passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers. [ABSTRACT FROM AUTHOR]

Published
2019
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2. Foundry photonic process extension with bandgap tuning using selective area growth

Author

Catherine Fortin, Dzmitry Pustakhod, Huub Ambrosius, N. Lagay, Florian Lemaitre, Guillaume Binet, Kevin A. Williams, Jean Decobert, and Photonic Integration

Subjects
Generic photonic integration, business.industry, Computer science, Amplifier, Photonic integrated circuit, Topology (electrical circuits), photonic integrated circuits, selective area growth, Atomic and Molecular Physics, and Optics, chemistry.chemical_compound, chemistry, butt-joint integration, multi-project wafer run, Indium phosphide, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Wafer, Electrical and Electronic Engineering, Photonics, business, Photonic crystal, Block (data storage)
Abstract

The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.

Published
2019

3. Selective area growth in generic integration for extended range tunable laser source

Author

N. Lagay, Huub Ambrosius, C. Fortin, Florian Lemaitre, Sylwester Latkowski, Kevin A. Williams, Rastko Pajković, Jean Decobert, E. Smalbrugge, Photonic Integration, and NanoLab@TU/e

Subjects
010302 applied physics, Range (particle radiation), Generic photonic integration, Materials science, business.industry, Band gap, Integration platform, 02 engineering and technology, 021001 nanoscience & nanotechnology, Chip, Laser, 01 natural sciences, Tunable laser, law.invention, Selective area growth, Wavelength, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business
Abstract

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

Published
2018

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